ied Eiece Traestors e— Si Ae teas ee Ee Te feo Be cay eet hich the applied elecksic fil _ | Conk ds the eee PO ie ey __| voltage _Comctyo lee device __ such a__-transiste cthert 12 evley— Onn. aaa majority. Charge J ayriers , e% ox holed .._50._f+_is _Qlso Callek 73 rae tor... “These __-tramsistox axe bo oe Junction FET (TFET Gh) tnsuhated eer FenaiPevis — ee pees Hienananas fsa Ne an Bases: _cloped_ | exansistex bax Sts ends. _ave highly coped _with _ il the Same __-typ2 —Of— thon pustity amd _—_Ohveni ¢ ee | Conka cts —axt__atteched— tn theses Tpit is N= t 2 rduckex baw —=then._it—is-Calted pgthanned: FET and _if.tne > bax «ks. __P= type onthe te Isla P= Chamned FET. The tex minal Sibi face eceinaeele kCalled. Source 'S’ through. L_bikich majority Charge Carriers. etter ewer. tne FET anch thes dermimd’ at -the._other leek Is _k/a drain’ “through Which. the. — Lymnagjoxtty Charge Carvers eave it. The wo opposite _ paces. Abie boay i the Jar dixechi@n.aie hel doped with opposite Kind ob: tosh forming me gate fh. fn N- Charmel FET aye heavily oped yegions p* form -tne aah nos jt l N-thowned cae P-Charnet Se Csi dhingrams n-channel FET is Ter hel by Symook. The arrow en tne gate Shows the ating, Sb Curse if a forward bias ts applied by and Source s. noe ie > [c_op =the reverse bigs at the PN Junctién t mad athe Chanrel oliplection rg%¢ o oa = - | axe_ceweloped aoa bath Sickt$ of Channel tr 2 en 5 Wich _-thert _@x@__ ne. /pree charge. Cantiers, Neghamneg |S i | ——-but__inmohi fe charges get accumulated . Pnchawner Bemween tre oukput terminal D andl S 4 voktage Vos is applick in such a ‘bolt tse ba mevense bias the thickness of thi | daplectton region Ieee. Dus te tee in_voltage- 1 précnSownce. 5 _-t. Dyain D. tne veverse—_bais | also Ise amd _-the thickness of daphection- | replen_tses Sto that the eppective width oy | -tnannel_lses. Thus with 2 constant _clraiv- Sour d the _gaxtt voltage. Vans Contrale ‘the .typectrve _widtn of the Chanel. 4s red \cthe domain _Cucrrent Ty fs 4 penction. of Yas And Nag Fn_this_ okevice tne. contro em drain_Cuntnt Ty is. by the extension of oLipl Chien region —in Whitham _.E-f._[s_genevaken, 2a cee i SiC Veg = +ye. Gl. — Ene gebba M 4 aond tie” Soutien, So voltage is appl in pon a Way that the PN- Sun coon forme? bhi pene Be VENER B Fastin THas asin). on Cae ; ; 2 mm a. : ihe a is - A ve potentml wrt tne gourte - PE Mats 538 Sa P- Chiannek JFET Gre opposite ye. “ve and \, te — ‘ns = E SE ee eeeby the bound charges This duple chien Vege oy EvC. Leptnds en the reverse bails. That is why tyes divice ts bewmed as FET: Dur w reverse bias ak tne Source gacte junction Current in tne gate Zn is very Smale (UA) so the Mmpat vesistance of TFET is quite Darge 3 z ©) charackenistic Curves + Sa the Seurce- clvain Crea Ce TFET tne output or dain Corrent Dp chepends en the otvain voltage Vrs and gate volkagt Vig WeWt the Source: The dependence of these quantities em Cath other Can be verted by High Curves Callel AS Charackihistie Curve of FET- Keeping tne €errre verose bias voltage Vis of gate Constant, the family of Cures Showing tne cLepenclomce op Avain current Tp en ferward cdeain voltage Vor are Cited as Common source olmain Characteristic. IKeeping the forward drain Voltage Vos Constant the Cueves veinting tne dependence of atram Cumedt [Ev en reverse gatt voltage Vus are Called Transier” Crave ceonistie. U) Drain _Chavackes tsties :- Keeping tne gaktvoltage Veg Constance ip Curves ave chrarwn bho -the -ouded — arent 7 drain- source Chroutt and hvala then a family of Curves, ae obtainel. Voltage Vos en forily "b 7 Dig tppctateed fox clipy. Constant gacte = Source axe obinined My Vise 54 o 1S..20 26 : i se Vg: (alts => These Chavacteristic [Link] ve divided hn Begins () Resistive ow Qinenx region i- Which occurs fox —— Salt valiced of VohRAge gs which =the In — Current Ty is ntarky proportional te. -the voltage = Me and -the Channel bar act as Like 9. Simple Tesistor, Lb) Safer ation Ragin Jp xtmains—neaely Constark |e, the dependence of Ty on _vallage Vig ig -repbigible Sete This state the Linear regime Fn thie As a Conseank Carred Occurs apter region the FET acts—$—$— $$ _—_$§$_ Source oper 2 sujgicier® romge op volinge Mis. Mt the boundary of liner yogi and Saturation : 3 tne Value of Vos a& Which the InGrease im Ty Sty Taso volsap el! os and Ty appreches a Constant value, Is la Fine of Best para chants. voltage ge Is diggicult to covrectty define amd assig O diginite valuc por tre pinch op voltage. rhe tug Value then is manimum Contraction Of the chan? n tie drain od above this veleage te Chenel wee ot Closed but tne Dength of Constxicttd channel tee, 0 that the clrain Current oloes not tres ‘s-1 3 2 tO = here Tose is that. values of Sotevabion Current Tre. Spee | 2 s | Vos = Ve Mos > Vp ak Which the gate is _sheriect ©) Break ~Down Region i- Tie mani veltage + be 4 7 = This_Cux ve. Shonis_=thak... por__a__depinite Yevirse bias voltage... Vhs thé Avain_.Garrxen& becomes pera: bly dyain ane source depends en the byeqk dow op tHe reverse piaser PA Timekion. This Voltage i | > — This voktage fs Called Cuts 06g voltage. tt Vas20. Calted alrain tp source break- down veoltige: by applying the pond Where _-the__tamgenkial fine cus. tren A valtage more than this is ‘he output cusrent Tes by — — Mig amis, Mas > 2 Mela Trang this anetnad also fq barge Amount. This region of Vos is Calted? tovenkdam the valliat oy. Vp. — Ga be__ le tefirninech —(@) Opewadtoral Cmstanks ab I FET I= region: By Tsing the reverse bias Voltage Vas a tht [breakdown Occurs af 9 farge Lesser voltage Vos ie the break down voltage Uses. Output Current xp om HD Transper chavactentstie 2- Keeping tne obrain voltege Vis cxain voltage Veg nyt the__Souxce Carn be. Constant in the Sakusation xem ip the drain Current xttnted 9s és Tyg ts determined for disp: Values oF gate voltage Var and 9 graph is plotted bl) outpne Grr Tye amd or memee vam Voliage both ave Jp the gate volinge saute be obeat nant “a nin tne Change Tn Zp oT by Taytow Sertes. sdecovedingly 85 = WB Svs +H Sie —@ Mes Me Sk the vaviekions In Garert ond voltage mt Written Sie ly, Mes tVs + SMar 4 hen i = 25 voy + Sb Us Mus Vs ( is Yate Cf chemge of drain Corrente With a 2VMislys in gate Vvelinge keeping cba voltage Con a 1 wantity 15 4 mutual Conductans 7 Be) quantity ts Calied dual conductance oy Lrensdan is wemizd by 2. ; Gn = (2) mn = —@ Ms Meg ( .) fs vale of change gq ctrain Current With Gmnge Me Ans in vebinge Kecping gate voltage Consent Thi's pavametss is drain Conductance. ond js ine recipnad Ob train vesistance. Jp CUAPHE reCisimce js Yebntcol bg %. wee Ee hb aM) 4". (2 Sa), —© Moher “e | Te fox Confain Avain voltage oe Change ie gate voltage Vas Causes a change § in clean Current thin Mepig Ving Constart ang -ractio of change in voltage LVig) xequiret to ammut the change in drain Catt | ip ane Vas is ee ea “+ FED Bem) elvan otrain og wade ge Simply by The Cansitants. Vite Grr 0 ddd mr — related ME Nb tn the farm — of — Soave rrrtntioned — (epeinatsletine at Gm __be__ borin as... += 2 Gon Veg+ fe le. tbe Cohetate tae pinch. xernting the. Cherme£ ina —an_spmenieegt ae pon Sebati gion a Pinch_ofvablage: ASS wernt sta pa tyne egion | is chepect hth Alp ACC epiny_ pee Cubic meth. 2 tat ni stypexegima is _cloped__btion Jp cloney pew. — Cubit_mettr._S__is__also assumed that =the 'Cnamine £—tuieloth atthe __etrain __abses uni pormby— as__-the reverse bias _Tses_tn__ pinch. ofp Tre — Reverse __bfas War the gate 2 stme_rain. is taken 98 _=Vop Using _poissen’4 eq _ ot 8s ayWere E is absolute peveniieity ay 2 -UMntrGg —E an : a nee, ae Le Omnel FET P= Channet RET | The Current Carriers extes| Current Axtiers. ave > vy O ay Vr — Bb at K=0 Ve - Ob fwd 7 F HME nak, the widltn of diplection region WIS giventy Wins) = p2ev 74 i 2Nb. 5 AW Pinch oy occurs ae the ean end of the Chemel Charge Careviexs eines _| ee wren b (mst) = a-W (ast) 20. mk piven ofp rif — Looted Comsribute | we deine tne as ob VY and as Vp ythen | in rte there fore. 1 -@ | it is a unipolar dhivice-| eas, Bb) has -three_teeminal | | Vp > Ga°ny t Af. Miz > Onaitter, Base. A ad : | CoLtectore, 2 This is expression fox pinch. off voltage. .: == pl FEL's have __a_Very lerrics paced Josie -high_i/p__teapedence. innpectemce.. Comparison of VV & P- Channel FFETS~ yl So CET Charge Carvitre| Sa ArT. Charge a Caste L Mae to. Cass__tr0 junctioy + lene Case. Amy. jnTso ie fs noisy Cue ren€ theepre ie tg L155 MOY vo Gets a vokkagt Controlled SL is 4 Aawice Ws tle voltage Vg | device rin Which op Controkd tne OP: Cavin Ip Te «is Contrvitel by tp CurvenE Le 4 | shrews thernal ram yi FET cleesn't Show omy ( Mermal Yumnlay thereyore temp. | beause Hs temp. Cooggi coepiciowt op resistance is ve lay resistance is ve. TH, Thus its trmat lability is [tne thermal Stability good. BIT's Is poor. yh Iramune te vadickions | sensitive tw tadiations. ewwhent gain (ou? be diffnel) Current gain fs 4 KH ts neae about Infinite | Ze Fe bie TP pa junction is reverse biased. so iP Current is negliginlt. So Garent gain 15S hign. jy Move Cosy than Br | Less Costly Trams Conductmet ts Pow | Tramsconductamee # very FR hence voltage gain is high se the voltage gain not Large is high wi Mae very igh yp | Have fod i/p resistance wes isancs. Tre main disadvontage of tre FET Is relatively Sati gain ~ bend twit product in ComParista with the By T. There are tw Depletion Mos FET Enhancement Pype_ most the voltage 9pplied bin only —Gahance.. the is _Kla moskET -the In the Construction bu they are Voltage. Vag» These re. Of two due to. the Kernels N-Channel € - MOSFET P= Channel £ = Mose r- a Here_Wwe A Construction - 4nan__W=thanneh ros ET. | meta onide _Serni. conductor elxain EnhanCemen€ type mosFET mie_channed A P- Charmel Ave. 9b FET (mosF£ TD3~ - je: “ep MmosFET ov D- MosFET ET. ov E-MOsFeT In this mosFET. Enhancement type (MosPET = gat, & Source Can Curtert Te, So it In this Inclucect will oliscuss am n- channeh E-moster ‘ f Pope St Loe ——-there_ are _+wWo highly doped!) —[Link]| oe Source 2 _otmex_clrain)- Ona. Lightly Loped Pp type. £ Subseyate 74 4 [2] P- substrate7s piace OveY te now One Ane insulating sid, dagen 9 gate fs foormod. th Apert tevminal fey Source, gee R drain Oy Lee hese o. ¥ i oe Dee et fag bins gate and tna > all the majority Carriers Chobes)| vide ign fie Wropelinee: Tie ented avant & as “ fee ee aie ck P- Suostracee ave -repetedt alt. Of FB - me ae ie wea nist tthe Insulaking ielectsie | minority Caxrievs. er Gre attracted by the nid at e a Chanel, pornos @ Mel dieluckric ayer So @ region is induced tdnich Plat Capac ; Tae aed Sayer of Si ig te _ is vith Op es ueth op nokes. This. wegien Resor Wny tons alivice Is Calted “the Fnsulated — gata behaves. as. inclucecl. n= Channel. Mew) .clvain bith eppece eaansleee . _ Current... strats plowing thigh this Channel ae shai fox Lower valued 6 Vins -these. © _Gf_11-Gemek A §cbsteate D_seesvete. Fl : v 2 domot.._blow..& Current. remains ger. = bnegtiginle) . tnd as Wo tse tre _appliiect | voHage Vas Upe:a_ pavttelté — particular. Value | mek oS PS i chemm ees ete ap then Current begins to. plain This. partioular applied blw Source vain in A Eeotia Gaede ey on . Value. % Vos a Which Current Ty Seeing Ay ould r Ta —~—— plowing is Kla_--threshold veltage . Seis. og — move prem Source t olrain. 5 & <1 ordi of 3 volts for St rs Riso a biasing Valtage is 1 A a Now. en Keeping Vas Constant above “the lapptied bilw gate 2 source in eb = = fe -. thveshehd Voltage igre fhe Vos. then chick Quan coment mode So, the i epee vill oe 4 _weverse las of Pan jumetion. blvd Suscins menllic plate of gate is af be dy 4 dxain 6. chuplection Qoyer is developed 2. +e potential. Tritially, tt ae Nes thickwes tyes with Tse im Voltage pe. Here, Neste that p= suastvate js ak zere pottntra — | &..dwain js ak tve _ potential. So. thickest Of Rephection fayer WILL be more Nita the ~~ dain migien 2" apter @ Certam Limit apne poo Cth 1 weacked & othe space for plow op ere. Us Consicler that Vg 20. os sa phere is 110 Charweh hence the clrain Current Tp tS geo. Now Consdim thal Vis is incneasel. The +1 porertiak ok gake terminal mitt repeltd tne yolel uk in p-type Substrate amd wilh aftract tye && Se, the gtk atcumutetek toward the gat a: e sac — : = eWiLL become Livrikeekd KR Curve Dp Wilk become (Q Dain charactyristic Cusves— — , Tj Sn this Curve pov Constant Value of, Vis Initially Dp Ises 9 Livienls wien The fn Vos Tis region Is Kia onmnée region. Copy i) P4bove tne pinch off voltage Cemvert Ey becomes Constant. This vegion fs Kao Get Constant Claret region ii) Tp Tees with Tee in Vas In _ : parabolic inanner: JL dp stlicen nieeere (sia). Tee K (Migr) 8 then thes oninture Tw) Below -tne thresholf voltage of Vas Current Zp i chreshold veltage- Yemains Zero YJ We do not get amy ckiplection rmocdle tn the Curt © Aroout Th Threshold sald voltages _fix_si_it_is_ about — 3 volt. Soa blasing_volkage ap rtat_avout— 12V_ ist be. requivek See -thveshotdl voltage has te ve veluced— i The p~ Substrate With __@sitntaLien<100> has. been Lower . threshold _vallkage tren the _orfen -atien

» Se. onientatimn fs. used — dp Ais _useck as medal Contact then ib_gives higher volus of .-thuesnold voltage So tp W. neduce_it Silicon doped With _BaYen is _useet- ~ 95. Contack_maketal _shich gives _Signipicanz — reduction in -thyesnald __waltage. ©) Trensjer_Omractrisee Curve The gake Source voltage ak Conf) [parton te channel fs formed te Lut through the plow of drain Current of predenent Value is Called tne Source tBeshold value. The gaks Source threshold Valur is anckd oy Verr OF Simply Vy The Curent 2 Con) rents the. ynanimum permissible Cored -@ 4 OTE 2 On the erain Chard ctesi sees Marr vy Veg : Te tonsise. of a Ligntly —cloped p-type Seouic S| tmdluctoy bay 6si> ae —Wexks as Substyade. a De the suastrate —ptwe_highely. scape x(N= regions ox i ce reglens are Lauer 9.5m Bowe e Reena “Lays oe insublaking sik Aionide (sid) rs grown over the Sumprce Of sy Tiso holes are Cue bo fosutading Layer jor gallown metallic Contact With Soure & dyain gor Clechiics Connections Now a Voltage Vans — Ji £nke iste get tuo __Chetta christie _Curmvec. The third tewmiral is gate S & QS Shown im fig Dy D-mosfer i an M-Chamek fs also Introduced blw source & s:0,4 Brain de is important te mention here that there is no direc® Contact bln gate Heeminat RK N-type chants, 4 the gate terminal is insulated bvom N= type Crarmef by S10> Conse Of N-channel DetoshE Rayer Due N-Channel. there Kill ba am appreciaale cin cuceremnt Tacs gor Vis 20V, Dur tm the ante ob Sidr Megat bl) gate RoN- Chemneh tre iP impedence op this 7 Aineaxky upto —-the knee Voltage —-thera_=tine Ty takes a Curve _upte__a pinch oj, voltage © - Q.jytec_cthis_voltage _mabibity cp es __pecembd.— —— — Invexsely —pvopossi Ge. MAME) MmosFET is very high: > D> i substrata ‘ eae Alhere alt op its -ve charge pitt accumula “ ~ Fe nieths the n= channel, So most of eS of eee, ol: pcches Letenidiad —Chamnel wide repel 2 trey mith adbxack 3 Channel poe the_holes op p= Substrate 2 _ athena “they wi Lk or kings- Arse of alt a battery Vos ts Covmectest bi source & ckrain in such 9 Way that © Shoulel Ml prorn Source tp clrain , SO Current Ty will enter inte -the danin ~ ¥éCombine that m9. op —paxaavel_ploiwing. e* = Kar ou gn the Charme? itt __vlse .. Thirepore Tyalso se So tht graph rT | ox cuceve—in_Caham ce — sonade, Depletion Mode Lneed bat) al “Tranijer_enairactende Siva lena. ave gate. Ms Gn Ising the there js a Caxtatn voltage voltage | voltage — ie_applied dp the sa—Channtl_ maser, We — git trans yer _Charackus tsefe _Currve._____ mot. Soa_Big it ox —Virs_2_0., the drain _ Current at Which all op eF oF n-tharnel will ‘recembine i je (sexo ot had appreciable value. The _| Le show. with the holes of the Supserath SO, Zp Cavrent will become Jere. This voltage op the Character iste | Charatenistic . Curve | @n the othty hand, fs revased then the gate Curve charged) therepore, Layer op Lielectyic Which 7's nea n-channel WILL become -tvely Chargid » So all of tne OS of the. M-Chenvel , they ends and minor 4 cs Oy P- Substrate give thelr Contribution im flow OF Crt Tp. E Se, Tp wilt Tse with fhe fm Vis, 95 Shown in Upper pare of curve CAgt) cee 3874 8 Js equal te the pinch py voliage This part ib potential of battery of Mr source Cuct_oyy voltage Mc (off) af. | which the —olwain Current Ep reduced sty seme. = | spectpted megtiginke vValus at a recommend _ — | drain voltage ve. 3 tastes) ) pt Ts Klq taphection “type phake wilt be +vehyVottage vp at a TFET 7 b Ms) race k zs By # Toes (17 Xe ESET was propased in 1966 by. Meack ts [Link] was alse proposed by be As Semi insulating. Suioserate Bra The opewtion amd the Charactisistic of 9 P-ohm MOSFET axe Simila® te N-Channel MOSFET except track the Signs of Cusrents A voltages are rere. : (ther yg Diggerence bs _P- Chenvel & n-charmel t- P- Gaanne? MesFET , M- chamel_ (mesFET A turret Conducts are holed.| Current Conductors art elschrsy. Due ts Smalles mebidity] Dus te higher mobility Sh hobed , Switching speed] cp electrons, Sritorteh— fs st show. Switching speed oe fs hign- Lawges in size here fevge 0. ob & Can be Coltectee? im Smaller Sige, So tts Smale im size Je P-channel MOSFET are These ave expense. | Economic. There is no possibility) There is 9 chance ob < Of prematuat tun Om Pre--matusre tum en. Mekal Semiconducks field | eppeck Tremsisiny (mesrEDI- (Toe ESET has three EAT Semiconductor. One. iS i | pP I Eo ‘ 7 F — ett bayviex” poy “ene ae Cect rede, ancl Ohmic Contece —- Scnotekes Ohrle Contact bavvier satT GiSo ohmic conkacky fpr the Source # ctrmin electrodi The basic structst include L tne gate Length, 29 tne gate width ka thickness of epitariat Rages Most of MESFET ave made of N-type TT -% tan Semic Such as aAs ble of thes Bengt hyn © | mobility Which helps to mini. serves reristance, Practical MESFET ave fabricated per by Using - Rpitaniak Layers on Semiinsulabing swestyate te mi reise tne paralétic Capacitance. hencrally Le oStm , Ws Soot , argos Lop k “| operakion :- — Resistance cp n-channel fs given by | SUA bi pare BP. is wesistivity, Ais axta—ob— “Cross Secien of Channel. and z fswidin ofy- echamel. 1) is Width of Asplection Layer | poroned In the J- Channel — ot. gacbe Contac. sii £ —©- ne zla-W) “ The Current handling Capability of MESFET ts proper femal te Z ble the Cross Section area availatle for Chammel Current is proportional te 2 Ve | Noxking hho gate voltage fs apptted. %X vp is-— Smelt A Smatt clrnin current plows. fia th “channel. 4 mnagnétude of Current is “given by a aes $ a ic _eegion is Kla Rintae region. Resistance Gere a, Reb, sail Gane age given drain valtege ae voltage clog. fetes ee ——-tthe..chanmeh Tse prom 0 ab Sowwee te Ma ea ~[Link]. Ths the Schobtikey barrier bec eet —_—_-Tsingly. reverse bias seas Vy is Thee Ww Ptr ata ses and there fore. the Cresssetiomal Areg — ‘Ares 2(ae0)) |b plas oh Corrrent weoluces. Therefore ChometSlower rete Veh wt av Saha é Rtosh : : pay Zs the Voltage fs furtmx Tek tre chaplecson ayer touches the Semé-insulating Dayer. TRIS happens Nhin © becomes equal to a at the train R we get 4 Saturation Current at a specitic voltage Vp sxe (Saturation clrain voltage) 4 Channel become pincnel off * this saturation voltage is given by Sakurazion voltage = Pinch ofp valtage- Build jn vallage Vo sat cleain Vo cat > at 2 UB Sryerh the poy oly poimtad Vb is purtner The “the dephection region near the drain wie expand PLP Widt move towart the source However the Voltage a& poe P mais -the. Some: Thus the nO Of es per Unit ime arrie prom Source te poivd Hence the Cre plowing fr te Charmek wemaine Sanne ble the potential RP in the channek brem "Teesiswance Tes. ras 4 yesult the Current ‘res > a Source to point cloes._not._change. Therefore px drain voltage Largs thon. ee athe Current 2 becomes _canstest yeraains W Tee pow smaller —valust op Vp.-Cheomel — again acts aS -vesistor oud ide ‘resistence is hégnus ble -the Cross _sectionat arta avail alle For Camrtat flew is Weel. ulna Dts Tet te 4. Ciekein, Velie tne cleplerbion rregter, agasm_tmuches the Sent insullafingg Sutostrate 1” catioation Volinge. ble WWE SeUNee SN les use ne eesti Value Of Vy. HereMee “me sFET- bapers tn sation oy amlet__ of Pinch —opp~—-The ghee rep acsans an Larntnt— ae __ given by —— 1 ps = WAZ _Chamctunistie of MESFET S~ This Cure nes three main Yegcens- AS Liner region t= When Vek Vo ant, “then Corrtnd Bh Facregses Limearty with VD | vis | ave ae Prox 24 Q—& E> sieves enadiietieaonaoit in) Sehuration yegent When Vp > Vo sak ta this regen Current Tp els Independent ob apelced voltage Ys % vemams Constant Breakdown vegiont-~ taken Vb > Vag “ ws the dain voktage fs turner fired , avalanche breakdoun of the geke to Channel diode occurs and the Aran Current Suokenly kes. This ts tne oo brakclown yegien. Z= tem seep yasmEsy : Bo = Pete fa (wi ur)-4 Wh w2] , = rene fx (tef-we) - 3 (2-0) — vies &xpansien_inea © er b= senate Final stage- #1 Cpa Vor VeeMe = nest —@ =e | Nom, oe fretweey eae = [ewe | be Com “S: ‘ = wer vi J 2( VtM ia -O To +m [ve 2 / verve "+ 2 / we) Her To wPetuze® > Pinch ofp Cuvrect 2eL The ts cent ugersnnt ivilaeen ay “duis Cucrock. Ft bneas region Mp £6 My Ay cyNee Dentity af ev fn Conduction bane of sermic Ne = Density oni Dn _sbakeorakion see Ve > V+ Me Mei Byae@ T= aks Fae al (ee) Ver Br adel ny aM Ro Ssuusimeting B- BL verve - Bs t—[Vori ) - 2 42 Mak a] ( Ve ) 373 uy i q e — | Marve : Bees [3 U5 ) a(sesy J 0 twomscenductane fn Saturation regyien is : Gm = ae ca mB. ie 2 Mee 2 Zt? xB (exw =] ae ae ! [SE], Third bagel Zr the bregrlave région the wreabelowr | Velkage occurs af the clin end Wnne A the yeverse Voltage ic the breakdown voltage is given Ve (Breen voltge) Ve = Mt (Mal Ve Vo- Vo Fox hign speck & Low. pores | application —novrnably yy device is Preperrect | mis device _cloesn't havea. Conducting Charmek lak Vy 20, ble tne builtin. potertiak. Vii Op - || dhe gate is Supyidinc® to olephche tne | Cnamned —rigi¢n Soave _-tenreshold .voltngs | mmuse_be_ applied ak _-tne__gate te begin tne : the Channeh » Thus. requir Aneshold__Voltage ts given by pe Vet Vp as Obtain ee oes. Ge) sie sey"My )™ Cy is the gake — Capacitance... 3% GA = €zb == @ 7 a o (Cepcxnerd) i EEE S Btoreane in. GP me, tre FETE ave also important jor high prequinly mir wave applicakion as well af gor high speed digital! application. $a high speeel responce a forwarel Gores glo cut ct preqtemcy is measured. mis ts the marimun possible preguemcy at Which cutee gam becomes unity. oR Te 7s the Grequenty ak Which the MESFET Gan no Longer amplity tre input Sigrat. Pov Small signal cirewt the Change tn input Current is given hy DVg = % OZiy Dim = 27fGL% —® Lp OVs_Vakkage. is Changect ern Source te. aber a fsthem clk te Changs fa Chavge OQ, DE — eurrent flows prom Source tp Brain. We. Gan — orig itbi = 48 ‘OT —o Where AT fs tne time of How Of Charge YOM Source to gate. St te also Kla be gunk to Ores, =. -—@© % Diy > 22 = 24 x DY» oT BM OT S, Qn = Om = Ob .Sa DNs qo, ote Ke BQ on then Rae te Gf fae — © oy &@" @ = be 21S f, = &, X20 XG, fet t % 27h, 2 1s “% {| —@ ork Again in ef @ mani. 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In the family tree tne main three members are 1 DoOFET 2 TFET 3. MESFET Ba the branch of LUFET, we purtner clivide Fe ingy moseeT / MIsFET Cmetal Insulated) R second te FET Chek genchbn FET) bromth. Herve tre gate palt__op these Photaniec devices __wioxK ina material js a high band gap seméiConclucter flayer _acmng ve nea’ to near inpraxed_ grok af a net sunction Whicr acll af ce | Auto the ‘ aaa ¢ Insulator. Photonic Devices t- Photonic device art those in which |_| basic particle of Lignt 1-2. photon, plays mejor | Ee Tele. Photon is made by Superposition of ingot | —__ (te Of Waves nikatby Same prequingy & duc | (this Supexposition resultart Wave hag mantrum Proplitude ak Some pots &£ also haf gen ample at omer polnts. So the part DW wo poimtd Of Zev arnphitiude behaves as a photon & ft has