084N06L-VB

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084N06L-VB Datasheet
N-Channel 60 V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
• 175 °C Junction Temperature
VDS 60 V • TrenchFET® Power MOSFET
RDS(on) VGS = 10 V 5 m • Material categorization:
ID 120 A
Configuration Single

TO-220AB D

S
N-Channel MOSFET

GDS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 120
Continuous Drain Current (TJ = 175 °C)b ID
TC = 100 °C 90
Pulsed Drain Current IDM 350 A
Continuous Source Current (Diode Conduction) IS 70 a

Avalanche Current IAS 50

Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ
TC = 25 °C 136
Maximum Power Dissipation PD W
TA = 25 °C 3b, 8.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t  10 sec 15 18
Maximum Junction-to-Ambienta RthJA
Steady State 40 50 °C/W
Maximum Junction-to-Case RthJC 0.85 1.1
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t  10 s.

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 60 A
VGS = 10 V, ID = 20 A 5
VGS = 10 V, ID = 20 A, TJ = 125 °C 10
Drain-Source On-State Resistanceb RDS(on) m
VGS = 10 V, ID = 20 A, TJ = 175 °C 15
VGS = 7.5 V, ID = 15 A 8
Forward Transconductance b gfs VDS = 15 V, ID = 20 A 60 S
Dynamic
Input Capacitance Ciss 6800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 570 pF
Reverse Transfer Capacitance Crss 325
Total Gate Chargec Qg 47 70
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 50 A 10 nC
Gate-Drain Charge c Qgd 12
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V, RL = 0.6  15 25
ns
Turn-Off Delay Time c td(off) ID  50 A, VGEN = 10 V, Rg = 2.5  35 50
Fall Timec tf 20 30
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current I SM 350 A
Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V
Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (25 °C unless noted)

100 100

VGS = 10 thru 7 V
80 80

6V

I D - Drain Current (A)

I D - Drain Current (A)

60 60

40 40

TC = 125 °C
20 20
25 °C
3V, 4V - 55 °C
0 0
0 2 4 6 8 10 0 1.5 3.0 4.5 6.0 7.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

120 0.015
TC = - 55 °C
100
0.012
g fs - Transconductance (S)

25 °C
80
0.009
125 °C
60
VGS = 10 V
0.006
RDS(on) -

40

0.003
20

0 0.000
0 10 20 30 40 50 0 90 100 110 120 130
ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current

8000 10

7000
VDS = 30 V
V GS - Gate-to-Source Voltage (V)

8 ID = 50 A
6000
Ciss
C - Capacitance (pF)

5000 6

4000

4
3000

2000
2
Coss
1000
Crss
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

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TYPICAL CHARACTERISTICS (25 °C unless noted)

2.5 100

VGS = 10 V
ID = 20 A
RDS(on) - On-Resistance (Normalized)

2.0
TJ = 150 °C

I S - Source Current (A)

1.5
TJ = 25 °C
10

1.0

0.5

0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

MMJSRRJUTUU
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THERMAL RATINGS
60 1000
Limited by
RDS(on)*
50
100 10 µs
100 µs

ID - Drain Current (A)

ID - Drain Current (A)

40
10
1 ms
30 10 ms
1 100 ms
DC
20

0.1 TC = 25 °C
10 Single Pulse

0 0.01
0 25 50 75 100 125 150 175 0.1 1 10 100
TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Maximum Drain Current vs. Ambient Temperature Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

0.05
0.02

Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10 100
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

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TO-220AB
MILLIMETERS INCHES
A
E DIM. MIN. MAX. MIN. MAX.
F
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
Q
H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
D

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
1 2 3 J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
L(1)

M* ØP 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118
b(1) ECN: X12-0208-Rev. N, 08-Oct-12
L

DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

C
b
e

J(1)
e(1)

MMJSRRJUTUU

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