Types of biasing
Fixed bias Self bias Voltage divider bias
VGS = −VGG VGS = −IDRS VGS = VG − IDRS
VGS = −(IDRS ) + x
VDS = VDD − IDRD VDS = VDD − ID(RD + RS ) VDS = VDD − ID(RD + RS )
VG = VGS VG = 0
R2
VG = VDD
R1 + R2
VD = VDS VD = VDD − IDRD VD = VDD − IDRD
VS = 0 VS = IDRS VS = IDRS
ID using Shockley's eqn ID using Shockley's eqn by
VDD
replacing V GS IR
1
= IR
2
=
R1 + R2
Feedback bias E-MOSFET
VD = VG
VGS = VDD − IDRD
VDS = VGS
VD = VDD − IDRD
VS = IDRS
For all FETs:
IG = 0A, ID = IS
For JFETs and Depletion-Type MOSFETs:
2
VGS
ID = IDSS (1 − )
VP
For Enhancement-Type MOSFETs:
2
ID = k(VGS − VT )
2
k = A/V
Output characteristics
cha JFET D-MOSFET E-MOSFET
JFET
VDS > Vp → Ohmic region (Acts as a resistor)
VDS ≥ Vp → Saturation region (Constant drain current)
VGS = Vp → Cut off region (No drain current/off)
D-MOSFET
When D-MOSFET operates in depletion mode, it acts like JFET
If the polarity of V is switched for a specific D-MOSFET it will operate in the
GS
enhancement mode.
In enhancement mode it will provide current more than I DSS
E-MOSFET
VDS < VGS − VT & VDS > VT → Ohmic region (Acts as a resistor)
VDS < VGS − VT Saturation region (Constant drain current)
VGS < VT → Cut off region (No drain current/off)
Polarity of V GS
JFET D-MOSFET E-MOSFET
n-channel negative negative positive
p-channel positive positive negative
The polarity of V
DS is always opposite of VGS