MODULE 2 AC - Edited
MODULE 2 AC - Edited
MODULE II
BJT Amplifiers: RC coupled amplifier (CE configuration) – need of various components and design,
Concept of AC load lines, voltage gain and frequency response.
Small signal analysis of CE configuration using small signal hybrid-pi model for mid frequency and
low frequency. (gain, input and output impedance).
High frequency equivalent circuits of BJT, Miller effect, Analysis of high frequency response of CE
amplifier.
AMPLIFIER
The process of increasing the signal strength is called as Amplification. An amplifier is an electronic
device that can increase the power of a signal. Amplification in practical applications is done using
Multi-stage amplifiers. A number of single-stage amplifiers are cascaded to form a Multi-stage
amplifier. A Single stage transistor amplifier has one transistor, bias circuit and other auxiliary
components.
CLASSIFICATION OF AMPLIFIERS
Depending upon the number of stages of Amplification, there are Single-stage amplifiers and Multi-
stage amplifiers.
• Single-stage Amplifiers − This has only one transistor circuit, which is a single stage
amplification.
• Multi-stage Amplifiers − This has multiple transistor circuit, which provides multi-stage
amplification.
Depending upon the parameter that is amplified at the output, there are voltage and power amplifiers.
• Voltage Amplifiers − The amplifier circuit that increases the voltage level of the input signal,
is called as Voltage amplifier.
• Power Amplifiers − The amplifier circuit that increases the power level of the input signal, is
called as Power amplifier.
Depending upon the magnitude of the input signal applied, they can be categorized as Small signal and
large signal amplifiers.
• Small signal Amplifiers − When the input signal is so weak so as to produce small fluctuations
in the collector current compared to its quiescent value, the amplifier is known as Small signal
amplifier.
• Large signal amplifiers − When the fluctuations in collector current are large i.e. beyond the
linear portion of the characteristics, the amplifier is known as large signal amplifier.
Depending upon the frequency range of the signals being used, there are audio and radio amplifiers.
• Audio Amplifiers − The amplifier circuit that amplifies the signals that lie in the audio
frequency range i.e. from 20Hz to 20 KHz frequency range, is called as audio amplifier.
• Power Amplifiers − The amplifier circuit that amplifies the signals that lie in a very high
frequency range, is called as Power amplifier.
Depending upon their mode of operation, there are class A, class B and class C amplifiers.
• Class A amplifier − The biasing conditions in class A power amplifier are such that the
collector current flows for the entire AC signal applied.
• Class B amplifier − The biasing conditions in class B power amplifier are such that the collector
current flows for half-cycle of input AC signal applied.
• Class C amplifier − The biasing conditions in class C power amplifier are such that the collector
current flows for less than half cycle of input AC signal applied.
• Class AB amplifier − The class AB power amplifier is one which is created by combining both
class A and class B in order to have all the advantages of both the classes and to minimize the
problems they have.
Depending upon the method of coupling one stage to the other, there are RC coupled, Transformer
coupled and direct coupled amplifier.
• RC Coupled amplifier − A Multi-stage amplifier circuit that is coupled to the next stage using
resistor and capacitor (RC) combination can be called as a RC coupled amplifier.
• Transformer Coupled amplifier − A Multi-stage amplifier circuit that is coupled to the next
stage, with the help of a transformer, can be called as a Transformer coupled amplifier.
• Direct Coupled amplifier − A Multi-stage amplifier circuit that is coupled to the next stage
directly, can be called as a direct coupled amplifier.
Depending upon the type of transistor configuration, there are CE CB and CC amplifiers.
Linear amplifier
A linear amplifier magnifies an input signal and produces an output signal whose magnitude is larger
and directly proportional to the input signal.
DC analysis can be performed with the ac source set to zero. This analysis, called a large signal
analysis, establishes the Q-point of the transistors in the amplifier.
AC analysis, called a small-signal analysis, can be performed with the dc source set to zero.
The total response of the amplifier circuit is the sum of the two individual responses.
The input Capacitor couples ac signal voltage to the base of transistor Q1.In the absence of CC1, input
signal will be in parallel with resistor R2 and bias voltage of the base will be affected.
Thus the function of CC1 is to allow only the ac from the signal source to flow into the input circuit
but isolates the signal source from R2.
It is used in parallel with RE. It provides a low reactance path to the amplified ac signal. If it is
absent, amplified ac signal flowing through RE will cause voltage drop across it which will feedback
to the input side and reduce the output voltage.
Because of its presence, the output is free from collector dc voltage. If it is absent, RC will come
in parallel with the resistor R1 of the next stage and changes the biasing conditions of the next stage.
R1, R2& RE forms the biasing & stabilization network. Voltage divider formed by the resistor R1
& R2 across VCC provides necessary biasing for the transistor.
RE (Emitter Resistor) provides stabilization. For forward biasing the emitter base junction, R1 & R2 are
so adjusted that the base terminal becomes more positive than the emitter.
Working
The input to the amplifier is a sine wave that varies a few millivolts above and below zero. It is applied
between the base and emitter.
As the input signal goes positive, the voltage across the emitter-base junction becomes more positive.
This in effect increases forward bias, which causes base current to increase at the same rate as that of
the input sine wave. Emitter and collector currents also increase but much more than the base current
(Since IC=β IB). This large IC flows through RC, producing a large voltage drop across it.(ICRC).Hence
the output voltage reduces, as VCC is constant.
Therefore, the output voltage from the amplifier, taken at the collector of Q1 with respect to the emitter,
is a negative alternation of voltage that is larger than the input, but has the same sine wave
characteristics.
During the negative alternation of the input, the input signal reduces the forward bias. This action
decreases base current, which results in a decrease in both emitter and collector currents. The decrease
in collector current through RC decreases its voltage drop i.e., ICRC and causes the voltage across the
transistor to rise since VCE or Vout = VCC - ICRC.
Therefore, the output for the negative alternation of the input is a positive alternation of voltage that is
larger than the input but has the same sine wave characteristics. Thus a phase difference of 180° occurs
between input voltage Vin and output voltage Vo.
By examining both input and output signals for one complete alternation of the input, we can see that
the output of the amplifier is an exact reproduction of the input except for the reversal in polarity and
the increased amplitude (a few millivolts as compared to a few volts).
Three regions Low frequency range, Mid-frequency range& High frequency range.
In low frequency range, higher capacitive reactance of CC (XC=1/2πfC) allows a very small part of
signal to pass from one stage to the next stage & also because of higher reactance of C E, the resistor
RE is not effectively shunted. Thus the voltage gain falls off at low frequencies.
In this range, voltage gain of the amplifier is constant. Reason is that with increase in frequency in
this range, the reactance of coupling capacitor CC reduces & large part of signal is coupled to the next
stage. Therefore gain increases. But at the same time lower capacitive reactance causes higher loading
resulting in lower voltage gain. Thus 2 effects cancel & uniform gain is obtained in mid frequency
range.
The amplifier gain decreases with increase in frequency. At high frequencies, the reactance of
coupling capacitor is very small & CC behaves as short circuit. The net reactance of that stage is not
equal to the next stage, due to this poor impedance matching the power of this stage is not transferred
fully to next stage & hence gain falls. Also transistor capacitances (inter electrode and wiring
capacitances) come into existence which provides feedback & thus it lower gain.
The lower cut-off frequency may be defined as the frequency at which the magnitude of the voltage
gain in the low-frequency range falls off to or 0.707 times the maximum gain in the mid-frequency
range.
The upper cut-off frequency may be defined as the frequency at which the magnitude of the voltage
gain in the high frequency range falls off to or 0.707 times the maximum gain in the mid-frequency
range.
Bandwidth :
The difference of the upper cut-off frequency and lower cut-off frequency is called the bandwidth.
BW=fc2 - fc1
Voltage Gain
𝐴𝑉𝑚
𝐴𝑉 =
2 2
√1 + (𝑓𝐿 ) √1 + ( 𝑓 )
𝑓 𝑓𝐻
𝑓𝐿 𝑓
In mid band region = 0 and = 0 then Av = Avm
𝑓 𝑓𝐻
𝑓
In low frequency region =0;
𝑓𝐻
𝐴𝑉𝑚
𝐴𝑉 =
2
√1 + (𝑓𝐿 )
𝑓
𝑓𝐿
In high frequency region = 0;
𝑓
𝐴𝑉𝑚
𝐴𝑉 =
2
√1 + ( 𝑓 )
𝑓𝐻
Advantages
➢ Excellent frequency response (constant gain over the audio frequency range)
➢ Very compact circuit (resistors and capacitors used being small and extremely light)
Disadvantages
Applications
The R-C coupled transistor amplifiers are widely used as voltage amplifier because of their
excellent audio fidelity over a wide range of frequency. However because of poor impedance matching,
this type of coupling is rarely used in the final stages.
Design
The DC load line analyzes the variation of collector currents and voltages, when no AC voltage is
applied. Whereas the AC load line gives the peak-to-peak voltage, or the maximum possible output
swing for a given amplifier.
When an ac signal is applied, the transistor voltage VCE and collector current IC vary above and below
the quiescent point Q. So, point Q is common to both dc and ac load lines. The ac load line gives the
values of VCE and IC when an ac signal is applied. AC load line takes into account the ac load resistance
while the dc load line considers only the dc load resistance.
When AC signal is applied, capacitor acts as short circuits. Also dc voltages need not be considered.
At saturation : VCE = 0
𝑉𝐶𝐸𝑞
ICsat = 𝐼𝐶𝑞 + 𝑅𝑎𝑐
At cut-off : IC = 0
In addition to dc signal, a low amplitude of ac signal is added. Study of small signal operation may be
done either graphically or by using small signal equivalent circuits for BJT operating in the active
region.
For study of small signal operation, the transistor may be replaced by its equivalent circuit and then
the usual method of network analysis may be used to obtain expression for operating characteristics
like input impedance, output impedance, voltage gain, current gain etc.
HYBRID π MODEL
It is a widely used model developed for BJT in CE configuration. It is also known as Giacoletto model.
In order to develop small signal model, transistor is treated as a two-port network as shown in figure.
The simplified small-signal hybrid-π equivalent circuit for the npn transistor is shown below.
The parameters gm, rπ in this model depends upon the value of dc quiescent current ICQ and hence
provide more accurate analysis.
The Early effect, named after its discoverer James M. Early, is the variation in the effective width of
the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector
voltage.
𝑉𝑐𝑒 𝑉𝑐𝑒
Considering early effect, 𝑣𝑏𝑒 = 𝑟𝜋 𝑖𝑏 ; 𝑖𝐶 = 𝛽𝐼𝑏 + = 𝑔𝑚 𝑉𝜋 +
𝑟0 𝑟0
ro is called the small-signal transistor output resistance. VA is the Early voltage and is
a positive quantity.
To find Rin
Output resistance Ro
To find R0
VS = 0, then Vπ = 0 and gm Vπ =0
Voltage Gain
𝑉𝑜 𝑅1 ||𝑅2 ||𝑟𝜋 𝑅𝑖
𝐴𝑣𝑠 = = −𝑔𝑚 (𝑟0 ||𝑅𝐶 ||𝑅𝐿 ) = −𝑔𝑚 (𝑟0 ||𝑅𝐶 ||𝑅𝐿 )
𝑉𝑠 𝑅1 ||𝑅2 ||𝑟𝜋 +𝑅𝑆 𝑅𝑖 +𝑅𝑠
𝑉𝑜
𝐴𝑣 =
𝑉𝑖
Where Vi =Vπ
Current Gain
𝑖𝑜
𝑨𝒊 =
𝑖𝑖
𝑉0
Output current 𝑖0 =
𝑅𝐿
𝑉𝑖
Input current 𝑖𝑖 =
𝑅𝑖𝑛
𝑅𝑖𝑛
Then 𝑨𝒊 = 𝐴𝑣
𝑅𝐿
Input impedance: Since, r0 is very high compared to RE, r0 is neglected in the analysis. The resistance
𝑅𝑖′ is the input resistance looking into the base of the transistor.
= 𝑟𝜋 + 𝑅𝐸 + 𝑔𝑚 𝑟𝜋 𝑅𝐸
𝑅𝑖′ = 𝑟𝜋 + 𝑅𝐸 +β𝑅𝐸 = 𝑟𝜋 + 𝑅𝐸 (1 + 𝛽)
In the common-emitter configuration that includes an emitter resistance, the small-signal input
resistance looking into the base of the transistor is rπ plus the emitter resistance multiplied by the
factor (1 + β). This effect is called the resistance reflection rule.
Voltage Gain Av
output voltage 𝑉0 = −𝑔𝑚 𝑉𝜋 (𝑅𝑐 ||𝑅𝐿 ) Since, r0 is very high, it is neglected in the analysis.
−(𝑅𝑐 ||𝑅𝐿 )
Then voltage Gain becomes 𝐴𝑣 = 𝑅𝐸
𝑉𝑆 𝑅𝑖
If source resistance is taken into account, 𝑉𝑖 =
𝑅𝑆 +𝑅𝑖
𝑉 𝑉 𝑉 𝑅𝑖
Then 𝐴𝑣𝑠 = 𝑉0 = 𝑉0 𝑉 𝑖 = 𝐴𝑉 𝑅 +𝑅
𝑆 𝑖 𝑆 𝑆 𝑖
Output resistance R0
Set Vs = 0 and apply a voltage source at the output side as shown below:
𝑽𝒙
𝑹𝟎 = 𝑹𝑪 ||
𝒊𝒙
Then 𝑣𝑥 = 𝑖𝑥 𝑟0 + 𝑖𝑥 𝑅𝐸′
𝑣𝑥
∴ = 𝑟0 + 𝑅𝐸′
𝑖𝑥
Current Gain
𝒊𝟎
𝑨𝒊 =
𝒊𝒊
𝑉0 𝑉𝑖
𝑖0 = & 𝑖𝑖 =
𝑅𝐿 𝑅𝑖
𝑉0 𝑅𝑖 𝑅𝑖
then 𝑨𝒊 = = 𝐴𝑣
𝑅𝐿 𝑣𝑖 𝑅𝐿
𝑉 𝑉 𝑉
The gain at low frequency is given by 𝐴𝐿 = 𝑉𝑜 = 𝑉𝑜 𝑉 𝑖
𝑆 𝑖 𝑆
1 1
= 𝐴𝑚 = 𝐴𝑚
1 𝑗
(1 + ) (1 − )
𝑗2𝜋𝑓(𝑅𝑖 + 𝑅𝑆 )𝐶𝐵 2𝜋𝑓(𝑅𝑖 + 𝑅𝑆 )𝐶𝐵
1
𝐴𝐿 (𝑓) = 𝐴𝑚
𝑗𝑓
(1 − 𝐿1 )
𝑓
1
Where 𝑓𝐿1 = (2𝜋(𝑅 ------- (1)
𝑖 +𝑅𝑆 )𝐶𝐵 )
Since 𝑟0 is very high, its neglected in analysis. Then the output voltage is given by
Assuming 𝑅1 ||𝑅2 is very high, its neglected here. The source voltage can be written as
1
𝑉𝑆 = 𝐼𝑏 (𝑅𝑆 + 𝑟𝜋 ) + (𝐼𝑏 + 𝑔𝑚 𝑉𝜋 ) (𝑅𝐸 || )
𝑗𝜔𝐶𝐸
𝑔𝑚 𝑉𝜋 1 𝑔𝑚 𝐼𝑏 𝑟𝜋 1
= 𝐼𝑏 [(𝑅𝑆 + 𝑟𝜋 ) + (1 + ) (𝑅𝐸 || )] = 𝐼𝑏 [(𝑅𝑆 + 𝑟𝜋 ) + (1 + ) (𝑅𝐸 || )]
𝐼𝑏 𝑗𝜔𝐶𝐸 𝐼𝑏 𝑗𝜔𝐶𝐸
1
= 𝐼𝑏 [(𝑅𝑆 + 𝑟𝜋 ) + (1 + 𝑔𝑚 𝑟𝜋 ) (𝑅𝐸 || )]
𝑗𝜔𝐶𝐸
1
= 𝐼𝑏 [(𝑅𝑆 + 𝑟𝜋 ) + (1 + 𝛽) (𝑅𝐸 || )]
𝑗𝜔𝐶𝐸
Then gain
Assuming 𝑟𝜋 = 𝑅𝑖
𝑓
−𝑔𝑚 𝑅𝑖 [𝑅𝐶 ||𝑅𝐿 ](1+𝑗𝜔𝑅𝐸 𝐶𝐸 ) (1+𝑗 )
𝑓𝑧
𝐴𝐿 (𝑓) = 𝑗𝜔(𝑅𝑆 +𝑅𝑖 )𝑅𝐸 𝐶𝐸
= 𝐴𝑀 𝑓
[[(𝑅𝑆 +𝑅𝑖 )+(1+𝛽)𝑅𝐸 ](1+ )] 1+𝑗
𝑓𝐿3
(𝑅𝑆 +𝑅𝑖 )+(1+𝛽)𝑅𝐸
1
1 2𝜋(𝑅𝑆 +𝑅𝑖 )𝑅𝐸𝐶𝐸 1
where 𝑓𝑧 = 2𝜋𝑅 𝐶 and 𝑓𝐿3 = = ′𝐶
𝐸 𝐸 (𝑅𝑆 +𝑅𝑖 )+(1+𝛽)𝑅𝐸 2𝜋𝑅𝐸 𝐸
(𝑅𝑆 +𝑅𝑖 )
where 𝑅𝐸′ = 𝑅𝐸 ||
(1+𝛽)
𝑠 𝑠 𝑠+𝜔𝑧
Over all gain A = 𝐴𝑀
𝑠+𝜔𝐿1 𝑠+𝜔𝐿2 𝑠+𝜔𝐿3
AM – Mid-band Gain
MILLERS THEOREM
Miller’s theorem discusses the effect of a feedback amplifier component on input side and output side
of an amplifier. This is usually used to analyse transistor circuit at high frequencies.
𝑉𝑖 − 𝑉0
𝐼𝑖 =
𝑍𝑓
Then
𝑉𝑖 − 𝐴𝑉𝑖 1−𝐴
𝐼𝑖 = = 𝑉𝑖
𝑍𝑓 𝑍𝑓
𝑉𝑖 𝑍𝑓
Then input impedance 𝑍𝑖 = = − − − (1)
𝐼𝑖 1−𝐴
𝑉𝑜 𝐴𝑍𝑓
Hence the output impedance 𝑍𝑜 = = − − − (2)
𝐼𝑜 1−𝐴
Combining (1) and (2) we get the equivalent circuit of above amplifier.
rb – series resistance between internal base terminal and actual base terminal
re - series resistance between internal emitter terminal and actual emitter terminal
rc - series resistance between internal collector terminal and actual collector terminal
The feed back capacitor Cμ can be split using Miller’s theorem. The capacitance reflected at input side
is
𝐶1 = 𝐶𝜇 (1 − 𝐴𝑣 )
(𝐴𝑣 − 1)
𝐶2 = 𝐶𝜇 = 𝐶𝜇
𝐴𝑣
1
𝑉𝑆 (𝑅𝑖 ||𝑗𝜔𝐶 )
𝑖
Input voltage 𝑉𝑖 = 1
𝑅𝑆+ (𝑅𝑖 ||𝑗𝜔𝐶 )
𝑖
1
𝑅𝑖
𝑗𝜔𝐶𝑖
𝑉𝑆 1 𝑅𝑖
𝑅𝑖 + 𝑉𝑆 𝑅𝑖
𝑗𝜔𝐶𝑖 1 + 𝑗𝜔𝐶𝑖 𝑅𝑖
𝑉𝑖 = = = 𝑉𝑆
1 𝑅𝑖 𝑅𝑆 (1 + 𝑗𝜔𝐶𝑖 𝑅𝑖 ) + 𝑅𝑖
𝑅𝑖 𝑅𝑆 +
𝑗𝜔𝐶𝑖 1 + 𝑗𝜔𝐶𝑖 𝑅𝑖
𝑅𝑆 + 1
𝑅𝑖 +
𝑗𝜔𝐶𝑖
𝑅𝑖
= 𝑉𝑆 𝑗𝜔𝐶𝑖 𝑅𝑖 𝑅𝑆
(𝑅𝑆 +𝑅𝑖 )(1+ )
(𝑅𝑆 +𝑅𝑖 )
𝑉0 𝑉 𝑉 𝑅𝑖
High frequency gain 𝐴𝐻 (𝑓) = = 𝑉0 𝑉 𝑖 = −𝑔𝑚 (𝑅𝐶 ||𝑅𝐿 ||𝑟0 ) 𝑗𝜔𝐶𝑖 𝑅𝑖 𝑅𝑆
𝑉𝑆 𝑆
𝑖 (𝑅𝑆 +𝑅𝑖 )(1+ )
(𝑅 +𝑅 )
𝑆 𝑖
1
𝐴𝐻 (𝑓) = 𝐴𝑀 𝑗𝜔𝐶𝑖 𝑅𝑖 𝑅𝑆 = 𝐴𝑀 (1+𝑗2𝜋𝑓1𝐶 = 𝐴𝑀 1
𝑖 𝑅𝑖 ||𝑅𝑆 )
𝑓
(1+ ) (1+𝑗 )
(𝑅 +𝑅 ) 𝑓𝐻1
𝑆 𝑖
1 1
𝑓𝐻2 = =
2𝜋𝑅𝐶2 2𝜋𝑅𝐶𝜇
1
𝐴𝐻 (𝑓) = 𝐴𝑀
𝑓 𝑓
(1 + 𝑗 ) (1 + 𝑗 )
𝑓𝐻1 𝑓𝐻2
1
where over all cut-off frequency 𝑓𝐻 =
2 2
√( 𝑓 ) + ( 𝑓 )
𝑓𝐻1 𝑓𝐻2
Short circuit current gain is used to study the frequency effects on the performance of BJT.
For finding out the short circuit gain, the collector is connected to signal ground, so the hybrid π
equivalent circuit of BJT at high frequency is
𝑉𝜋 𝑉𝜋 𝑉𝜋 1
𝐼𝑏 = + + = 𝑉𝜋 ( + 𝑗𝜔(𝐶𝜋 + 𝐶𝜇 )) − − − (1)
𝑟𝜋 1⁄ 1⁄ 𝑟𝜋
𝑗𝜔𝐶𝜋 𝑗𝜔𝐶𝜇
𝑉𝜋
𝐼𝐶 + = 𝑔𝑚 𝑉𝜋
1⁄
𝑗𝜔𝐶𝜇
1
𝐼𝐶 = 𝑉𝜋 ( 𝑔𝑚 − ) = 𝑉𝜋 ( 𝑔𝑚 − 𝑗𝜔𝐶𝜇 ) − −(2)
1⁄
𝑗𝜔𝐶𝜇
𝐼𝐶 ( 𝑔𝑚 −𝑗𝜔𝐶𝜇 )
Current gain 𝐴𝐼 = =
𝐼𝑏 1
(𝑟 +𝑗𝜔(𝐶𝜋 +𝐶𝜇 ))
𝜋
𝜔𝐶𝜇 ≪ 𝑔𝑚
( 𝑔𝑚 𝑟𝜋 )
∴ 𝐴𝐼 =
(1 + 𝑗𝜔𝑟𝜋 (𝐶𝜋 + 𝐶𝜇 ))
(𝛽)
since 𝑔𝑚 𝑟𝜋 = β, 𝐴𝐼 =
(1+𝑗2𝜋𝑓𝑟𝜋 (𝐶𝜋 +𝐶𝜇 ))
𝛽 ( 𝛽)
=
√2 2
√1 + (2𝜋𝑓 𝑟𝜋 (𝐶𝜋 + 𝐶𝜇 ))
𝛽
𝛽 (𝛽)
= 2
√1+1 √1+(2𝜋𝑓𝛽 𝑟𝜋 (𝐶𝜋 +𝐶𝜇 ))
1
𝑓𝛽 =
2𝜋𝑟𝜋 (𝐶𝜋 + 𝐶𝜇 )
Cut-off Frequency
It is the frequency at which short circuit current gain becomes unity. It is denoted by fT . hence it is
called unit gain frequency or unit gain bandwidth.
At f = fT, AI = 1.
(𝛽)
𝐴𝐼 =
(1 + 𝑗2𝜋𝑓𝑟𝜋 (𝐶𝜋 + 𝐶𝜇 ))
we have
1
𝑓𝛽 =
2𝜋𝑟𝜋 (𝐶𝜋 + 𝐶𝜇 )
( 𝛽)
∴ 𝐴𝐼 =
𝑓
(1 + 𝑗 )
𝑓𝛽
(𝛽)
|𝐴𝐼 | =
𝑓 2
√(1 + ( ) )
𝑓𝛽
(𝛽)
At f = fT, AI = 1. Then 1 = 2
𝑓
√(1+( 𝑇 ) )
𝑓𝛽
2
𝑓𝑇
𝑠𝑖𝑛𝑐𝑒 ( ) ≫ 1
𝑓𝛽
(𝛽) 𝛽 𝑔𝑚
1= then 𝑓𝑇 = 𝛽𝑓𝛽 = =
2 2𝜋𝑟𝜋 (𝐶𝜋 +𝐶𝜇 ) 2𝜋(𝐶𝜋 +𝐶𝜇 )
√( 𝑓𝑇 )
𝑓𝛽
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