MARCH 19, 2024

RESEARCH
WORK
for MIDTERM

By: Lance Lee Seguisabal

 BJT-Bipolar Junction Transistor

Three-terminal semiconductors known as bipolar junction transistors (BJTs) are useful for a variety
of electrical applications, including switches and amplifiers. The output (collector) current, output
voltage, and input (base) current of a BJT are commonly used to characterize its properties. Here is
a quick summary of the salient features:

Characteristic of Input:

The voltage between the base and emitter terminals is known as the base-emitter voltage, or VBE.
The quantity of base current (IB) that flows into the base terminal is determined by this voltage.
Characteristics of Output:

The current passing through the collector terminal is known as the collector current (IC). The
properties of the transistor and the base current govern this current.
The voltage between the emitter and collector terminals is known as the collector-emitter voltage,
or VCE. It is impacted by the load attached to the collector and has an impact on the collector
current.

The dynamic resistance observed at the collector terminal, known as the output resistance (r_o), is
dependent on the biasing circumstances and collector current.
Gain in DC Current (β):

Under the given circumstances, this is the collector current (IC) to base current (IB) ratio. It's a
crucial parameter since it establishes the transistor's capacity for amplification.
Cut-off and Saturation:

Saturation Region: Regardless of the base current, the BJT permits the maximum collector current
to flow when it is in this state. Both base-collector and base-emitter junctions are forward biased in
this area.
Cut-off Region: The transistor is in the cut-off state when there is no base current flowing, and no
collector current flows. In this state, both junctions are reverse biased.
AC Parameters:
Transconductance: Measures how effectively the BJT converts
variations in the base-emitter voltage to changes in the collector
current, while keeping the collector-emitter voltage constant.
Output Conductance: Represents the change in collector-emitter
voltage in response to changes in collector current, with the
base-emitter voltage held constant.
Hybrid-π Model Parameters: In the small-signal hybrid-π model,
the BJT is depicted by resistors and small-signal current sources.
AC Current Gain: Reflects the ratio of the change in collector
current to the change in base current under small-signal
conditions.
Unity-Gain Frequency: Also called the transition frequency (fT), it
indicates the frequency at which the transistor's current gain
reaches unity, beyond which the gain starts declining. It's vital for
designing high-frequency amplifiers.

DC Parameters:
Forward Current Gain: Indicates the ratio of collector current to
base current in the forward-active region.
Collector Current (IC): The current flowing through the collector
terminal when the transistor is appropriately biased in the active
region.
Base Current: The current flowing into the base terminal to
regulate the collector current, usually significantly smaller than
the collector current.
Emitter Current: The sum of collector and base currents.
Collector-Emitter Saturation Voltage: The voltage drop across the
collector and emitter when the transistor is in saturation mode,
typically observed in switch applications, and is usually a few
hundred millivolts.
Collector-Emitter Breakdown Voltage: The maximum voltage that
can be applied between the collector and emitter terminals in the
reverse direction without causing damage to the transistor.
 2 TYPES OF BJT

1. NPN Transistor:
In an NPN transistor, there are two layers of n-type semiconductor material
sandwiched between a layer of p-type semiconductor material.
The majority carriers in the emitter and collector regions are electrons, while
the base region is doped with holes.
When a small current flows into the base terminal (p-region), it allows a much
larger current to flow from the collector to the emitter (both n-regions),
making it an amplifier or switch.
2. PNP Transistor:
In a PNP transistor, there are two layers of p-type semiconductor material
sandwiched between a layer of n-type semiconductor material.
The majority carriers in the emitter and collector regions are holes, while the
base region is doped with electrons.
When a small current flows out of the base terminal (n-region), it allows a much
larger current to flow from the emitter to the collector (both p-regions), again
enabling amplification or switching.
Both NPN and PNP transistors serve similar functions but with opposite polarities.
NPN transistors are more commonly used in electronic circuits due to their better
performance characteristics and ease of manufacturing. However, PNP transistors
have their applications, especially in specialized circuit designs.
 BJT CONFIGURATION

1. Common Emitter (CE) Configuration:

The common emitter configuration is the most widely used configuration for
amplifier circuits.
In this configuration, the emitter terminal is common between the input and
output circuits, while the collector is the output and the base is the input.
It offers high voltage gain, moderate input impedance, and high output
impedance.
2. Common Collector (CC) Configuration (also known as the Emitter
Follower):
In the common collector configuration, the collector terminal is common
between the input and output circuits, while the emitter is the input and the
base is the output.
It provides unity voltage gain but offers high current gain and low output
impedance.
Commonly used as a voltage buffer or impedance matching circuit.
3. Common Base (CB) Configuration:
In the common base configuration, the base terminal is common between the
input and output circuits, while the collector is the input and the emitter is the
output.
It offers low input impedance, high voltage gain, and moderate output
impedance.
Commonly used in RF (Radio Frequency) amplifier circuits due to its wide
bandwidth.
Each configuration has its own set of characteristics and applications, and the choice
depends on the specific requirements of the circuit design.
AC transformation involves the following steps:
1. Establishing the DC Operating Point: This entails calculating the DC
biasing conditions, including voltages and currents at each terminal
(collector, base, and emitter).
2. Small-Signal AC Analysis: Introducing small variations to the DC values of
voltages and currents to represent AC signals superimposed on the DC
bias.
3. Linearizing the Transistor Equations: Approximating the nonlinear
equations around the DC operating point by taking derivatives with
respect to small-signal variations, treating them as linear.
4. Applying the Small-Signal Model: Substituting the nonlinear transistor
with its small-signal equivalent model, typically the hybrid model
containing resistors and controlled current sources.
5. Determining Small-Signal Parameters: Evaluating parameters like
transconductance, output conductance, and capacitances specific to
the small-signal behavior of the transistor.
6. Analyzing the AC Circuit: Utilizing standard linear circuit techniques such
as nodal or mesh analysis to examine the AC behavior of the circuit.