Electronic Mat. and Dev.
Physics Practice Qu estions (Pre
evious Exam Questions)
1) Let uus consider GaAs
G structu
ure with latticce constant (look it up from the boook)
a) H How many nearest
n neighhbor atoms (A As) of an Gaa in unit cell??
b) C Calculate nearest neighbor distance inn nm.
c) H How many atoms
a (speciffy type) sits oon top surfacce of a ¼ secction (cubic) of unit cell
d) W What is the Ga
G atomic deensity in (1100) plane?
2) Whaat is the pictu
ure on the rigght telling uss? Why it is important
i fo
or Si/Ge?
3) The plot shows energy
e band diagram of a semiconducctor.
a) WWhat is the band
b gap? Specify
S whethher it is direcct or indirectt material?
b) CCompare thee effective electron mass to that of thee holes near band minimuum and maximum.
c) AAlso comparre density off cumulative electron stattes with that of the holes for energies
aabove or belove or .
n band maaximum is ∗
d) IIf hole effecttive masses near 4 ∗
wwhat is the ratio of DOS effective maass to the ligh ht hole
∗
eeffective maass ?
e) TThe DOS ploot is given foor the same mmaterial. Con nduction
eelectron DOS starts to risse slowly andd peaked litttle above
cconduction band
b minimuum. This firstt peak is duee to which paart
oof the conduuction band minimum
m (annswer left or right or
sspecify energgy values givven in band ddiagram)
4) Let uus have semiiconductor an nd assume thhat band gap p little higherr than that buulk Si 1.2 eVV and the
electtron effectivee mass 0.2 tiime that of frree electron.
a) W Write down expression forf occupied electron den nsity at energgy (just usse the
ssymbols of related
r quanttities).
b) O Obtain n terms of efffective mass,, and Plancck constant h bar ( do not care
relation in
aabout numbeers like pi or 4 etc.)
c) IIf , find
d of hole effeective mass.
5) Reviiew questionns :
a) A As temperatuure from zero K to higheer one the carrrier concentration of p-tyype semicon nductor
ggoes throughh three stagess write them with their reespective ord
der.
b) W Why electronn/hole scatteer in lattice, sspecify low T and high T cases.
c) C Compare thee mobilities of
o electron annd hole in en nergy band diagram
d givenn in question
n 2. Let
sscattering tim
me be equal.
d) W What happenns to electronn mobility att very high fiield case for the band diaagram given
qquestion 2. Let
L scatteringg time be equual.
e) F For As 10 doped d semiconduuctor, where is i Fermi energy located aat 300 K for Si.
SSpecify w respect to
with t intrinsic leevel.
