POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

POWER ELECTRONICS MCQ

1) Gate circuit or triggering circuit of a thyristor is

(A) may be low power or high power circuit

(B) magnetic circuit

(C) high power circuit

(D) lower power circuit

2) Which of the following option is not correct about an ac drive compared to

a dc drive?

(A) AC drives are less expensive

(B) Power converters for AC drives generate harmonic in the supply system and
load circuit

(C) Power converters for AC drives are simple

(D) AC motors are lighter in weight

3) The most suitable device for high frequency inversion in SMPS is

(A) GTO

(B) MOSFET

(C) BJT

(D) IGBT

4) Conductive modulation is a phenomenon which occurs in

(A) IGBT

(B) GTO thyristor

(C) Power MOSFET

(D) Power BJT

5) A current source inverter can be

(A) force commutated

(B) load commutated

POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(C) neither load nor force commutated

(D) either load or force commutated

6) The feedback diodes in a d.c. thyristor inverter

(A) improve the harmonic distortion of the inverter output current

(B) improve the switching properties of the inverter

(C) provide reverse bias effectively to the thyristors for turn off

(D) freewheel the load current

7) The advantage of using a freewheeling diode with bridge type ac to dc

converter is

(A) improved input power factor

(B) regenerative braking

(C) reduced cost of system

(D) reliable speed control

8) Reverse recovery current in a diode depends upon

(A) temperature

(B) storage charge

(C) forward field current

(D) peak inverse voltage

9) Thyristors are classified as inverter grade or converter grade based on

(A) turn-off time

(B) holding current

(C) forward breakdown voltage

(D) turn on time

10) The peak inverse voltage in ac to dc converter system is highest in

(A) single phase full converter

(B) single phase full wave midpoint converter

POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(C) 3 phase half wave converter

(D) 3 phase bridge converter

11) A four quadrant operation requires

(A) two semi converters connected back to back

(B) two full converters connected in parallel

(C) two semi-converters is series

(D) two full converters connected back to back

12) In a thyristor, anode current is made up of

(A) electrons and holes

(B) electrons only

(C) holes only

(D) none of the above

13) The speed of a dc motor can be controlled by using

(A) transistors

(B) thyristors

(C) diodes

(D) either diodes or thyristors

14) Dynamic equalizing circuit is used for

(A) equal division of current through each thyristor in series

(B) equal division of voltage across each thyristor in parallel

C) equal division of voltage across each thyris tor in parallel

(D) equal division of voltage across each thyristor

15) Thyristor can be protected from over voltages by using

(A) snuber circuit

(B) heat sink

POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(C) fuse

(D) voltage clamping device

16) Leakage current flows through the thyristor in

(A) forward conduction mode

(B) both forward and reverse blocking mode

(C) reverse blocking mode

(D) forward blocking mode

17) Internal cycle control

(A) is very fast in action

(B) does not introduce harmonics in the supply lines

(C) can be used only for loads with large time constants

(D) cannot used on inductive loads

18) A GTO can be turned on by applying

(A) positive source signal

(B) positive drain signal

(C) positive gate signal

(D) none of these

19) A power MOSFET has three terminals called

(A) collector, emitter and base

(B) drain, source and base

(C) drain, source and gate

(D) collector, emitter and gate

20)The main advantage of IGBT over SCR in power electronics is

(A) reduced weight

(B) self commutating property

POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(C) self cooling property

(D) very high reliability

21) Surge current rating of an SCR specifies the maximum

(A) repetitive current with sine wave

(B) non repetitive current with sine wave

(C) repetitive current with rectangular wave

(D) non repetitive current with rectangular wave

22) A cyclo converter requires

(A) natural commutation in step down mode and forced commutation in step up mode

(B) forced commutation in step down mode and natural commutation in step up mode

(C) forced commutation in both step up and step down mode

(D) natural commutation in both step up and step down mode

23) By controlling the point in each half cycle when the SCR turns on, the
SCR based control circuit achieves

(A) low distortion but high cost

(B) high efficiency but increased distortion

(C) low cost but low efficiency

(D) high efficiency but high cost

24) The turn off time is longer than the turn on time in SCR because

(A) the forward break over voltage is high

(B) the gate pulse has been removed

(C) the anode and cathode junctions get reverse biased while gate junction is still
forward biased

(D) none of the above

25) Practical way of obtaining static voltage equalization in series connected

SCRs is by the use of
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(A) one resistor across the string

(B) resistors of the same value across each SCR

(C) resistors of different values across each SCR

(D) one resistor in series with each SCR

26) The nature of load current, i.e., whether load is continuous or

discontinuous is controlled rectifiers

(A) does not depend on type of load and firing angle delay

(B) depends only on the firing angle delay

(C) depends only on the type of load

(D) depends both on the type of load an firing angle delay

27) The duration of reverse recovery transient affects which of the following
aspect in a power diode?

(A) speed of response

(B) peak inverse voltage

(C) average current

(D) forward threshold voltage

28) Which of the following converters can feed power in any of the four
quantities?

(A) combination of a semi and full converter

(B) semi-conductor

(C) dual converter

(D) full converter

29) A single phase IGBT bridge inverter, compared to a single pulse PWM control,
multiple pulse PWM

(A) gives lower harmonic content in the output voltage

(B) requires more number of switching devices

POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

(C) gives higher maximum ems output voltage

(D) gives higher harmonic content in output voltage

30. An IGBT has three terminals called:

a) Collector, Emitter and Base
b) Drain, Source and Base
c) Drain, Source and Gate
d) Collector, Emitter and Gate

31. The function of snubber circuit connected across the SCR is to:
a) Suppress dv/dt
b) Increase dv/dt
c) Decrease dv/dt
d) Decrease di/dt

32. An UJT exhibits negative resistance region:

a) Before the break point
b) Between peak and valley point
c) After the valley point
d) Both (a) and (c)

33. For dynamic equalizing circuit used for series connected SCRs, the choice of C is
based on:
a) Reverse recovery characteristics
b) Turn-on characteristics
c) Turn-off characteristics
d) Rise time characteristics

34. A four quadrant operation require:

a) Two full converters in series
b) Two full converters connected back to back
c) Two full converters connected in parallel
d) Two semi conductors connected back to back
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

35. In a circulating-current type of dual converter, the nature of the voltage across the
reactor is:
a) Alternating
b) Pulsating
c) Direct
d) Triangular

36. The frequency of the ripple in the output voltage of 3-phase semiconductor depends
on:
a) Firing angle and load resistance
b) Firing angle and load inductance
c) The load circuit parameters
d) Firing angle and the supply frequency

37. A single-phase full bridge inverter can operate in load-commutation mode in case
load consists of:
a) RL load
b) RLC underdamped
c) RLC damped
d) RLC critically damped

38. Practical way of obtaining static voltage equalization in series connected SCRs is by
the use of:
a) One resistor across the string
b) Resistors of different values across each SCR
c) Resistors of the same value across each SCR
d) One resistor in series with each SCR

39. A resistor connected across the gate and cathode of an SCR in a circuit increases its
a) dv/dt rating
b) Holding current
c) Noise Immunity
d) Turn-off time
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

1) A triac is equivalent to two SCRs …………..

In parallel
In series
In inverse-parallel
None of the above

2) A triac is a …………. switch

Bidirectional
Unidirectional
Mechanical
None of the above

3) A triac can pass a portion of …………… half-cyclethrough the load

Only positive
Only negative
Both positive and negative
None of the above

4)A diac has ………….. terminals

Two
Three
Four
None of the above
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

5)A triac has …………….. semiconductor layers

Two
Three
Four
Five

6)The device that does not have the gate terminal is……………….
Triac
FET
SCR
Diac

7)A UJT has ……………….

Two pn junctions
One pn junction
Three pn junctions
None of the above

8)In a UJT, the p-type emitter is ……………. doped

Lightly
Heavily
Moderately
None of the above

9)Power electronics essentially deals with control of a.c.power at

…………
Frequencies above 20 kHz
Frequencies above 1000 kHz
Frequencies less than 10 Hz
50 Hz frequency

10) When the emitter terminal of a UJT is open, theresistance

between the base terminal is generally………………..
High
Low
Extremely low
None of the above
POWER ELECTRONICS MCQ -21EE54 RYMEC,EEE DEPT 2023-24

11) To turn on UJT, the forward bias on the emitter diode should be
…………… the peak point voltage
Less than
Equal to
More than
None of the above

12) Between the peak point and the valley point of UJTemitter
characteristics we have ………….. region
Saturation
Negative resistance
Cut-off
None of the above

13) The device that exhibits negative resistance region is………………..

Diac
Triac
Transistor
UJT

14) The triac is …………….

Like a bidirectional SCR
A four-terminal device
Not a thyristor
Answers (1) and (2)