2N2905A

2N2907A

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.

2N2905A approved to CECC 50002-100,

2N2906A approved to CECC 50002-103
available on request.
TO-18 TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CBO Collector-Base Voltage (IE = 0) -60 V
V CEO Collector-Emitter Voltage (I B = 0) -60 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -0.6 A
o
P t ot Total Dissipation at T amb ≤ 25 C
for 2N2905A 0.6 W
for 2N2907A 0.4 W
at T case ≤ 25 o C
for 2N2905A 3 W
for 2N2907A 1.8 W
o
T stg St orage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C

November 1997 1/7

2N2905A/2N2907A

THERMAL DATA
T O-39 TO -18
o
R t hj-ca se Thermal Resistance Junction-Case Max 58.3 97.3 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 292 437.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = -50 V -10 nA
o
Current (IE = 0) V CB = -50 V Tc ase = 150 C -10 µA
I CEX Collector Cut-off V CE = -30 V -50 nA
Current (V BE = -0.5V)
I BEX Base Cut-off Current V CE = -30 V -50 nA
(V BE = -0.5V)
V ( BR)CBO ∗ Collector-Base I C = -10 µA -60 V
Breakdown Voltage
(I E = 0)
V ( BR)CEO ∗ Collector-Emitter I C = -10 mA -60 V
Breakdown Voltage
(I B = 0)
V (BR)EBO ∗ Emitter-Base I E = -10 µA -5 V
Breakdown Voltage
(I C = 0)
V CE(sat )∗ Collector-Emitter I C = -150 mA IB = -15 mA -0.4 V
Saturation Voltage I C = -500 mA IB = -50 mA -1.6 V
V BE(s at)∗ Base-Emitter I C = -150 mA IB = -15 mA -1.3 V
Saturation Voltage I C = -500 mA IB = -50 mA -2.6 V
hFE∗ DC Current G ain IC = -0.1 mA V CE = -10 V 75
IC = -1 mA V CE = -10 V 100
IC = -10 mA V CE = -10 V 100
IC = -150 mA V CE = -10 V 100 300
IC = -500 mA V CE = -10 V 50
fT Transition F requency V CE = -50 V f = 100 MHz 200 MHz
I C = -20 mA
C EBO Emitter Base IC = 0 V EB = -2 V f = 1MHz 30 pF
Capacitance
C CBO Collector Base IE = 0 V CB = -10 V f = 1MHz 8 pF
Capacitance
t d ∗∗ Delay Time V CC = -30 V I C = -150 mA 10 ns
I B1 = -15 mA
t r ∗∗ Rise Time V CC = -30 V I C = -150 mA 40 ns
I B1 = -15 mA
t s∗∗ Storage Time V CC = -6 V I C = -150 mA 80 ns
I B1 = -IB2 = -15 mA
t f ∗∗ Fall T ime V CC = -6 V I C = -150 mA 30 ns
I B1 = -IB2 = -15 mA
t on∗∗ Turn-on T ime V CC = -30 V I C = -150 mA 45 ns
I B1 = -15 mA
t off ∗∗ Turn-off T ime V CC = -6 V I C = -150 mA 100 ns
I B1 = -IB2 = -15 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit

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 2N2905A/2N2907A

Normalized DC Current Gain. Collector-emitter Saturation Voltage.

Collector-base and Emitter-base capacitances. Switching Characteristics.

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2N2905A/2N2907A

Test Circuit for ton, tr, td.

PULSE GENERATOR : TO OSCILLOSCOPE :

tr ≤ 2.0 ms tr < 5.0 ns
Frequency = 150 Hz ZIN > 10 MΩ
Zo = 50 Ω

Test Circuit for toff, to, tf.

PULSE GENERATOR : TO OSCILLOSCOPE :

tr ≤ 2.0 ns tr < 5.0 ns
Frequency = 150 Hz ZIN > 100 MΩ
Zo = 50 Ω

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 2N2905A/2N2907A

TO-18 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 5.3 0.208

E 4.9 0.193

F 5.8 0.228

G 2.54 0.100

H 1.2 0.047

I 1.16 0.045

L 45o 45o

D A
G

I
H
E
F

L
B

0016043

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2N2905A/2N2907A

TO-39 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

L 45o (typ.)

D A
G

I
H
E
F

L
B

P008B

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 2N2905A/2N2907A

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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