SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
DESCRIPTION
·With TO-220C package
·High collector-base breakdown voltage
: VCBO=200V(min)
APPLICATIONS
·For power switching and TV vertical
deflection output applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 200 V
VCEO Collector-emitter voltage Open base 80 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 4 A
ICM Collector current-Peak 5 A
Ta=25 1.8
PC Collector power dissipation W
TC=25 30
Tj Junction temperature 150
Tstg Storage temperature -45~150
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V
V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V
VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V
VBEsat Base-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V
ICEO Collector cut-off current VCE=200V; IB=0 50
IEBO Collector cut-off current VEB=5V; IC=0 50
hFE DC current gain IC=4A ; VCE=5V 20
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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This datasheet has been downloaded from:
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Datasheets for electronic components.
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