Si2318DS

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)
Available
0.045 at VGS = 10 V 3.9
40 • TrenchFET® Power MOSFET
0.058 at VGS = 4.5 V 3.5
APPLICATIONS
• Stepper Motors
• Load Switch

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2318DS( C8)*
*Marking Code

Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free)

Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5s Steady State Unit
Drain-Source Voltage VDS 40
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 3.9 3.0
Continuous Drain Current (TJ = 150 °C)a, b ID
TA = 70 °C 3.1 2.4
A
Pulsed Drain Currentb IDM 16
Continuous Source Current (Diode Conduction)a, b IS 0.8
TA = 25 °C 1.25 0.75
Power Dissipationa, b PD W
TA = 70 °C 0.8 0.48
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t≤5s 75 100
Maximum Junction-to-Ambienta RthJA
Steady State 120 166 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature

Document Number: 72322 [Link]

S09-0130-Rev. B, 02-Feb-09 1
Si2318DS
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Limits
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 40
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 32 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS µA
VDS = 32 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 4.5 V, VGS = 10 V 6 A
VGS = 10 V, ID = 3.9 A 0.036 0.045
Drain-Source On-Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 3.5 A 0.045 0.058
Forward Transconductancea gfs VDS = 10 V, ID = 3.9 A 11 S
Diode Forward Voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 10 15
Gate-Source Charge Qgs VDS = 20 V, VGS = 10 V, ID = 3.9 A 1.6 nC
Gate-Drain Charge Qgd 2.1
Gate Resistance Rg 1.8 Ω
Input Capacitance Ciss 540
Output Capacitance Coss VDS = 20 V, VGS = 0 V, f = 1 MHz 80 pF
Reverse Transfer Capacitance Crss 45
Switching
Turn-On Delay Time td(on) 5 10
Rise Time tr VDD = 20 V, RL = 20 Ω 12 20
ns
Turn-Off Delay Time td(off) ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 20 30
Fall Time tf 15 25
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20 20

VGS = 10 V thru 5 V

16 4V 16
I D - Drain Current (A)

ID - Drain Current (A)

12 12

8 8

TC = 125 °C
4 4
1 V, 2 V
3V 25 °C
- 55 °C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

[Link] Document Number: 72322

2 S09-0130-Rev. B, 02-Feb-09
 Si2318DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08 800
R DS(on) - On-Resistance (Ω)

0.06 600 Ciss

C - Capacitance (pF)
VGS = 4.5 V

0.04 VGS = 10 V 400

0.02 200
Coss

Crss
0.00 0
0 4 8 12 16 20 0 8 16 24 32 40

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.0
VDS = 20 V VGS = 10 V
ID = 3.9 A ID = 3.9 A
VGS - Gate-to-Source Voltage (V)

8 1.7
R DS(on) - On-Resistance
(Normalized)

6 1.4

4 1.1

2 0.8

0 0.5
0 2 4 6 8 10 12 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

10 0.20

0.16
R DS(on) - On-Resistance (Ω)

TJ = 150 °C
I S - Source Current (A)

ID = 3.9 A
0.12
1

TJ = 25 °C 0.08

0.04

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72322 [Link]

S09-0130-Rev. B, 02-Feb-09 3
Si2318DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4 10

0.2
8
ID = 250 µA
V GS(th) Variance (V)

0.0

Power (W)
6
TA = 25 °C
- 0.2

4
- 0.4

2
- 0.6

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100

Limited by RDS(on)*

10 µs
10
ID - Drain Current (A)

100 µs

1.0
1 ms

10 ms

0.1 100 ms
TA = 25 °C 1 s, 10 s
Single Pulse 100 s, DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 166 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see [Link]/ppg?72322.

[Link] Document Number: 72322

4 S09-0130-Rev. B, 02-Feb-09
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 [Link]

09-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 [Link]

Revision: 21-Jan-08 25
 Legal Disclaimer Notice
[Link]
Vishay
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Revision: 01-Jan-2025 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000