SUMMARY PROBLEMS
1. (a) Calculate the density of GaAs (the lattice constant of GaAs is 5.65 Å, and the
atomic weights of Ga and As are 69.72 and 74.92 g/mol, respectively).
(b) A gallium arsenide sample is doped with tin. If the tin displaces gallium atoms in the
crystal lattice, are donors or acceptors formed? Why? Is the semiconductor n- or p-type?
2. A silicon sample at T = 300 K contains an acceptor impurity concentration of NA=1016
cm-3. Determine the concentration of donor impurity atoms that must be added so that the
silicon is n-type and the Fermi energy is 0.20 eV below the conduction band edge.
3. A Si semiconductor has doping concentration of phosphorous (P) of 2×1017 cm-3and
Boron (B) of 4×1017 cm-3. Assumption of complete ionization, at room temperature,
calculate (at room temperature):
(a) Hole concentrations at equilibrium condition
(b) Electron concentration at equilibrium condition.
(c) Location of intrinsic level (Ei) relative to Fermi level (EF). Draw energy-band
diagram.
4. Find the electron and hole concentrations, mobilities, and resistivities of silicon samples
at 300 K, for each of the following impurity concentrations: (a) 5×1015 boron atoms/cm3;
(b) 2×1016 boron atoms/cm3and 1.5×1016 arsenic atoms/cm3; and (c) 5×1015 boron
atoms/cm3, 1017 arsenic atoms/cm3, and 1017 gallium atoms/cm3.
5. An intrinsic Si sample is doped with donors from one side such that ND = N0exp(-ax).
(a) Find an expression for the built-in field E(x) at equilibrium over the range for which
ND >> ni. (b) Evaluate E(x) when a = 1 μm-l.
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6. The electron diffusion current density in a semiconductor is a constant and is given by
Jn = -2 A/cm2. The electron concentration at x = 0 is n(0) =1015 cm-3. (a) Calculate the
electron concentration at x = 20 µm if the material is silicon with Dn = 30 cm2/s. (b)
Repeat part (a) if the material is GaAs with Dn = 230 cm2/s (5.31).
7. Calculate the applied reverse-bias voltage at which the ideal reverse current in a p-n
junction diode at T = 300 K reaches 95% of its reverse saturation current value.
8. Consider a uniformly doped silicon p-n junction with doping concentrations NA=
2×1017 cm-3and ND = 4x1016 cm-3. (a) Determine Vbi at T 300 K. (b) Determine the
temperature at which Vbi increases by 2 percent. (Trial and error may have to be used.)
9. An ideal silicon p-n junction has ND = 1018 cm-3, NA = 1016 cm-3, τp = τn = 10-6 s, and a
device area of 1.2×l0-5cm2(a) Calculate the theoretical saturation current at 300 K. (b)
Calculate the forward and reverse currents at ±0.7 V.
10. If αn = αp = 104(E/4 x 105)6cm-1in GaAs, where E is in V/cm, find the break-down
voltage of (a) a p-i-n diode with an intrinsic-layer width of 10 μm and (b) p+-n junction
with a doping of 2×1016 cm-3for the lightly doped side.
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