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Types of Biasing in FETs Explained

The document outlines various types of biasing methods for FETs, including fixed bias, self bias, and voltage divider bias, along with their respective equations for VGS, VDS, VG, and VS. It also describes the output characteristics of JFETs, D-MOSFETs, and E-MOSFETs, detailing their operational regions such as ohmic, saturation, and cutoff. Additionally, it highlights the polarity relationships between VGS and VDS for different types of FETs.

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Sakib Sadman
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0% found this document useful (0 votes)
31 views4 pages

Types of Biasing in FETs Explained

The document outlines various types of biasing methods for FETs, including fixed bias, self bias, and voltage divider bias, along with their respective equations for VGS, VDS, VG, and VS. It also describes the output characteristics of JFETs, D-MOSFETs, and E-MOSFETs, detailing their operational regions such as ohmic, saturation, and cutoff. Additionally, it highlights the polarity relationships between VGS and VDS for different types of FETs.

Uploaded by

Sakib Sadman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Types of biasing

Fixed bias Self bias Voltage divider bias


VGS = −VGG VGS = −IDRS VGS = VG − IDRS

VGS = −(IDRS ) + x

VDS = VDD − IDRD VDS = VDD − ID(RD + RS ) VDS = VDD − ID(RD + RS )

VG = VGS VG = 0
R2
VG = VDD
R1 + R2

VD = VDS VD = VDD − IDRD VD = VDD − IDRD

VS = 0 VS = IDRS VS = IDRS

ID using Shockley's eqn ID using Shockley's eqn by


VDD
replacing V GS IR
1
= IR
2
=
R1 + R2
Feedback bias E-MOSFET

VD = VG

VGS = VDD − IDRD

VDS = VGS

VD = VDD − IDRD

VS = IDRS

For all FETs:

IG = 0A, ID = IS

For JFETs and Depletion-Type MOSFETs:


2
VGS
ID = IDSS (1 − )
VP

For Enhancement-Type MOSFETs:


2
ID = k(VGS − VT )

2
k = A/V
Output characteristics
cha JFET D-MOSFET E-MOSFET

JFET

VDS > Vp → Ohmic region (Acts as a resistor)


VDS ≥ Vp → Saturation region (Constant drain current)
VGS = Vp → Cut off region (No drain current/off)

D-MOSFET

When D-MOSFET operates in depletion mode, it acts like JFET


If the polarity of V is switched for a specific D-MOSFET it will operate in the
GS

enhancement mode.
In enhancement mode it will provide current more than I DSS

E-MOSFET

VDS < VGS − VT & VDS > VT → Ohmic region (Acts as a resistor)
VDS < VGS − VT Saturation region (Constant drain current)
VGS < VT → Cut off region (No drain current/off)
Polarity of V GS

JFET D-MOSFET E-MOSFET


n-channel negative negative positive
p-channel positive positive negative

The polarity of V
DS is always opposite of VGS

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