STPS30L30C

Low drop power Schottky rectifier

Features A1
■ Very small conduction losses
K
■ Negligible switching losses
A2
■ Extremely fast switching
K K
■ Low forward voltage drop
■ Low thermal resistance
A2 A2
■ Avalanche capability specified
A1 K A1
Description TO-220AB D2PAK
This dual center tap Schottky rectifier is suited for STPS30L30CT STPS30L30CG
switch mode power supplies and high frequency
DC to DC converters.
Packaged in TO-220AB, D2PAK and I2PAK, this A2
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity A1
K
protection applications. I2PAK
STPS30L30CR
Table 1. Device summary
IF(AV) 2 x 15 A
Figure 1. Electrical characteristics (a)
VRRM 30 V
I
Tj (max) 150 °C V
"Forward"
VF(typ) 0.37 V I
2 x IO X

IF
IO X
VRRM
VAR VR
V
IR

VTo VF(Io) VF VF(2xIo)

"Reverse"

IAR

a. VARM and IARM must respect the reverse safe

operating area defined in Figure 12 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics

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Characteristics STPS30L30C

1 Characteristics

Table 2. Absolute ratings (limiting values per diode)

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IF(RMS) Forward rms current 30 A
Per diode 15
IF(AV) Average forward current δ = 0.5 Tc = 140 °C, A
Per device 30
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, 220 A
IRRM Peak repetitive reverse current tp = 2 µs square, F= 1 kHz square 1 A
IRSM Non repetitive peak reverse current tp = 100 µs square 3 A
(1)
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 5300 W
Maximum repetitive peak avalanche tp < 1 µs Tj < 150 °C
VARM (2) 45 V
voltage IAR < 35 A
Maximum single pulse peak tp < 1 µs Tj < 150 °C
VASM (2) 45 V
avalanche voltage IAR < 35 A
Tstg Storage temperature range -65 to + 175 °C
Tj Maximum operating junction temperature (3) 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3.
dPtot
---------------
dTj
< -------------------------
1
Rth ( j – a )
- condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance(1)

Symbol Parameter Value Unit
Per diode 1.5
Rth(j-c) Junction to case
Total 0.8 °C/W
Rth(c) Coupling 0.1
1. When the diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C 1.5 mA
IR(1) Reverse leakage current VR = VRRM
Tj = 125 °C 170 350 mA
Tj = 25 °C 0.46
IF = 15 A
Tj = 125 °C 0.33 0.37
VF(1) Forward voltage drop V
Tj = 25 °C 0.57
IF = 30A
Tj = 125 °C 0.43 0.5
1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.24 x IF(AV) + 0.009 x IF2(RMS)

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STPS30L30C Characteristics

Figure 2. Average forward power dissipation Figure 3. Average forward current per diode
versus average forward current versus ambient temperature
(per diode) (δ = 0.5)

PF(av)(W) IF(av)(A)
10 16
9 14 Rth(j-a)=Rth(j-c)
δ = 0.1 δ = 0.2 δ = 0.5
8 δ = 0.05 12
7 Rth(j-a)=15°C/W

6 10
δ=1
5 8 Rth(j-a)=50°C/W
4
6
3 T T
2 4
1 IF(av) (A) 2 Tamb(°C)
δ=tp/T tp δ=tp/T tp
0 0
0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150

Figure 4. Normalized avalanche power Figure 5. Normalized avalanche power

derating versus pulse duration derating versus junction
temperature
P ARM (t p )
P ARM (T j )
P ARM (1µs)
1 P ARM (25°C)
1.2

0.1 0.8

0.6

0.01 0.4

0.2
T j (°C)
t p (µs)
0.001 0
25 50 75 100 125 150
0.01 0.1 1 10 100 1000

Figure 6. Non repetitive surge peak forward Figure 7. Relative variation of thermal
current versus overload duration, impedance junction to case
(maximum values per diode) versus pulse duration

IM(A) Zth(j-c)/Rth(j-c)
250 1.0
225
200 0.8
175
150 0.6 δ = 0.5
Tc=25°C
125
Tc=75°C
100 0.4
Tc=110°C δ = 0.2
75 T
δ = 0.1
50 IM 0.2
25 t
δ=0.5
t(s) tp(s) δ=tp/T tp
Single pulse
0 0.0
1E-3 1E-2 1E-1 1E+0 1E-4 1E-3 1E-2 1E-1 1E+0

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Characteristics STPS30L30C

Figure 8. Reverse leakage current versus Figure 9. Junction capacitance versus

reverse voltage applied (typical reverse voltage applied
values per diode) (typical values per diode)
IR(mA) C(nF)
1E+3 5.0
Tj=150°C
F=1MHz
Tj=25°C
1E+2
Tj=125°C

1E+1 1.0

1E+0
Tj=25°C
1E-1
VR(V) VR(V)
1E-2 0.1
0 5 10 15 20 25 30 1 2 5 10 20 50

Figure 10. Forward voltage drop versus Figure 11. Thermal resistance junction to
forward current (maximum values ambient versus copper surface
per diode) under tab
IFM(A) Rth(j-a) (°C/W)
200 80
Epoxy printed circuit board, D2PAK
100 70 copper thickness = 35 µm
Tj=15 0 °C
(typical values) 60
50
Tj=12 5 °C 40
10
30
Tj=25 °C
20
10
VFM(V) S(Cu) (cm²)
1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 24 28 32 36 40

Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)

Iarm (A)
55
50
45 Forbidden area
40
35
30
Operating area
25 Varm (V)
20
30 35 40 45 50 55 60

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STPS30L30C Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)
● Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Table 5. TO-220AB dimensions

Dimensions

Ref. Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051
H2 A
D 2.40 2.72 0.094 0.107
Dia C
E 0.49 0.70 0.019 0.027
L5
L7 F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
L6
F2 1.14 1.70 0.044 0.066
L2
F2 G 4.95 5.15 0.194 0.202
D
F1 L9 G1 2.40 2.70 0.094 0.106

L4
H2 10 10.40 0.393 0.409
F L2 16.4 typ. 0.645 typ.
M L4 13 14 0.511 0.551
G1 E
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151

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Package information STPS30L30C

Mounting (soldering) the I2PAK metal slug (heatsink) with alloy, like a surface mount device,
IS NOT PERMITTED. A standard through-hole mounting is mandatory.

Table 6. I2PAK dimensions

Dimensions

Ref. Millimeters Inches

Min. Max. Min. Max.

A

E
A 4.40 4.60 0.173 0.181
c2
L2 A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.035

D b1 1.14 1.70 0.044 0.067

c 0.49 0.70 0.019 0.028

L1 A1 c2 1.23 1.32 0.048 0.052

b1
D 8.95 9.35 0.352 0.368
L
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.195 0.203
b c
E 10 10.40 0.394 0.409
e
e1 L 13 14 0.512 0.551
L1 3.50 3.93 0.138 0.155
L2 1.27 1.40 0.050 0.055

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STPS30L30C Package information

Table 7. D2PAK dimensions

Dimensions

Ref. Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A

E
A1 2.49 2.69 0.098 0.106
C2
L2
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
L
B2 1.14 1.70 0.045 0.067

L3 C 0.45 0.60 0.017 0.024

A1
C2 1.23 1.36 0.048 0.054
B2
C R
B D 8.95 9.35 0.352 0.368

G E 10.00 10.40 0.393 0.409

A2
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
M
* L2 1.27 1.40 0.050 0.055
V2

L3 1.40 1.75 0.055 0.069

* FLAT ZONE NO LESS THAN 2mm
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°

Figure 13. D2PAK footprint (dimensions in mm)

16.90

10.30 5.08

1.30

3.70
8.90

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Ordering information STPS30L30C

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS30L30CT STPS30L30CT TO-220AB 2.0 g 50 Tube

2
STPS30L30CG STPS30L30CR D PAK 1.8 g 50 Tube
2
STPS30L30CG-TR STPS30L30CG D PAK 1.8 g 1000 Tape and reel
STPS30L30CG-TR STPS30L30CG I2PAK 1.49 g 50 Tube

4 Revision history

Table 9. Document revision history

Date Revision Changes

Jul-2003 5C Previous issue

Added Figure 1 and Figure 12. Added parameters VARM and VASM
29-Apr-2010 6
to Table 2.

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STPS30L30C

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