Fundamentals of Electrical and

Electronics Engineering)

Department of Electronics and Communication

PDPM-IIITDM, Jabalpur

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 Transistor Construction
• A bipolar junction transistor is a three-
terminal, three layers semiconductor
device that consists of two p-n
junctions which are able to amplify or
magnify a signal. It is a current
controlled device.
• BJT consists of three terminal:
→ collector : C
→ base : B
→emitter : E
• Two types of BJT : pnp and npn
• The 3-layers consisting of:
2 n-type and 1 p-type layers of material: npn transistor
2 p-type and 1 n-type layers of material: pnp transistor2
 Transistor Construction
◼ Base is located at the middle and it is thinner than collector
and emitter
◼ The emitter and collector terminals are made of the same type
of semiconductor material, while the base of the other type of
material
◼ The term bipolar reflects the fact that holes and electrons
participate in the injection process into the oppositely polarized
material
◼ A single pn junction has two different types of bias:
◼ forward bias
◼ reverse bias
◼ Thus, a two-pn-junction device (Transistor) has four types of
bias.
 Transistor Construction

• Different currents:
IC=the collector current
IB= the base current
IE= the emitter current
• The arrow is always drawn on
the emitter
• The arrow always point
toward the n-type
• The arrow indicates the
direction of the emitter
current:
pnp:E→ B
npn: B→ E
 Transistor Construction

◼ By imaging the analogy of

diode, transistor can be
construct like two diodes that
connected together.
◼ The work of transistor is
based on work of diode.
 Transistor Operation

◼ The operation of transistor is used

in three configuration as
Common base Forward-biased
Common Emitter junction

Common Collector
◼ In this case common base pnp
configuration is explained
◼ The operation of the pnp transistor
is exactly the same if the roles
played by the electron and hole
are interchanged.
◼ One p-n junction of a transistor is Reversed-biased
junction
reverse-biased, whereas the other
is forward-biased.
 Transistor Operation

◼ Both biasing potentials have been

applied to a pnp transistor and
resulting majority and minority carrier
flows indicated.
◼ Majority carriers (+) will diffuse
across the forward-biased p-n
junction into the n-type material.
◼ A very small number of carriers (+)
will through n-type material to the
base terminal. Resulting IB is typically
in order of microamperes.
◼ The large number of majority carriers
will diffuse across the reverse-biased
junction into the p-type material
connected to the collector terminal.
 Transistor Operation

◼ Majority carriers can cross the

reverse-biased junction because the
injected majority carriers will appear
as minority carriers in the n-type
material.
◼ Applying KCL to the transistor :
IE = IC + IB
◼ The comprises of two components –
the majority and minority carriers
IC = ICmajority + ICOminority
◼ ICO is the collector current (IC) with
emitter terminal open and is called
leakage current.
 Common-Base Configuration

 In Common-base configuration, base is common to both

input and output.
 Base is usually the terminal closest to or at ground
potential.
 All current directions will refer to conventional (hole) flow
and the arrows in all electronic symbols have a direction
defined by this convention.
 The applied biasing (voltage sources) are such as to
establish current in the direction indicated for each
branch.
 Common-Base Configuration

Current Amplification factor: ratio of the

change in collector current to the change in
emitter current, at a constant base-collector
voltage

Expression for collector current: pnp

IC = ICmajority + ICOminority

But

npn
 Common-Base Configuration

◼ Characteristics of common-base transistor:

- (i). Input or driving point characteristics.
- (ii). Output or collector characteristics

Input Characteristics: The input

characteristics of a common base (CB)
configuration transistor are the curves
that show the relationship between the
emitter current (IE) and the emitter-
base voltage (VEB) while the collector-
base voltage (VCB) remains constant
 Common-Base Configuration

◼ Output Characteristics: Output characteristics are the relationship

between output current IC and output voltage VCB keeping input
current IE constant.
• The output characteristics has 3 basic regions:
-Active region:The region in which the
transistors operate as an amplifier.
-Saturation region: The region in
which the transistor is fully on and
operates as a switch such that
collector current is equal to the
saturation current.
-Cutoff region: The region in which
the transistor is fully off and collector
current is equal to zero.
Common-Base Configuration

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Common-Base Configuration

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 Common-Base Configuration

Circuit connection for common base

configuration is

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 Common-Emitter Configuration

• The common emitter configuration is a

transistor circuit arrangement where the
emitter terminal serves as a common node
for both the input and output signals
• The base and emitter terminals are used
for the input signal, while the collector and
emitter terminals are used for the output
signal pnp

Current Amplification factor: ratio of the

change in collector current to the change
in base current,

npn
 Common-Emitter Configuration

Expression for collector current

If IB=0 (base circuit open),

So,

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 Common-Emitter Configuration

and

Now,

So,

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 Common-Emitter Configuration

◼ Characteristics of common-emitter transistor:

- (i). Input characteristics.
- (ii). Output characteristics

Input Characteristics: The input

characteristics of a common emitter
(CE) configuration transistor are the
curves that show the relationship
between the base current (IB) and the
base-emitter voltage (VBE) while the
collector-emitter voltage (VCE) remains
constant
 Common-emitter Configuration

◼ Output Characteristics: Output characteristics are the relationship

between output current IC and output voltage VCE keeping input
current IB constant.
• The output characteristics has 3 basic regions:
-Active region:The region in which the
transistors operate as an amplifier.
-Saturation region: The region in
which the transistor is fully on and
operates as a switch such that
collector current is equal to the
saturation current.
-Cutoff region: The region in which
the transistor is fully off and collector
current is equal to zero.
Common-Emitter Configuration

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 Common-Emitter Configuration

Circuit connection for common emitter

configuration is

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 Common-Collector Configuration

• A common collector (CC) configuration is a

type of bipolar junction transistor (BJT)
circuit where the collector terminal is
shared by both the input and output
circuits
• The base and collector terminals are used
for the input signal, while the collector and
emitter terminals are used for the output
signal
Current Amplification factor: ratio of the
change in emittor current to the change in
base current,
 Common-Collector Configuration

Expression for collector current

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Common-Collector Configuration

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 Common-Collector Configuration

◼ Characteristics of common-collector transistor:

- (i). Input characteristics.
- (ii). Output characteristics
Input Characteristics: The input
characteristics of a common collector
(CC) configuration transistor are the
curves that show the relationship
between the base current (IB) and the
base-collector voltage (VCB) while the
collector-emitter voltage (VCE) remains
constant
 Common-Collector Configuration

◼ Output Characteristics: Output characteristics are the relationship

between output current IE and output voltage VCE keeping input
current IB constant.
• The output characteristics has 3 basic regions:
-Active region:The region in which the
transistors operate as an amplifier.
-Saturation region: The region in
which the transistor is fully on and
operates as a switch such that
collector current is equal to the
saturation current.
-Cutoff region: The region in which
the transistor is fully off and output
current is equal to zero.