SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3153
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO 900V)
·Fast switching speed
·Wide ASO Safe Operating Area
APPLICATIONS
·800V/6A switching regulator applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 900 V
VCEO Collector-emitter voltage Open base 800 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 6 A
ICM Collector current-peak 20 A
IB Base current 3 A
PC Collector power dissipation TC=25 100 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3153
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=< 800 V
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V
V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 2.0 V
VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
ICBO Collector cut-off current VCB=800V; IE=0 10 µA
IEBO Emitter cut-off current VEB=5V; IC=0 10 µA
hFE-1 DC current gain IC=0.4A ; VCE=5V 10 40
hFE -2 DC current gain IC=2A ; VCE=5V 8
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 120 pF
fT Transition frequency IC=0.4A ; VCE=10V 15 MHz
Switching times
ton Turn-on time 1.0 µs
IC=4A;IB1=0.8A;IB2=-1.6A
ts Storage time 3.0 µs
RL=100E,VCC=400V
tf Fall time 0.7 µs
hFE-1 classifications
K L M
10-20 15-30 20-40
2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3153
PACKAGE OUTLINE
Fig.2 outline dimensions
3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3153
