1N4154

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Vishay Semiconductors
Small Signal Fast Switching Diodes
FEATURES
• Silicon epitaxial planar diode
• Material categorization:
for definitions of compliance please see
[Link]/doc?99912

APPLICATIONS
• Extreme fast switches

LINKS TO ADDITIONAL RESOURCES

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MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 14" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box

PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4154 1N4154TR or 1N4154TAP 1N4154 Single Tape and reel / ammopack

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 35 V
Reverse voltage VR 25 V
Peak forward surge current tp = 1 μs IFSM 2 A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF 300 mA
Average forward current VR = 0 IF(AV) 150 mA
l = 4 mm, TL = 45 °C Ptot 440 mW
Power dissipation
l = 4 mm, TL ≤ 25 °C Ptot 500 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj 175 °C
Storage temperature range Tstg -65 to +175 °C

Rev. 2.3, 07-Nov-2024 1 Document Number: 85524

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 1N4154
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Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 30 mA VF 0.88 1 V
VR = 25 V IR 9 100 nA
Reverse current
VR = 25 V, Tj = 150 °C IR 100 μA
IR = 5 μA, tp/T = 0.01,
Breakdown voltage V(BR) 35 V
tp = 0.3 ms
VR = 0 V, f = 1 MHz,
Diode capacitance CD 4 pF
VHF = 50 mV
IF = IR = 10 mA,
4
iR = 1 mA
Reverse recovery time trr ns
IF = 10 mA, VR = 6 V,
2
iR = 0.1 x IR, RL = 100 Ω

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Axis Title
100 1.2 10000
f = 1 MHz, VHF = 50 mV
Scattering Limit
I R - Reverse Current (µA)

1.0
10
0.8 1000

2nd line
2nd line

1st line
CD (pF)
1
0.6

0.4 100
0.1

0.2
VR = 25 V
0.01
0 40 80 120 160 200 0 10
94 9154 Tj - Junction Temperature (°C) 0.01 0.1 1 10 100
23238 VR (V)

Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Typical Capacitance vs. Reverse Voltage

Axis Title
100 10000
Tj = 150 °C
10

Tj = 75 °C 1000
1
2nd line
2nd line

1st line
IF (mA)

0.1
Tj = 25 °C
100

0.01

0.001 10
0 0.2 0.4 0.6 0.8 1.0
23241 VF (V)

Fig. 2 - Forward Current vs. Forward Voltage

Rev. 2.3, 07-Nov-2024 2 Document Number: 85524

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 1N4154
[Link]
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)

Cathode Identification
Ø 0.6 max. [0.024]

Ø 0.4 min. [0.015]

1.7 [0.067]

1.3 [0.050]
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
3.1 min. [0.120]

Rev. 6 - Date: 19. December 2011

Document no.: SB-V-3906.04-031(4)
94 9366

Rev. 2.3, 07-Nov-2024 3 Document Number: 85524

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
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Revision: 01-Jan-2025 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000