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Tr. =0 = ter 4k Total vecombinaton Leh me — + Tc tren Eo) y becomes Tint ==) mens 50°F. 3H NOmojunckon LED nen 260-801 $V AOube HetsajUn chon LEPMaal e both Arles by hv op a, © ~ v pene powesfPine) ~ Tint Loh y ~Net= het Y Whe he G-eauxio “s/s c= gxioem 1S qe beoorne e Not a trtunallg genaaled photent ror be available From output of deer athe extean at quantum cbtitienoy- wed to calculate emt pone. The t&taina) qpariom eBiaerey & defined) an otsd of protons umitted from ‘ED 40 the of phos gemsieted rteanalef i / Ry a) 2 Me Ea Nhe hv) >photon enengyNee “L— ancori™ va apache index d by ter o vohwe 9 otal pow ernitle Pe Mest Penk 2 Pint n(n fea | Frequency Bandwea Lendrseh 4 dn optical Cormrmunrcabon, the modulabey, bomawaeh & defined eft, an Tums of electrical mpdioidt: Oe tm tes s bets . ee a optics) Banduoth At 2h0 rv) in above, frquae. Eleelweal Bandwidth wo bn Bandvorath q on gene moduantn Gandniath eh LEO 19 deteammed mean, canines f 4 Gnjeced contr Wletire » pararrhe capnatame ef dewee- | sin: A= STonm * 90-6740 ™ [ttm problema The aadiatve £ non-sadiahve recombi nabion let A minority cara en the active acgien 4 7 downle hereon chen LED are Gomer 4 Jontec wespectively. Detetine, tre tot cassict. tecombinanin Ue tine £ optital poroay geneated intenatig the peme eniuten Wavelingth sf €Tonm & the diZye cument 2 OMA 1, + Gonuee Ty Jontec T= dom A+ 0.0} Amp = 342amw | Gorn? ( Creoana 9) (oe) -orads one mon: Tadranve ti 2 injected x ively -cusrent mj iS * We time , 0& ion alt Bulk Aceombrnalion & Seternad power a qwontem edfidieney Ta 2 306 Tor 10005 g . 0A eo ee Toy ee tl So” eo qe 25 07naec ie: - extamal guantm eftreren, oe ‘recombrhahery,Droad vami * rode Aptetval nytt, * Low dntens thy + Poor dey echvene + dmeoherent vadiared Mgnt aed To overcome such probiems Laser diodes neom aint = LASER) ovm with vary ing coma in mand tem uo semiconductor, . Optical bu Ay a dlode 4 om ve highly ‘mon? ocam i very directional chomare 3 roaate prigtele oh opaat@n o La, are + prconee apsaptior menus Erstion red (traitor a Ample tw? lewd erengy a4 Eee Opsiond SNe enugy 5 Ea 72 Sine thh & om unitable stare, mitt pier ageaen SDegeers arabe, chock emitting 0 photon of enesgy M2 This oceuut woitno Wd extund attmulaton & & called spontaneous emission as Ahown in + ord travnctrow trem the exe \evd by am extemal Atfimuaa On at hour in fig ¢. da proton of mage tri, impinges en the system robe the dectym wo sh excited gros, the electron 2 tenn diordy stfvnulated drop to the gtound state & give off @ poten oy negy i. Ths emitted photen [4 n phact Potae the tyetdene phot % quuttant enaksvon io fenowr at attynusated Ermeyae eet pth exceed abAmphon populanien ef) the cuted sare '4 m that 4) the mound store, THe t known as population Snveston im tmwnen ww moran equilter: oro hen & twa condition @ away achieved foun pumping techralg vet memiconducter Ac, POP% i by injenng dectvert into ane omatens ol eco eomtad to tu lene Eno sates aoe tonol tation Invasion 4 Los Déode mod: & thmshold Conditions '. Hoan Diode mets = ystems Fer opttea) Fila Cormmuntenhon Ioondunid ts Hon, dou duet tnject'on larcs dZode Hea ova. LED Laser Hor males tr oo an te Fe one ins % len eis op soaete!+ PRL vadtonen wttrin the autonance Covi Mo Wes drodo Kel up a pallen a eleckie g smognehe Hd A Potters (at) linet called as modes 4 4 $C On be tvanvuue Elec (Te) 0 tranvure Spe ypenerGrst rigs | + Bach aur 9h modu cor be ductbed in tans Studinal latual, tvanveue vaslaton Bry fds along the maj anus a the cavtey Longftudings mode + Reored #0 Length “Uap” Menai Je Decaming the prinapie structs of eee wptctrum ef emiiteb optial wadiaren $4 Length op outty fo lage, 40 mang, lorgudrad mode exis Sasa negde | Sth modu ie in the pn ‘unchern dH on the fide ne PM paar, he cathy. p op lateral Profleim dtechon perpendicular to the » PM junotion f mrodes detumme the chasactantt ce Prasbahen patten % wreholel current deity ck ts oF yee import ance. Fabry peret Laser ahah ome i Fiqi Fabry pact THOMA cauthy for a laan dodo ta @ low dode Cont’ ag &howN 11 Beeohihagnwol rodanon Cavery haa the siete. smo dimennow tot damuntion | 250-500 Lim lo S-154um nider “Y 8 Ot 0-3. umm TeckHig 1008 Foun tegne telecine mmiroed sutace “Two Hot Past fou ra EEA Oy, mwiryers Oner dinetked tywardle each other to encloe the -fobry pect vuonalin cavity ou shown tm above apt wmine toc oe Constvucted bose a porolkd cles aend cine motirod cleavage Re) inn to 40 extapesh 0 aby OPH CA feedback a the longtirelnal derecho, % Feedback mechawiom conve the devi ee =i on oufilain 2 hence @ baht erage eThe unwonted emiaton intne latual Avech*eus avovded by avughing the edges oh the vhs ihe Met Age ith + AUC the gain rmechanum Compenrater fer, ope tome i cawty al ruonant opray 4wovelength thar ny length ivtutne covutructivlly , 40 that to fiud? yuu add ownen thee ect {te device ak epee Bu orm wane Sei, eee eared es nares ried deatruchiely optical frquensen at yeh Covutyuchve, matectesens Be met teers“) Th cary thas hove rauelencti| weimforce Humid Breqpered anyough the cautys 40 thal pats rnuttipie taps ‘the oph’cal Aud bewmer — Avrora, eruonont — roanelergit Ove coed tomgfoaden-od x Ane Ht 4 are conhy | euonere along tenga ot in the next page(4ig a) shows = Tetonant “ ay emer Bed lechweny. fo 3 vounsto to dean that “Fofkih of The TUnance fe Aedlichuy $F muence be comet m4 massaeomant wavetengtty Mm & . E fy a Benavioe pect covi"y din Hives, values Ob macy yeh “yeblectivi Mf Dutybured Feedback harcy Hays Shwehue 4 a dixtiouled feedback Corie > laser diode SRA show iGn above Xp , +h athe cleay, ws mot requived tn optien feedbaye SeeMetiliiedin Gon b dipettted” on the doce ww tue optical eer m me Spo reduce ‘thranoid aaron denihy f ercheae qventom peasy Qiks eeperarve ot Compared LEDS Tufrude modidahen uring ar arate sige A dicbheur with mest we pecauee [Asx ovdput powes 2 general: oltre Ur pore. nonunentFhe output of optteal brantmiccion Line , there be a Yeeiving davite which interprets the. information contained im otra zigna . p> The fivst element Cy the reeiver i a pholodeled Lathe photodelector certs the luminescent power variation foiling apoo it ond censer converte the of, thin optical power into a correspondingly Varying electric current Since the oplich The photodebector it hormatly daigned £0 that | |inese comers ove gunsvated mainly ta clipletion glen where mort ef the incident Leght ix @beoxbed pm high eedic field present tn the clpletion WOR Causes the carriers to Aeparate and be ae Bevo the Yeverre btared junction (Trey give mse bo a cuvrent flow tn on exherpol uvesit with one eleckon flowing for (PY Yy camer pair generated “Thu current flow in colled aPhobe current Fe the choige comviers fleos Hrough Hie material, Come elechon ~ hole patrs will reeombine and Risapoeor Or the average, the change carers de) elactrone and j holes moves a clictonce Ly @r) bp wecpectivelyy ae”nchot or hole takes Oa and ik and Mu difiuion Lingths are velakd Cepresstons En=(@ntd%* § Lp = Op ® nb Bp > Hithuion coeftients of the i be absorbed ax it passes Ik Pim optical power falling on the Photodalecor at *=0 + Pox) > power lew) at ata distance Soe! into the materia. change 4POD in the eptreal photon gure posses theough an Ai! 19 tx Aemiconduuctor 4 deWV iS there og(A) = phabon abeewpon Corin, s ye % | Preraterg tht bon Yelatonship gives the po \’ level at a dittana x inlo the naberiog | Ob a Wavelength Ga) Pox Peg emp (Xe %) \ we NERS nade! Cons!) abtoxphion coefhrcient 5 6. Light abcoxphon ckpty (urn) Light “we ' ON 6 Be Ota ty ig ae \ Savelength (um), | The above diogrorn howe the Aipendince nf Qbeorption coefhicient on wavelength for Photediods mahvials Uw clear that optical Various He depends ctrongly on toavelingthae zemoicondurctoy mahkrial can be Limited voavelength Tange % [> F parttales wed only ove | | th eat off daterrined by The uppes woveleng ‘bee bard gap *nea (Eq) ¢% the roaterial | dre um = he = SE Eq (ev) « [de for st > Troe Hen re or Ga = Lem. |fo tt ux clear thak for Langer wavelingths » Ae | photon energy a nok subfictent bo exeih an eo Lfeorn, yollence to conduction band ‘plso ad lower waveleng!h end, the photo reponte cubs oft, for lenge value of Ko > Pecomee pholons are absorbed very lose to phelodetector surface , where the reombiration me of qunerabed e” + bole Fpais a hort, 40 tay vewmbme befor they wah cotlechd by photodetector arustkry, Sk the dupletion wegton fax a width Cw) Hin the total power absorbed in Hue datanee wy 4 gien by w pow) = (xe Pin OP OMS wddx pci-e? a Te Rp > Raflechhy at fhe entrance fate of Me wya Soe sh re sig tneident powey On Hy P photodetector - q > electron charge ec hy > photon eneigy +] chaxactrictice of photodiode : The hoo important chorackrisha of phoko debctoy are Ly Quantum efficiency | Ly Response speed [The two pavometers depend majorly on Le material bandgap operating wavelength 1s doping 4 thickness of P, tm regione of ; the device 4» Quaankure =ffscieny :- | bono ef electron-hole pair generated per tnedent holon of ensigy hy a Fes}. clechon-hele paly genmraled . ty ho-g- incidint photons é et byse generated PY dak ophcol power wn BE incicurt “onthe PROS n edt if too photons erates “ty 95. electron hole pales then p= aote Sy quantum efpisency , the depletion oust be thick enough fe permit a large on o tu incidint Right to be abcovbed wilt make tHe photogenerated pletion layer the Beh. longs time & aviFl otros Kammer dvite te Getermines, Tesponse Speer BU iaprcrnise is Gone blue responce sperd land quantum affiuency The prrformance of a pholsdicds ik often charachitae, ey thx responsivity "R’ R %& ‘wlahd to quantum efficiency 4 R= Ip = Dw Pin hy photouwrent generated per poeta of paZX Ne wavelength (er). Quanhim efficiency 2 not constant at all wavelength ponsivity felle off rapidly beyond cut off mquird by excite an phetr elechor’ from. we be conduction band neL photowsrren the ampliiex ulliply Hoe pamey #4) 2 the input clveuityy of creases the ‘Yeteiver aanaibvity s went ux mnulhplied before encountering Me ctyoui Aince Phe aoctabed with vetelver Doe cariex mulkplication to take ple, tu photo Fed cowriers ar rad fo barese a region @ vay high elec field 4X present. > Tn this high field region, 0 phologtneratecd electron FE hele gain enough ennigy 4° that ib fonizec hour Udledkrone tn th, valence band wpen colloiding vith, Hum - Sth carer multiplication mechanism 4 known ax Innpoct fonization Reeily cmabd comers ar ako auelabd by high elechric feid, Hue gaining encugh energy fenpack furtour MCentzation « yenominen Jk called avalanche effect diodt breakdown, volkage a finite ' i Crakd whenas bow thy cao be noitej Y ipe corn venta used Atyucbive for achieveng com, reach through — cenatruck | rmwaltplication a collted enetnuctinnis The feach through Avalanche Photo Bicde CRrra) 4 vompored 9 high estetiviky paraterial duped ot an epitovial layer af on a Pt Ce \ [heavily doped p-bype) ubctrate . | PP Prlype diffusion or ion faplont Hun made [ io the high verchve material , followed by tre | cnabrcion op an nt cheawily doped p> hype? lage for silicon , Hu dopants wed be form fare faye | G7 hovmalty boron and phosphovur rupechivelyy th configuration ac mfeoed fe ot phTpnt reach, through atvucture . the m fayer basically on intrincte maberiak that teadictentg fos come PSIG Becseae of Imperfect puri heabion ie] ¢ Soo ee by | EB —> valance [Phat | gion teal |oeplehon Iloimum etd ~ter Rqwind for lp | - fovpact jon izaber» WW Ne oie the berm reach Hovough avisec from he phetvdi | operation ca When ca low reverse bier vellage 4 appltect . | most of the potential drop ace ta across PO |yunetion , Jthe duglehon region widens with increasing bias hich the “Veo a twibain voltage 44 wrached af “ : us abou! jpeak cleckne field ak fhe pot Junction avedanche js-t0 below that needad bo cross | breakdown Jar Hu point , tre dupletion Layee Jat a ferough* be Peonly Inbinsic, TT TeQtOP itn pormak wage, the Rao 4t operakd im fully chiplad tod -9, Light eokere the device through. the pt region, Gnd s& absorbed fn Toregion “opon being absorbed the photon giver up ik enngy |therrby ewealing electron - hole pave = The electron — hole pairs are then separated by the Alec field in the or aegion = cavers det rough fhe ta reglon in POT junction where a high electne the Held erick iwr TE ac tn this high Held region, the cox niey «e routhplication takes place ee The avwage no. of alechron —hole pairs created by Ja canner poy wanit ductany bravled 44 called line tonization rake [Neetiy cemiwonduclor materiale ech bik diFheent \ Tenization vate fev electron and hole |) a> electron ionization vate B> hole fonisation rate k= B/S measore of phole detector perfume The following Hogram xhowe ox and pe Cexperinuel sing, obtained ) voliaa for 5 ditHerent Aemicerdactor Imatesal, and tr 4 ebvicus Phat only silo has digniHeant diffrene in oC ond B Valuos Tonization vate env!) leche heldfre mulliplicatton HM fox ot covers genevetrect in probdiode tk dupined by te Ty os where Ip) > average value ob botak raultiptied oxtput current Tp > primary unmulhplied photo current Pralogoux to the pin phobediods , Uns pexfotrmancs of on RPA Kk characterized by vecponcivity 5 Jhich 2 giver by Raeo = 24 Riiep, = Rett other —-R > uniky gain Tesponeivily The sponse time of & Phokvdicds dipends on Yee following hres fottors [> bansit time of phobocorviers in He diplebon region > Dithusion Hme of photocarners generaledthere Hrree fackn 2 pavometyss yesponsible fev \ ar the Lyobsorption coettiient Cs ) Ly duplebon region width Clo), L, Photvdiods surction capacitance © amplifter capacitance. Ly detecloy lood resistance « Ly amplifier Up resistance . Ls photo diode aevier rectstonue Transit time 2} —phokedectorsts- Re at stcorniers (5. by. ipa ; Aes | The vrecporse sperd of the photodiode x lermibe fhe time takin by tre photo carriers by trave tre dapletion mgion which 2 Enown oa, tere: dk given as ty.& | hee Va > caviar AviF veloity wv w > depletion layer width | fo ailioon roakrial the maxi runt veloci tier a electrons and ~ are : 8.4xio® emf 4 44% cro/s whin Hae electric field atrength = axiot V/em TF w= opm than a high speed silicon phebdiodg will have yesponse time limit of ot os DiFRuion hres | tn a high Held ragion the ditfurion provers 6 | Atow compand with the drift of carriers | = for a high Speed phetodtede 7 he pholo carriers drould be genstaked ip te dapletion region or dose fo tk, because of which dithuaton hme 2 , less than carvier Aritt times . 1 The affect =f long diffusion Kime can be jundusteod by considering photdiode recporte hme ~ Response fime 44 daacvibed by wise time $ fall time of detechy output when tk ‘Mam inated by ophcol step inputa is Ty > Wise tip, 6° — Te > Pall my © : ‘ i 1 s time Ke : \ Ty > Wo be a07. points on the leading edgx TE > la ao ls toy. points on falling edn . |For fully depleted phobsdicdes oT, = Te For low bear Lele = phofediod are not fully diplaked 40 Ty > Tp The fyptcat vesponse bre of pov tadly depleted Pholvdieda 4s Hee eng) The fast casriers allows the devia output bo rise bof S07. of Maximum valur in © inc, Ales) carnars couser wetativdy Ging delay afore Hoe output Yeachts maximum valut iRecponse of Phobedicd for Wry, & Amadh cf + og > absorphon coefficient Cj Junchon capacitance TF photodiods capacitance is longer then the yesponse hme (tenthed by RE bme constant of and phobodiodk capacitante ood vesistone Re wip pube Response of phobodteds W>> Yen Sarge ¢j width £4 arnobR We) ode Yetponse bend fy thou| aishn fast and slow comporants 1 | Rectangulos t/p pubs hols clioda lL |The feel wrmponent de due te commer asi (1a Ere dupletion, wegion |4ew Components arises fom dithuson of carer: | that are crated at a dutanee Ly Kor oor the edge ch dkpletion region TR OW & bye tin thn function capacikanes Eo permittivity ef t2micondactor mahy A > ditfuson layer Oreo will become excessive Gj ec | w i (To have reronably high quantum efficieny a |eampromic in width of dipletion tower ehoute, Ibe done, as We 2 £9,ins Ma ae ; ! | yo quantum evharney photos of Entigye psx ye, upon wha! ysovdength vo protidiede opaanng — Cosoulove, cncident optteal powtt sequived (7D ae & photncwxent sh Sub when the photod ae 2 operoingy dercubed above Whe | 2 6-634x10 4 5210" |. 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Jt va combrnahen eh uty £ tusdae coment + Buk ark cused be 000 trom vectom % heles whieh ove ‘Fhecmalae gree 7PM ence 8] Photodiode. mean quant rvatue thie cuceny glen 04 Aha) * Be « 24 tyne Fem) Be To 1 porany detect Bue dace cecttoneS Sudace Dark cusrar et suitace leakage Curved ta dur W surface desea, cleantnen , vies -voulage 4 sednere throug se » surdaco leakage, ono & can be bby uch yohuch- om lead cyeniatn , Mean square value % jucdac quod wr ee jeuscent avcay An suatace desk ewan 0 given by K Pye) « olos #241 LBe J, te tatnce Leateage cme whe oo prottdelect malse Cusnert aye geen Pd ) Lbgy ety (Klan + Xie) # fs) + otyot tbe tbs + 94, (Sp $35) MFCM Be 7 242 Be propiem 7 far Asiz00nm Ty-yna fn Sngans pm photodiode 70.9 Rx 19003 guydace leakage neg gore. By 5 + Barn Be - 2omity. Find vaxtous rove “tems Tepe 0262 un “EX shoe y + 24 Tp Ke . "9 “ Dar OR 0-3 e140 w 20K j ae me!ATps 2+ 24Tp be saxvonie Tey xiont <2 + 2-Soxio? A* Hf Ry tw Combinalinn of load £ amphivet eopua \ qamtanes % tr (o Aim ob protodiede aarapli + 84 Capaciayct® as shown ™ prevrout quer the detectot RO L010 pra die win Be Ww perove Uke a dimple Bee ot 7 OR RCT x | pretem ¢ 4h the protedode Copacttan ce SPF , Ampldr ea Capouttone 1s Ye , usod THAD HTK & ammpllft eA inpul vettane 4 ima. Rnd Cleat Bandeolath l Cpe atk PF Br * lke te yeni \ Se en er | Zeb amare ely we af pin pholodiedia can be Increased — by using double hetero duign aimilar to that employed in ductor laser contort op ost ONE photons __ design Phe cenhral wbrinste loge in this ched blo diiReren (the duplehon region) 2 Aardio! a nd n-bype zermiconductor layers pots and p-byp conductor layers 5 Sthe bandgap ob there layers are choosen , that intrinsic region absorbs light - a pin photvdicds structure for 1850 - loser on utes Tnyey Oy PS for the Intrincic co Ine for adjacent lathe matched git Bard gap of Teh = Vas ev, Dit ae barnporent to light ak AS onm -whin x= 0-4 7 The band gap of tobincie region ix O73, 2 Operation: >The light entre the Hhrough on’ layer > B coremnon conkguration A= \Fooom in that ratyial. device from the top te by have the bop Metallic contact Th the form of wg, has frabling light by entey rvough the ving, 7 Rat of He opwation ix ¢tmiler to the [Permak photo ctiods operation, a STRESS te» Proved etecton Bynuic cpaatngy parameter oS, Ag 4 Pin Photedeoo'es Syne [oie |S [4° ee dom | ypo- | 8e0- foe 1300 tog | 1650 R [AW | ooo] owes lors-o46 Dek cuner | Ip an | two | 50-400) 05-20 | acne | te | ns es|ovosioos-os | | Iedul on ov Bm | Guy 3-0-7] 05-3 | 1-> Pemandwes | a vs [ew | 5 in vou age | YS __| | amie: Genwie oparabng peameter H 840 4 $nqahs Pyalonche photodiode amet | Symbol | omer G [Ge | Ingare lings | A wim feet 0-109] 1100-1900 wom ——_fooved aod 10-4. a 4 cunenk non | ssid 10-SD ty [m5 Jour] eswe ov -0-5 IMs | GHz |vo4o| 2-10 [20-250 hd Js? 4a] 20-0 [2-30Optical. Receiver intel Receiver operation! The duign 4 a0 opal realer da much optical brencmittey ob bo deteck weak, tebovied aignals and make decistone a dabn war gent The following diograrn ilustvabec the #hape of > jak xignal oF different points along a ophyal Junk. Stu hanmilted dala % bwo | stream, conatsting > athe £ ©) o In a Hime a durabon “74° Cbit period’. lel binary daka may 2S Pthnuakd dutovkd. “AL Pe Bee | ANS | renie ctodiods| Erect thes — cot containing # ore} fom eas er nels heise, SL Algnal, Pa Regowakd |e op vo Woe| Bsdenotee tu time lol enters \ | of sanding — Elects cally hen are many woys a a given dagi ted Pnessage » One of tu The function ef optical branemitter dbo conveyE the tlechical —zignod to optral atgnal One tony af doing thi dx by divedtiy medlulaheg the light source drive current with Eke info |sheam to preduce a Varying — ophcat ole power Pee) > Thus optical signal from Leo ey Lay & 4 jiF a pulse of ophial power ix Present for Ty tohereas ib iz 2er FE ther de abeenue of, Leght | the ophal threchold level , IK, — s+ the Reid Aig) . wived have been ¥e 4 xard be . Uyrethold level , 4, ; < ajtk the received at |e % cad % how been To actormplich Frc, the [BIE boundaries O & periodtc sreeei ed wreeiver musk Hye Thin ts done with the Wayetorn Th of % equal to tedicmnitted called aecistanc, called a clock .( periodicity agi) tha proce és Chock Yreovery, Front -end_amplifie : 4 > Norse sourtes, ok Hy dori natre front fend Reh ten the Aantitiaby and bandwith Mecessany ty dominate design 740 it 4s ehd amplitior OES sete front > Front end osmplifier A ued boy Ginereasing reine AER) Wi > Maintaining Aultoble bendusicttr, > Types yt Lottigh Tinpedanea design 4 Tran Tpedanu. dasign.portant cuign poxoruky in front end ex in to choosing of RL Coad recistone) thermal noice i inversely proportional RL (le) thermat notse of Yay 40 Rk should be a4 large ax posible bo mintmire Hrarmal noise - \ 7 : track Rc 9 Vouk | ape Sle alpen Ahern 3 Bandwidth uu ato % 1 (Rp> Retctana voltage OF warrant froma Langs where ben + Pott 0 pulkes v Ton) Toy > Vise cuvnat variations (Now comider I, and To art the aAignal uornk and Ty ae Heir [from and © puliec and o, corresponding noice arent varia bone | thin Q@- 1-2 ad ty =e a 465 see HThe waiver senstivily Panatviiy o& found from conkuined tn a bil pertod ithe awevage power | for Apeetfed data vole | | Pexeatiity - aa —@ i Peenestwity = 21 >@ { ORM where KR > anihy goin vesponsivity M> goin ef the photadiods Avbsttuke ean @in@ Prensitvity = AC Git 69) aAM @| ece/0FC]u-s @ TF there 4 no optical arspliter in a fiber - bransmission link, fun thermal and xhot noise are He, dominant noise effec ia the yeivey thermal noise > indupenclint of (UErIRg optical | Aignol power | Ahok noise > clypendent on ‘retrived power [Arcumbing there it no optical power in A received Zero pale, the fhoise variance can be written fr © at 4 c2 r+ Tehot The shot noise variation for a 4 pulte i given on oeae = aq RP, meen Be © Where FCM) -» photodiode noise figure Be > electrical bandwidth iy Be = 84 © > Bik rote “ Aubshtuting eqn @ 1p © we gee 2 ze Tenor = 44 Peanstnaty PO Se @DThe thermal noise varianw given a op = AkeT Fy 8 —-@ Ri. 2 whee Fy > hoice figure kp 2 Bolkaman constant Tb > abcolute temperature Now «ubchtuke 5 Op “ \ oy = (ote) in can® Py = Q@ senaitivity aaa Lor en Goat] ‘delving the abon equation we get Pen: = @ £4N FCI) Ba twity = Be E 7 +s | =@ Eg: concider R, = goo T = 300k Fy = 3 da Ca factor of 2) then op = atone 6 Now for wW Intaas R= toar MW d= Lesone per sto, @= 4 Than Genatinty © LSE C5 bxt0"n €errye4 ators)| for pin photodiode M = FCM) =! ecefore0-» © then Psequitiity = 73h P dBm at loo tbls data vate for USA Ber requiremant Quentin link Ti toncider an ideal photodetector which has of cebBSL¥ quomburn. qfrcency H) does not jproduce dork cuvrent Cro & and hole [Pave ar: produted to the abcenu of optical pulse 1) as the above condition ik 2 earily peccible bo find Fre minimum optical power veeelved for Apecific bit error vote performance of cligital, Ayetert > Thin minimum vewived power level 1 called a4 quantum limit = Accume that an optical pulse of omrgy “e’ fable on tht photodetector in a time inkrval "c" > Thi will be intepreled an ‘0! pulee , 16 Roe” —hole pairs are germrated 5 with a pulte precent the probability that n=o eledtrone )Eye pathrn measuremant, ar made in the Hime demo land allow the ach of Woaveforrn ditortion bo be chown tmmediatrly on Eke duplay Acrem of [Aandard Ber test equipment STE -G called age patti xy eye diagram The bane upper and lower bounds are dekrminnt by logic ont and 2evo lavele, Chon and borg ) in the diagzara