产品规格书
DP3080（TO-252）
Datasheet of DP3080（TO-252）
18033419374
QQ 2171689052
深圳市德普微电子有限公司
Shenzhen Developer Microelectronics Co.,Ltd.
地址：深圳市南山区高新南四道创维半导体设计大厦西座707-710单元
Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,
The 4th on High-tech Zone, Nanshan District, Shenzhen
18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
Features Product Summary
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance RDS(on) Vds 30V
• Excellent QgxRDS(on) product(FOM) ID 80A
• Qualified according to JEDEC criteria RDS(ON) typ(at VGS = 10V) 3.9mΩ
RDS(ON) typ(at VGS = 4.5V) 5.5mΩ
Applications
• Motor control and drive
• Battery management 100% DVDS Tested
• UPS (Uninterrupible Power Supplies) 100% Avalanche Tested
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol P-Channel Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 80 A
Drain Current-Continuous(T=100℃) ID (100℃) 61 A
Pulsed drain current (TC = 25°C, tp ID pulse
320 A
limited by Tjmax)
Avalanche energy, single pulse EAS
48 mJ
(L=0.3mH, Rg=25Ω)
Ptot
Power dissipation (TC = 25°C) 75 W
Operating junction and storage Tj , T stg -55 To 150 °C
temperature
Thermal Resistance
Parameter Symbol Max Unit
Thermal resistance, junction – case. RthJC 1.66
℃/W
Thermal resistance, junction –ambient(min. footprint) RthJA 106
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=30V VGS=0V - 0.01 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - ±5 ±100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.8 1.3 1.8 V
RDS(ON) VGS=10V, ID=40A - 3.9 5.5
Drain-Source On-State Resistance mΩ
VGS=4.5V, ID=25A - 5.4 6.5
Forward Transconductance gFS VDS=5V,ID=40A - 90 - S
Dynamic Characteristics b
Input Capacitance Clss - 2165 -
VGS=0V, VDS=15V,
Output Capacitance Coss f=1MHz - 278 - pF
Reverse Transfer Capacitance Crss - 210 -
Switching Characteristics b
Turn-on Delay Time td(on) - 7.6 - nS
Turn-on Rise Time tr VGS=10V, VDD=15V, - 80 - nS
RG_ext=2.7Ω, ID=40A,
Turn-Off Delay Time td(off) - 46 - nS
Turn-Off Fall Time tf - 91 - nS
Total Gate Charge Qg - 48 - nC
VGS=10V, VDS=15V,
Gate-Source Charge Qgs ID=40A, f=1MHz - 9 - nC
Gate-Drain Charge Qgd - 11 - nC
Gate resistance RG VGS=0V, VDS=0V,f=1MHz 2.4 Ω
Body Diode Characteristic
Parameter Symbol Value Unit Test Condition
min. Typ. Max.
Body Diode Forward Voltage VSD - 0.8 1.3 V VGS=0V,ISD=40A
Body Diode Reverse Recovery Time trr - 13 nS IF=40A,
Body Diode Reverse Recovery Qrr dI/dt=100A/µs
- 5 nC
Charge
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
Typical Performance Characteristics
DP3080_REV1.1_EN www.depuw.com
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
DP3080_REV1.1_EN www.depuw.com
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
DP3080_REV1.1_EN www.depuw.com
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
Test Circuit & Waveform
DP3080_REV1.1_EN www.depuw.com
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18033419374
QQ 2171689052 DP3080
Trench N-MOSFET 30V, 3.9mΩ, 80A
Package Outline: TO-252-3L
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