SIOV metal oxide varistors

General technical information

Date: April 2011

© EPCOS AG 2011. Reproduction, publication and dissemination of this publication, enclosures hereto and the
information contained therein without EPCOS' prior express consent is prohibited.
General technical information

1 General technical information

1.1 Introduction

Despite its many benefits, one of the few drawbacks of semiconductor technology is the vulnera-
bility of solid-state devices to overvoltages. Even voltage pulses of very low energy can produce
interference and damage, sometimes with far-reaching consequences. So, as electronics makes
its way into more and more applications, optimum overvoltage or transient suppression becomes
a design factor of decisive importance.
SIOV® 1) varistors have been proven to be excellent protective devices because of their application
flexibility and high reliability. The metal oxide varistor, with its extremely attractive price/
performance ratio, is an ideal component for limiting surge voltage and current as well as for ab-
sorbing energy.
The EPCOS product range includes radial-leaded disks, block varistors and strap varistors for
power distribution applications. Special types for automotive electrical systems and for telecom
applications round off the product range.
Overvoltage protection devices like SIOV varistors are often referred to in international publica-
tions as a TVSS (transient voltage surge suppressor).

1.2 Definition

Varistors (variable resistors) are voltage-dependent resistors with a symmetrical V/I characteris-
tic curve (figure 2) whose resistance decreases with increasing voltage. Connected in parallel with
the electronic device or circuit that is to be guarded, they form a low-resistance shunt when volt-
age increases and thus prevent any further rise in the surge overvoltage.

Figure 1 Figure 2
Circuit diagram symbol for a varistor Typical V/I characteristic curve of a metal oxide
varistor on a linear scale, using the
SIOV-B60K250 as an example
1) ® Registered trademark for EPCOS metal oxide varistors

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The voltage dependence of varistors or VDRs (voltage dependent resistors) may be approximate-
ly characterized by the formula
,
where α denotes the “nonlinearity” exponent and in this way may be interpreted as a measure of
the “steepness” of the V/I characteristic (more details will follow in section 1.6). In metal oxide
varistors it has been possible to produce α figures of more than 30. This puts their protection lev-
els in the same region as those of zener diodes and suppressor diodes. Exceptional current han-
dling capability combined with response times of < 25 ns make them an almost perfect protective
device. The principle of overvoltage protection by varistors is explained in chapter "Selection pro-
cedure" in section 1.2.

1.3 Microstructure and conduction mechanism

Sintering zinc oxide together with other metal oxide additives under specific conditions produces a
polycrystalline ceramic whose resistance exhibits a pronounced dependence on voltage. This
phenomenon is called the varistor effect.
Figure 3 shows the conduction mechanism in a varistor element in simplified form. The zinc oxide
grains themselves are highly conductive, while the intergranular boundary formed of other oxides
is highly resistive. Only at those points where zinc oxide grains meet does sintering produce
“microvaristors”, comparable to symmetrical zener diodes (protection level approx. 3.5 V). The
electrical behavior of the metal oxide varistor, as indicated by figure 3, results from the number of
microvaristors connected in series or in parallel.
This implies that the electrical properties are controlled by the physical dimensions of the varistor:
Twice the ceramic thickness produces twice the protection level because then twice the num-
ber of microvaristors are arranged in series.
Twice the area produces twice the current handling capability because then twice the number
of current paths are arranged in parallel.
Twice the volume produces almost twice the energy absorption capability because then there
are twice as many absorbers in the form of zinc oxide grains.
The series and parallel connection of the individual microvaristors in the sintered body of a SIOV
also explains its high electrical load capacity compared to semiconductors. While the power in
semiconductors is dissipated almost entirely in one thin p-n junction area, in a SIOV it is distrib-
uted over all the microvaristors, i.e. uniformly throughout the component’s volume. Each mi-
crovaristor is provided with energy absorbers in the form of zinc oxide grains with optimum ther-
mal contact. This permits high absorption of energy and thus exceptionally high surge current
handling capability.

Figure 3: Conduction mechanism in a varistor element

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Grain size
For matching very different levels of protection to ceramic thicknesses that are suitable for fabri-
cation, SIOV varistors have to be produced from ceramics with different voltage gradients. The
variation of raw materials and sintering process influence the growth of grain size (grain diameter
approx. 10 to 100 µm) and thus produce the required specific ceramic voltage (approx. 30 to
250 V/mm). The V/I characteristic of the individual microvaristors is not affected by this.
Ceramics with a small specific voltage (low-voltage types ≤40 V) cannot handle the same current
density as high-voltage types. That explains the differences in surge current, energy absorption
and mechanical dimensions within the various type series. The effect of the different grain sizes is
most apparent between the voltage classes K40 and K50. For example, the maximum permissible
surge current is:
SIOV-S07K40 imax = 250 A
SIOV-S07K50 imax = 1200 A

1.4 Construction

Sintered metal oxide ceramics are processed on different production lines:

Disk types
Here the varistor disk is fitted with leads of tinned copper wire and then the ceramic body is coat-
ed with epoxy resin in a fluidized bed.

Disk varistors in housing

Here the disk varistors are fitted into a housing for special overvoltage fields application.
ThermoFuse (ETFV) types
These are designed for self-protection under abnormal overvoltage conditions.
Fail-safe (SFS) types
No flame or rupture under specified test conditions (see “Reliability data”, “Overvoltage test” in
the data sheet).

Block types
The large electromagnetic forces involved in handling currents between 10 kA and 100 kA call for
solid contacting with special electrodes and potting in a plastic housing. Block varistors are electri-
cally and mechanically connected by screw terminals.

Strap types
After contacting of the varistor ceramics with special bolt-holed electrodes, these components are
coated with epoxy resin in a fluidized bed.
For photos of all constructions see “Overview of types”.

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1.5 Equivalent circuits

Figure 4 shows the simplified equivalent circuit of a metal oxide varistor. From this the behavior of
the varistor can be interpreted for different current ranges.
Leakage current region (< 10–4 A)
In the leakage current region the resistance of an ideal varistor goes towards ∞, so it can be ig-
nored as the resistance of the intergranular boundary will predominate. Therefore RB << RIG. This
produces the equivalent circuit in figure 5:
The ohmic resistance RIG determines behavior at low currents, the V/I curve goes from exponen-
tial to linear (downturn region).
RIG shows a distinct temperature dependence, so a marked increase in leakage current must be
expected as temperature increases.
Normal operating region (10–5 to 103 A)
With RV << RIG and RB << RV, RV determines the electrical behavior (figure 6). The V/I curve
(figure 12) follows to a good approximation the simple mathematical description by an exponential
function (equation 3 in 1.6.1) where α > 30, i.e. the curve appears more or less as a straight line
on a log-log scale.
High-current region (> 103 A)
Here the resistance of the ideal varistor approaches zero. This means that RV << RIG and RV < RB
(figure 7). The ohmic bulk resistance of ZnO causes the V/I curve to resume a linear characteristic
(upturn region).
Capacitance
Equivalent circuits 4 and 5 indicate the capacitance of metal oxide varistors (see product specifi-
cations for typical values).
In terms of overvoltage suppression, a high capacitance is desirable because, with its lowpass
characteristic, it smooths steep surge voltage edges and consequently improves the protection
level.
Lead inductance
The response time of the actual varistor ceramics is in the picosecond region. In the case of lead-
ed varistors, the inductance of the connecting leads causes the response time to increase to val-
ues of several nanoseconds. For this reason, all attempts must be made to achieve a mounting
method with the lowest possible inductance i.e. shortest possible leads.

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Equivalent circuits

Figure 4 Figure 5

Figure 6 Figure 7

L Lead inductance ( 1 nH/mm)

C Capacitance
RIG Resistance of intergranular boundary (ρ  1012 to 1013 Ωcm)
RVAR Ideal varistor (0 to ∞ Ω)
RB Bulk resistance of ZnO (ρ  1 to 10 Ωcm)

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1.6 V/I characteristics

1.6.1 Forms of presentation

The V/I characteristics of metal oxide varistors are similar to those of power functions (odd expo-
nents), so it is fairly obvious that the latter should be used to describe them. As the curves are
symmetrical, only one quadrant is generally shown for reasons of simplification (figure 8).

(equ. 1)
I Current through varistor
K Ceramic constant (depending on varistor type)
V Voltage across varistor
α Nonlinearity exponent
(measure of nonlinearity of curve)

Another possible interpretation of the physical principle underlying these curves is that of a volt-
age-dependent resistance value, and particularly its rapid change at a predetermined voltage.
This phenomenon is the basis of the CTVS protection principle (figure 9).

(equ. 2)

Equations 1 and 2 can be shown particularly clearly on a log-log scale, because power functions
then appear as straight lines:

(equ. 3)

(equ. 4)

This is virtually the only form of presentation used for CTVS characteristics (figures 10 and 11). A
further advantage of the log-log format is the possibility of showing the wide range of the V/I curve
(more than ten powers of 10).
It is evident that the simplified equations 1 to 4 cannot cover the downturn and upturn regions as
described in section 1.5. Here, a mathematical description as shown in equation 21 in chapter
“Application notes” is required.
Determining the nonlinearity exponent α
Two pairs of voltage/current values (V1/I1 and V2/I2) are read from the V/I characteristic of the
varistor and inserted into equation 3, solved for α:

(equ. 5)

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Presentation of the V/I characteristics

Figure 8 Figure 9

Figure 10 Figure 11

1.6.2 Real V/I characteristic and ohmic resistance

Figure 12 shows a typical V/I characteristic with SIOV-B60K250 taken as an example.

The downturn and upturn regions according to equivalent circuits 5 and 7 are easy to make out.
Calculating nonlinearity exponent α
Normally α is determined according to equation 5 from the pairs of values for 1 A and 1 mA of the
V/I characteristic. For figure 12 this means:

The V/I curve of figure 12 is virtually a straight line between 10–4 and 103 A, so it is described over
a wide range to a good approximation by equation 3. The downturn and upturn regions may be
adapted by inserting correction components in equation 3.
Another type of characteristic curve approximation is described in chapter “Application notes”,
section 1.9.1.
Derived from figure 12, figure 13 shows the change in static resistance R = V/I for
SIOV-B60K250. The resistance is > 1 MΩ in the range of the permissible operating voltage,
whereas it can drop by as many as ten powers of 10 in case of overvoltage.

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Figure 12: Real V/I characteristic of a metal oxide varistor as exemplified by SIOV-B60K250

Figure 13: Static resistance of a metal oxide varistor versus protection level as exemplified by
SIOV-B60K250

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1.6.3 Presentation of tolerance band

The real V/I characteristic of individual varistors is subject to a certain deviation, which is primarily
due to minor fluctuations in manufacturing and assembly process parameters. For varistors be-
longing to a certain type, their V/I curves are required to lie entirely within a well defined tolerance
band. The tolerance band shown in figure 14 illustrates this in the case of SIOV-S14K14.
Varistors are operated at one of two conditions: If the circuit is operated at normal operating volt-
age, the varistor will be highly resistive. In an overvoltage event, it will be highly conductive.
These conditions concern two different segments of the V/I curve:
Lefthand part of curve (< 1 mA): This part of the curve refers to the “high-resistance” mode, where
circuit designers may generally want to know about the largest possible leakage current at given
operating voltage. Therefore the lower limit of the tolerance band is shown.
Righthand part of the curve (> 1 mA): This segment covers the “low-resistance” mode in an over-
voltage event, where the circuit designer’s primary concern is the worst-case voltage drop across
the varistor. The upper limit of the tolerance band is shown.
The 1 mA “dividing line” between the two segments does not really have any electrophysical sig-
nificance but it is generally used as a standard reference (varistor voltage – refer to section 1.7.5
for explanations).
Related branches are identified by the same maximum AC operating voltage (here “14”).
V/I characteristic 1 in figure 14 shows the mean value of the tolerance band between the limits in-
dicated by dashed lines. The mean at 1 mA represents the varistor voltage, in this case 22 V. The
tolerance K  ±10% refers to this value, so at this point the tolerance band ranges from 19.8 to
24.2 V.
Leakage current at operating voltage:
A maximum permissibe operating voltage of 18 VDC is specified for SIOV-S14K14. For this, de-
pending on where the varistor is in the tolerance band (figure 14), you can derive a leakage cur-
rent between 6 · 10–6 A and 2 · 10–4 A (region 2). If the varistor is operated at a lower voltage, the
figure for the maximum possible leakage current also drops (e.g. to max. 2 · 10–6 A at 10 VDC).
In the worst case, the peak value of the maximum permissible AC operating voltage

will result in an ohmic peak leakage current of 1 mA (see figure 14, point 3).
Protection level:
Assuming a surge current of 100 A, the voltage across SIOV-S14K14 will increase to between
35 V and 60 V (region 4), depending on where the varistor is in the tolerance band.

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1.6.4 Overlapping V/I characteristics

As explained earlier (section 1.3) the differences in nonlinearity between voltage classes up to
K40 and K50 and above lead to overlapping V/I curves.
In particular with SIOV disk varistors, before selecting voltage rating K40 you should always
check whether K50 is not a more favorable solution. Firstly, the protection level is lower for higher
surge currents, and secondly, the load capability of K50 is considerably higher for varistors of the
same diameter.

Figure 14: Tolerance limits of a metal oxide varistor as exemplified by SIOV-S14K14

Figure 15: Tolerance limits of a metal oxide varistor as exemplified by SIOV-S14K14

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1.7 Terms and descriptions

1.7.1 Operating voltage

The product tables specify maximum AC and DC operating voltages. These figures should only
be exceeded by transients. Automotive types, however, are rated to withstand excessive voltage
(jump start) for up to 5 minutes.
The leakage current at specified operating voltage is negligible.
The maximum permissible AC operating voltage is used to classify the individual voltage ratings
within the type series.
In most applications the operating voltage is a given parameter, so the varistors in the product ta-
bles are arranged according to maximum permissible operating voltage to facilitate comparison
between the individual varistor sizes.

1.7.2 Surge current, transient

Short-term current flow – especially when caused by overvoltage – is referred to as surge current
or transient.
The maximum surge current that can be handled by a metal oxide varistor depends on amplitude,
pulse duration and number of pulses applied over device lifetime. The ability of a varistor to with-
stand a single pulse of defined shape is characterized by the maximum non-repetitive surge cur-
rent specified in the product tables (single pulse, tr ≤ 20 µs).
If pulses of longer duration or multiple pulses are applied, the surge current must be derated as
described in section 1.8.

Maximum surge current

The maximum non-repetitive surge current is defined by an 8/20 µs waveform (rise time 8 µs/
decay time to half value 20 µs) according to IEC 60060 as shown in figure 16. This waveform ap-
proximates a rectangular wave of 20 µs. The derating curves of the surge current, defined for rec-
tangular waveforms, consequently show a knee between horizontal branch and slope at 20 µs.

1.7.3 Energy absorption

The energy absorption of a varistor is correlated with the surge current by

(equ. 6)

where v (t) is the voltage drop across the varistor during current flow.
Figure 13 in chapter “Application notes” illustrates the electrical performance for the absorption of
100 J in the case of SIOV-S20K14AUTO.

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Maximum energy absorption

Surge currents of relatively long duration are required for testing maximum energy absorption ca-
pability. A rectangular wave of 2 ms according to IEC 60060 (figure 17) is commonly used for this
test.
In the product tables the maximum energy absorption is consequently defined for a surge current
of 2 ms.

TS Rise time in µs
TR Decay time to half value in µs
01 Nominal start
lm Peak value

Frequently used TS/TR ratios:

Surge currents Surge voltages
4/10 µs 1.2/50 µs
8/20 µs 10/700 µs
10/350 µs
10/1000 µs

Figure 16: Waveform to IEC 60060 standard

TD Duration of peak value ( 2 ms)

TT Total duration

Figure 17: Waveform to IEC 60060 standard

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1.7.4 Average power dissipation

If metal oxide varistors are selected in terms of maximum permissible operating voltage, the re-
sulting power dissipation will be negligible.
However, the rated maximum power dissipation must be taken into account if the varistor has not
enough time to cool down between a number of pulses occurring within a specified isolated time
period.
The examples in chapter "Calculation examples" show the calculation of the minimum time inter-
val in periodic application of energy.

1.7.5 Varistor voltage

The varistor voltage is the voltage drop across the varistor when a current of 1 mA is applied to
the device. It has no particular electrophysical significance but is often used as a practical stan-
dard reference in specifying varistors.

1.7.6 Tolerance

Tolerance figures refer to the varistor voltage at 25 °C. As shown in figure 14 the tolerance band
for other current values can be larger.
Note:
When the tolerance is examined, the current of 1 mA must only be applied briefly so that the re-
sults are not corrupted by warming of the varistor (see temperature coefficient). The current
should only flow for 0.2 up to 2.0 s, typical is a duration of 1 s.

1.7.7 Protection level (clamping voltage)

The protection level is the voltage drop across the varistor for surge currents > 1 mA.
The V/I characteristics show the maximum protection level as a function of surge current (8/20 µs
waveform).
In the product tables the protection level for surge currents according to the R10 series (ISO 497)
is additionally specified. This is also referred to as clamping voltage.

1.7.8 Capacitance

The product tables specify typical capacitance figures for 1 kHz.

The tabulated values show that metal oxide varistors behave like capacitors with a ZnO dielectric.
The capacitance rises in proportion to disk area (and thus to current handling capability) and
drops in proportion to the spacing of the electrodes, i.e. it decreases with increasing protection
level.
Capacitance values are not subject to outgoing inspection.

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1.7.9 Response behavior, response time

The response time of metal oxide varistor ceramics to transients is in the subnanosecond region,
i.e. varistors are fast enough to handle even ESD transients with the extreme steep current rise of
up to 50 A/ns.
You can find similar results for the silicon chip used in semiconductor protective devices like sup-
pressor diodes.

However, when the chip is mounted in its package, the response time increases due to the series
inductance of its package to values > 1 ns.
The varistors specified in this data book have response times <25 ns.
Comparing the protection behavior of varistors with semiconductors, higher figures of protection
level may be found for varistors. This cannot be explained by a higher response time of varistors
– which definitely is not true – but rather it is due to slightly less nonlinearity of the V/I characteris-
tics.
The V/I characteristics in this data book have been measured at currents > 1 mA with the stan-
dard 8/20 µs waveform (figure 16). So they allow for the inductive voltage drop across the varistor
for the particular di/dt.
If surge currents with steep edges are to be handled, one should always design the circuit layout
for as low an inductance as possible.

1.7.10 Temperature coefficient

Metal oxide varistors show a negative temperature coefficient of voltage. Figure 18 shows the typ-
ical varistor behavior.
The temperature coefficient value drops markedly with rising currents and is completely negligible
from roughly 1 mA upwards.

Figure 18: Typical temperature dependence of the V/I characteristic taking SIOV-S20K275 as
an example.
(VV = applied DC voltage in percentage of varistor voltage at +25 °C)

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An increase in leakage current is consequently noticeable at higher temperatures, especially in

the µA region.
Equation 7 describes the TC of varistor voltage (at 1 mA):

(equ. 7)
Figure 19 shows results for SIOV-S20K275 as an example.

Figure 19: Temperature coefficient of voltage at 1 mA for SIOV-S20K275

1.8 Derating

Derating is the intentional reduction of maximum ratings in the application of a device. With metal
oxide varistors derating is of particular interest under the following conditions:
Derating for repetitive surge current and energy absorption
Derating at increased operating temperatures

1.8.1 Derating for repetitive surge current

A typical feature of metal oxide varistors is the dependence of the maximum permissible ratings
for surge current, and thus for energy absorption, on the pulse shape, pulse duration, and the
number of times this load is repeated during the overall lifetime of the varistor.
The derating for a particular maximum permissible surge current can be derived from the curves
for a type series in repetition figures graded 10x. The surge derating curve is mainly dependent on
the varistor size but also voltage rating. Such derating curves can be found for all individual varis-
tors in this data book.
The maximum permissible energy absorption can also be calculated from the derating curves by
Wmax = vmax imax tr max

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1.8.2 Derating at increased operating temperatures

For operating temperatures exceeding 85 °C or 125 °C the following operating conditions of varis-
tors have to be derated according to figure 20:
Voltage
Surge current
Energy absorption
Average power dissipation

1.9 Operating and storage temperature

The upper limits of the operating and storage temperature ranges for the individual type series
can be deduced from the 100% and 0% values in figure 20, respectively. For lower ratings, refer
to the product tables.

1.10 Climatic categories

The limit temperatures according to IEC 60068 are stated in the product tables as LCT (lower cat-
egory temperature) and UCT (upper category temperature).

Derating curve 1 Derating curve 2 Derating curve 3

SIOV- SIOV- SIOV-
B S...(AUTO)(E2)(E3) S...AUTOD1
LS Q
ETFV types
SFS types

Figure 20: Temperature derating for operating voltage, surge current,

energy absorption and average power dissipation

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1.11 Overload response

1.11.1 Moderate overload

Surge currents or continuous overload of up to approx. one and a half times the specified figures
can lead to a change in varistor voltage by more than ±10%. In most cases the varistor will not be
destroyed, but there may be an irreversible change in its electrical properties. The thermal fuse in
EPCOS ETFV may open in such a condition.

1.11.2 Heavy overload

Surge currents far beyond the specified ratings will puncture the varistor element. In extreme cas-
es the varistor will burst.
Excessive steady-state overload fuses the ZnO grains and conducting paths are formed with the
bulk resistance of ZnO, which is considerably lower than the resistance of the original varistor.
The overload can overheat the varistor ceramic with the result that it becomes unsoldered from
the electrodes.

1.12 Design notes

If steep surge current edges are to be expected, you must make sure that your design is as low
inductive as possible (cf 1.7.9).

1.12.1 Physical protection, fuses

Due to the unpredictable nature of transients a varistor may be overloaded although it was care-
fully selected. Overload may result in package rupture and expulsion of hot material. For this rea-
son the varistor should be physically shielded from adjacent components, e.g. by a suitable metal
case.
Fuse protection of varistors against excessive surge current is usually not possible because stan-
dard fuses are unable to quench surge currents. But fuses can offer protection against damage
caused by follow-on currents. Such follow-on currents flow when a damaged varistor is in low re-
sistance mode and still connected to power.
When varistors are operated on standard line impedances, nominal fuse currents and varistor
type series should be matched as follows:
Type S05 S07 S10 S14/ S20/ S25/
SFS14 Q14 Q20
Nominal fuse current [A] ≤1 ≤3 ≤6 ≤10 ≤16 ≤25

Type ETFV14 ETFV20 ETFV25

Nominal fuse current [A] ≤10 ≤16 ≤25

Type B32 B40/LS40/ B60/LS50 B80

LS41/LS42
Nominal fuse current [A] ≤50 ≤80 ≤125 ≤160

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In applications where the conditions deviate from standard power line impedances, better fuse
protection of the varistor can be obtained using thermo-fuses. These thermo- fuses should be in
direct thermal contact with the varistor. Better protection can be achieved with a thermal fuse or
EPCOS ThermoFuse varistors series ETFV where the thermal coupling is matched with the varis-
tors.

1.12.2 Potting and sealing, adhesion

Potting, sealing or adhesive compounds can produce chemical reactions in the varistor ceramic
that will degrade its electrical characteristics. Information about this is available on inquiry.

1.12.3 Prior damage

The values specified only apply to varistors that have not been subjected to prior electrical, me-
chanical or thermal damage.

1.12.4 Environmental conditions

SIOV varistors are designed for indoor applications. On all accounts, prevent exposure to:
Direct sunlight
Rain or condensation
Steam, saline spray
Corrosive gases
Atmospheres with reduced oxygen content

1.12.5 Mechanical strength of wire leads of disk-type varistors

The wire leads comply with the requirements of IEC 60068-2-2. They may only be bent at a mini-
mum distance of 4 mm from the enamel coating end. When bending leads to shape, the lead-
component junction must be supported. The minimum bend radius should be 0.75 mm.

1.13 Designation system

Varistor = variable resistor
SIOV ® = registered tradename for EPCOS varistors

Table 1
Rated Max. AC Additional Additional
SIOV Design Tolerance
dimension oper. volt. specifications specifications

Design B Block type (HighE series)

ETFV Disk type in housing (ThermoFuse)
LS ... P Strap type, round, epoxy coating, bent straps (HighE series)
LS ... PK2 Strap type, round, epoxy coating, straight straps (HighE series)
LS ... QP Strap type, square, epoxy coating, bent straps (HighE series)

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Table 1 (continued)

Design LS ... QPK2 Strap type, square, epoxy coating, straight straps (HighE series)
Q Disk type, square, leaded (EnergetiQ series)
S Disk type, round, leaded
SFS Disk type in housing

Rated diameters/length of disk varistors 5 up to 80 mm.

Tolerance of K ±10%
varistor voltage L ±15%
(1 mA) M ±20%
S...A/B/C Special tolerance A, B, or C
Max. 11 ... 1100 VRMS, max
permissible
AC operating
voltage
Taping G Tape / reel
GA Tape / Ammo pack
G.S. Tape / reel, crimp style S, S2, S3, S4, S5
(see chapter “Taping, packaging and lead configuration”)
Appendix AUTO Additional load dump and jump start specification
AUTO ... D1 Additional load dump, jump start and high-temperature
specification
E2 AdvanceD series
E3 SuperioR series
E4 SuperioR series
K1 Multiple pulse (MP) series
K2 Suffix to define modifications
M Customer specific trimmed lead length (in mm)
P Standard coating (epoxy)
Q Square shape
R5 = 5.0 mm, lead spacing differs from standard
R7 = 7.5 mm, lead spacing differs from standard
Production code: all coated varistors are marked with year/week code.
Example: 07 09 = 9th week of year 2007

MOV metal oxide varistor

ZnO zinc oxide varistor
VDR voltage-dependent resistor
Abbreviation for overvoltage protection elements in general:
TVSS transient voltage surge suppressor

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1.14 Marking of disk varistors

Disk-type varistors have printed markings as shown in figure 21. They are distinguished as fol-
lows:
no underline under the “S”: S (Standard)
an additional underline under the “S”: S... (for type series AdvanceD, E2)
or a line above the “S”: S... (for type series SuperioR, E3)
or a line above and under the “S”: S... (for SuperioR types, E4)

The lower section of the marking area contains the date code yy ww.

Figure 21: Various forms of printed markings of disk-type varistor series StandarD, AdvanceD
and SuperioR, using S14K275, S20K275 and S25K275 as an example.

Date code 10 27  yy ww  27th week of year 2010

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