TPS2553-Q1

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PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

Check for Samples: TPS2553-Q1

1FEATURES • Fast Overcurrent Response - 2-μs (typ)

•
2 Qualified for Automotive Applications • 85-mΩ High-Side MOSFET (DBV Package)
• AEC-Q100 Qualified With the Following • Reverse Input-Output Voltage Protection
Results: • Operating Range: 2.5 V to 6.5 V
– Device Temperature Grade 1: –40°C to • Built-in Soft-Start
125°C Ambient Operating Temperature • 15 kV ESD Protection per IEC 61000-4-2 (with
Range External Capacitance)
– Device HBM ESD Classification Level H2 • UL Listed – File No. E169910 and NEMKO
– Device CDM ESD Classification Level C3B IEC60950-1-am1 ed2.0
• Up to 1.5 A Maximum Load Current • See the TI Switch Portfolio
• ±6% Current-Limit Accuracy at 1.7 A (typ)
• Meets USB Current-Limiting Requirements APPLICATIONS
• Backwards Compatible with TPS2550/51 • Automotive
• Adjustable current-limit, 75 mA–1300 mA (typ) • Power Distribution
• Constant-Current (TPS2553-Q1) • Current Limiting

DESCRIPTION
The TPS2553-Q1 power-distribution switches are intended for applications where precision current-limiting is
required or heavy capacitive loads and short circuits are encountered and provide up to 1.5 A of continuous load
current. These devices offer a programmable current-limit threshold between 75 mA and 1.7 A (typ) via an
external resistor. Current-limit accuracy as tight as ±6% can be achieved at the higher current-limit settings. The
power-switch rise and fall times are controlled to minimize current surges during turn on/off.
TPS2553-Q1 devices limit the output current to a safe level by using a constant-current mode when the output
load exceeds the current-limit threshold. An internal reverse- voltage comparator disables the power- switch
when the output voltage is driven higher than the input to protect devices on the input side of the switch. The
FAULT output asserts low during overcurrent and reverse-voltage conditions.
TPS2553-Q1 TPS2553-Q1 TPS2553-Q1
DRV PACKAGE DBV PACKAGE 5V USB 0.1 mF USB Data USB
(TOP VIEW) (TOP VIEW) Input IN OUT Port
RFAULT
OUT 1 6 IN IN 1 6 OUT 100 kW
ILIM 2 PAD 5 GND GND 2 5 ILIM 120 mF
FAULT 3 4 EN EN 3 4 FAULT ILIM RILIM
Fault Signal FAULT
20 kW USB requirement only*
Control Signal EN GND
EN = Active Low for the TPS2553-Q1 *USB requirement that downstream
EN = Active High for the TPS2553-Q1 Power Pad facing ports are bypassed with at least
Add -1 to part number for lach-off version 120 mF per hub

Figure 1. Typical Application as USB Power Switch

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS2553-Q1

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION (1)

RECOMMENDED
(2) MAXIMUM CURRENT-LIMIT
TA ENABLE ORDERABLE PART NUMBER TOP-SIDE MARKING
CONTINUOUS LOAD PROTECTION
CURRENT (2)
TPS2553QDRVRQ1 Preview
–40°C to 125°C Active high 1.5 A Constant-Current
TPS2553QDBVRQ1 PYEQ

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) Maximum ambient temperature is a function of device junction temperature and system level considerations, such as load current,
power dissipation and board layout. See dissipation rating table and recommended operating conditions for specific information related
to these devices.

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ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted (1) (2)

VALUE UNIT
Voltage range on IN, OUT, EN or EN, ILIM, FAULT –0.3 to 7 V
Voltage range from IN to OUT –7 to 7 V
IO Continuous output current Internally Limited
Continuous FAULT sink current 25 mA
ILIM source current 1 mA
Human Body Model Classification Level H2 2 kV
ESD
Charged Device Model ESD Classification Level C3B 750 V
Ratings
IEC system level (contact/air) (3) 8 / 15 kV
TJ Maximum junction temperature –40 to 150 °C
Tstg Storage temperature –65 to 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.
(3) Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.

THERMAL INFORMATION
TPS2553-Q1 TPS2553-Q1
THERMAL METRIC (1) UNIT
DBV (6 PINS) DRV (6 PINS)
θJA Junction-to-ambient thermal resistance 182.6 72
θJCtop Junction-to-case (top) thermal resistance 122.2 85.3
θJB Junction-to-board thermal resistance 29.4 41.3
°C/W
ψJT Junction-to-top characterization parameter 20.8 1.7
ψJB Junction-to-board characterization parameter 28.9 41.7
θJCbot Junction-to-case (bottom) thermal resistance n/a 11.1

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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RECOMMENDED OPERATING CONDITIONS

MIN MAX UNIT
VIN Input voltage, IN 2.5 6.5 V
VEN Enable voltage 0 6.5 V
VIH High-level input voltage on EN or EN 1.1
V
VIL Low-level input voltage on EN or EN 0.66
–40 °C ≤ TJ ≤ 125 °C 0 1.2
IOUT Continuous output current, OUT A
–40 °C ≤ TJ ≤ 105 °C 0 1.5
RILIM Current-limit threshold resistor range (nominal 1%) from ILIM to GND 15 232 kΩ
IO Continuous FAULT sink current 0 10 mA
Input de-coupling capacitance, IN to GND 0.1 μF
Operating virtual junction IOUT ≤ 1.2 A –40 125
TJ °C
temperature (1) IOUT ≤ 1.5 A -40 105

(1) See "Dissipation Rating Table" and "Power Dissipation and Junction Temperature" sections for details on how to calculate maximum
junction temperature for specific applications and packages.

ELECTRICAL CHARACTERISTICS
over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT
POWER SWITCH
DBV package, TA = 25°C 85 95
DBV package, –40°C ≤TA ≤125°C 135
rDS(on) Static drain-source on-state resistance DRV package, TA = 25°C 100 115 mΩ
DRV package, –40°C ≤TA ≤105°C 140
DRV package, –40°C ≤TA ≤125°C 150
VIN = 6.5 V 1.1 1.5
tr Rise time, output
VIN = 2.5 V CL = 1 μF, RL = 100 Ω, 0.7 1
ms
VIN = 6.5 V (see Figure 2) 0.2 0.5
tf Fall time, output
VIN = 2.5 V 0.2 0.5
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold 0.66 1.1 V
IEN Input current VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V –0.5 0.5 μA
ton Turnon time 3 ms
CL = 1 μF, RL = 100 Ω, (see Figure 2)
toff Turnoff time 3 ms
CURRENT-LIMIT
RILIM = 15 kΩ –40°C ≤TA ≤105°C 1610 1700 1800
TA = 25°C 1215 1295 1375
RILIM = 20 kΩ
–40°C ≤TA ≤125°C 1200 1295 1375
Current-limit threshold (Maximum DC output current IOUT delivered to
IOS TA = 25°C 490 520 550 mA
load) and Short-circuit current, OUT connected to GND RILIM = 49.9 kΩ
–40°C ≤TA ≤125°C 475 520 565
RILIM = 210 kΩ 100 130 150
ILIM shorted to IN 50 75 100
tIOS Response time to short circuit VIN = 5 V (see Figure 3) 2 μs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
95 135 190 mV
(VOUT – VIN)
Time from reverse-voltage condition to
VIN = 5 V 3 5 7 ms
MOSFET turn off

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.

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ELECTRICAL CHARACTERISTICS (continued)

over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT
SUPPLY CURRENT
IIN_off Supply current, low-level output VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V 0.1 1 μA
RILIM = 20 kΩ 120 140 μA
IIN_on Supply current, high-level output VIN = 6.5 V, No load on OUT
RILIM = 210 kΩ 100 120 μA
IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V TA = 25 °C 0.01 1 μA
UNDERVOLTAGE LOCKOUT
UVLO Low-level input voltage, IN VIN rising 2.35 2.45 V
Hysteresis, IN TA = 25 °C 25 mV
FAULT FLAG
VOL Output low voltage, FAULT I/FAULT = 1 mA 180 mV
Off-state leakage V/FAULT = 6.5 V 1 μA
FAULT assertion or de-assertion due to overcurrent condition 5 8 11 ms
FAULT deglitch
FAULT assertion or de-assertion due to reverse-voltage condition 2 4 6 ms
THERMAL SHUTDOWN
Thermal shutdown threshold 155 °C
Thermal shutdown threshold in
135 °C
current-limit
Hysteresis 10 °C

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DEVICE INFORMATION

Pin Functions
PIN
TPS2553-Q1DBV TPS2553-Q1DRV I/O DESCRIPTION
NAME
NO. NO.
EN – – I Enable input, logic low turns on power switch
EN 3 4 I Enable input, logic high turns on power switch
GND 2 5 Ground connection; connect externally to PowerPAD
Input voltage; connect a 0.1 μF or greater ceramic capacitor from
IN 1 6 I
IN to GND as close to the IC as possible.
Active-low open-drain output, asserted during overcurrent,
FAULT 4 3 O
overtemperature, or reverse-voltage conditions.
OUT 6 1 O Power-switch output
External resistor used to set current-limit threshold;
ILIM 5 2 O
recommended 15 kΩ ≤ RILIM ≤ 232 kΩ.
Internally connected to GND; used to heat-sink the part to the
PowerPAD™ – PAD
circuit board traces. Connect PowerPAD to GND pin externally.

Add -1 for Latch-Off version

FUNCTIONAL BLOCK DIAGRAM

-
Reverse
Voltage
+ Comparator

IN CS OUT
Deglitch

Current
4-ms

Sense

Charge
Pump

Current
EN Driver
Limit

(Note A) FAULT
UVLO
GND
Thermal
Sense 8-ms Deglitch

ILIM
Note A: TPS255x parts enter constant current mode
during current limit condition; TPS255x-1 parts latch off

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PARAMETER MEASUREMENT INFORMATION

OUT
tr tf
RL CL
VOUT 90% 90%
10% 10%

TEST CIRCUIT

VEN 50% 50% VEN 50% 50%

toff
ton toff ton toff
90% 90%
VOUT VOUT
10% 10%

VOLTAGE WAVEFORMS

Figure 2. Test Circuit and Voltage Waveforms

IOS

IOUT

tIOS

Figure 3. Response Time to Short Circuit Waveform

Decreasing
Load Resistance

VOUT

Decreasing
Load Resistance

IOUT

IOS

Figure 4. Output Voltage vs. Current-Limit Threshold

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TYPICAL CHARACTERISTICS
TPS2553-Q1
VIN 10 mF
VOUT
IN OUT
RFAULT
10 kW
150 mF
ILIM
Fault Signal FAULT RILIM
Control Signal EN GND

Power Pad

Figure 5. Typical Characteristics Reference Schematic

Figure 6. Turnon Delay and Rise Time Figure 7. Turnoff Delay and Fall Time

Figure 8. Device Enabled into Short-Circuit Figure 9. Full-Load to Short-Circuit Transient Response

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TYPICAL CHARACTERISTICS (continued)

Figure 10. Short-Circuit to Full-Load Recovery Response Figure 11. No-Load to Short-Circuit Transient Response

Figure 12. Short-Circuit to No-Load Recovery Response Figure 13. No Load to 1Ω Transient Response

Figure 14. 1Ω to No Load Transient Response Figure 15. Reverse-Voltage Protection Response

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TYPICAL CHARACTERISTICS (continued)

2.40

2.39 RILIM = 20 kW

2.38

UVLO - Undervoltage Lockout - V

2.37

2.36 UVLO Rising

2.35

2.34
UVLO Falling
2.33

2.32

2.31

2.30
-50 0 50 100 150
TJ - Junction Temperature - °C

Figure 16. Reverse-Voltage Protection Recovery Figure 17. UVLO – Undervoltage Lockout – V

0.40 150
RILIM = 20 kW
RILIM = 20 kW VIN = 6.5 V
0.36 135 VIN = 5 V
IIN - Supply Current, Output Disabled - mA

IIN - Supply Current, Output Enabled - mA

0.32 120

0.28 105

0.24 90

0.20 VIN = 6.5 V 75 VIN = 3.3 V

VIN = 2.5 V
0.16 60

0.12 45

0.08 30
VIN = 2.5 V
0.04 15

0 0
-50 0 50 100 150 -50 0 50 100 150
TJ - Junction Temperature - °C TJ - Junction Temperature - °C

Figure 18. IIN – Supply Current, Output Disabled – μA Figure 19. IIN – Supply Current, Output Enabled – μA

20 150
rDS(on) - Static Drain-Source On-State Resistance - mW

VIN = 5 V,
18
RILIM = 20 kW,
125 DRV Package
16 TA = 25°C
Current Limit Response - ms

14
100

12
DBV Package

10 75

8
50
6

4
25

0 0
0 1.5 3 4.5 6 -50 0 50 100 150
Peak Current - A TJ - Junction Temperature - °C

Figure 20. current-limit Response – μs Figure 21. MOSFET rDS(on) Vs. Junction Temperature

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TYPICAL CHARACTERISTICS (continued)

1400 150
1300 140

1200 130

IDS - Static Drain-Source Current - mA

IDS - Static Drain-Source Current - mA

TA = -40°C 120
1100
110 TA = -40°C TA = 25°C
1000 TA = 125°C
TA = 25°C 100
900
TA = 125°C 90
800
80
700
70
600
60
500
50
400
40
300
30
200 VIN = 6.5 V, 20 VIN = 6.5 V,
100 RILIM = 20 kW RILIM = 200 kW
10
0 0
0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000
VIN - VOUT - 100 mV/div VIN - VOUT - 100 mV/div

Figure 22. Switch Current Vs. Drain-Source Voltage Across Figure 23. Switch Current Vs. Drain-Source Voltage Across
Switch Switch

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DETAILED DESCRIPTION

OVERVIEW
The TPS2553-Q1 is current-limited. Power-distribution switches using N-channel MOSFETs for applications
where short circuits or heavy capacitive loads will be encountered and provide up to 1.5 A of continuous load
current. These devices allow the user to program the current-limit threshold between 75 mA and 1.7 A (typ) via
an external resistor. Additional device shutdown features include overtemperature protection and reverse-voltage
protection. The device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-
channel MOSFET. The charge pump supplies power to the driver circuit and provides the necessary voltage to
pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.5 V
and requires little supply current. The driver controls the gate voltage of the power switch. The driver
incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage
surges and provides built-in soft-start functionality. The TPS2553-Q1 enters constant-current mode when the
load exceeds the current-limit threshold.

OVERCURRENT CONDITIONS
The TPS2553-Q1 responds to overcurrent conditions by limiting the output current to the IOS levels shown in
Figure 24. When an overcurrent condition is detected, the device maintains a constant output current and
reduces the output voltage accordingly. Two possible overload conditions can occur.
The first condition is when a short circuit or partial short circuit is present when the device is powered-up or
enabled. The output voltage is held near zero potential with respect to ground and the TPS2553-Q1 ramps the
output current to IOS. The TPS2553-Q1 device will limit the current to IOS until the overload condition is removed
or the device begins to thermal cycle. The device will remain off until power is cycled or the device enable is
toggled.
The second condition is when a short circuit, partial short circuit, or transient overload occurs while the device is
enabled and powered on. The device responds to the overcurrent condition within time tIOS (see Figure 3). The
current-sense amplifier is overdriven during this time and momentarily disables the internal current-limit
MOSFET. The current-sense amplifier recovers and limits the output current to IOS. Similar to the previous case,
the TPS2553-Q1 will limit the current to IOS until the overload condition is removed or the device begins to
thermal cycle.
The TPS2553-Q1 thermal cycles if an overload condition is present long enough to activate thermal limiting in
any of the above cases. The device turns off when the junction temperature exceeds 135°C (typ) while in
current-limit. The device remains off until the junction temperature cools 10°C (typ) and then restarts. The
TPS2553-Q1 cycles on/off until the overload is removed (see Figure 10 and Figure 12) .

REVERSE-VOLTAGE PROTECTION
The reverse-voltage protection feature turns off the N-channel MOSFET whenever the output voltage exceeds
the input voltage by 135 mV (typ) for 4-ms (typ).A reverse current of (VOUT – VIN)/rDS(on)) will be present when this
occurs. This prevents damage to devices on the input side of the TPS2553-Q1 by preventing significant current
from sinking into the input capacitance. The TPS2553-Q1 device allows the N-channel MOSFET to turn on once
the output voltage goes below the input voltage for the same 4-ms deglitch time.

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FAULT RESPONSE
The FAULT open-drain output is asserted (active low) during an overcurrent, overtemperature or reverse-voltage
condition. The TPS2553-Q1 asserts the FAULT signal until the fault condition is removed and the device
resumes normal operation. The TPS2553-Q1 is designed to eliminate false FAULT reporting by using an internal
delay "deglitch" circuit for overcurrent (7.5-ms typ) and reverse-voltage (4-ms typ) conditions without the need for
external circuitry. This ensures that FAULT is not accidentally asserted due to normal operation such as starting
into a heavy capacitive load. The deglitch circuitry delays entering and leaving fault conditions. Overtemperature
conditions are not deglitched and assert the FAULT signal immediately.

UNDERVOLTAGE LOCKOUT (UVLO)

The undervoltage lockout (UVLO) circuit disables the power switch until the input voltage reaches the UVLO turn-
on threshold. Built-in hysteresis prevents unwanted on/off cycling due to input voltage drop from large current
surges.

ENABLE (EN OR EN)

The logic enable controls the power switch, bias for the charge pump, driver, and other circuits to reduce the
supply current. The supply current is reduced to less than 1-μA when a logic high is present on EN or when a
logic low is present on EN. A logic low input on EN or a logic high input on EN enables the driver, control circuits,
and power switch. The enable input is compatible with both TTL and CMOS logic levels.

THERMAL SENSE
The TPS2553-Q1 has a self-protection feature using two independent thermal sensing circuits that monitor the
operating temperature of the power switch. It disables the operation if the temperature exceeds recommended
operating conditions. The TPS2553-Q1 device operates in constant-current mode during an overcurrent
condition, which increases the voltage drop across the power-switch. The power dissipation in the package is
proportional to the voltage drop across the power switch, which increases the junction temperature during an
overcurrent condition. The first thermal sensor turns off the power switch when the die temperature exceeds
135°C (min) and the part is in current-limit. Hysteresis is built into the thermal sensor, and the switch turns on
after the device has cooled approximately 10 °C.
The TPS2553-Q1 also has a second ambient thermal sensor. The ambient thermal sensor turns off the power-
switch when the die temperature exceeds 155°C (min) regardless of whether the power switch is in current-limit
and will turn on the power switch after the device has cooled approximately 10 °C. The TPS2553-Q1 continues
to cycle off and on until the fault is removed.
The open-drain fault reporting output FAULT is asserted (active low) immediately during an overtemperature
shutdown condition.

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APPLICATION INFORMATION

INPUT AND OUTPUT CAPACITANCE

Input and output capacitance improves the performance of the device; the actual capacitance should be
optimized for the particular application. For all applications, a 0.1μF or greater ceramic bypass capacitor between
IN and GND is recommended as close to the device as possible for local noise de-coupling. This precaution
reduces ringing on the input due to power-supply transients. Additional input capacitance may be needed on the
input to reduce voltage overshoot from exceeding the absolute maximum voltage of the device during heavy
transient conditions. This is especially important during bench testing when long, inductive cables are used to
connect the evaluation board to the bench power-supply.
Placing a high-value electrolytic capacitor on the output pin is recommended when large transient currents are
expected on the output.

PROGRAMMING THE CURRENT-LIMIT THRESHOLD

The overcurrent threshold is user programmable via an external resistor. The TPS2553-Q1 uses an internal
regulation loop to provide a regulated voltage on the ILIM pin. The current-limit threshold is proportional to the
current sourced out of ILIM. The recommended 1% resistor range for RILIM is 15 kΩ ≤ RILIM ≤ 232 kΩ to ensure
stability of the internal regulation loop. Many applications require that the minimum current-limit is above a certain
current level or that the maximum current-limit is below a certain current level, so it is important to consider the
tolerance of the overcurrent threshold when selecting a value for RILIM. The following equations and Figure 24
can be used to calculate the resulting overcurrent threshold for a given external resistor value (RILIM). Figure 24
includes current-limit tolerance due to variations caused by temperature and process. However, the equations do
not account for tolerance due to external resistor variation, so it is important to account for this tolerance when
selecting RILIM. The traces routing the RILIM resistor to the TPS2553-Q1 should be as short as possible to reduce
parasitic effects on the current-limit accuracy.
RILIM can be selected to provide a current-limit threshold that occurs 1) above a minimum load current or 2)
below a maximum load current.
To design above a minimum current-limit threshold, find the intersection of RILIM and the maximum desired load
current on the IOS(min) curve and choose a value of RILIM below this value. Programming the current-limit above a
minimum threshold is important to ensure start up into full load or heavy capacitive loads. The resulting maximum
current-limit threshold is the intersection of the selected value of RILIM and the IOS(max) curve.
To design below a maximum current-limit threshold, find the intersection of RILIM and the maximum desired load
current on the IOS(max) curve and choose a value of RILIM above this value. Programming the current-limit below a
maximum threshold is important to avoid current-limiting upstream power supplies causing the input voltage bus
to droop. The resulting minimum current-limit threshold is the intersection of the selected value of RILIM and the
IOS(min) curve.

Current-Limit Threshold Equations (IOS):

22980V
IOSmax (mA) =
RILIM0.94kW
23950V
IOSnom (mA) =
RILIM0.977kW
25230V
IOSmin (mA) =
RILIM1.016kW (1)
where 15 kΩ ≤ RILIM ≤ 232 kΩ.

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While the maximum recommended value of RILIM is 232 kΩ, there is one additional configuration that allows for
a lower current-limit threshold. The ILIM pin may be connected directly to IN to provide a 75 mA (typ) current-limit
threshold. Additional low-ESR ceramic capacitance may be necessary from IN to GND in this configuration to
prevent unwanted noise from coupling into the sensitive ILIM circuitry.
1800
1700
1600
1500
1400
Current Limit Threshold - mA

1300
1200
1100
1000
900
IOS(max)
800
700
600
500 IOS(nom)
400
300
200 IOS(min)
100
0
15 25 35 45 55 65 75 85 95 105 115 125 135 145 155 165 175 185 195 205 215 225 235
RILIM - Current Limit Resistor - kW

Figure 24. Current-Limit Threshold vs RILIM

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APPLICATION 1: DESIGNING ABOVE A MINIMUM current-limit

Some applications require that current-limiting cannot occur below a certain threshold. For this example, assume
that 1 A must be delivered to the load so that the minimum desired current-limit threshold is 1000 mA. Use the
IOS equations and Figure 24 to select RILIM.
IOSmin (mA) = 1000mA
25230V
IOSmin (mA) =
RILIM1.016 k W
1
æ 25230V ÷ö1.016
RILIM (k W ) = ççç ÷÷
çè I
OSmin mA ÷ø
RILIM (k W ) = 24k W (2)
Select the closest 1% resistor less than the calculated value: RILIM = 23.7 kΩ. This sets the minimum current-limit
threshold at 1 A . Use the IOS equations, Figure 24, and the previously calculated value for RILIM to calculate the
maximum resulting current-limit threshold.
RILIM (kW) = 23.7kW
22980V
IOSmax (mA) =
RILIM0.94kW
22980V
IOSmax (mA) =
23.70.94kW
IOSmax (mA) = 1172.4mA (3)
The resulting maximum current-limit threshold is 1172.4 mA with a 23.7 kΩ resistor.

APPLICATION 2: DESIGNING BELOW A MAXIMUM current-limit

Some applications require that current-limiting must occur below a certain threshold. For this example, assume
that the desired upper current-limit threshold must be below 500 mA to protect an up-stream power supply. Use
the IOS equations and Figure 24 to select RILIM.
IOSmax (mA) = 500mA
22980V
IOSmax (mA) =
RILIM0.94kW
1
æ 22980V ÷ö0.94
RILIM (kW) = ççç ÷
çèIOSmax mA ÷÷ø
RILIM (kW) = 58.7kW (4)
Select the closest 1% resistor greater than the calculated value: RILIM = 59 kΩ. This sets the maximum current-
limit threshold at 500 mA . Use the IOS equations, Figure 24, and the previously calculated value for RILIM to
calculate the minimum resulting current-limit threshold.
RILIM (kW) = 59kW
25230V
IOSmin (mA) =
RILIM1.016kW
25230V
IOSmin (mA) =
591.016kW
IOSmin (mA) = 400.6mA (5)
The resulting minimum current-limit threshold is 400.6 mA with a 59 kΩ resistor.

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ACCOUNTING FOR RESISTOR TOLERANCE

The previous sections described the selection of RILIM given certain application requirements and the importance
of understanding the current-limit threshold tolerance. The analysis focused only on the TPS2553-Q1
performance and assumed an exact resistor value. However, resistors sold in quantity are not exact and are
bounded by an upper and lower tolerance centered around a nominal resistance. The additional RILIM resistance
tolerance directly affects the current-limit threshold accuracy at a system level. The following table shows a
process that accounts for worst-case resistor tolerance assuming 1% resistor values. Step one follows the
selection process outlined in the application examples above. Step two determines the upper and lower
resistance bounds of the selected resistor. Step three uses the upper and lower resistor bounds in the IOS
equations to calculate the threshold limits. It is important to use tighter tolerance resistors, e.g. 0.5% or 0.1%,
when precision current-limiting is desired.

Table 1. Common RILIM Resistor Selections

Ideal Closest 1% Resistor Tolerance Actual Limits
Desired Nominal
Resistor Resistor IOS MIN IOS Nom IOS MAX
current-limit (mA) 1% low (kΩ) 1% high (kΩ)
(kΩ) (kΩ) (mA) (mA) (mA)
75 SHORT ILIM to IN 50.0 75.0 100.0
120 226.1 226 223.7 228.3 101.3 120.0 142.1
200 134.0 133 131.7 134.3 173.7 201.5 233.9
300 88.5 88.7 87.8 89.6 262.1 299.4 342.3
400 65.9 66.5 65.8 67.2 351.2 396.7 448.7
500 52.5 52.3 51.8 52.8 448.3 501.6 562.4
600 43.5 43.2 42.8 43.6 544.3 604.6 673.1
700 37.2 37.4 37.0 37.8 630.2 696.0 770.8
800 32.4 32.4 32.1 32.7 729.1 800.8 882.1
900 28.7 28.7 28.4 29.0 824.7 901.5 988.7
1000 25.8 26.1 25.8 26.4 908.3 989.1 1081.0
1100 23.4 23.2 23.0 23.4 1023.7 1109.7 1207.5
1200 21.4 21.5 21.3 21.7 1106.0 1195.4 1297.1
1300 19.7 19.6 19.4 19.8 1215.1 1308.5 1414.9
1400 18.3 18.2 18.0 18.4 1310.1 1406.7 1517.0
1500 17.0 16.9 16.7 17.1 1412.5 1512.4 1626.4
1600 16.0 15.8 15.6 16.0 1512.5 1615.2 1732.7
1700 15.0 15.0 14.9 15.2 1594.5 1699.3 1819.4

CONSTANT-CURRENT VS. LATCH-OFF OPERATION AND IMPACT ON OUTPUT VOLTAGE

During normal operation the constant-current device (TPS2553-Q1) has a load current that is less than the
current-limit threshold and the device is not limiting current. During normal operation the N-channel MOSFET is
fully enhanced, and VOUT = VIN - (IOUT x rDS(on)). The voltage drop across the MOSFET is relatively small
compared to VIN, and VOUT ≉ VIN.
During the initial onset of an overcurrent event, the constant-current device (TPS2553-Q1) limits current to the
programmed current-limit threshold set by RILIM by operating the N-channel MOSFET in the linear mode. During
current-limit operation, the N-channel MOSFET is no longer fully-enhanced and the resistance of the device
increases. This allows the device to effectively regulate the current to the current-limit threshold. The effect of
increasing the resistance of the MOSFET is that the voltage drop across the device is no longer negligible (VIN ≠
VOUT), and VOUT decreases. The amount that VOUT decreases is proportional to the magnitude of the overload
condition. The expected VOUT can be calculated by IOS × RLOAD, where IOS is the current-limit threshold and
RLOAD is the magnitude of the overload condition. For example, if IOS is programmed to 1 A and a 1 Ω overload
condition is applied, the resulting VOUT is 1 V.

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The constant-current device (TPS2553-Q1) operates during the initial onset of an overcurrent event, if the
overcurrent event lasts longer than the internal delay "deglitch" circuit (7.5-ms typ). The constant-current device
(TPS2553-Q1) asserts the FAULT flag after the deglitch period and continues to regulate the current to the
current-limit threshold indefinitely. In practical circuits, the power dissipation in the package will increase the die
temperature above the overtemperature shutdown threshold (135°C min), and the device will turn off until the die
temperature decreases by the hysteresis of the thermal shutdown circuit (10°C typ). The device will turn on and
continue to thermal cycle until the overload condition is removed. The constant-current devices resume normal
operation once the overload condition is removed.

POWER DISSIPATION AND JUNCTION TEMPERATURE

The low on-resistance of the N-channel MOSFET allows small surface-mount packages to pass large currents. It
is good design practice to estimate power dissipation and junction temperature. The below analysis gives an
approximation for calculating junction temperature based on the power dissipation in the package. However, it is
important to note that thermal analysis is strongly dependent on additional system level factors. Such factors
include air flow, board layout, copper thickness and surface area, and proximity to other devices dissipating
power. Good thermal design practice must include all system level factors in addition to individual component
analysis.
Begin by determining the rDS(on) of the N-channel MOSFET relative to the input voltage and operating
temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(on)
from the typical characteristics graph. Using this value, the power dissipation can be calculated by:
PD = rDS(on) × IOUT 2
Where:
PD = Total power dissipation (W)
rDS(on) = Power switch on-resistance (Ω)
IOUT = Maximum current-limit threshold (A)
This step calculates the total power dissipation of the N-channel MOSFET.
Finally, calculate the junction temperature:
TJ = PD × θJA + TA
Where:
TA = Ambient temperature (°C)
θJA = Thermal resistance (°C/W)
PD = Total power dissipation (W)
Compare the calculated junction temperature with the initial estimate. If they are not within a few degrees, repeat
the calculation using the "refined" rDS(on) from the previous calculation as the new estimate. Two or three
iterations are generally sufficient to achieve the desired result. The final junction temperature is highly dependent
on thermal resistance θJA, and thermal resistance is highly dependent on the individual package and board
layout. The Thermal Information Table provides example thermal resistance for specific packages and board
layouts.

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UNIVERSAL SERIAL BUS (USB) POWER-DISTRIBUTION REQUIREMENTS

One application for this device is for current-limiting in universal serial bus (USB) applications. The original USB
interface was a 12-Mb/s or 1.5-Mb/s, multiplexed serial bus designed for low-to-medium bandwidth PC
peripherals (e.g., keyboards, printers, scanners, and mice). As the demand for more bandwidth increased, the
USB 2.0 standard was introduced increasing the maximum data rate to 480-Mb/s. The four-wire USB interface is
conceived for dynamic attach-detach (hot plug-unplug) of peripherals. Two lines are provided for differential data,
and two lines are provided for 5-V power distribution.
USB data is a 3.3-V level signal, but power is distributed at 5 V to allow for voltage drops in cases where power
is distributed through more than one hub across long cables. Each function must provide its own regulated 3.3 V
from the 5-V input or its own internal power supply. The USB specification classifies two different classes of
devices depending on its maximum current draw. A device classified as low-power can draw up to 100 mA as
defined by the standard. A device classified as high-power can draw up to 500 mA. It is important that the
minimum current-limit threshold of the current-limiting power-switch exceed the maximum current-limit draw of
the intended application. The latest USB standard should always be referenced when considering the current-
limit threshold
The USB specification defines two types of devices as hubs and functions. A USB hub is a device that contains
multiple ports for different USB devices to connect and can be self-powered (SPH) or bus-powered (BPH). A
function is a USB device that is able to transmit or receive data or control information over the bus. A USB
function can be embedded in a USB hub. A USB function can be one of three types included in the list below.
• Low-power, bus-powered function
• High-power, bus-powered function
• Self-powered function
SPHs and BPHs distribute data and power to downstream functions. The TPS2553-Q1 has higher current
capability than required for a single USB port allowing it to power multiple downstream ports.

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SELF-POWERED AND BUS-POWERED HUBS

A SPH has a local power supply that powers embedded functions and downstream ports. This power supply
must provide between 4.75 V to 5.25 V to downstream facing devices under full-load and no-load conditions.
SPHs are required to have current-limit protection and must report overcurrent conditions to the USB controller.
Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs.
A BPH obtains all power from an upstream port and often contains an embedded function. It must power up with
less than 100 mA. The BPH usually has one embedded function, and power is always available to the controller
of the hub. If the embedded function and hub require more than 100 mA on power up, the power to the
embedded function may need to be kept off until enumeration is completed. This is accomplished by removing
power or by shutting off the clock to the embedded function. Power switching the embedded function is not
necessary if the aggregate power draw for the function and controller is less than 100 mA. The total current
drawn by the bus-powered device is the sum of the current to the controller, the embedded function, and the
downstream ports, and it is limited to 500 mA from an upstream port.

LOW-POWER BUS-POWERED AND HIGH-POWER BUS-POWERED FUNCTIONS

Both low-power and high-power bus-powered functions obtain all power from upstream ports. Low-power
functions always draw less than 100 mA; high-power functions must draw less than 100 mA at power up and can
draw up to 500 mA after enumeration. If the load of the function is more than the parallel combination of 44 Ω
and 10 μF at power up, the device must implement inrush current-limiting.

USB POWER-DISTRIBUTION REQUIREMENTS

USB can be implemented in several ways regardless of the type of USB device being developed. Several power-
distribution features must be implemented.
• SPHs must:
– current-limit downstream ports
– Report overcurrent conditions
• BPHs must:
– Enable/disable power to downstream ports
– Power up at <100 mA
– Limit inrush current (<44 Ω and 10 μF)
• Functions must:
– Limit inrush currents
– Power up at <100 mA
The feature set of the TPS2553-Q1 meets each of these requirements. The integrated current-limiting and
overcurrent reporting is required by self-powered hubs. The logic-level enable and controlled rise times meet the
need of both input and output ports on bus-powered hubs and the input ports for bus-powered functions.

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AUTO-RETRY FUNCTIONALITY
Some applications require that an overcurrent condition disables the part momentarily during a fault condition
and re-enables after a pre-set time. This auto-retry functionality can be implemented with an external resistor and
capacitor. During a fault condition, FAULT pulls low disabling the part. The part is disabled when EN is pulled
low, and FAULT goes high impedance allowing CRETRY to begin charging. The part re-enables when the voltage
on EN reaches the turnon threshold, and the auto-retry time is determined by the resistor/capacitor time
constant. The part will continue to cycle in this manner until the fault condition is removed.

0.1 mF TPS2553-Q1
Input Output
IN OUT
RFAULT RLOAD
100 kW CLOAD

ILIM
FAULT RILIM
20 kW
EN GND
CRETRY
0.1 mF Power Pad

Figure 25. Auto-Retry Functionality

Some applications require auto-retry functionality and the ability to enable/disable with an external logic signal.
The figure below shows how an external logic signal can drive EN through RFAULT and maintain auto-retry
functionality. The resistor/capacitor time constant determines the auto-retry time-out period.
TPS2553-Q1
Input 0.1 mF
Output
IN OUT
RLOAD
CLOAD

External Logic ILIM

RFAULT RILIM
Signal & Driver FAULT
100 kW 20 kW
EN GND
CRETRY
0.1 mF Power Pad

Figure 26. Auto-Retry Functionality With External EN Signal

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TWO-LEVEL CURRENT-LIMIT CIRCUIT

Some applications require different current-limit thresholds depending on external system conditions. Figure 27
shows an implementation for an externally controlled, two-level current-limit circuit. The current-limit threshold is
set by the total resistance from ILIM to GND (see the Programming the Current-Limit Threshold section). A logic-
level input enables/disables MOSFET Q1 and changes the current-limit threshold by modifying the total
resistance from ILIM to GND. Additional MOSFET/resistor combinations can be used in parallel to Q1/R2 to
increase the number of additional current-limit levels.

NOTE
ILIM should never be driven directly with an external signal.

Input 0.1 mF Output

IN OUT
RFAULT RLOAD
CLOAD
100 kW R1
210 kW
ILIM
Fault Signal FAULT R2
22.1 kW
Control Signal EN GND

Power Pad Q1 Current Limit

2N7002 Control Signal

Figure 27. Two-Level Current-Limit Circuit

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 PACKAGE OPTION ADDENDUM

www.ti.com 24-Jan-2013

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Qty Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Top-Side Markings Samples
(1) Drawing (2) (3) (4)

TPS2553QDBVRQ1 ACTIVE SOT-23 DBV 6 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR PYEQ
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
Only one of markings shown within the brackets will appear on the physical device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TPS2553-Q1 :

• Catalog: TPS2553

NOTE: Qualified Version Definitions:

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Jan-2013

• Catalog - TI's standard catalog product

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 5-Dec-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS2553QDBVRQ1 SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 5-Dec-2012

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS2553QDBVRQ1 SOT-23 DBV 6 3000 180.0 180.0 18.0

Pack Materials-Page 2
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