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Solids and Semiconductor Devices 2

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0% found this document useful (0 votes)
10 views2 pages

Solids and Semiconductor Devices 2

Uploaded by

Simran Banga
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Semiconductor Electronics-2

Rectifier is a device which converts alternating current/voltage into direct


current/voltage.

P-N diode as a half wave rectifier


principle that the resistance of p-n junction becomes low when it is forward
biased and becomes high when reverse biased

Working: During positive half cycle of input a.c. voltage, the diode D is forward
biased, it conducts, current flows through the external resistance RL and the output
across RL vary in accordance with a.c. input.
During the negative half cycle, diode D is reverse biased, no current flows due to
which there is no output across RL. Since the output is pulsating and discontinuous,
it is overcome by using a full wave rectifier.

Full wave Rectifier


Principle: same as above

Working: During positive half cycle of input a.c. voltage, upper end A of the coil is at
positive potential with respect to centre tap and lower end B is at a negative
potential. Diode D1 is forward biased and diode D2 is reverse biased. D1 conducts and
D2 does not and current flows through RL.
During negative half cycle, end B is at high potential with respect to A. D2 conducts,
D1 does not and current flows through RL in the same direction.

[Pulsating dc output is removed by using a capacitor filter circuit]

Light Emitting Diode (LED)

• Operates under forward bias


• Heavily doped p-n junction
• When forward bias voltage increases, due to each recombination of holes and
electrons, a photon is released at the junction emitting light.
• The wavelength of light are depends on the band gap energy.
• Intensity of light emitted is directly proportional to forward current.
• Range of band gap for visible light is from 3eV-1.8eV.

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