Semitanduekoy ae tha intemediatea oy canductou and intulaton.

Candudance

tethavalent
AU semétonductos e
Semiconductoss ’ Si Csiicsn) and Ce (oermanium)
baenk thee
Jith 1in temp., ahe incea es as due to heat let banda
ee elethons a btai ns hich heles in conouction.
valene Band

Enerty
Eney
Energy Level Energy Band
Diagram Diagram
Si atom

Valene Bond is the range enegies posessed y valene eleehena

the range
Conduction Band is to engiea poes sed by condung e (fae e,)
om O o. Tt ha range.
It extends
Conduction Bandd

Oev
Energy aortsidden Energy kop)
Valence Band

behen the
ferbidden Eny bap u tha dileane vadence e Cnesiea the leat excited
the
e and met exúted
 * fo Condu cto
Eg is vesy lo).

Energy V. B

fes Iheulatos,
E is vey lasge
CB< üe ait illed

Energy

* fo Sericonducos,
t s me dlate
Enegy

2
n

k lhen temp. e gemiconducto i ineased thevalene eledtons gain enesy and

so, te foa bidden enegg ga4 and hene
kene valens' band ahits pusandu that
resistane diferene, ie, we
can duction semicendutey
jnteaeA hen it is heated.
 Semi -Conduckos.

Ca) Puse lenicenduc tos / lntinsic Cemi conduton as obsewed to hare less
tonduction as it hes no chage.
Valence elechon 's enon
negptiue
bound state

(")
enkanes c6n ducion e pue con ductsu
Cb) Imegus Semiconducto Eethincie micerdustes
awailab le in pus canductos,
fon tia to hppn, t we must make hee charges
This is Lhy ca pune (onduetr is doped.
is the proes addton impwities in a pue semicsndu ctes

d) n- type semi- condu to.

n
Pue semion ducte t ertavale impuity
suitablé sine
Impurity atem is taken ppm to Si atom

p
Dones leve

Si
 (ii) p- type semi- conductos
Aune geni esndu cter t Taivalent impuity Atem

Aeptor lmpunity fHtom

J
e del icied covaleit bond hele

Accep ton levet

In a pua Qemie onducte ie . n. deneity eleettow is same ca the no.

dencity adle,
n, >>> ng
ng> ne
Conducti on in n is de to fhee elechey
is dua to heles
Conduchon in p-ye
higkdy unstalle and-ignte thn hdes .'So, tey ane bug hy melaile and
bote pevida hettes eonduction ,ie, n-type st. is much bata
tan p-type St.
conducing
 H-p/ L'.

E e(ni,t ngV,)
OImp- Deivat^]

E Trih lo
Deivet"
4 na

e (n, u + ng ua)

an ntye e-.
e n, de

fos a p- ty ae -c., nsne

Aman4 gemaniwm and cicen, Be has leses abideen eneyy gap stl ciliccom a
QSemi- conducto because cilicon can telerate a csidas range e tenmp.
dheapa.
* Bermarium is moe seitve o change in tenpratue than cilisn.

bo- inkingic caier (n;) n, h,

 junchoon Disde
diade uu
3hen a Pype and Cln n- ype semi Londucta is ioined, a p-n uncbon
fotmed. Tie an oimed duy a prepet methed knewn as AuogingSC
fetmation:
then
When a p ype and an n-type Semiconduo is jolned togethes by aogng !
This is
and hole from p- type mee toywda euch othe.
n-type diuion twet,
Khen as te cent her is knesn es

elecdhes frodm n type semitanduta cross the junction and men to p-tee,
Ackually
elechews geing
reuding te the Jotmatian o peithel chayed ion (dona ien,and negatiely chasged
hem done impuity atom necs the
impuity atom tho n- typt semi condudn
impuity heas t e
igns (aceatey ieus) electhens acgked by hivalent acceptes
Ppe lemisnductes.
ions is amed neo n ype and
Hene
p- type semiconduc. rekpekively
This hogoen anet intandanebuy and leads to oamaton
(a region , shere thehe as no elechos and heles.
Depletien region abally when compahed to the sicth n- ype
y thin

and p-type semi conduton. icth

ey ans shasn to haue sem
Stul, fer the sake o conuenriene,
Deplekon Regien a Time

Lidtth e deplefion region is cppvox -’ 10 m

 Dicde
source aess a pn jnction diode is
lhe phenomena e appieatien a DiC.
Knoon as biaaing

* fosand hiacing
seusce ic (onncted in cuh way tat the applied Ef. ppe%e4 the
T! he Dc
fietd in depletion region , dicde is ond biing
eleckie
[oaJ
conneded te ptype nd -ve terminal
D-c: sae is
De Sohce is cbnneded to n type.
diode is led biteing biescd.
03V-Ge

|Depletio 07V- Si
Reiont

Tunctioh
ptype
hee
it
boiage
Vellase

V(appued)
inatant)
V:(R is appicahle thraughot pheceu Cat eveny
shen losasd hi ased is le than
bhm lauw is net applicahle,
Heeves,
bussiea pdttal.
Hasee,
olm's lew is applicahle fo asand Bía, beyond Baaies Pettial.

(practieal POIA)
Aelos
secaue
loMe
e Ideal PNIO

harin

V8avie
Diagrarn ot torsavd biating
Knee
vdtaye
 hen a diode is Jaaded kiaaed, the negcie juacton at te end n- tyee ge
atcele aded ahle to cres he poteutial basrie.
eleuhes in eheaye and they anehe able
Eleckens mone fom n- type semiconductou to pype semiconductes.
Hotion o eleehons in n-type semicorducos in the moien o cen ducting elechan.
Hawewe, thei motisn in p-type is the meion o valene electens.
And, then the e tominal aseu p-type eutacts the elechons hom ptype, shieh

Lshen the applied potetial is lees than basnies poteatial paacicaly, here
exict ey Amall cnent
Cuhent the vei aton el ii and VV is n t ineas in this
Cae.

shon applied potett al eceeda basie poteutal ' vehien lineas with 'v
Conductos.
By tho applcation g ad bias, conductity and conductien g diede
ihcseaaes and heno its reistane deheases.
decreoues
So, uidth depletion Zone

* Revece Biaing
Shen He appi cation el a D-t cUsee p-n jundtion di ode is sueh that
it Auppeh Hhe elechic eld in deplekion ren ion.
COR]

poteuial) is (onnected to p type and poitve tem

Neqdi ve teminal ( lo reee
hiuing
teminal (high potential ) to n
n tyoe
lou conddion c6 reitne is
revese ctr bíaA,
inheased.
Hence. usidth e deplekon veaion
pn jndion d ocde, shen ve reuesce biosed, tue teAmina hsl d ele tcuy in
H
ceniconduta and -ve teminal helds the holes jn p-type sc..
n-type
Thee is no condution , theorikcaly
upe ae feiltaded
Hoceves, the minoity chaye in n-type Qnd p-( Leu) cuet, duu to
reveie ,S0 thee is noinal mineity
taries Cuhent).

LShen verelse Biad volBage rehLe veltage ia

inveased, then the reese cunont is almet unalteed,

L9hen veese dt bias ,is lnueased to Such cen eteut

that applied elechic ield is inheas ed to sueh a praea

high value that emissien take plae.

Tdeal LuA)
Due t ield emissien the covalent bonda the semi snducte, oIo
baeak, and a lauge ansunt eh hee chage is pro dued.
potati al, ot shich thia happeus is Renesse Breakdsasn Pstential (Ve
Ihis laye amaunt hge nd Cuasnd
and ena mGuy and tta dËede is
incteases enamzudy
cunt inceases
spudt laees.

Diagram Por teverse

hioting
 Amp.
cally). (paaáti din vey
2)
www
K? AJhati BULO)
fiation. tolead and amakeuit dliode pextey pro This
[Link] reuesse shen condut doseint diode ideal An
,henoad
biesed conduten a
a behaue diohe A
hiued. ei foasd conduc,
hen An
dicde ideal (bmdusion:
(ua) i
vlkye)
(Banie
reakdeusn CRevence
B
1;
Diede Junetion p-n a lulue(haackecic -V
 300.n
.
ww
A
312

.
Reading
2 10, 2A
4+0+
A

0. P20 Wat

202 43 i
D
20
SV 43
(iT Hake I prd
graundod
. ?
liiy Diod
SiDiode actsdinglyov
(Varo)
skhe
0-7

monapheue utput
an to daicea shich ane wed to cenvet dual phose output
conyet A-C- into pisating Dc
tanlomer preent to reduce the ArC 9 sui Coneni ene fivst then reifeu
Tersi changr it to e.

S Duing tue
P, -
www
P, te S. -ve
42V
T220v
AC
biaed
S Diede canduts
but put is ohtai ned at R,
AStep Doan Tranfome P, 2 +ve
The suthut thtined here is not c. P -ye
DA has AC compohnt
pus tati ng o.c 2) disde does not taek conduc
 Ralxcting
a-c. ie
magnihde Vaying
but direct fiacd
condu
ce hene hlased, loscad Aiisoda ’
henebiaed, revesse is(A) ode
onduct not doeu
2e P
tVe S
2-Ve S, "P,
qde Duing
ete
condut not ose hence blased revesse is
(O) oda >
cenduct hene blased foSeAd isC9
Diede ’
te P22
+t , P,:-Ve
2)
Duing
P P
6000 Input
+4,0,
-4
t6,0,
-G ulohe ohich
main patal hog ikhu /606 qo5
* L -Ater

difes (1nduto)

ww
(AC+n)

* Le filte

(Inducte)

* J[- Filtes
(Ac'4aU
is dglined aA the ratio o ito utput cuuvent to input cuent and it knosnas

, 1ghene P Peees
Pac

Hainum rehfie 406%

in which eutput is otainecd any on hay saue 1-e
is rediied is called ha
ay auee rechles.
Heinum iieny aue veck{ies 8i- 29,
Lome other imptt poi nts
Ap-n junchi on diede conducs when dowand biaseol and it dsesnt conduct kon roveue
bioed Taia vesaile behauisu
biascd. a pn junt ion disde make it Suifasle t t
alteanati ng cusot
* High velage K9ac dcho Qos veltugo ac snata hai ckep dosn tansfane fr
vel tuge bnate hai recti caiodo and ites (apaite) il he.
Inducto lLs laul hyheta hai cioald ueuits nain wse nhi ho pata
Best i u Tt hota haai
O. What is p-n jnton diode (cerel
Caiess taeugh the junton o diode.
9. Whot is bioA ?
Exkunal appied veltag is caled bia.
6. shat i spaee chang region? vegion.
Depleion regiom condaining nmobile ehange is caled epae thange
. Undeu what couditi on dose a (enhon diade snk as open Cuoiteh ?
Yevesse bíaed,
A juncion di ode e ka as open csitd when it is
0. Sistinguish beteen fosead biang and reverte hiaing g junetion disde? (cass]
PoRMAR D BIAS :" Posiine emi nal a battesy çA conneted te p-type and agatire
taminal to n- ty pe cemiconductes.
tin.
los veaistana
p-n junchên ofe vey
" An ídeal diode have zee reaistana.
BIAS: Pesihne touninal e batHey is tenneded to n-type and neg ative terminal
REVE RSE
t pype kemicondute.
Depleti on loyes is tick
high reutance
"p-n juncien oer vey reaistane.
An ideal diode hcure infinite
9. Diseuss tho fomatiem pn jention? [cece
In Imp. Point
0. Explain the fomation barien in junction diode Ccase]
de pletion regien and polediad then
to meue tosan da th electon there is {samahon tho dayen
Whon o hole etat
e electheA on th p- tye and a layes e hsles in the n-tye side shich fosma
region daplekin layer 9 ragios, thie depletion Laycs Ís to Cauae

poBential baaies.
0. Why is tho cusant wndes revese bias almet indopendent the appied potential upts

In revene bial, the depletien layes bebMs

hasader shich eu layge oppoutien to tha flew
csies. In thi cae, cwsent is cue to themaly goruated minoit cnat
csies, ohich ae independet e qpied. veltage
bakdas.
A. Nome anu cni eonductes deie mthdch Gpe des unde the reverse bies in the
rgien)
Zene diode eperatea in revesse slas in bteakdosn regien.
8. The tesi stan a pn juntien diode deueaLeA shen fed bi ased .explain shy?
biaacd , th width
feoand biased
When pn Junchon is oOAd deplefion layes deneGAe, and tke
4da, pototial
the fesyd bias . In otheu 04da
éppeued by the
basies poBential is oppsed
havies decreoaeu Heno, the difuion holey an d elechona thh sugh the
hena nistane
nton inthcaes Due to thia the diode Cnt inheDAeA nd
denaases.
8. Explain shy theAs is a vey emal ousent athes tae juncion, Shan a p-n jurtian
disde is revesse hiased. Doea it depend on the applied oltage ?
Lhen p-n jn ion is revS Se blased, thor is a emall cuhent au0Ss the untion
duo to minouty. Caies in pand n- regiona Those minity auos eiers
difue trouah the juncton and consttute a small eurent. These min6iky
the
umbe in veas es orth
thamaly gen eaated and theiä
inchease 4tho tonphatue teo untisn . Tus, the magritude o thia t
u t inccases wí th tho inGease inh tmpato o junctfon diode . Hoseues, it
is independent tee aplied vetage
0. Sugget aUn idea to Anvet a ssane shi dge reciier
by dhanging the cnnecting sire ls.
Discenneding ire s8 that ceLsnd di ode delunct. Tken, te remain ing iruit wi
One diode
rehfie.
khy pn juntion diode i. highly csent censiie
Semicenductoa ase hig hy tompsatue gencit e. shen (wrent psea thheugh
diode, it preducas heat. shen a lange ameunt e curent passes thseughheat
tho pon junien diode lange ameunt heat us paodued. Tis lage
(an damage the diode. Thus a p-n juncion dËode is highy cuent sensiine
device.
ansthe
9- hn ae take one clab ep ype semi conductes and phy sieally join it to
n-ype gemúcondut to get cannst
elabjoined end to end
Tws independent p ype cnd n- type semiondutr
a p-n jundien. In ad, an atsmic tânnet contact is reqired hetveen tte
semiconducteus. Even tha mod cmoethly polished
Suaes eP- pe and n typeeach othes have Small aaa tondatet. csntact.
Cafatas shon preaed againt hare como vey small dust panticles
Hevelves, ewen the mont den auace t maytome in atomic
sich de ngt allsa the
Contat. Thus, shen
and n type Cuyaus ao pressed ag ainst each
othe, thee wl bo
p- type
cawiena inin p- and n-
chag
dit entinuiky e ts exchang just by joining P and n- type
regiona.
So. p-n junction cannet be oned
Semicon du tos.
O. T09 sc matejah X and y shon in tho given i e doping
seric reapeci vey. The tso o
qeamanium yctal with indium and [cese]
joined end to end and tonneted to a batey

mateil X is do ped isith in dlum (a tivalet impuity) , so it is p-type

ç) Sinu. pentavalent impuriy),
Semicbnducto and madeial Y is doped sith asse ric ( a
n yee sc.
A p- region is conneded aitth athetve teaminal e sattey and n
is

Cônnected with a -w teminad a balhesy, so junction is bíeded.

matoials Aand B ehoen in the gu s made hy dopirng

8. Tuoe Qemicondut
cycal with ahsenie and in dium rupativey . The boo ae joined end
gemariem
to end and conneded to a

(i) Sktch a Vi qraph fo thia aanemant

ú) Hates ial A is n-type and mathialB is p-pe SC
ts n-regien i connected to he tie
teaminal e the baty and p- region is
Cenneded t0

is cavben not an nhinsk Sc althouah it iea in tho ame group peiodic

table aA qernani um and iien) [Verg Imp]
hetoeen Hhe valene band ee and conductin band
Tho fobidden eneigy gp
caben is abeut bev. Thus, lauben is almest an in Qulat t noumal em.
"Te volenu e, in coanbon ae in cesnd obit ,in silan in taird ousit ond i4
qu manlum in Joth obit. Teri zaten eneyg needed il
han Si and Ce case o Ge. t me that the hA.
in case Caubon he alnot nid
So it con not he onsidered as Semi candu ct,
9- Explain the metheda daping
into teo hiqgh
"A vey Smal e quantity impuity atoms is made by ouffust
punity melden mateial such as Gee
Impusi ty atens can aae be addled into the intinsie St by heating
environment hauing impuity atomu,
Lmpuity otomu can alae be added into theinhinsic Sc by bombonding i
with impuity atem.
9 Exploin the chonaenisties o dopart.
Lize e the depant atom ehsld he neay eaual to the sise e the adom

" Ko- e dep ant ctems sheuld he abut one in million g paen atems e he
intinsic Sc.
that it does
Additen e impuity atoms in the intin sic SC cheuld he cuch
change the bic Oyatal lattiue t the ceniconducto.
not
6- say is a semiconduten damaged ky shony
Jhon a shog is applied Sc, most o the covalent bonda bieak
ond the danaqed.
Choncteristic o hsle ?
" Hole is Gqyuivaet to a +* electhonie chage, ie, te
" Hole is massive Compahed to the election
Hoiity holeu ic les than that q an e

fn mahing te deies ? ay
gilicon deuiua praleod nos
ci
Ge even at lono temp. is much moe thn the conductiih
Conducivity is Les in Case Ge and mts in case si , so Ge
The labidden eneg gaP than Si.
conducts electic cwrent at leser velta_e
te is much cen titire to temp. chan qes than Si .
Ho Moneoves, silon deies
no.