Southeast University
Department of
Electrical and Electronics Engineering
Summer: 2024
Course Code: EEE448
Course Name: Nano Electronics Device
Experiment No : 01
Experiment Name : Design a micro-scale NMOSFET with
Silvaco TCAD and simulate the doping profile of the structure.
Submitted To Submitted By
Dr. Habiba Begum Name: Dewan Sadit
Lecturer Id: 2021100510026
Department of EEE Batch: EEE 11th (Evening)
Experiment no_1
Experiment name: Design a micro-scale NMOSFET with Silvaco TCAD and simulate
the doping profile of the structure.
Objectives: The primary objectives of this lab report are to design a micro-scale
NMOSFET structure using Silvaco TCAD and simulate its doping profile. The tasks
include defining the NMOSFET parameters, layout, and characteristics for
simulation, utilizing Silvaco TCAD tools for accurate device analysis, investigating
the doping profile within the structure, evaluating electrical properties like
threshold voltage and current-voltage characteristics, optimizing device
performance based on simulation results, and documenting findings and
recommendations. Through this project, the aim is to gain practical experience in
micro-scale NMOSFET design, simulation, and analysis using TCAD tools,
contributing to a deeper understanding of semiconductor device behavior and
performance enhancement strategies.
Theory: The theory behind designing and simulating a micro-scale NMOSFET with
Silvaco TCAD involves understanding the principles of field-effect transistors. An
nMOSFET (n-channel Metal-Oxide-Semiconductor Field-Effect Transistor) is a type
of transistor used in electronic circuits for switching and amplifying signals. It is one
of the two basic types of MOSFETs, the other being pMOSFET (p-channel MOSFET).
Software name: Silvaco TCAD
Code:
go athena
line x loc=0.00 spac=0.10
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.5 spac=0.01
line y loc=0.00 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
init silicon c.boron=1.0e15 orientation=100 two.d
diffus time=250 minutes temp=1250 dryo2
etch oxide all
diffus time=50 minutes temp=1000 dryo2
deposit polysilicon thick=0.2 divisions=10
etch polysilicon left p1.x=0.35
diffus time=10 minutes temp=1000 dryo2
implant arsenic dose=5.0e14 energy=50 tilt=0 rotation=0 crystal
etch oxide left p1.x=0.2
etch oxide above p1.y=0.005
deposit aluminum thick=0.05 divisions=10
etch aluminum right p1.x=0.18
struct mirror right
electrode name=Gate x=0.50
electrode name=Source x=0.10
electrode name=Drain x=0.90
electrode name=Substrate backside
struct outfile=mosfet.str
tonyplot mosfet.str
quit
Design Result:
Discussion: The lab on designing and simulating a micro-scale NMOSFET using
Silvaco TCAD involved key aspects such as designing the structure, simulating the
doping profile, evaluating electrical properties, optimizing performance,
documenting findings, and gaining practical skills. Discussions could focus on
design choices, doping profile impact, electrical property analysis, optimization
strategies, documentation insights, skill development, and future applications,
providing a concise overview of the learning outcomes and practical implications
of the lab exercise.
Conclusion: In conclusion, the lab on designing and simulating a micro-scale
NMOSFET with Silvaco TCAD has provided valuable insights into semiconductor
device design and analysis. Through this exercise, important principles such as
doping profiles, electrical properties, and performance optimization were
explored. The practical skills gained in using TCAD tools and understanding device
behavior are invaluable for future semiconductor projects. This lab underscores
the significance of theoretical knowledge in practical applications and highlights
the iterative nature of device design and simulation for enhancing performance
and functionality.
