Translated from Chinese (Simplified) to English - www.onlinedoctranslator.
com
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
describe /Descriptions
TO-3P plastic package insulated gate bipolar transistor.Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.
Features /Features
Low gate charge, positive temperature coefficient, low saturation voltage drop, RoHS product.
Low gate charge,, Low saturation voltage,Positive temperature coefficient, RoHS product.
Application /Applications
Inverter, frequency converter, induction cooker, uninterruptible power supply.
General purpose inverter, Frequency converters, Induction Heating(IH), Uninterrupted Power
Supply(UPS).
Internal equivalent circuit /Equivalent Circuit
Pinout /Pinning
1
2
3
PIN1:Gate PIN 2:Collector PIN 3:Emitter
Enlargement and stamp code /hFEClassifications & Marking
See stamp description.See Marking Instructions.
http://www.fsbrec.com 1/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Limit parameters /Absolute Maximum Ratings(Ta=25℃)
parameter symbol Numeric unit
Parameter Symbol Rating Unit
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
Collector current 30 A
IC
Collector current@TC=100℃ 15 A
Collector peak current,
ICM 45 A
TPlimited by TJMAX
Diode forward current@TC=100℃ IF 15 A
Diode maximum forward current IFM 45 A
Power dissipation(TC=25℃) 186 W
PD
Power dissipation(Tc=100℃) 74 W
Operating junction and storage temperature
TJ,Tstg - 55~150 ℃
range
Maximum temperature for soldering TL 300 ℃
IGBT thermal resistance,junction-case Rth(jc) 0.67 ℃/W
Diode thermal resistance,junction-case Rth(jC) 2.88 ℃/W
Thermal resistance,junction-ambient Rth(ja) 40 ℃/W
Electrical performance parameters /Electrical Characteristics(Ta=25℃)
parameter symbol Test conditions Minimum Typical Value Maximum unit
Parameter Symbol Test Conditions Min Type Max Unit
Collector-emitter breakdown
VCES VGE=0V; ICE=250uA 1200 - - V
voltage
Zero gate voltage Collector
ICES VGE=0V;VCE=1200V - - 1 mA
current
Gate-body leakage current IGES VGE= ±20V; VCE=0V - - ±250 nA
Gate threshold voltage VGE(th) IC=15mA;VCE=VGE 5.0 6.4 7.0 V
Collector-emitter saturation
VCE(sat) IC=15A; VGE=15V - 2 2.5 V
voltage
Input capacitance Cies - 2620 -
Output capacitance Coes VCE=30V,VGE=0V,f=1MHz - 67 - pF
Reverse transfer capacitance Cres - 43 -
http://www.fsbrec.com 2/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Electrical performance parameters /Electrical Characteristics(Ta=25℃)
parameter symbol Test conditions Minimum Typical Value Maximum unit
Parameter Symbol Test Conditions Min Type Max Unit
Turn-on delay time td(ON) - 25 -
Rise time tr - 48 -
ns
Turn-off delay time td(OFF) - 155 -
VCE=600V IC=15A
Fall time tf RG=15Ω VGE=15/0V - 115 -
Inductive Load
Turn-On Switching Loss Eon - 0.67 -
Turn-Off Switching Loss Eoff - 0.45 - mJ
Total Switching Loss Ets - 1.12 -
Total gate charge QG - 130 180
VCE=600V IC=15A
Gate-emitter charge QGE - 15 nC
VGE=15V
twenty two
Gate-collector charge QGC - 50 65
Diode forward voltage VF IF=15A - 1.2 2.0 V
Reverse recovery time Trr - 330 360 ns
Diode Peak Reverse Recovery IF=15A
Irr - 30 40 A
Current di/dt=200A/μS
Reverse recovery charge QUR - 4770 6600 nC
http://www.fsbrec.com 3/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Electrical parameter curve /Electrical Characteristic Curve
http://www.fsbrec.com 4/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Electrical parameter curve /Electrical Characteristic Curve
http://www.fsbrec.com 5/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Waveform /Wave curve
http://www.fsbrec.com 6/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Dimensions /Package Dimensions
http://www.fsbrec.com 7/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Seal Description /Marking Instructions
BR
G15N120D
****
illustrate:
BR: Company Code
G15N120D: Product model
* * * *: It is the production batch code, which changes with the production batch number.
Note:
BR: Company Code.
G15N120D: Product Type.
****: Lot No. Code, code change with Lot No.
http://www.fsbrec.com 8/9
BRG15N120D
Rev.D Oct.-2015 DATA SHEET
Wave soldering temperature curve (lead-free) /Temperature Profile for Dip Soldering(Pb-Free)
illustrate: Note:
1, Preheating temperature25~150°C, time60~90sec; 2, Peak 1. Preheating: 25~150℃,Time: 60~90sec.
temperature255±5℃, time duration5±0.5sec; 3, the cooling 2.Peak Temp.:255±5℃,Duration:5±0.5sec.
rate of the welding process is2~10℃/sec. 3. Cooling Speed: 2~10℃/sec.
Soldering heat resistance test conditions / Resistance to Soldering Heat Test Conditions
temperature:270±5℃ time:10±1 sec. Temp.:270±5℃ Time:10±1 sec
Packaging specifications /Packaging SPEC.
Tube packaging /TUBE
Package Type UnitsPacking quantity DimensionPacking size (unit:mm3)
Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box
Package Tubecasing Inner Boxbox Outer Boxbox
Piece/Casing Sleeve/Box Piece/box Box/Carton Piece/box
TO-3P 30 15 450 5 2250 497.5×46×8 555×164×50 575×290×180
Instructions for use /Notices
http://www.fsbrec.com 9/9
