现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3569
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 0.54 (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 10
Drain current Pulse (t = 1 ms) A
IDP 40
(Note 1)
1: Gate
Drain power dissipation (Tc = 25°C) PD 45 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 363 mJ
(Note 2)
Avalanche current IAR 10 A
JEDEC ―
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
JEITA SC-67
Channel temperature Tch 150 °C
TOSHIBA 2-10U1B
Storage temperature range Tstg -55~150 °C
Weight : 1.7 g (typ.)

Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω 1

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

1 2004-03-04
 2SK3569
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V   ±10 µA

Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30   V
Drain cut-off current IDSS VDS = 600 V, VGS = 0 V   100 µA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600   V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0  4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A  0.54 0.75 Ω
Forward transfer admittance Yfs VDS = 10 V, ID = 5 A 0.7 8.5  S
Input capacitance Ciss  1500 
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz  15  pF

Output capacitance Coss  180 

10 V ID = 5 A VOUT
Rise time tr VGS  22 
0V
Turn-on time ton RL =  50 
50 Ω
Switching time 40 Ω ns
Fall time tf  36 
VDD ∼
− 200 V

Turn-off time toff Duty <

= 1%, tw = 10 µs  180 

Total gate charge Qg  42 

Gate-source charge Qgs VDD ∼
− 400 V, VGS = 10 V, ID = 10 A  23  nC

Gate-drain charge Qgd  19 

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR    10 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP    40 A
Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V   −1.7 V
Reverse recovery time trr IDR = 10 A, VGS = 0 V,  1300  ns
Reverse recovery charge Qrr dIDR/dt = 100 A/µs  16  µC

Marking

K3569 TYPE Lot Number

2 2004-03-04
 2SK3569

ID – VDS ID – VDS
10 20
COMMON SOURCE 6 5.3 8 COMMON SOURCE
10
Tc = 25°C Tc = 25°C
5.1 6
PULSE TEST PULSE TEST

(A)
(A)

8 16
10,8 5
5.5

ID
ID

4.8 5.25
6 12

DRAIN CURRENT
DRAIN CURRENT

5
4.6

4 8
4.75
4.4

4.2 4.5
2 4
VGS = 4 V
VGS = 4V
0 0
0 2 4 6 8 10 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

20 10
(V)

COMMON SOURCE
COMMON SOURCE
Tc = 25
VDS

VDS = 20 V
(A)

16 8 PULSE TEST
PULSE TEST
ID

DRAIN-SOURCE VOLTAGE

12 6
DRAIN CURRENT

ID = 10 A

8 4

Tc = −55°C
100 5
4 2

25 2.5

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs – ID RDS (ON) – ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = 25°C
PULSE TEST

Tc = −55°C
10
RDS (ON) (Ω)

25
Yfs (S)

100
1
VGS = 10 V 15V

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

3 2004-03-04
 2SK3569

RDS (ON) – Tc IDR – VDS

2.5 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

IDR
PULSE TEST Tc = 25°C
2.0 PULSE TEST

DRAIN REVERSE CURRENT

ID = 12A
10
RDS (ON) ( Ω)

1.5

(A)
6

1.0 3

VGS = 10 V 1
10
0.5
5
3
1 VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

1000
C

Coss 3
CAPACITANCE

Vth (V)

100

2
Crss
COMMON SOURCE
10 COMMON SOURCE VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25°C PULSE TEST
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
80 500 20
(V)

(V)
DRAIN POWER DISSIPATION

VDS

VGS

400 16
60 VDS
VDD = 100 V
DRAIN-SOURCE VOLTAGE

GATE-SOURCE VOLTAGE

300 12
PD (W)

200
40

200 400 8

COMMON SOURCE
20 VGS
100 ID = 3 A 4
Tc = 25°C
PULSE TEST
0 0 0
0 40 80 120 160 200 0 10 20 30 40 50 60

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

4 2004-03-04
 2SK3569

rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10 100 1 10 100 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 500
ID max (PULSED) *

100 µs * 400
AVALANCHE ENERGY

ID max (CONTINUOUS) *
(A)

10
EAS (mJ)

300
1 ms *
ID
DRAIN CURRENT

DC OPERATION 200
Tc = 25°C
1

100

0
0.1 25 50 75 100 125 150
SINGLE NONREPETITIVE PULSE
Tc=25 CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED Tch (°C)
LINEARLY WITH INCREASE IN
VDSS max
TEMPERATURE.
0.01 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) −15 V IAR

VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1  B VDSS 
Ε AS = ⋅ L ⋅ I2 ⋅  
VDD = 90 V, L = 6.36mH 2 B − V 
 VDSS DD 

5 2004-03-04
 2SK3569

RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

6 2004-03-04