Heaven’s Light is Our Guide
Rajshahi University of Engineering & Technology
Department of Electronics & Telecommunication Engineering
Laboratory Report
on
ETE 2212: Sessional Based on Power Electronics
Submitted by
Akash Roy
Roll No. 2104030
Submitted to
Md. Tarek Hassan
Lecturer
Department of ETE
December 8, 2024
Contents
List of Figures ii
List of Tables iii
Experiment 1: Experimental Observations of the Switching Characteristics of Power
Diode, SCR, Power MOSFET, and IGBT with Proper Triggering Circuits. 1
i
List of Figures
1.1 Example of a Power Diode 2
1.2 Example of a Thyristor 3
1.3 Example of a MOSFET 4
1.4 Example of a IGBT 5
ii
List of Tables
iii
Heaven’s Light is Our Guide
Rajshahi University of Engineering & Technology
Department of Electronics & Telecommunication Engineering
CSE 2254: Sessional Based on CSE 2253
Experiment No. 49-63
Submitted by: Submitted to:
Akash Roy Md. Rakib Hossain
Roll: 2104030 Assistant Professor
Session: 2021-22 Dept. of ETE, RUET
Date of Experiment : 2/12/2024
Date of Submission :9/12/2024
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Experiment No: 1
Experimental Observations of the Switching Characteristics of Power Diode,
SCR, Power MOSFET, and IGBT with Proper Triggering Circuits.
1.1 Objectives
The main objectives of this experiment are :
• Analyze the switching characteristics of power diodes, SCRs, power MOSFETs, and IG-
BTs.
• Implement triggering circuits to control the switching of these devices.
1.2 Theory
Power Diode: A power diode is a type of semiconductor diode designed to handle large cur-
rents and voltages, typically used in power conversion and rectification applications. It al-
lows current to flow in one direction (forward biased) while blocking current in the reverse
direction (reverse biased).
Key characteristics of power diodes include:
1. High Current and Voltage Rating: Power diodes are built to handle higher currents and
voltages compared to small signal diodes.
2. Low Forward Voltage Drop: This reduces the power loss when the diode conducts.
3. Fast Switching Times: Some power diodes are designed for fast switching, like Schottky
diodes, while others, like standard rectifier diodes, may have slower switching times.
1
Figure 1.1: Example of a Power Diode
Thyristor: A thyristor is a solid-state semiconductor device used to control and switch high
power in electronic circuits. It operates similarly to a diode but with an additional gate ter-
minal that allows control over its conduction. Once triggered by a small gate current, the
thyristor allows current to flow between its anode and cathode until the current drops below
a certain threshold.
1. Latching Behavior: Once the thyristor is turned on (latched) via the gate pulse, it re-
mains on as long as the current continues to flow. It only turns off when the current
falls below a minimum value, called the "holding current."
2. High Power Handling: Thyristors can handle large currents and voltages, making them
suitable for high-power applications.
3. Uni-directional Current Flow: It allows current to flow in one direction, like a diode,
but only when triggered.
2
Figure 1.2: Example of a Thyristor
MOSFET: A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a transistor
widely used for switching and amplifying electronic signals, known for its fast switching
speed, low power consumption, and high efficiency. The MOSFET consists of three ter-
minals: the drain, source, and gate. The current flows from the drain to the source and is
controlled by the voltage applied to the gate, which is separated from the channel by a thin
oxide layer. This oxide layer provides high input impedance, meaning the gate requires very
little current to control the larger current flowing between the drain and source.
In an enhancement-mode MOSFET, the device is normally off, and a voltage applied
to the gate induces a conductive channel, allowing current to flow between the drain and
source. In depletion-mode MOSFETs, the device is normally on, and applying a voltage to
the gate reduces the channel conductivity, eventually turning it off. MOSFETs are divided
into N-channel and P-channel types. N-channel MOSFETs conduct when a positive voltage
is applied to the gate, creating a channel for electrons, while P-channel MOSFETs conduct
when a negative voltage is applied, creating a channel for holes.
3
Figure 1.3: Example of a MOSFET
IGBT: An Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that combines
the advantages of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a
Bipolar Junction Transistor (BJT). It is primarily used for high-power applications due to its
ability to handle large currents and voltages with efficient [Link] structure of an IGBT
consists of three layers: a metal-oxide gate structure similar to a MOSFET, and a bipolar junc-
tion transistor for handling higher currents. The gate terminal controls the flow of current
between the collector and emitter, and a voltage applied to the gate regulates this flow. The
IGBT operates by applying a voltage to the gate, which creates an electric field that allows
current to flow between the collector and emitter. It has high input impedance, meaning the
gate requires very little current to control the much larger current flow between the collector
and [Link] are designed to provide the low switching losses of a MOSFET along with
the high current-carrying capability of a BJT. The device is often preferred for applications
where high efficiency and fast switching are required, such as in inverters, motor drives, and
power supplies. When the IGBT is turned on, it offers low on-state voltage drops, reducing
conduction losses, and when turned off, it can block large voltages, making it suitable for
high-power applications.
4
Figure 1.4: Example of a IGBT
1.3 Required Apparatus
i. Matlab Simulink
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1.4 Simulation Setup
(a) Power Diode.
(b) Thyristor.
6
(a) IGBT.
(b) MOSFET.
1.5 Observation and Calculation
1.5.1 Observation
• Power Diode:
a) Forward voltage drops: 0.9V
b) Internal Resistence: 0.0005Ω.
c) Input Voltage: 100V
d) Output Voltage: 97.96V
• Thyristor:
a) Forward voltage drops: 0.9V
b) Internal Resistence: 0.0005Ω.
c) Input Voltage: 100V
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d) Output Voltage: 98.1V
• MOSFET:
a) Internal diode forward voltage: 0 V
b) FET Resistence: 0.1Ω.
c) Internal diode resistance: 0.05Ω.
d) Input Voltage: 100V
e) Output Voltage: 90.8V
• IGBT:
a) Forward voltage drops: 1V
b) Internal Resistence: 0.0005Ω.
c) Input Voltage: 100V
d) Output Voltage: 97.54V
1.5.2 Calculation
Since this experiments were performed using MATLAB Simulink software, we had the flexi-
bility to adjust component parameters and analyze the resulting variations in the calculated
values. There were no fixed, predetermined outcomes.
1.6 Result Analysis and Discussion
First row determined the input voltage Second row determined the Positive half-cycle
i. Positive half-cycle
ii. Negative half-cycle.
8
(a) Power Diode. (b) Thyristor.
9
(a) IGBT. (b) MOSFET.
10
I. Power Diode: The output voltage is lowered to 97.96V after the power diode processes
the provided 100V input. The forward voltage drop across the power diode (0.9V) and
the voltage drop brought on by the internal resistance of the diode are the main causes
of this voltage reduction.
II. Thyristor: In this example, a circuit with a 100V input contains a thyristor. The thyris-
tor’s forward voltage drop and internal resistance cause it to conduct when it is trig-
gered, introducing a voltage loss of 0.9V. This indicates that 98.1 V is the voltage that is
accessible to the load after it passes through the thyristor.
III. MOSFET: In this example, a circuit with a 100V input contains a MOSFET. Because of
its intrinsic resistance, the MOSFET creates a voltage drop when it is turned on. The
output voltage is lowered to 90.8V as a result of this voltage loss and the insignificant
voltage drop across the body diode.
IV. IGBT: An IGBT is a component of a circuit that has a 100V input in this instance. The
forward voltage loss and internal resistance of the IGBT cause a voltage decrease when
it is turned on. The output voltage is lowered to 97.54 V as a result of this voltage drop.
1.7 Conclusion
In conclusion, the experiments showed how power diodes, SCRs, power MOSFETs, and IG-
BTs behave when switched on with proper triggering circuits. Power diodes do not allow
control and react only to voltage. SCRs can be controlled through gate signals but need care-
ful management to stay stable. Power MOSFETs and IGBTs offer fast switching and better
control, making them great for applications that require precise timing and efficiency. Over-
all, the study emphasizes the need to choose the right device based on the desired speed and
control, with MOSFETs and IGBTs being the most effective for high-speed and high-power
tasks. Proper triggering circuits are essential for optimal performance.
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