SUP90142E

www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
TO-220AB
• ThunderFET® power MOSFET
• Tuned for the lowest RDS - Qoss FOM
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
Top View G APPLICATIONS D
• Power supplies:
- Uninterruptible power supplies
PRODUCT SUMMARY - AC/DC switch-mode power supplies
VDS (V) 200 - Lighting
G
RDS(on) max. () at VGS = 10 V 0.0152 • Synchronous rectification
RDS(on) max. () at VGS = 7.5 V 0.0169 • DC/DC converter
Qg typ. (nC) 58 • Motor drive switch
ID (A) 90 • DC/AC inverter S
Configuration Single • Solar micro inverter N-Channel MOSFET
• Class D audio amplifier

ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free and halogen-free SUP90142E-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 200
V
Gate-source voltage VGS ± 20
TC = 25 °C 90
Continuous drain current ID
TC = 125 °C 52
Pulsed drain current (t = 100 μs) IDM 240 A
Continuous source-drain diode current IS 90
Single pulse avalanche current a IAS 60
L = 0.1 mH
Single pulse avalanche energy a EAS 180 mJ
TC = 25 °C 375 b
Maximum power dissipation PD W
TC = 125 °C 125 b
Operating junction and storage temperature range TJ, Tstg -55 to +175
c
°C
Soldering recommendations (peak temperature) 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MAXIMUM UNIT
Maximum junction-to-ambient (PCB mount) c RthJA 40
°C/W
Maximum junction-to-case (drain) Steady state RthJC 0.4
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.

S16-1647-Rev. A, 22-Aug-16 1 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP90142E
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Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 200 - - V
Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 2 - 4 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 250 nA
VDS = 200 V, VGS = 0 V - - 1
μA
Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 150
VDS = 200 V, VGS = 0 V, TJ = 175 °C - - 5 mA
On-state drain current a ID(on) VDS  10 V, VGS = 10 V 60 - - A
VGS = 10 V, ID = 30 A - 0.0126 0.0152
Drain-source on-state resistance a RDS(on) 
VGS = 7.5 V, ID = 30 A - 0.0133 0.0169
Forward transconductance a gfs VDS = 15 V, ID = 30 A - 63 - S
Dynamic b
Input capacitance Ciss - 3120 -
Output capacitance Coss VDS = 100 V, VGS = 0 V, f = 1 MHz - 280 - pF
Reverse transfer capacitance Crss - 24 -
Total gate charge Qg - 58 87
Gate-source charge Qgs VDS = 100 V, VGS = 10 V, ID = 60 A - 17.6 -
nC
Gate-drain charge Qgd - 17.2 -
Output charge Qoss VDS = 100 V, VGS = 0 V - 108 162
Gate resistance Rg f = 1 MHz 1.5 3 5 
Turn-on delay time td(on) - 14 28
Rise time tr VDD = 100 V, RL = 1.66 , ID  60 A, - 125 250
ns
Turn-off delay time td(off) VGEN = 10 V, Rg = 1  - 27 54
Fall time tf - 80 150
Drain-Source Body Diode Characteristics
Pulse diode forward current (t = 100 μs) ISM - - 240 A
Body diode voltage VSD IF = 30 A, VGS = 0 V - 0.85 1.5 V
Body diode reverse recovery time trr - 150 300 ns
Body diode reverse recovery charge Qrr - 0.9 1.8 nC
IF = 30 A, dI/dt = 100 A/μs
Reverse recovery fall time ta - 125 -
ns
Reverse recovery rise time tb - 25 -
Body diode peak reverse recovery charge IRM(REC) - 11.5 20 A
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S16-1647-Rev. A, 22-Aug-16 2 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP90142E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

200 10000 150 10000
VGS = 10 V thru 7 V
VGS = 6 V
160 120
ID - Drain Current (A)

ID - Drain Current (A)

1000 1000
120 90

2nd line

2nd line
1st line

1st line
2nd line

2nd line
80 60 TC = 25 °C
100 100

40 30
VGS = 5 V TC = 125 °C
TC = -55 °C
0 10 0 10
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

0.016 10000 7000 10000
RDS(on) - On-Resistance (Ω)

0.015 5600
VGS = 7.5 V
C - Capacitance (pF)

1000 1000
0.014 4200
2nd line

2nd line
1st line

1st line
2nd line
2nd line

Ciss
0.013 2800
100 100
VGS = 10 V Coss
0.012 1400
Crss

0.011 10 0 10
0 20 40 60 80 100 0 20 40 60 80 100
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
2nd line 2nd line

On-Resistance vs. Drain Current and Gate Voltage Capacitance

Axis Title Axis Title

10 10000 3.0 10000
RDS(on) - On-Resistance (Normalized)

ID = 30 A
VGS - Gate-to-Source Voltage (V)

ID = 60 A
8 2.5 VGS = 10 V

1000 1000
6 2.0
2nd line

2nd line
1st line

1st line
2nd line

2nd line

VDS = 100 V, 125 V, 150 V

VGS = 7.5 V
4 1.5
100 100

2 1.0

0 10 0.5 10
0 13 26 39 52 65 -50 -25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
2nd line 2nd line

Gate Charge On-Resistance vs. Junction Temperature

S16-1647-Rev. A, 22-Aug-16 3 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP90142E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

100 10000 0.05 10000
ID = 30 A
10

RDS(on) - On-Resistance (Ω)

0.04
IS - Source Current (A)

TJ = 150 °C
1000 1000
1 TJ = 25 °C 0.03 TJ = 125 °C

2nd line

2nd line
1st line
2nd line

1st line
2nd line
0.1 0.02
100 100

0.01 0.01
TJ = 25 °C

0.001 10 0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Axis Title Axis Title

0.5 10000 100 10000

0 80
gfs - Transconductance (S)

TC = -55 °C
VGS(th) - Variance (V)

ID = 5 mA 1000 1000
-0.5 60 TC = 25 °C
2nd line

2nd line
1st line

1st line
2nd line

2nd line

-1.0 40 TC = 125 °C
100 100
ID = 250 μA
-1.5 20

-2.0 10 0 10
-50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30
TJ - Temperature (°C) ID - Drain Current (A)
2nd line 2nd line

Threshold Voltage Transconductance

Axis Title
1000 10000
IDM limited

100
ID - Drain Current (A)

ID limited
100 μs
1000
10
2nd line
1st line
2nd line

Limited by RDS(on) (1)

1 1 ms
100
10 ms

0.1 100 ms, DC

TC = 25 °C
Single pulse BVDSS limited
0.01 10
0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

S16-1647-Rev. A, 22-Aug-16 4 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP90142E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
110 10000

88

ID - Drain Current (A)

1000
66

2nd line
1st line
2nd line
44
100

22

0 10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line

Current Derating a

Axis Title Axis Title

260 10000 100 10000
ID = 10 mA
VDS - Drain-to-Source Voltage (V)

250
25 °C
1000 1000
240
2nd line

2nd line
2nd line
1st line

1st line
IDAV (A)
2nd line

10
150 °C
230
100 100

220

210 10 1 10
-50 -25 0 25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1
TJ - Temperature (°C) Time (s)
2nd line 2nd line

Drain Source Breakdown vs. Junction Temperature IDAV vs. Time

Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.

S16-1647-Rev. A, 22-Aug-16 5 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUP90142E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
1 10000

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

Notes: 1000
0.2

2nd line
1st line
PDM
0.1 0.1
t1
0.05 t2
t 100
1. Duty cycle, D = t1
0.02 2
2. Per unit base = RthJA = 40 °C/W
Single pulse 3. TJM - TA = PDMZthJA (t)

4. Surface mounted
0.01 10
0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title
1 10000

Duty Cycle = 0.5

Normalized Effective Transient

0.2
1000
Thermal Impedance

2nd line
0.1

1st line
0.1 0.05
0.02
100
Single pulse

0.01 10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75002.

S16-1647-Rev. A, 22-Aug-16 6 Document Number: 75002

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000