A Closer Look at
Recent DRAM Releases
A
August
t 2011
DRAM M
Market
k tGGrowth
th
• Smartphone and tablet markets continue to grow at
an approximate rate of 10% a year and demand for
DRAM memory has matched that growth.
• Global DRAM sales volume to increase at a rate of
12.3% annually through to 2020. *source: GBI Research
• Mobile DRAM shipments
p estimated to reach all-time
high in 2010 of 1.87 billion units shipped *source: DRAMeXchange
2
L
Low Power
P DDR2 SDRAM
El id B4064B2PF L
Elpida Low P
Power DDR2 SDRAM
• Found within the iPad 2 in a package-on-package with the
Apple A5 processor.
• Identified by ‘B240ABB’ die marking
• 2Gb LPDDR2 SDRAM manufactured at the 44nm process
node
Available reports:
• Memory Detailed Structural Analysis of the Elpida B240ABB
44nm 2Gbit LPDDR2 SDRAM die found in the Apple A5 PoP
• CircuitVision Analysis
y of the Elpida
p B240ABB 44nm 2Gbit
LPDDR2 SDRAM die found in the Apple A5 PoP
• IC Review of the Elpida B4064B2PF-8D F DRAM Memory to
A5 Processor
4 I DRAM Update August 2011 4
I
Images El id B4064B2PF 2Gb LPDDR2 SDRAM
off Elpida
Die area – 52.5 mm2
SEM Cross-section
Die marking
5 I DRAM Update August 2011
H i H5LR2G23M L
Hynix Low P
Power DDR2 SDRAM
• Found within an LG handset in a package-on-package (PoP)
with the Nvidea Tegra 2 processor.
• Identified by ‘H5LR2G23M’ die marking
• 2Gb LPDDR2 SDRAM manufactured at the 44nm process
node
Available reports:
• IC Review of the Hynix H5LR2G23M LPDDR2
SDRAM
• Further
F th analysis
l i available
il bl on requestt
6 I DRAM Update August 2011 6
I
Images off Hynix
H i H5LR2G23M 2Gb LPDDR2 SDRAM
Die area (partial photo) – 70.6 mm2
SEM Cross-section
Die marking
7 I DRAM Update August 2011
Micron MT42L64M32D1KL Low Power DDR2
SDRAM
• Used in a package-on-package (PoP) orientation.
• Identified by ‘G59A’ die marking
• 2Gb LPDDR2 SDRAM manufactured at the 50nm process
node
Available reports:
• IC Review of the Micron MT42L64M32D1KL
LPDDR2 SDRAM
• Further analysis available on request
8 I DRAM Update August 2011 8
Images of Micron MT42L64M32D1KL 2Gb LPDDR2 SDRAM
Die area – 94.5 mm2
SEM Cross-section
Die mark
9 I DRAM Update August 2011
S
Samsung K4P2G324EC L
Low P
Power DDR2 SDRAM
• Found in a package-on-package (PoP) with the A5 processor of
the iPad 2.
• Identified by ‘K4P2G324EC’ die marking
• 2Gb LPDDR2 SDRAM manufactured at the 40nm-class
process node
Available reports:
• IC Review of the Samsung K4P2G324EC LPDDR2
SDRAM
• Further
F th analysis
l i available
il bl on requestt
10 I DRAM Update August 2011 10
S
Samsung K4P2G324EC 2Gb LPDDR2 SDRAM
Die area – 61 mm2
SEM Cross-section
Die marking
11 I DRAM Update August 2011
S
Samsung K3PE7E700B L
Low P
Power DDR2 SDRAM
• Found in a package-on-package (PoP) with the Exynos
processor from Samsung’s new Galaxy phones.
• Identified by ‘4G-B-MP’ die marking
• 4Gb LPDDR2 SDRAM manufactured at the 30nm-class
process node
Available reports:
• IC Review of the Samsung K3PE7E700B LPDDR2
SDRAM
• CircuitVision
Ci itVi i A Analysis
l i on ththe S
Samsung 30
30nm-class
l
4Gbit LPDDR2 SDRAM – Available Nov 2011
• Further analysis available on request
12 I DRAM Update August 2011 12
S
Samsung K3PE7E700B 4Gb LPDDR2 SDRAM
Die area – 77 mm2
SEM Cross-section
Die marking
13 I DRAM Update August 2011
DDR3 SDRAM
S
Samsung K4B2G0846D DDR3 SDRAM
• Located on DDR3 DIMM module.
• Identified by ‘K4B2G0846D’ die marking
• 2Gb DDR3 SDRAM manufactured at the 30nm-class process
node
Available reports:
• IC Review of the Samsung K4B2G0846D DDR3
SDRAM
• CircuitVision Analysis on the Samsung
K4B2G0846D 30nm-class 2Gbit DDR3 SDRAM
• Memory Detailed Structural Analysis on the
Samsung K4B2G0846D 30nm-class
30nm class 2Gbit DDR3
DRAM
15 I DRAM Update August 2011 15
S
Samsung K4B2G0846D 2Gb DDR3 SDRAM
Die area – 36 mm2
SEM Cross-section
Die marking
16 I DRAM Update August 2011
H i H5TQ2G83BFR DDR3 SDRAM
Hynix
• Located on DDR3 DIMM module.
• Identified by ‘H5TQ2G44B’ die marking
• 2Gb DDR3 SDRAM manufactured at the 44nm process node
Available reports:
• Memory Detailed Structural Analysis of the Hynix
H5TQ2G83BFR 44nm 2Gbit DDR3 SDRAM
• CircuitVision Analysis of All the Circuitry on the
Hynix H5TQ2G83BFR 44nm 2Gb DDR3 SDRAM
• Engineering Report on the select areas of the
Memory Detailed Structural Analysis of the Hynix
44nm 2Gbit DDR3 SDRAM
17 I DRAM Update August 2011 17
H i H5TQ2G83BFR 2Gb DDR3 SDRAM
Hynix
Die area – 60 mm2
SEM Cross-section
Die marking
18 I DRAM Update August 2011
El id J2108BCSE DDR3 SDRAM
Elpida
• Located on DDR3 DIMM module.
• Identified by ‘J2108BC’ die marking
• 2Gb DDR3 SDRAM manufactured at the 44nm process node
Available reports:
• IC Review of the Elpida J2108BCSE-DJ-F DDR3
• Further
F th analysis
l i available
il bl upon requestt
19 I DRAM Update August 2011 19
El id J2108BCSE 2Gb DDR3 SDRAM
Elpida
Die area – 51.6 mm2
SEM Cross-section
Die marking
20 I DRAM Update August 2011
In Summary
Manufacturer Product Code Density Product Process node Chip size [mm2]
Samsung K3PE7E700B 4096 M LPDDR2 35 nm 78.0
Hynix H5LR2G23M 2048 M LPDDR2 44 nm 70.6
Samsung K4P2G324EC 2048 M LPDDR2 46 nm 61.0
Elpida B240AB 2048 M LPDDR2 45 nm 52.5
Elpida B2432BA 2048 M LPDDR2 54 nm 91.0
Micron MT42L128M32D2KL 2048 M LPDDR2 50 nm 93.1
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If you are interested in finding out more
about UBM TechInsights’
TechInsights library of
DRAM reports and upcoming analyses,
please contact:
Cindy Lin, Director of Sales
T: 886 2 77072799
E: [email protected]
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