LUNIT- 09 (Hectronies) i) hen the inteaatemie eoncing Y becomes equal te © (gaa) Hun the bend of AN Filled energy Auels Gentes from ta band of GN uni hahosan MednteCorctors) » Tasuleders tered serieancluchs on fa aula Srrluctors (rete 2 cenduchies the. Gomduetion canct valenes band panty SWAP each ofan and Hore 1 no ouugy gab in’ bekoun > Sends sae") =, 2, | ~~ F ei "| Semiconductors - ———§ ™ semiceretucters the velmee ben da tebally Fitted at Oe the enduction bar Ja emply bab the betwen Conduction band and alee: bored Watt aol 2 db ds ak See EG; fer getmamius Ls eraey end fer Silica ib Hew. At cere Ridin temperature Semisonsluctor behes a beulator. denben= é Gait ot me Uicaa mee See Se ee poe ae a See ati ttn i ae eee eet Se Se ee INTRINSIC SEMICONDUCTORS - A para semiconductor which Jk free of ewery impunity ie called intrinale semiconductor. Examples Silicon Csi) and Gurmaniven Ce + Silicon (4) ator fat set Germann (32) Utastantadtartsaas apt the Si and Ge) have fom vahnu elechonsruvsics LUNTT-09 (Electronics) The four Valores. electmns af a gamaniun atom ‘form four Covalint bands by sharing Hee electrons ef neighbouring foun geamanium adwns. The, minimum Snagy required 0 break a cevalat band Lb ca ev for Go ond Liew fer ie AL vom ctempaatune when an electyon breaks aay ‘from & Comlint bend the emphy place oy vacancy Ue ts ‘the bor is Called a hole er exten slesfrte fled is cbhllet, free. elictvone move in opposite eit Sr matic “8 catch Torta °; chy Jas can omchy equal in Se othe os Me = a Also the Conductivity ef intrinsic semitoncluctor is very Loo. The hele da Conuislatd a an achive particle in ‘the valance. bavel having & positive change equal te that of an eeetron, Doping :- EE aaping’ daa process of addition of @ olesinable. pai ty oa pure semicomivetor 42 modify sits im @ Controlled manner. Te. inparily atoms added are cable el i semitenciuetot increases tts electric eee oe Methods of cling: (i Aebd the impunity atoms in the. mult of semicanlick. Gi Toplnt clepant atoms by bembasing tn semicarducly sith hair ions G7 Heat ihe sericonivctor in ebroiphure 1 depen atoms. EXTRINSIC SEMICONDUCTORS ~ 7 eloped semieenduche er a semiceatucter ait suitable impurity adm oddest do Ub is Called extringc “Semeandtucler- Extringe semiceroluctors ane of two typea- G) nedype Semiconductor GL P-type Semicancluctoy (i) R=type Semiconductor: whan @ Pure semicencluctor of sidicen (si) or corre Cea load sin prime? toms ei have! five valine electrons (Phasphoms, Arsenic, antimony oseoe rasa tere Charts, rr air Tre, fosd oh the Hee valent elechroas of the impunity atoms alll foro ‘Covalent band with adjoining fom ahs’ of the silleen , cokile tne. fifth Setter? i free te mere. Thus eau impusbty thor ‘added slorméss one free alectron te tne ergdtls roe Innpanity atoms wet ‘cabled cloner atoms. Shree the Conduction of electricity is otue ko the wotion of electrons (ie negative chapels so that the ‘uuulting semiconeluctor ds Called n-iye or oteney ype Semizondu ctor: a m-byge semtumductrs ebstrons ane majority canniers and heleh aie minctity comin,PHYSICS: UNTT- 09 (Hlectrenies)_ CLAS6 - KL Git) P-type Semiconductor — when a puna semiconductey of silicen Csi of Germain (Ge) ab with @ Contreted amourt ob trivalint altos which have three alana eltetrend Coron Alms ‘alliv, Zncivm) then wt is called | Potiype.’ demicanctucter. The three valence electrons of the impuni abn alll foun Colent tovle ith heading te ators of qrmanium (ae) while thane will be che Incomplete. Coalant bond "usith a neighbouring Ge abo, tris olificiency ef an electron create a ‘hele! Tha trivalint atoms are cables! Oteepter atoms ond the conduction of elechicity occuts olue to motion of holes Che: Positive charges), 50 He resulting -senieankcbr | Ls callid p-type er Beceptor ype semiconductor \ Tn potype semicanductor elechent ane minsrity Distinction behiein Intrinsic and exrntic somenducters ‘Tc SEMICONDUCTOR 1. eis pe senicondacing exe ad oo | 1 Rapp drepr ent pay eapy ‘ape seas weed sete preimsahcy m| 4, Ea we cystine fof psn | 2 anya inal paso cyl at ps. npn sf ee ‘forme as, be, om 1 Tevatron ga Thee exe of deceit 9 1 Tester oe crm ston ad {le eof Sle sane Eads od ey al aed ‘atte a cs ft pO ctype ey 4. Saeed. 4 decal ancy nih eect onc i fata of | 5. ‘sopra ne ere otetiiy pea ee ecpene wlan tegen ore maiebe meer Diffsenee behuesn N-type 1. Rintemtnicenionbcorisinomaaes | 1 Riser ae ty dopa apy em V8 pep ef | ty deg nay ene ooo code om grin ar ucoe | ple ep en rae aero 12 The impo woms add, provide ex ‘esa eu ol le Ser 2 Telapery won le ee ment ‘leer lt) a te ow = Sie cer ee ee sepa yam 4 Tere dey) meh pe an | A Tee dy imc pet a Sisedaonmhinaon Seetcmhie ny erreepineivcaevtccatae | §. Texcyeren krone niaa § oteiireny ominaten Sliven he coedUNTT- 09 (Hectronies) P-N JUNCTION token & patipe sumicerdluclor crystal Ls jeinesl Lith am rrbgpe” dumeenluctor rgd tLun tae Young axnangement Lh called a pon junction’ or junchion ide Formation ©} PN-Tenction - To make @ Pion junction the ntype ond p-hpe silicon One cut into Hib wafers! Tp on @ wefer of ne silicon yan aluminium film J and uated Joa Aamposcrure i indo silicon and @ pype semicenyctor sf an) n-type Aamiconducter Such @ on nerepion is called Pn Junction, Diffusion and Deijt - whan Pon junetion Jb Jowmed disc to olifermce hn Conantriction of cosalas Th tye regions of Pon mation, the eluctrons fram niangion oiftse through ‘the junction ints p-repion and hules from p- region diffuse Into n-ngion, The motion of comers ghes | ite to diffusion cusnent acres the jureton, | tk cy or Das. to difusion ef electrons and tales a Layer of poitively chaageat’ donor atoms in n-repion and a Layer of ie eh cl acceptor atoms in pereglon are crested Ths petitive ond ve space _Tigions_on beth Sides: of pon junction will form a region uslith has lormebile tend and ts calles olipleton region. Duc te positive anal negakive space ch at pun junction, an electric. 2b step aol be Jiretion Dus te thls electric field cladbped at he. urction jan eleetron on p-siee of the plone ip Nesid ond a Aales on n-siele of junchion moves to P- sha of Joncton- Tx motion of thuse cl fe dechie fidd is Called Cent athe, which is eppaie bn ovection $e the isn cumert- Fa the bapring the aijfusion Current is Lage act hift comma of ot ig te cif pas hues » the strength of electric fied across the jumckon increses cand tunuby drift euarant increases: This process cenbinues until the abiffusion Cudmert becomes equal to the olrift Current slow the p-n junction is sald 4a be be in emuif- bru Ande ane fhe “4 mo Curent acriss the pn junctin- ‘At this dfage, the Potential barrier cress +e junction bas masini vali Ve. Aas the movement of maja Conia across tha junction slope net he pees ed a4 a barrie, henue Knoion ab potential barrie. AK room camperatuae (cok) Va id about osy Foe Ge om OT for sic The value of Ve increnses uth vile in dumprrshre for Ge end sh commie ae ‘As a vault of ita chiftPHYSICS: UNTT- 09 (Blectronics)_ CLASS - KE BIASING OF THE PN JUNCTION - There akt tuo methodé of biasing the pn Junction G) Forward biasing — Gi) Reverse baianng (1) Forward Giasing '- 7 pm junction ia sald Jo be forward biased tHe patitive Aoemind of the. exhenal Sree tte pe side ond the negative teartral to the noshle of Pon junction. fu ther ond 2. The. effective valia of biasing is Gor), fel bere in Poel (2) Rewerse_Blacing : ‘A pon junction is said to be reverse biased if the positive derminal of du. extemal baitery is Comedie ‘hse and the ragatve deri do pte of te Pon junction. | | The effective valu of barrier potential under vewense bios dt CVa+v). HX 8 Th remale biating, there is ne conduction across the junction oluc fe mijerity camniers- Hewever & fas mimehity Caraiers of pon junction alied® cross the jmction Seer ccceleadted by high rewyse bias witage. They Conalitule o cushert chien 1s Called reverse curmnt or feakage. cuskarcs CHARACTERISTICS OF PN JUNCTION DIODE WD Forwomnd Choacteristies - On plotting a between » sa pa el ASP its red eae > Fe oa Se sacnrwern Te is found that forward voltage. V=Vn, Called knee voltage Cosy for Ge and &7V for si) te cometLUNTT- 09 (Electronics) Hrreugh the jumetion stants tncreasing rapidly colt Vatioge ond dhauivg the, now, fot BL al the Emce voltage ke Vaslakion In current is negligible amd the curve Lb non- Linear. (i) Reverse Characteristics - On plotting a gush behoun renrse Ein veltege and Yevabe Cumant, ne get the newase Chonaciristies ad Shown in fit From “the Cue we mote that in Teese biosing. th Bn Junction ,the cusrent Ja very small (# HA) amd ob indspendint on voltage updo Ceukun overt blak vVellege » Kroun ab breakolea™ voliege REVERSE OSC 44 Fp fron ¢speifd by pon jenetion ‘damaged, iT get PN-DiedE_AS_A_RECTIFIER- Rectifier ik a davice which a used for converting alteneting cumrant /vattage inte cirech coment vahage, Trane ane toe bypes of rectifier G> Half wave rectifier Gi) Fall Wave Rectifier (1) HALE wave ReCTIEIER- Ac. voltage to be rectified iB connected to the primary winding AA ef a stepdown transformer ae Cail of the trenkformer. 3, ib Connected te the portion P of the pon junction. Ss it comecied +2 the potion n threuph Load resiatance R. Oudput dd taken aevoss the Lead resistence R During patltive, of Ao suppose 54 becomes pate és" beconer egabve ot ne pthc aa Basid. The reilstance of prjunction becames Lows The maximum forward curent flout fr the. elveuit ond we gut ontpat. acres - Lead. During negetive of Me. 5 becames petits end ON pattie “than fun fo trobiased. Te offers high renlatenee ond hence anere ub no flew of curkert and thus no output across Load. ete; > the enlpeh, we have carrwt corniper= stig Sooo ah ep of una ond sa Bd i ae eps elk wave rect Headion (2) FULL Wave_ecrtrrer — For full wave rectification , we have to use ‘toe pun junction alledes Dy ard Da. the circuit is Shawn In the given ip TRAE -epeecrentn) During the positive. al Jiao >, Jb fecward biased and the. lide Biased. The fensarl current fltwse thragh lied >, in te civection at han in fi [Pbierve trad aluring both the halh yells of Ac, cudeort Hireigh fia 7 the save chaclan, Hence the ontpat signed voltage is eniivectional havi cmttnts (oe de: components and eh de ag vega Oe ceo Bore Maprae atage, by Hering mugh =: Biter cieate’ FILTER- A single capacitor of value 9 ress the. owlpub 4 Oe Komponen is bypesed or woltoge chp across Lead