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Stps 3060 C

The STPS3060CW is a high voltage dual Schottky rectifier designed for switchmode power supplies, capable of handling up to 2 x 15 A with a maximum reverse voltage of 60 V. It features low forward voltage drop, negligible switching losses, and high reverse avalanche surge capability, making it suitable for high frequency applications. Packaged in TO-247, it is optimized for medium voltage operations and has a maximum junction temperature of 150°C.
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0% found this document useful (0 votes)
16 views4 pages

Stps 3060 C

The STPS3060CW is a high voltage dual Schottky rectifier designed for switchmode power supplies, capable of handling up to 2 x 15 A with a maximum reverse voltage of 60 V. It features low forward voltage drop, negligible switching losses, and high reverse avalanche surge capability, making it suitable for high frequency applications. Packaged in TO-247, it is optimized for medium voltage operations and has a maximum junction temperature of 150°C.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

® STPS3060CW

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS A1

IF(AV) 2 x 15 A K

A2

VRRM 60 V
Tj (max) 150°C
VF (max) 0.75 V

FEATURES AND BENEFITS


■Negligible switching losses A2
■Low forward voltage drop K
A1
■Low capacitance
■High reverse avalanche surge capability. TO-247
STPS3060CW
DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters.
Packaged in TO-247, this device is intended for
use in medium voltage operation, and particularly,
in high frequency circuitries where low switching
losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit


VRRM Repetitive peak reverse voltage 60 V
IF(RMS) RMS forward current Per diode 30 A
IF(AV) Average forward current δ = 0.5 Tc = 130°C Per diode 15 A
Per device 30
IFSM Surge non repetitive forward current tp = 10 ms Per diode 200 A
Sinusoidal
IRRM Repetitive peak reverse current tp=2 µs Per diode 1 A
F=1kHz
IRSM Non repetitive peak reverse current tp = 100µs Per diode 1 A
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 1000 V/µs

dPtot 1
* : < thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a )

October 2003 - Ed: 1A 1/4


STPS3060CW

THERMAL RESISTANCES

Symbol Parameter Value Unit


Rth(j-c) Junction to case Per diode 1.5 °C/W
Total 0.8
Rth(c) Coupling 0.1 °C/W

When the diodes 1 and 2 are used simultaneously :


∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit


IR * Reverse leakage Tj = 25°C VR = VRRM 150 µA
current 100 mA
Tj = 125°C
VF * Forward voltage drop Tj = 25°C IF = 15 A 0.85 V

Tj = 125°C IF = 15 A 0.65 0.75

Tj = 25°C IF = 30 A 1.05

Tj = 125°C IF = 30 A 0.80 0.90


Pulse test: * tp = 5ms, δ < 2%
**tp = 380µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.6 x IF(AV) + 0.01 IF2(RMS)

Fig. 1: Conduction losses versus average current Fig. 2: Average forward current versus ambient
(per diode). temperature (δ=0.5, per diode).
PF(AV)(W) IF(AV)(A)
16 17
δ = 0.1 δ = 0.2 16 Rth(j-a)=Rth(j-I)
14 δ = 0.05 δ = 0.5 15
14
12 13
12
δ=1 11
10
10
9 Rth(j-a)=15°C/W
8
8
7
6 6
5
4 4 T
T
3
2 2
IF(AV)(A) δ=tp/T tp Tamb(°C)
δ=tp/T tp 1
0 0
0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150

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STPS3060CW

Fig. 3: Non repetitive surge peak forward current Fig. 4: Relative variation of thermal impedance
versus overload duration (maximum values, per junction to case versus pulse duration.
diode).
IM(A) Zth(j-c)/Rth(j-c)
160 1.0

140 0.9

0.8
120
0.7
δ = 0.5
100
0.6
TC=50°C
80 0.5

0.4 δ = 0.2
60
TC=75°C
0.3 δ = 0.1
40
T
IM TC=110°C 0.2
Single pulse
20 t
0.1
δ=0.5 t(s) tp(s) δ=tp/T tp
0 0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00

Fig. 5: Reverse leakage currrent versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode). voltage applied (typical values, per diode).
IR(mA) C(pF)
1.E+01 10000
F=1MHz
Tj=125°C
VOSC=30mVRMS
Tj=25°C

1.E+00
Tj=100°C

Tj=75°C
1.E-01 1000

Tj=50°C

1.E-02

VR(V) VR(V)
1.E-03 100
5 10 15 20 25 30 35 40 45 50 55 60 1 10 100

Fig. 7: Forward voltage drop versus forward


current (maximum values, per diode).
IFM(A)
1000

Tj=125°C

100

10

VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

3/4
STPS3060CW

PACKAGE MECHANICAL DATA


TO-247

DIMENSIONS
V REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V Dia. A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
A F 1.00 1.40 0.039 0.055
H
F1 3.00 0.118
F2 2.00 0.078
L5 F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
L G 10.90 0.429
L2 L4
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
F1 F2 L1 L1 3.70 4.30 0.145 0.169
F3 L2 18.50 0.728
D
V2
F4
L3 L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
F(x3)
M E
L5 5.50 0.216
G
= = M 2.00 3.00 0.078 0.118
V 5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143

■ Cooling method : C
■ Recommended torque value : 0.8m.N
■ Maximum torque value : 1.0m.N

Delivery
Ordering type Marking Package Weight Base qty
mode
STPS3060CW STPS3060CW TO-247 4.4 g 50 Tube
■ Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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