Table of Contents

Intro .................................................................................... 2
Committees........................................................................... 3
Conference Schedule…………………………………………......... 12
Tutorials…………………………………..................................... 14
Short Courses………………………………………………………… 15
Planery Session..................................................................... 16
Session 1.............................................................................. 16
Session 2.............................................................................. 20
Session 3.............................................................................. 24
Evening Panel Discussion 1...................................................... 28
Poster Session 1.................................................................... 29
Planery Session..................................................................... 36
Session 4.............................................................................. 36
Session 5.............................................................................. 42
Session 6.............................................................................. 46
Evening Panel Discussion 2...................................................... 50
Poster Session 2……………………………………………………… 51
Planery Session..................................................................... 58
Session 7.............................................................................. 58
Session 8.............................................................................. 64
Advertisements...................................................................... 69

IEEE Electron Devices Technology and 1

Manufacturing Conference 2024
 Introduction
IEEE Electron Devices Technology and Manufacturing (IEEE EDTM)
Conference was established by the IEEE Electron Devices Society (EDS) to
enable further performance/functionality enhancement of semiconductor
devices and systems with manufacturing innovations to overcome scaling
challenges. IEEE EDTM provides the forum where device, process,
material, and tool communities gather and discuss their novel ideas for
technological breakthrough. IEEE EDTM rotates among Asian countries
where hot-hubs of semiconductor manufacturing are located. Launched in
2017 in Toyama, Japan, IEEE EDTM was subsequently held in Kobe,
Japan (2018), in Singapore (2019), in Penang, Malaysia (2020), in
Chengdu, China (2021), in Oita, Japan (2022), in Seoul, Korea (2023),
and will take place for the first time in Bangalore, India this year. IEEE
EDTM is a premier conference, providing a unique forum for discussions
on a broadrange of device manufacturing-related topics.

IEEE Electron Devices Technology and 2

Manufacturing Conference 2024
 Committees
Conference Chairs

Yogesh Singh Chauhan

General Chair
(Indian Institute of Technology Kanpur)

Mayank Shrivastava
General Co-Chair
(Indian Institute of Science Bangalore)

Steering Committee

Kazunari Ishimaru Ravi Todi Fernando Guarin

EDS VP of Meetings and EDS President EDS Jr. Past President
Conferences (Chair) (Rivos Inc) (IEEE-EDS)
(Kioxia)

Samar Saha M K Radhakrishnan Bin Zhao

EDS Sr. Past President EDS Secretary EDS Treasurer
(Prospicient Devices) (NanoRel) (lotelligent)

Changrock Song Yang Chai

IEEE EDTM 2023 IEEE EDTM 2025
General Chair General Chair
(SK Hynix) (The Hong Kong
Polytechnic University)

Executive Committee

Yogesh Chauhan Mayank Shrivastava Udayan Ganguly

General Chair General Co-Chair Technical Program
(Indian Institute of (Indian Institute of Committee Chair
Technology Kanpur) Science Bangalore) (Indian Institute of
Technology Bombay)
Nihar Mohapatra Saurabh Lodha Kai Ni
Technical Program Education/Short-Course/ Education/Short-
Committe Co-Chair Tutorial Chair Course/Tutorial
(Indian Institute of (Indian Institute of Co-Chair
Technology Gandhinagar) Technology Bombay) (University of Notre
Dame)
Taiki Uemura Shree Prakash Tiwari Swaroop Ganguly
Education/Short- Publications Chair Sponsorship Chair
Course / Tutorial Co- (Indian Institute of (Indian Institute of
Chair (Industry) Technology Jodhpur) Technology Bombay)
(Samsung)

Aabid Husain Shubham Sahay Roger Booth

Sponsorship Co-Chair Financial Committe Chair Financial Committe Vice-
(Atomera) (Indian Institute of Chair
Technology Kanpur) (Qualcomm)

IEEE Electron Devices Technology and 3

Manufacturing Conference 2024
Angada Sachid Bill Nehrer Benjamin Iniguez
Industrial Advisory North American European Arrangement
Committee Arrangement Committee Chair
(Intel) Committee Chair (University Rovira i Virgili
(Atomera) Spain)
Edmundo Gutierrez
Region 9 Arrangement
Committee Chair
(INAOE)

Advisory Committee

Reza Arghavani V Ramagopal Rao Navakanta Bhat

Member Member Member
(Sandia National (BITS Pilani) (Indian Institute of
Laboratory) Science Bangalore)

Raja Swaminathan Charan Gurumurthy Subramaniyan Iyer

Member Member Member
(AMD) (Tata Semiconductors) (UCLA)

Nicole Saulnier
Member
(IBM)

Publicity Committee

Milova Paul Santosh Kumar Vishwakarma

Chair Co-Chair
Intel Portland Indian Institute of Technology
Indore
Ansh Avinash Lahgere
Co-Chair Vice Chair
IMEC, Belgium Indian Institute of Technology
Kanpur
N Kannan Abhishek Kumar Upadhyay
Member Member
Cadence Design Systems XFAB Germany
India Pvt. Ltd.
Manoj Saxena Anisul Haque
Member Member
Deen Dayal Upadhyaya East West University Dhaka
College, University of Delhi
Debanjan Bhowmik Jaspreet Singh
Member Member
Indian Institute of Synopsys India Pvt. Ltd.
Technology Bombay

IEEE Electron Devices Technology and 4

Manufacturing Conference 2024
 Technical Program Committees
Advanced Memory Technologies (AMT)

Track Chair Track Co-Chair

Manan Suri Tomoya Sanuki
(Indian Institute of Technology (Kioxia, South Korea)
Delhi, India)

Tracks / Sub Committee Members

1. Hyungjin Kim (Inha University, South Korea)

2. Doo Seok Jeong (Hanyang University, South Korea)
3. Vinayak Bharat Naik (Globalfoundries, India)
4. Bhagwati Prasad (Indian Institute of Science Bangalore,
India)
5. Sourav De (Frunhofer IPMS, Germany)
6. CR Parthasarathy (Micron, India)
7. Uma Sharma (Micron, USA)
8. Eilam Yalon (Technion - Israel Institute of
Technology, Israel)

Design / System Technology Co-optimization

(DTCO/STCO)

Track Chair Track Co-Chair

Hussam Amrouch Rahul Rao
(Technical University of Munich, (IBM,India)
Germany)

Tracks / Sub Committee Members

1. Ahmedullah Aziz (University of Tennessee Knoxville,

USA)
2. Heba Abunahla (TU Delft, The Netherlands)
3. Andries Scholten (NXP Semiconductors, The
Netherlands)
4. Girish Pahwa (University of California Berkeley, USA)
5. Thomas KÃEmpf (Fraunhofer IPMS, Germany)
6. Nazek El-Atab (KAUST, Saudi Arabia)
7. Imon Mondal (Indian Institute of Technology Kanpur,
India)
8. Utsav Banerjee (Indian Institute of Science Bangalore,
India)
9. Viveka Konandur Rajanna (Indian Institute of Science
Bangalore, India)

IEEE Electron Devices Technology and 5

Manufacturing Conference 2024
 Devices and Circuit Reliability (DCR)

Track Chair Track Co-Chair

Nagarajan Raghavan Narendra Parihar
(Singapore University of (Intel, USA)
Technology and Design, Singapore)

Tracks / Sub Committee Members

1. Nilesh Goel (BITS Pilani Dubai Campus, Dubai)

2. Wu Xing (East China Normal University, China)
3. Fei Hui (Zhengzhou University, China)
4. Tan-Li Wu (National Young Ming Chiao Tung
University, Taiwan)
5. Andrea Padovani (The University of Modena and
Reggio Emilia, Italy)
6. Shinji Yokogawa (The University of Electro-
Communications, Japan)
7. Stanislav Tyaginov (IMEC, Belgium)
8. Khiyun Choi (Intel, USA)
9. Subrat Mishra (IMEC, Belgium)
10. Purushothaman Srinivasan (Globalfoundries, USA)
11. Kranthi Nagothu (Texas Instruments)

Disruptive Technologies (DT)

Track Chair Track Co-Chair

Abu Sebastian Veeresh Deshpande
(IBM Research-Zurich, (Indian Institute of
Switzerland) Technology Bombay, India)

Tracks / Sub Committee Members

1. Bipin Rajendran (King’s College London, UK)

2. Andreas Fuehrer (IBM Research Zurich, Switzerland)
3. Yuchao Yang (Peking University, China)
4. SangBum Kim (Seoul National University,
South Korea)
5. Nicole Saulnier (IBM Research Albany, USA)
6. Sandip Lashkare (Indian Institute of Technology
Gandhinagar, India)
7. Shaibal Mukherjee (Indian Institute of Technology
Indore, India)

IEEE Electron Devices Technology and 6

Manufacturing Conference 2024
 Emerging Materials and Devices (EMD)

Track Chair Track Co-Chair

Saptarshi Das Albert Cheng
(Pennsylvania State University, (TSMC, Taiwan)
USA)

Tracks / Sub Committee Members

1. Mario Lanza (KAUST, Saudi Arabia)

2. Ki Kang Kim (SKKU, South Korea)
3. Carl Naylor (Intel, USA)
4. Mandar Deshmukh (TIFR, India)
5. Arindam Ghosh (Indian Institute of Science Bangalore,
India)
6. Avik Ghosh (University of Virginia, USA)
7. Kelvin Fong (NUS Singapore)
8. Jinseong Heo (Samsung, South Korea)

Logic Devices (LD)

Track Chair Track Co-Chair

Naoto Horiguchi Krishna Bhuwalka
(IMEC, Belgium) (Huawei Technologies, Belgium)

Tracks / Sub Committee Members

1.Kazuyuki Tomida (Rapidus, Japan)

2.Chelsey Dorow (Intel, USA)
3.Runsheng Wang (Peking University, China)
4.Geert Hellings (IMEC, Belgium)
5.Sujith Subramanian (IMEC, Belgium)
6.Masaharu Kobayashi (University of Tokyo, Japan)
7.Mandar Bhoir (Micron, USA)
8.Abhishek Dixit (Indian Institute of Technology Delhi,
India)
9. Tarun Kumar Agrawal (Indian Institute of Technology
Gandhinagar, India)
10. Kaushik Nayak (Indian Institute of Technology
Hyderabad, India)

IEEE Electron Devices Technology and 7

Manufacturing Conference 2024
 MEMS/NEMS and Heterogeneously Integrated Devices
(NEMS)

Track Chair Track Co-Chair

Jeong-Bong Lee Shantanu Bhattacharya
(Baylor University, USA) (Indian Institute of
Technology Kanpur, India)

Tracks / Sub Committee Members

1. Deleep Nair (Indian Institute of Technology

Madras, India)
2. Pushparaj Singh (Indian Institute of Technology
Delhi, India)
3. Gayathri Pillai (Indian Institute of Science
Bangalore, India)
4. Satinder Sharma (Indian Institute of Technology
Mandi, India)
5. Arkadeep Mitra (The University of Texas at Dallas, USA)
6. Karthik Colinjivadi (Applied Materials, USA)
7. Ning Xue (Chinese Academy of Sciences, China)
8. Mitradip Bhattacharjee (IISER Bhopal, India)
9. Nitish Goel (TDK Invensense, USA)
10. Zheng Yan (University of Missouri Columbia, USA)
11. Pai-Yen Chen (University of Illinois Chicago, USA)

Modeling and Simulation (MS)

Track Chair Track Co-Chair

Victor Moroz Avirup Dasgupta
(Synopsys, USA) (Indian Institute of
Technology Roorkee, India)

Tracks / Sub Committee Members

1. Ananda Shanker Roy (Intel, USA)

2. Sagnik Dey (Texas Instruments, USA)
3. Lan Wei (University of Waterloo, Canada)
4. Lixin Ge (QualComm, USA)
5. Arvind Ajoy (Indian Institute of Technology
Palakkad, India)
6. Rajat Vishnoi (Micron, India)
7. Wladek Grabinski (GMC consulting, Switzerland)
8. Lining Zhang (Peking University, China)
9. Anjan Chakravorty (Indian Institute of Technology
Madras, India)
10. Mohit Ganeriwala (Universidad de Granada, Spain)
11. Volker Kubrak (Infineon, Germany)
12. Oves Badami (Indian Institute of Technology
Hyderabad, India)

IEEE Electron Devices Technology and 8

Manufacturing Conference 2024
 Packaging and Heterogeneous Integration (PHI)

Track Chair Track Co-Chair

Nilesh Badwe Gokul Kumar
(Indian Institute of Technology (Micron, USA)
Kanpur, India)

Tracks / Sub Committee Members

1. Manish Hooda (Semiconductor Labaratory Mohali,

India)
2. Anandaroop Bhattacharya (Indian Institute of
Technology Kharagpur, India)
3. Deepak Arora (Indian Institute of Technology Jodhpur,
India)
4. Omkar Gupte (AMD, USA)
5. Kuo Ning Chiang (National Tsing Hua University,
Taiwan)
6. Sandeep Sane (Lightmatter, USA)
7. Ravi Mahajan (Intel, USA)

Photonics, Optoelectronics, Imaging and Display

(POID)

Track Chair Track Co-Chair

Bijoy Krishna Das Vivek Raghunathan
(Indian Institute of Technology (Xscape Photonics, USA)
Madras, India)

Tracks / Sub Committee Members

1. Krishna Balasubramaniam (Indian Institute of

Technology Delhi, India)
2. Tapjyoti Dasgupta (Indian Institute of Science
Bangalore, India)
3. Gauri Karve (IMEC, Belgium)
4. Sandeep Razdan (Cisco Systems, USA)
5. Sukeshwar Kannan (Broadcom, USA)
6. Samit K Ray (Indian Institute of Technology
Kharagpur, India)
7. JongMoo Lee (ETRI, South Korea)
8. Yeung-Lak Lee (GIST, South Korea)
9. Lorenzo Pavesi (University of Toronto, Canada)
10. Arup Polley (Indian Institute of Science
Bangalore, India)

IEEE Electron Devices Technology and 9

Manufacturing Conference 2024
 Power and Energy Devices (PED)

Track Chair Track Co-Chair

Ankit Soni Bhawani Shankar
(Nexperia, UK) (Power Integrations, USA)

Tracks / Sub Committee Members

1. Jaya Jha (Indian Institute of Technology (BHU)

Varanasi, India)
2. Radhakrishnan Sithanandam (Micron, India)
3. Anil Kottantharayil (Indian Institute of Technology
Bombay, India)
4. Peter Moens (ON Semiconductor, USA)
5. Dev Alok Girdhar (RENESAS Electronics, USA)
6. Prasad Venkatraman (ON Semiconductor, USA)
7. Sukhendu Deb Roy (Rohm Semiconductor, India)
8. Sayak Dutta Gupta (Infineon, Austria)
9. Buddha Deka Boruah (University College London,
UK)
10. Chandramohan George (Imperial College London,
UK)
11. Amit Verma (Indian Institute of Technology Kanpur,
India)
12. Bich-Yen Nguyen (Soitec, France)

Process, Tools, Yield and Manufacturing (PTYM)

Track Chair Track Co-Chair

Tomasz Brozek Min Hyuk Park
(PDF Solutions, USA) (Seoul National
University, South Korea)

Tracks / Sub Committee Members

1. Shawn Thomas (Applied Materials, USA)

2. David Fried (Lam Research, USA)
3. Pushkar Ranade (Intel, USA)
4. Shinichi Yoshida (Sony, Japan)
5. Jaeyun Yi (SK Hynix, South Korea)
6. Min Li (Peking University, China)
7. Jae-Yong Park (Samsung, South Korea)
8. Yoshiki Yamamoto (RENESAS Electronics, Japan)
9. Sushant Mittal (Synopsys, India)

IEEE Electron Devices Technology and 10

Manufacturing Conference 2024
 RF Devices and Circuits (RD)

Track Chair Track Co-Chair

Dipankar Saha Venkata Vanukuru
(Indian Institute of Technology (Globalfoundries, India)
Bombay, India)

Tracks/ Sub Committee Members

1. Tushar Sharma (RENESAS Electronics, USA)

2. Ritesh Jain (RENESAS Electronics, India)
3. K V Srivastava (Indian Institute of Technology Kanpur,
India)
4. Yuehang Xu (University of Electronic Science and
Technology, China)
5. Harshit Agrawal (Indian Institute of Technology
Jodhpur, India)
6. Priyansha Kaurav (Indian Institute of Technology
Roorkee, India)
7. Sudip Ghosh (Infineon, Germany)
8. Vishal Gupta (Keysight, India)
9. Meena Mishra (Solid State Physics Labaratory, India)
10. Digbijoy Nath (Indian Institute of Science Bangalore,
India)

Sensors, Flexible and Bioelectronics (SFBE)

Track Chair Track Co-Chair

Luisa Petti V V Raghavendra Sai
(Free University of Bozen - (Indian Institute of
Bolzano, Italy) Technology Madras, India)

Tracks/ Sub Committee Members

1. Francesca Bottacchi (Pragmatic Semiconductors, UK)

2. Niels Benson (Aircode, Germany)
3. Linrun Feng (Linkzill, China)
4. Bhaskar Dudem (University of Surrey, UK)
5. Martina Aurora Costa Angeli (Free University of
Bozen-Bolzano, Italy)
6. Almudena Rivadeneyra (University of Granada,
Spain)
7. Satyabrata Jit (Indian Institute of Technology (BHU)
Varanasi, India)
8. Manuela Ciocca (Free University of Bozen-Bolzano,
Italy)
9. Shweta Agarwal (Aarhus University, Denmark)
10. Praveen C Ramamurthy (Indian Institute of Science
Bangalore, India)

IEEE Electron Devices Technology and 11

Manufacturing Conference 2024
 Conference Schedule
Day 0 (3rd March 2024, Sunday)
Time Agenda Rooms
09:30 AM - 11:00 AM Tutorials 1 - 4 Audi 4, Audi 5
Audi 8, Audi 9
11:00 AM - 11:30 AM Tea, Coffee, Networking Pre-function area
11:30 AM - 01:00 PM Tutorials 1 - 4 Audi 4, Audi 5
Audi 8, Audi 9
01:00 PM - 02:30 PM Lunch, Networking Terrace
02:30 PM - 04:00 PM Short Courses 1 - 3 Audi 4, Audi 8,
Audi 9
04:00 PM - 04:30 PM Tea, Coffee, Networking Pre-function area
04:30 PM - 06:00 PM Short Courses 1 - 3 Audi 4, Audi 8,
Audi 9
07:30 PM - 10:00 PM Dinner Terrace

Day 1 (4th March 2024, Monday)

Time Agenda Rooms
09:00 AM - 09:30 AM Inauguration
09:30 AM -10:20 AM Plenary - 1 Audi 1 + 2 + 3
10:20 AM - 11:10 AM Plenary - 2
11:10 AM - 11:30 AM Tea, Coffee, Networking Pre-function area
11:30 AM - 01:00 PM Parallel Sessions (1A, 1B, Audi 1, Audi 2
1C, 1D, 1E, 1F, 1G, 1H) Audi 3, Audi 4,
Audi 5,
Audi 6+7,Audi 8,
Audi 9
01:00 PM - 02:00 PM Tea, Coffee, Networking Pre-function area
02:00 PM - 03:30 PM Parallel Sessions (2A, 2B, Audi 1, Audi 2
2C, 2D,2E, 2F, 2G, 2H, Audi 3, Audi 4,
2J) Audi 5,
Audi 6+7,
Audi 8, Audi 9,
Audi 10
03:30 PM - 03:45 PM Tea, Coffee, Networking Pre-function area
03:45 PM - 05:15 PM Parallel Sessions (3A, Audi 1, Audi 2
3B, 3C, 3D, 3E, 3F, 3G, Audi 3, Audi
3H) 4, Audi 5,
Audi 6+7,
Audi 8, Audi 9
05:15 PM - 05:45 PM Tea, Coffee, Networking Pre-function area
06:00 PM - 07:30 PM Poster Session 1 Audi 2 + 3
06:00 PM - 07:30 PM IEEE Young Audi 8 + 9
Professionals Event
06:30 PM - 07:30 PM Evening Panel Session 1 Audi 1
08:00 PM -10:30 PM Dinner - General Chair’s Terrace
Reception

IEEE Electron Devices Technology and 12

Manufacturing Conference 2024
 Day 2 (5th March 2024, Tuesday)
Time Agenda Rooms
09:00 AM - 09:50 AM Plenary - 3
Audi 1 + 2 + 3
09:50 AM - 10:40 AM Plenary - 4
10:40 AM - 11:00 AM Tea, Coffee, Networking Pre-function area
11:00 AM - 01:00 PM Parallel Sessions (4A, 4B Audi 1, Audi 2
4C, 4D, 4E, 4F, 4G, 4H) Audi 3, Audi 4,
Audi 5,
Audi 6+7,Audi 8,
Audi 9
01:00 PM - 02:00 PM Lunch, Networking Terrace
02:00 PM - 02:30 PM Parallel Sessions (5A, 5B, Audi 1, Audi 2
5C, 5D, 5E, 5F, 5G, 5H) Audi 3, Audi 4,
Audi 5,
Audi 6+7,
Audi 8, Audi 9,
03:30 PM - 03:45 PM Tea, Coffee, Networking Pre-function area
03:45 PM - 05:15 PM Parallel Sessions (6A, 6B, Audi 1, Audi 2
6C, 6D, 6E, 6F, 6G, 6H) Audi 3, Audi
4, Audi 5,
Audi 6+7,
Audi 8, Audi 9
05:15 PM - 05:45 PM Tea, Coffee, Networking Pre-function area
06:00 PM - 07:30 PM Poster Session 2 Audi 2 + 3
06:00 PM - 07:30 PM IEEE WiEDS Event Audi 8 + 9
06:30 PM - 07:30 PM Evening Panel Session 2 Audi 1
08:00 PM -10:30 PM Dinner Terrace

Day 3 (6th March 2024, Wednesday)

Time Agenda Rooms
09:00 AM - 09:50 AM Plenary – 5 Audi 1 + 2 + 3
09:50 AM - 10:40 AM Plenary – 6
10:40 AM - 11:00 AM Tea, Coffee, Networking Pre-function area
11:00 AM - 01:00 PM Parallel Sessions (7A, 7B, Audi 1, Audi 2,
7C, 7D, 7E, 7F, 7G, 7H) Audi 3, Audi 4,
Audi 5,
Audi 6+7,
Audi 8, Audi 9
01:00 PM - 02:00 PM Lunch, Networking Terrace
02:00 PM - 04:00 PM Parallel Sessions (8A, 8B, Audi 1, Audi 2
8C, 8D, 8E, 8F) Audi 3, Audi 4,
Audi 5,
Audi 6+7
02:00 PM - 04:00 PM Student Research Forum Audi 8 + 9
04:00 PM - 05:00 PM Tea, Coffee, Networking Pre-function area
05:00 PM - 06:00 PM Cultural Event/Entertainment Audi 1 + 2 + 3
06:00 PM - 07:00 PM Closing Ceremony, Awards Audi 1 + 2 + 3
07:00 PM - 09:30 PM Thanksgiving Dinner Terrace

IEEE Electron Devices Technology and 13

Manufacturing Conference 2024
 Planning Your Sunday

Tutorials
T1 : Wide Bandgap Devices for
RF and Power Applications
Sunday, March 3, 09:30 AM – 01:00 PM
Session Room : Audi 4, Session Chair : Sushobhan Avasthi;
Indian Institute of Science Bangalore, India
09:30 AM [T1-1] GaN Power Transistors : Technology and Applications
Ken Shono; Transphorm Japan
11:30 AM [T1-2] GaN Microwave/RF Transistors: From Fundamentals to
Emerging Trends
Digbijoy Nath; Indian Institute of Science Bangalore, India

T2 : Reliability in Advanced
Semiconductor Devices
Sunday, March 3, 09:30 AM – 01:00 PM
Session Room : Audi 5, Session Chair : Taiki Uemura;
Samsung Electronics, South Korea
09:30 AM [T2-1] A Device to Circuit Framework for Aging (BTI, HCD)
in Advanced Technology Nodes
Souvik Mahapatra; Indian Institute of Technology Bombay,
India
11:30 AM [T2-2] Insulators for Devices based on 2D Materials
Tibor Grasser; Institute of Microelectronics, TU Wien, Austria

T3 : Artificial Neural Networks

Sunday, March 3, 09:30 AM – 01:00 PM
Session Room : Audi 8, Session Chair : Shubham Sahay;
Indian Institute of Technology Kanpur, India
09:30 AM [T3-1] In-Memory Computing for Artificial Neural Networks
Abu Sebastian; IBM Research Zurich, Switzerland
11:30 AM [T3-2] Biologically Realistic Artificial Neural Networks
Veeresh Deshpande; Indian Institute of Technology Bombay,
India

T4 : TCAD and Compact Modeling

Sunday, March 3, 09:30 AM – 01:00 PM
Session Room : Audi 9, Session Chair : Avinash Lahgere;
Indian Institute of Technology Kanpur, India
09:30 AM [T4-1] Compact Modeling : General Introduction and
Modeling of Statistical Variability
Gert-Jan Smit; NXP Semiconductors, The Netherlands

IEEE Electron Devices Technology and 14

Manufacturing Conference 2024
10:30 AM [T4-2] MOSFET Characterisation and Modeling for
Cryogenic Applications
Thomas Bedecarrats; CEA-Leti, Grenoble, France
12:00 AM [T4-2] TCAD-based Compact Model Parameter Extraction of
Si and SiC High Power Devices
D. Vinay Kumar; Synopsys India

Short Courses
SC1 : Advances in Logic Devices
Sunday, March 3, 02:30 PM – 06:00 PM
Session Room : Audi 4, Session Chair : Saurabh Lodha;
Indian Institute of Technology Bombay, India
02:30 PM [SC1-1] Logic Technology Roadmap
Gaurav Thareja; Applied Materials, USA
04:30 PM [SC1-2] Nanosheet-based Transistor Architectures for
Advanced CMOS Scaling
Hans Mertens; IMEC Leuven, Belgium

SC2 : Advances in Memory Technologies

Sunday, March 3, 02:30 PM – 06:00 PM
Session Room : Audi 8, Session Chair : Udayan Ganguly;
Indian Institute of Technology Bombay, India
02:30 PM [SC2-1] DRAM and NAND Memories: Technology and
Design Perspectives
CR Parthasarathy; Micron, USA

05:00 PM [SC2-2] DRAM Scaling: History and Innovation

Sungho Jang; Samsung Electronics, South Korea

SC3 : Semiconductor Packaging Technology

Sunday, March 3, 02:30 PM – 06:00 PM
Session Room : Audi 9, Session Chair : Shree Prakash Tiwari;
Indian Institute of Technology Jodhpur, India
02:30 PM [SC3-1] Fan-out Semiconductor Packaging: Evolution,
Current Status and Future Trends
Santosh Kumar; Reliance, India
04:30 PM [SC3-2] Recent Advancements in Interconnect Materials and
Technologies in Semiconductor Packaging
Nilesh Badwe; Indian Institute of Technology Kanpur, India

IEEE Electron Devices Technology and 15

Manufacturing Conference 2024
 Planning Your Monday

Plenary Talk
Monday, March 4, 09:30 AM – 11:10 PM
Session Room : Audi 1 + 2 + 3, Session Chair : Prof. Ramgopal Rao;
BITS Pilani, India
09:30 AM Plenary 1
Semiconductor – the Next 75 Years?
Chenming Hu; University of California Berkeley, USA
10:20 AM Plenary 2
GaN Technology Enabling Power Electronics
Sameer Pendharkar; Texas Instruments, USA

Oral Sessions

Session 1A : CMOS Technology Scaling

Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 1, Session Chair : Krishna Bhuwalka,
Huawei, Belgium
09:00 AM Inaugration
11:30 AM [1A-1] [Keynote]
CMOS 2.0: The era of CMOS heterogeneous scaling
Julien Ryckaert; IMEC, Leuven, Belgium
12:00 PM [1A-2] [Keynote]
Semiconducting Oxide Transistors for Future
Microelectronics
Suman Datta; Georgia Institute of Technology, Atlanta, USA
12:30 PM [1A-3] [Keynote]
Speeding device innovation with integrated materials
solutions
Milind Weling; Merck KGaA, Darmstadt, Germany

Session 1B : RF, Millimetre and Terahertz

Technologies, Circuits and Systems
Monday, March 4, 11:30 AM – 01:00 PM.
Session Room : Audi 9, Session Chair : Dipankar Saha, Indian
Institute of Technology Bombay, India
11:30 AM [1B-1] [Invited]
The Next Generation RF and Power Devices: Heterogenous
Integration with Diamond
Martin H H Kuball; University of Bristol, UK
11:55 AM [1B-2] [Invited]
Advances in Millimetre-Wave III-N Transistor Performance
through Polarization-Graded Heterostructures
Patrick Fay; University of Notre Dame, Notre Dame, USA

IEEE Electron Devices Technology and 16

Manufacturing Conference 2024
12:20 PM [1B-3] [Invited]
Modeling of Charge and Current in N-polar GaN
heterostructures and transistors
Arvind Ajoy; Indian Institute of Technology Palakkad, India
12:45 PM [1B-4]
Guidelines for Overcoming the Practical Limitations for the
Fabrication of THz Sources with GaN Planar Gunn Diodes
Javier Mateos; University of Salamanca, Salamanca, Spain

Session 1C : TCAD and Manufacturing

Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 2, Session Chair : Avirup Dasgupta, Indian
Institute of Technology Roorkee, India
11:30 AM 1C-1] [Invited]
Semiconductor Roadmap Challenges and TEL Innovation
Noritaka Yokomori; Tokyo Electron Ltd.,/TEL Venture
Capital/ Tokyo Electron Miyagi Ltd.,/TEL Technology
Center America Inc.
12:00 AM [1C-2] [Invited]
Understanding the Influence of By-Products in Shaping
Feature Profiles during Plasma Etching
Samit Barai; Applied Materials, India
12:30 AM [1C-3] [Invited]
ComputLitho – An Indigenous Optical Lithography Simulator
with Novel Features
Pardeep Kumar; Applied Materials, India

Session 1D : Emerging Memory Technologies

Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 8, Session Chair : Tomoya Sanuki; Kioxia

11:30 AM [1D-1] [Keynote]

Embedded STT-MRAM for automotive applications
Johannes Mueller; GlobalFoundries, Dresden, Germany
12:00 PM [1D-2] [Invited]
Status and perspectives of embedded Phase Change
Memories
Andrea Redaelli; STMicroelectronics, Milan, Italy
12:30 AM [1D-3] [Invited]
3D Memory and Thermal Management: Challenges in
System Level Design
Preeti Ranjan Panda; Indian Institute of Technology Delhi,
India
Session 1E : Ferroelectric Materials and
Devices I
Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 6+7, Session Chair : Ambika Prasad Shah;
Indian Institute of Technology, Jammu
11:30 AM [1E-1] [Invited]
Ferroelectric spin orbit devices for ultra-low power
computing
Jean Philippe Attane; Spintec, Grenoble, France

IEEE Electron Devices Technology and 17

Manufacturing Conference 2024
11:55 AM [1E-2] [Invited]
Ferroelectrics and their Application in Non-Traditional
Computing
Nikhil Shukla; University of Virginia, USA
12:20 PM [1E-3] [Invited]
Ferroelectric Capacitive Memory based on Metal-
Ferroelectric-Semiconductor structure
Gong Xiao; National University of Singapore, Singapore
12:45 PM [1E-4]
Ferroelectric Gate Stack Engineering with Tunnel Dielectric
Insert for Achieving High Memory Window in FEFETs for
NAND Applications
Dipjyoti Das1,3, Hyeonwoo Park1, Zekai Wang1,Chengyang
Zhang1, Prasanna Venkatesan Ravindran1,Chinsung Park1,
Nashrah Afroze1, Po-Kai Hsu1, Mengkun Tian1, Hang Chen1,
Winston Chern1, Suhwan Lim2, Kwangsoo Kim2, Kijoon
Kim2, Wanki Kim2, Daewon Ha2, Shimeng Yu1, Suman
Datta1, and Asif Khan1; 1Georgia Tech, USA; 2Samsung
Electronics Co. Ltd, South Korea; 3NIT Silchar, India
01:00 PM [1E-5]
A Novel Complementary Ferroelectric FET based
Compressed Multibit Content Addressable Memory with
High Area- and Energy-Efficiency
Weikai Xu1, Jin Luo1, Boyi Fu1, Zhiyuan Fu1, Kaifeng
Wang1, Chang Su1, Qianqian Huang1,2,3, and Ru
Huang1,2,3;1School of Integrated Circuits, Peking University,
China; 2Beijing Advanced Innovation Centerfor Integrated
Circuits, China; 3Chinese Institute for Brain Research, China.

Session 1F : WBG Device Applications

Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 3, Session Chair: Sayak Dutta Gupta;
Indian Institute of Technology Madras, India
11:30 AM [1F-1] [Keynote]
Distributed polarization doping unleashes ultrawide
bandgap electronics with Aluminum Nitride
Debdeep Jena; Cornell University, USA
12:00 PM [1F-2] [Invited]
High Voltage and High Frequency GaN HEMTs on the
novel substrates
Tian Li Wu; National Yang Ming Chiao Tung University,
Taiwan
12:30 PM [1F-3] [Invited]
Battery Charger Process Technologies
Mehul Shah; Renesas Electronics, USA

IEEE Electron Devices Technology and 18

Manufacturing Conference 2024
 Session 1G : Packaging Materials
Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 5, Session Chair: Nilesh Badwe;
Indian Institute of Technology Kanpur, India
11:30 AM [1G-1] [Invited]
Semiconductor Packaging Materials Enabling Next
Generation of Power Electronics and High Performance
Computing Applications
Ram K. Trichur; Henkel, California, USA
12:00 PM [1G-2] [Invited]
Advanced Materials for Power Electronics
Ravi Bhatkal; MacDermid Alpha Electronics Solutions, India
12:30 PM [1G-3]
Polymer Dielectrics for Electronic Packaging: Curing
Dynamics of an Epoxy Resin Blend
Siddharth Saraswati, Deepak Arora; Indian Institute of
Technology Jodhpur, India

Session 1H : 2D Sensors
Monday, March 4, 11:30 AM – 01:00 PM
Session Room : Audi 4, Session Chair : Shree Prakash Tiwari;
Indian Institute of Technology Jodhpur, India
11:30 AM [1H-1] [Keynote]
Water-based, defect-free and biocompatible 2D material
inks for printed electronics
Cinzia Casiraghi; University of Manchester, UK
12:00 PM [1H-2] [Invited]
Graphene based sensors for light and THz radiation
Daniel Neumaier; University of Wuppertal, Germany
12:30 PM [1H-3]
Ultra-Sensitive Humidity Sensor based on 2D GeS
Nanoflakes
Deepak Sharma1 , Rahul Kumar2 , Neha Sakhuja3 ,
Ayan Pal1 , and Navakanta Bhat1; 1IISc Bangalore, India;
2
PDEU Gandhinagar, India; 3Micron Technology Inc,
Hyderabad, India
12:45 PM [1H-4]
Vertically Aligned 2-D MoS2 based High performance
Humidity Sensor
Prajjwal Shukla1, Rahul Gond1, Prakhar Singh2, Bhanu
Prakash2, Brajesh Rawat1; 1Indian Institute of Technology
Ropar, India; 2INST Mohali, Punjab, India

IEEE Electron Devices Technology and 19

Manufacturing Conference 2024
 Session 2A : Design Technology
Co-Optimization I
Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 1, Session Chair: Rahul Rao; IBM India
02:00 PM [2A-1] [Keynote]
DTCO Evolution From 2D to 3D
Dureseti Chidambarrao; IBM, USA
02:30 PM [2A-2] [Invited]
DTCO Role in Semiconductor Industry beyond the End of
Pitch Scaling
Arup Ratan Saha; Synopsys, India
03:00 PM [2A-3] ] [Invited]
Structural Optimization and Vt Offering of 2nd Generation
MBCFET to Enhance Power-Performance Efficiency
Sang Hyeon Lee; Samsung, South Korea

Session 2B : Neuromorphic Computing I

Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 9, Session Chair : Abu Sebastian;
IBM Research, Zurich
02:00 PM [2B-1] [Keynote]
Neuromorphic computing with emerging memory and 2D
semiconductors
Daniele Ielmini; Politecnico di Milano, Italy
02:30 PM [2B-2] [Invited]
Materials and devices for energy efficient spiking
neuromorphic chips at the Edge
Adrian Ionescu; EPFL, Switzerland
03:00 PM [2B-3]
Revealing Unique Scaling Effects of Random Telegraph
Noise and Electron Injection Stochasticity in Stochastic
Resonance with Floating Gate based Neurons
Akira Goda, Chihiro Matsui, Ken Takeuchi; Tokyo
University, Tokyo, Japan
03:15 PM [2B-4]
Noise Analysis of Readout Chain in FDSOI-based 1T-APS
for In-Sensor Vector-Matrix-Multiplication
Yi Xiao1, Zheng Zhou1, Yijiao Wang2, Jiaqi Li1, Guihai
Yu1, Shiyang Li1, Haozhang Yang1, Lixia Han1, Ruiqi
Chen1, Peng Huang1, Xiaoyan Liu1, Jinfeng Kang1;
1
Peking University, China; 2Beihang University, China

Session 2C : TCAD Simulation

Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 2, Session Chair: Pardeep Kumar;
Applied Materials, India
02:00 PM [2C-1] [Keynote]
The evolving role of TCAD in pushing the boundaries of
technology innovation
Aveek Sarkar; Synopsys, USA

IEEE Electron Devices Technology and 20

Manufacturing Conference 2024
02:30 PM [2C-2] [Invited]
A Device to Circuit Reliability Framework for BTI and HCD
Aging
Souvik Mahapatra; Indian Institute of Technology Bombay,
India

03:00 PM [2C-3] [Invited]

Layout and Process Dependent Modeling and Simulation of
High-Voltage 4H-SiC Power Devices
D. Vinay Kumar; Synopsys, India

Session 2D : Ferroelectric Memories

Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 8, Session Chair: Johannes Mueller;
GlobalFoundries, Dresden, Germany
02:00 PM [2D-1] [Invited]
Recent advances in hafnia-based ferroelectric random
access memories
Laurent Grenouillet; CEA-Leti, France
02:25 PM [2D-2] [Invited]
Ferro-electronics for next generation memory and NAND
storage technology
Asif Khan; Georgia Institute of Technology, Atlanta, USA
02:50 PM [2D-3] [Invited]
Investigation of Endurance Degradation in Silicon-Doped
Hafnium Oxide (HSO) and Zirconium-Doped Hafnium
Oxide (HZO) based FeFET Memory
Pardeep Duhan; Indian Institute of Technology Ropar, India
03:15 PM [2D-4]
Experimental Investigation of EM Side Channel and FI
Attacks on Commercial FRAM Chips
BhanPrakash Goswami, Manan Suri; Indian Institute of
Technology Delhi, India

Session 2E : 2D Materials and Devices I

Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 6+7, Session Chair: Alwin Daus;
Freiberg University, Germany
02:00 PM [2E-1] [Keynote]
2D-materials based transistors for logic: process
achievements and path forward
Inge Asselberghs; IMEC, Belgium, Germany
02:30 PM [2E-2] [Invited]
Industry integration of 2D FETs: possible paths and the
main challenges
Yury Illarionov; Southern University of Science and
Technology, China
02:55 PM [2E-3] [Invited]
Monolithic Integration of 2D-Material SRAM Cells
Vita Pi-Ho Hu; National Taiwan University, Taipei, Taiwan
03:20 PM [2E-4]
Enhancing doping efficiency to achieve high performance
p-type 2D field effect transistors
Saptarshi Das; Pennsylvania State University, USA

IEEE Electron Devices Technology and 21

Manufacturing Conference 2024
 Session 2F : High Power Device Reliability
Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 3, Session Chair : Kalya Shubhakar,
SUTD Singapore
02:00 PM [2F-1] [Invited]
Understanding the role of encapsulation layers under wet
conditions on the reliability of power devices
Luigi Balestra; University of Bologna, Italy

02:25 PM [2F-2] [Invited]

From Planar to Vertical GaN-on-Si Power Devices:
Reliability Challenges to Efficient Power Conversion
Nicolo Zagni; University of Modena et Reggio Emilia, Italy
02:50 PM [2F-3] [Invited]
Investigation of Radiation effect on Power Semiconductor
Devices
Tan Cher Ming; Chang Gung University, Taiwan
03:15 PM [2F-4]
Gate Leakage Current analysis using Bayesian
Deconvolution for Accurate Electron/Hole Trapping
Characterizations in 4H-SiC MOSFETs
Shivendra Singh1, Tian-Li Wu1 and Yogesh Chauhan2;
1
International College of Semiconductor Technology,
National Yang Ming Chiao Tung University, Taiwan;
2
Indian Institute of Technology Kanpur, India

Session 2G : Packaging – Mechanical

Properties and Reliability
Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 5, Session Chair: Deepak Arora;
Indian Institute of Technology Jodhpur, India
02:00 PM [2G-1] [Invited]
Prepreg-based FCBGA for Advanced Packaging Substrate
Ken Lee; Simmtech Co., South Korea
02:25 PM [2G-2] [Invited]
Reliability of Heterogeneous Integration (HI) Systems:
Reliability Roadmap to Respond to the needs of HI Roadmap
Stakeholders
Abhijit Dasgupta; University of Maryland, USA
02:50 PM [2G-3]
High Temperature Mechanical Properties of Nano-twinned
Copper
Gulnaz Parween1, Bo-Yan Chen2, Dinh-Phuc Tran2,
Chih Chen2 and Nilesh Badwe1; 1Indian Institute of
Technology Kanpur, India; 2National Yang Ming Chiao
Tung University, Taiwan
03:05 PM [2G-4]
Effect of collet on the die stress during die pick-up
Siva Sai Kishore Palli1, Venkata Rama Satya Pradeep
Vempaty1, Wen How Sim2, Harjashan Veer Singh3;
1
Micron Technology Operations, India; 2Micron
Semiconductor Asia Operations, Singapore;
3
Micron Technology Inc., USA

IEEE Electron Devices Technology and 22

Manufacturing Conference 2024
 Session 2H : Microfluidics and
MEMS Sensors
Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 4, Session Chair : Deleep R. Nair;
Indian Institute of Technology Madras, India
02:00 PM [2H-1] [Invited]
DNA extraction and detection with paper-fluidic device for
urinary tract infections
Siddharth Tallur, Indian Institute of Technology Bombay,
India

02:25 PM [2H-2] [Invited]

Advances in Microvalve and Micro Pre-concentrator
Technology for the Space Atmosphere Monitor Instrument:
From Research to the International Space Station
Mina Rais Zadeh, California Institute of Technology, USA
02:50 PM [2H-3]
Dummy device-based feedthrough cancellation for PZT on
Silicon microcantilever for viscosity sensing
Javed Nadindla1, Akshay Kumar1, Sudhanshu Tiwari2,
Rudra Pratap1 and Gayathri Pillai1, 1Indian Institute of
Science Bangalore, India, 2Purdue University, USA
03:05 PM [2H-4]
Cost-Effective Processing of Flexible Tactile Sensors for
e-skin Applications
Sachin Sharma, Sumit Choudhary, Ranbir Singh, Gopi
Shrikanth Reddy and Satinder Kumar Sharma; Indian
Institute of Technology Mandi, India

Session 2J : Technology For Future Chips

Monday, March 4, 02:00 PM – 03:30 PM
Session Room : Audi 9, Session Chair : David Fried;
Lam Research, USA
02:00 PM [2J-1] [Invited]
Backside Interconnects for Power Delivery – Design,
Manufacturability & Yield
Manjunath Shamanna; Intel, USA
02:30 PM [2J-2] [Invited]
Enabling Next Generation CMOS Scaling Through
Materials Engineering and Process Technology Innovations
Mehul Naik; Applied Materials, USA
03:00 PM [2J-3]
Conjugated Polymer Single-Crystal Thin Films for Trap-Free
SCLC Transport
Chunyan Zhao, Xilin Lai, Xinrui Guo, Ming He, Ru Huang;
Peking University, China

IEEE Electron Devices Technology and 23

Manufacturing Conference 2024
03:15 PM [2J-4]
High quality PVD-MoS2 film on plasma-ALD-SiO2
underlaying material for CFET integration
Naoki Matsunaga, Shinya Imai, Takanori Shirokura,
Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi;
Tokyo Institute of Technology, Japan

Session 3A : Semiconductor Device

Characterization
Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 1, Session Chair : Krishna Bhuwalka,
Huawei, Belgium
03:45 PM [3A-1] [Invited]
Recent Advances in Functional Data Analysis for Electronic
Devices
Shahed Reza; Sandia National Laboratories, USA
04:15 PM [3A-2]
Emerging Germanium Channel Devices on Si Platform for
Next-Generation Semiconductor Technology
Sumit Choudhury, Satinder K. Sharma; Indian Institute of
Technology Mandi, India
04:30 PM [3A-3]
Characterizing Analog Figure of Merits of 5nm Technology
Node FinFETs from 10K to 400K
Shivendra Singh Parihar, Anirban Kar, Weike Wang,
Kimihiko Imura, Yogesh Singh Chauhan; Indian Institute of
Technology Kanpur, India
04:45 PM [3A-4]
Investigation of Self-Heating Effect on the Void Embedded
SOI MOSFETs
Yizhan Liu, Xiaoyan Liu; Peking University, China
05:00 PM [3A-5]
New Steep Subthreshold Slope Device “Gate-Controlled
Carrier Injection SOI-Transistor”
Haruki Yonezaki, Takayuki Mori, Jiro Ida; Kanazawa
Institute of Technology, Japan

Session 3B : Neuromorphic Computing II

Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 9, Session Chair: Sandip Lashkare;
Indian Institute of Technology Gandhinagar, India
03:45 PM [3B-1] [Keynote]
Fully Integrated Memristor Chip for Edge Learning
Huaqiang Wu; Tsinghua University, China
04:15 PM [3B-2] [Invited]
Advancing Cognitive Systems: Leveraging Memristive
Technologies in CMOS Circuit Design for Neuromorphic
Edge Computing
Erika Covi; University of Groningen, The Netherlands

IEEE Electron Devices Technology and 24

Manufacturing Conference 2024
04:45 PM [3B-3] [Invited]
Resistive Memories based on Insulator-Semiconductor
Structures Achieved via Controlled Oxidation of 2D
Layered Materials
Antonio Lombardo; University College London, UK
05:15 PM [3B-3] [Invited]
Novel Low-power and High-speed Memristor based
Digital Circuit Design on Neuromorphic Hardware
Manas Ranjan Tripathy; SRAM Technical University, AP,
India

Session 3C : TCAD and Device Modeling

Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 2, Session Chair : Avinash Lahgere;
Indian Institute of Technology Kanpur, India
03:45 PM [3C-1] [Invited]
TCAD Simulations: Bridging the Gap between Theory and
Experimentation
Arun Kumar Singh; Punjab Engineering College,
Chandigarh, India
04:15 PM [3C-2]
Performance Projection of Negative Capacitance
Complementary FET (NC-CFET): Device-Circuit Co-design
Abhishek Kumar, Anand Bulusu, Avirup Dasgupta;
Indian Institute of Technology Roorkee, India
04:30 PM [3C-3]
Design Space Exploration of Negative Capacitance Effect in
MFIM Structure: A 3D Phase Field Approach
Aayush1, Girish Pahwa2, Yogesh Singh Chauhan1;
1
Indian Institute of Technology Kanpur, India; 2University
of California Berkeley, USA
04:55 PM [3C-4]
Thermal Impedance Model For Multifinger SiGe HBTs
Shubham Pande1, Nidhin K2, Suresh Balanethiram3,
Shon Yadav4, and Anjan Chakravorty1; 1Indian Institute of
Technology Madras, India; 2Intel Bengaluru; 3NIT Karaikal;
4
GlobalFoundries, Bengaluru, India
05:00 PM [3C-5]
Quantum Confinement Imposed Constraints in ULP Circuits
with Junctionless FET
Sandeep Semwal1, Nivedita Rai1, Rohit Kumar Nirala1,
Manish Gupta2 and Abhinav Kranti1; 1Indian Institute of
Technology Indore, India; 2Birla Institute of Technology and
Science-Pilani, Goa

Session 3D : Ferroelectric FETs

Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 8, Session Chair : Pardeep Duhan;
Indian Institute of Technology Ropar
03:45 PM [3D-1] [Invited]
Perspective Roadmap of Advanced HfO2-based Ferroelectric
Field Effect Transistors
Sourav De; National Yang Ming Chiao Tung University,
Taiwan

IEEE Electron Devices Technology and 25

Manufacturing Conference 2024
04:15 PM [3D-2]
Exploring Charge Trapping Dynamics in Si:HfO2-FeFETs by
Temperature-Dependent Electrical Characterization
Mor Mordechai Dahan1, Emanuel Ber1, Or Levit1,
Halid Mulaosmanovic2, Stefan Dünkel2, Johannes Müller2,
Sven Beyer2 and Eilam Yalon1; 1Technion-Israel Institute of
Technology, Israel; 2GlobalFoundries Fab1 LLC & Co.,
Germany
04:30 PM [3D-3]
Dopant-Dependent Flicker Noise of Hafnium Oxide
Ferroelectric Field Effect Transistor
Yannick Raffel, Sourav De and Daniel Hessler; Fraunhofer
IPMS, CNT, Dresden, Germany
04:45 PM [3D-4]
Spike-Time Dependent Plasticity in HfO2-Based Ferroelectric
FET Synapses
YMasud Rana SK1 , Sourodeep Roy1 , Maximilian Lederer2 ,
Yannick Raffel2 , Luca Pirro3 , Talha Chohan3 , Konrad
Seidel2 , Sourav De2 , Bhaswar Chakrabarti1;
1
Indian Institute of Technology Madras, India; 2Fraunhofer
IPMS, CNT, Dresden, Germany; 3GlobalFoundries,
Dresden, Germany
05:00 PM [3D-5]
Design Space for Scaled Ferroelectric Mirror Bit Technology
for High-Density NVM Storage
Paritosh Meihar1, Rowtu Srinu1, Halid Mulaosmanovic2,
Stefan Dunkel2, Sven Beyer2 and Udayan Ganguly1;
Indian Institute of Technology Bombay, India;
2
GlobalFoundries, Dresden

Session 3E : Neuromorphic Devices

Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 6+7, Session Chair: Daniele Ielmini;
Politecnico di Milano, Italy
03:45 PM [3E-1] [Invited]
Large-scale Integrated Circuits with 2D MoS2 for
Neuromorphic Computing
Andras Kis; EPFL, Switzerland
04:10 PM [3E-2] [Invited]
Compute-in-Memory Hardware using 2D Materials-based
Memristive Crossbar Array for Convolution Neural
Networks
Kah-Wee Ang; National University of Singapore,
Singapore
04:35 PM [3E-3] [Invited]
Smart Multifunctional Memory Devices that can Sense,
Store and Compute
Nazek Elatab; KAUST, Saudi Arabia
05:00 PM [3E-4] [Invited]
Spintronics-Based Neuromorphic and Ising Computing
Debanjan Bhowmik; Indian Institute of Technology Bombay,
India

IEEE Electron Devices Technology and 26

Manufacturing Conference 2024
 Session 3F : SiC based Power Devices
Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 3, Session Chair : Sukhendu Deb Roy;
ROHM Semiconductor India
03:45 PM [3F-1] [Keynote]
SiC Materials and Devices for Future Green Society
Shin-ichi Nishizawa; Kyushu University, Japan
04:15 PM [3F-2] [Invited]
Soitec SmartCutTM technology combined with SiC material:
SmartSiCTM engineering substrate for high-voltage power
applications
Walter Schwarzenbach; Soitec, France
04:45PM [3F-3] [Invited]
On the Design of the Drift Layer in Silicon Carbide Power
Devices for Improved Breakdown Voltage and Short
Circuit Performance
Shreepad Karmalkar, Indian Institute of Technology
Bhubaneswar

Session 3G : Memory and Metallization

Reliability
Monday, March 4, 03:45 PM – 05:15 PM
Session Room : Audi 5, Session Chair : Nilesh Goel;
BITS Pilani Dubai Campus
03:45 PM [3G-1] [Invited]
Intermetallic compounds for future ULSI metallization
Junichi Koike; Tohoku University, Japan
04:15 PM [3G-2]
Study of Trap Generation in NAND Flash Tunnel Oxide
using TCAD
Anuj Kumar, Ravi Tiwari, Mohit Bajaj, Denis Dolgos, Lee
Smith, Souvik Mahapatra; Indian Institute of Technology
Bombay, India
04:30 PM [3G-3]
On the Prevalence of Row Hammer Attacks in FeFET Based
Memory Systems
Shubham Pande, Bhaswar Chakrabarti and Anjan
Chakravorty; Indian Institute of Technology Madras, India
04:45 PM [3G-4]
Impact of Free Layer Thickness and Damping Factor
Variation on the Performance of Spin Orbit Torque
Neuron-based of Spiking Neural Networks
Shafin Bin Hamid and Md Zunaid Baten; Bangladesh
University of Engineering and Technology (BUET), Dhaka,
Bangladesh
05:00 PM [3G-5]
Reliable resistive switching of two-dimensional material
based flexible memristor
Conghui Zhang1, Xin Liu1, Tingting Han2, Peisong Liu3 and
Fei Hui1; 1Zhengzhou University, China; 2Soochow
University, China; 3Henan University, China

IEEE Electron Devices Technology and 27

Manufacturing Conference 2024
 Session 3H : Yield and Manufacturing
Monday, March 4, 03:45 PM – 05:15 PM
Session Room: Audi 10, Session Chair: Shinichi Yoshida; Sony, Japan
03:45 PM [3H-1] [Invited]
New paradigm of Yield analysis in Big Data and AI Era in
Semiconductor Manufacturing
Jeffrey David; PDF Solutions, USA
04:10 PM [3H-2]
Expediting manufacturing safe launch with Big Data AI/ML
analytic solutions on the cloud
Helen Yu; Renesas Electronics, USA
04:25 PM [3H-3] [Invited]
Manufacturing readiness to Zero DPPM
Tanya Nigam; SemTecPro, Sunnyvale, USA
04:50 PM [3H-4] [Invited]
Semiconductor Fabs & Sustainability
Neela Ayalasomayajula; Applied Materials, India

Evening Panel Discussion 1

Monday, March 4, 06:30 PM – 07:30 PM
Session Room : Audi 1
Moderator : Ramgopal Rao; BITS Pilani, India
Is there no scope for deep tech semiconductor start-ups in India?
Panelists : Chandrasekhar Nair (Bigtec Private Ltd.),
Suryaprakash Konnanuru (CTO, Ideaspring Capital),
Shantanu Chaturvedi (VP, Transition VC), Dipanjan Gope (CEO,
Simyog Technology Private Limited)

IEEE Electron Devices Technology and 28

Manufacturing Conference 2024
 Poster Session 1

Track – Advanced Memory Technologies (AMT)

Monday, March 4, 06:00 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P1-1] Impact of Doping CsPbBr3 with Organic Iodide Salts on Memory
Performance
Bidisha Nath, Ashutosh Panchal, Praveen C Ramamurthy, Debiprosad
Mahapatra and Gopalkrishna Hegde;
[P1-2] Trade-off Between Thermal Budget and Thickness Scaling: A
Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films
Sub-5nm
Chui-Yi Chiu, Sourav De, Chen-Yi Cho and Tuo-Hung Hou
[P1-3] Conductance change property of the ReRAM with Au-doped
HfOx switching layer under DC voltage pulses
Masakazu Tanaka, Shinji Okayasu, Tomohiro Shimizu, Takeshi Ito and
Shoso Shingubara
[P1-4] Design Guidelines for Domain-Wall-Based-Synapse Devices –
Thermal Stability and Depinning Current Requirements
Guntas Kaur and Tanmoy Pramanik
[P1-5] Enhanced Polarization, Endurance, and Long Retention in Low
Temperature Processed W/Hf0.5Zr0.5O2/W Ferroelectric Capacitor for
Back-End-of-Line Integration
Md Hanif Ali, Adityanarayan Pandey, Soham Shirodkar, Rowtu Srinu,
Paritosh Meihar, Udayan Ganguly and Veeresh Deshpande
[P1-6] Improved Memory Density and Endurance by a Novel 1T3C FeFET
for BEOL Multi-level Cell Memory
Runteng Zhu, Yuejia Zhou, Chuanlin Sun, Weiqin Huang, Junchen Dong,
Ru Huang and Kechao Tang
[P1-7] Vortex Spin Torque Nano Oscillator-based PUF and TRNG Design
for Lightweight Security Solutions
Kunal Kranti Das, Sandeep Soni, Farshad Moradi, Sonal Shreya and
Brajesh Kumar Kaushik
[P1-8] Secure and Reliable Single-Ended 10T SRAM Cell
Ayan Sharma, Syed Farah Naz and Ambika Prasad Shah
[P1-9] ReCAM: Resistive RAM Digital Content Addressable Memory
Using Novel 3T1R Bitcell
Radheshyam Sharma, Narendra Singh Dhakad, Govindu Sathvik
Reddy, Dr. Vishal Sharma and Dr. Santosh Kumar Vishvakarma
[P1-10] On-Voltage Designability by Triangular Barrier Engineering in
Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM
Hemant Kumar, Jayatika Sakhuja, Sandip Lashkare and Udayan Ganguly
[P1-11] Investigation and optimization of plug height and bottom recess
depth of 3D NAND Flash memory
Dibyadrasta Sahoo, Ankit Gaurav and Sanjeev Manhas
[P1-12] Resistive switching in Ag/GO/Ag based lateral device on
flexible PET Substrate
Anita Khichar and Arnab Hazra

IEEE Electron Devices Technology and 29

Manufacturing Conference 2024
[P1-13] Bilayer MoS2 Based (2×2) Memristive Crossbar Array for
Neuromorphic Applications
Saurabh Yadav, Chandrabhan Patel, Sumit Chaudhary, Kumari Jyoti,
Shruti Ghodke and Shaibal Mukherjee
[P1-14] Analysis of 1T-1M HfOX-based Resistive Switching Device for
Artificial Neural Network Hardware Implementation
Sukesh Gupta, Mani Shankar Yadav, Venkata Kalyan Tavva and
Brajesh Rawat

Track – Disruptive Technologies (DT)

Monday, March 4, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P1-15] Design and simulation of micro-pillar cavity based single photon
source
Manish Kumar Sahu, Naresh Babu Pendyala, Prashant Varma, Punam
Pradeep Kumar and Apurba N Bhattacharya
[P1-16] Impact of co-integration on the performance of full CMOS based
Hybrid SET-FET circuits for scalable quantum computing using FinFET
technologies
Sujit Kumar Singh, Deepesh Sharma, Purushothaman Srinivasan and
Abhisek Dixit
[P1-17] Fault Tolerance of Oscillatory Neural Network using PMO
Oscillator
Sai Shubham, Siddharth Mohanty and Sandip Lashkare
[P1-18] In-memory Computing for Bit-wise Logical Operations using
Capacitor-less Silicon-on-Insulator MOSFET
Prateek Sharma, Jaisingh Pal and Sandip Lashkare
[P1-19] Resistance Drift Reset State and Read Voltage Dependencies
in Phase Change Memory
Rivka-Galya Nir-Harwood, Mayan Hochler, Einav Yunger and Eilam
Yalon
[P1-20] Nonpolar Neuron for ANN-SNN Conversion Toward Ternary
Spiking Neural Network
Jiawei Fu, Xinyu Wen, Qi Chen, Yuhui He and Xiangshui Miao
[P1-21] MCA-based Model for Automated Pneumonia Disease Detection
using Machine Learning
Kumari Jyoti, Saurabh Yadav, Chandrabhan Patel, Mayank Dubey,
Sumit Chaudhary, Ram Bilas Pachori and Shaibal Mukherjee
[P1-22] Temperature Resilient Single-Transistor FDSOI Neuron for
Reliable Neuromorphic Computing
Rajakumari V, Aparna Krishna Kumar, Rameez Raja Shaik and
K P Pradhan

Track – Emerging Materials and Devices (EMD)

Monday, March 4, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P1-23] Monolayer HfS3: A Potential Candidate for Low-Power and
High-Performance Field-Effect Transistors
Ateeb Naseer, Somnath Bhowmick, Amit Agarwal and Yogesh Singh
Chauhan

IEEE Electron Devices Technology and 30

Manufacturing Conference 2024
[P1-24] Impact of Electric Field on the Perpendicular Magnetic Anisotropy
of CrMnS2I2 Monolayer- A DFT Perspective
Neha Mishra, Prabhat Ranjan, Avirup Dasgupta and Sourajeet Roy
[P1-25] NiO/Ni2O3 based top gated junctionless field effect device for
selective Cr(VI) ion detection in water
Shreyansh Mishra, Sukanya Mahalik, Apabrita Sengupta, Abhijit Eshore,
Prasanta K. Guha and Sayan Dey
[P1-26] Understanding Trap-Induced Barrier Height Fluctuations in
Nickel-Silicon Contacts for Advanced Semiconductor Technology
Deepak Kumar Sharma, Arjun Datta, Jatinder Pal Singh, Kanishk K,
Rohan Srivastava, Gourab Das, Jyoti Kedia, Sanjeev Kumar,
Vivek Kumar and Arun Kumar Singh
[P1-27] Magnetic Soliton MTJ Devices for Neuromorphic Computing
Applications
Aijaz Lone, Daniel N. Rahimi, Hossein Fariborzi and Gianluca Setti
[P1-28] Electronic and hole mobilities in wide band-gap monolayer
tungsten carbide
Tushar Sharma, Rishabh Saraswat, Sitangshu Bhattacharya and
Rekha Verma
[P1-29] Photoconduction Properties in Germanium Sulfide Nanosheets on
Rigid and Flexible Substrates
Ambika Subramanian, Vasanthan Thirunavukkarasu, Rajesh Kumar
Ulaganathan, Raman Sankar, Wen Siang Lew and Chang-Yu Lin
[P1-30] Understanding Hysteresis For Intrinsic Defects in TMD Transistors
Rupali Srivastava, Srest Somay, Amrita Singh and Krishna
Balasubramanian
[P1-31] Investigation on Transportation Mechanisms of InSnO/ZnO
Heterojunction Transistors
Chuanlin Sun, Jingye Xie, Shuhan Wang, Kai Zhao, Junchen Dong,
Zheng Zhou, Dedong Han and Xing Zhang
[P1-32] Behavior of Circular Field-free Current-driven Easy-cone State
Oscillator under the Presence of Thermal Noise
Al Maksud, Sheikh A.H. Fuad, Tasnim Tamanna and Orchi Hassan
[P1-33] Design of experimental test setup to study stochastic switching
and stochastic resonance in nonlinear systems
Harivignesh S, Madhav Ramesh and Arvind Ajoy
[P1-34] Device Structure Optimization for Rb2SnI6-based Halide
Perovskite Solar Cell using SCAPS
Shivam Aggarwal and Tanmoy Maiti
[P1-35] Solution-processed Forming-free ALPO - RRAM based Artificial
Synaptic Device with 3 orders of Conductance – Modulation
Nitupon Dihingia and Sandip Mondal
[P1-36] Photocatalytic and Optical Properties of TiO2/MoSSe
Monolayer for Enhanced IR absorption
Prabhat Ranjan, Neha Mishra, Sourajeet Roy, Amit Agarwal and
Avirup Dasgupta
[P1-37] WKB model of ferroelectric tunnel junctions for memory
applications: voltage-dependent screening and electrostriction
effects
Deepali Jagga, Saurav De and Artur Useinov

IEEE Electron Devices Technology and 31

Manufacturing Conference 2024
[P1-38] Compact STT/SHE-MTJ Model with Monte-Carlo Independent
Thermal Noise
Jagadish Rajpoot and Shivam Verma
[P1-39] A Novel Approach for Enhancing Mobile Audio Performance
with Graphene-Infused Teracotta Acoustic Sound Amplifiers
Rajalekshmi Tr, Shilpa Pavithran, Rinku Rani Das and Alex James
[P1-40] Fabrication Of N-type Organic Thin-film Transistor With
Polymeric Dielectric Processed With Different Solvents
Ashutosh Panchal, Ankit Malik and Praveen C Ramamurthy
[P1-41] Enhanced PPF index in zinc oxide based optoelectronic
synapse
Roshni Oommen, Kiran Jose and Aswathi R Nair
[P1-42] Exploring Phase and Bandgap Variations in Gallium Oxide
Using Mist-based Chemical Vapor Deposition System
Shiv Kumar, Arnab Mondal, Anand Pandey, Subhashis Das and
Ankush Bag
[P1-43] Implementing Bidirectional Logic with Backhopping in Magnetic
Tunnel Junctions
Shafin Bin Hamid, Ramit Dutta, Orchi Hassan and Md. Zunaid Baten
[P1-44] Planar Memristor Configuration using CuO thinfilms for Resistive
Switching
Sarath Chandra Jampani, Sumanth Arige and Tejendra Dixit
[P1-45] Exploring Interfacial Influences: P3HT Film Formation on
ODPA-Treated Aluminum Oxide Surface
Ankit Malik, Ashutosh Panchal, Utpreksh Patbhaje, Mayank Shrivastava
and Praveen C. Ramamurthy

Track – Logic Devices (LD) and Design

Technology Co-Optimization (DTCO)
Monday, March 4, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3

[P1-46] Memory effects in 45-nm PDSOI MOSFETs at Cryogenic

Temperatures for Quantum Computing Applications
Sumreti Gupta, Deepesh Sharma, Purushothaman Srinivasan and
Abhisek Dixit
[P1-47] Ultra Low Leakage IoT Design in 22FDSOI
Navneet Jain, Arif Siddiqi, Deepti Pant, David Pritchard, Randy Wolf,
Sunil Kumar, Juhan Kim, Ahmed Shibly and Nigel Chan
[P1-48] Exploring Dual threshold in a Double Gated TIG JLT for a logic
Application
Tika Ram Pokhrel and Alak Majumder
[P1-49] Design of Low Power Ternary Inverter with Line Tunneling based
Silicon Nanotube Tunnel FETs
Navneet Kaur Saini, Raghavendra Saxena, Mamidala Jagadesh Kumar
Anuj Dhawan and Ankur Gupta
[P1-50] Benchmarking IWO-based Logic Circuits for Monolithic 3D
Integration
Sufia Shahin, Shubham Kumar, Swetaki Chatterjee, Hussam Amrouch
and Yogesh Singh Chauhan

IEEE Electron Devices Technology and 32

Manufacturing Conference 2024
[P1-51] Energy-Efficient Logic Switches Designed by Combining
Band-to-Band Tunneling and Thermionic Injection in 2-D Semiconductors
Ateeb Naseer, Keshari Nandan, Somnath Bhowmick, Amit Agarwal and
Yogesh Singh Chauhan
[P1-52] Performance Analysis of Forksheet FETs compared to Nanosheet
FETs for sub-3 nm Technology Node
Yeasin Arafat Pritom, Hridita Biswas and Mainul Hossain
[P1-53] AC Performance Benchmarking of Forksheet FET using Ring
Oscillator and 6T-SRAM Cell
Hafeez Raza and Avinash Lahgere
[P1-54] Reduction of subthreshold swing by tuning the thickness of the
buffer layer in asymmetric source-drain electrode of a low operating
voltage TFT
Utkarsh Pandey and Bhola Nath Pal
[P1-55] Area Efficient High Speed Absolute Difference Architecture for
Multimedia Applications
Garima Gupta, Hardik Sarraf, Bharat Garg and Jawar Singh
[P1-56] Short Channel Effects Optimized 7nm SI-FinFET for DRAM
Application
Ninad Kamble and Kankat Ghosh

Track – Power and Energy Devices (PED)

Monday, March 4, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3

[P1-57] A Novel Low Loss Planar Gate LIGBT With P-type Buried Layer
A Novel Low Loss Planar Gate LIGBT With P-type Buried Layer
[P1-58] Fully/partially suspended gate SiC-based FET for power circuit
applications
Suvendu Nayak, Saurabh Lodha and Swaroop Ganguly
[P1-59] Enhanced Optoelectronic Performance of Hexagonal InP
Nanowire Solar Cell using Plasmonic Al Nanoparticles
Manisha Rautela and Jitendra Kumar
[P1-60] Silicon Carbide Dmosfet Design Adaptation For Low Interface
Trap Density
Akul Kumar Singh, Suvendu Nayak, Hema Lata Rao Maddi, Susanna Yu,
Swaroop Ganguly and Anant K. Agarwal
[P1-61] Analytical modeling for optimum energy harvesting using
Triboelectric Nanogenerators under steady state operation
Rohin Gupta and Amit Verma
[P1-62] GaN HEMT for power electronics and biosensing applications
Nidhi Chaturvedi, Rajeev Taliyan, Ashok Chauhan, Anil Kumar Saini,
Shivanshu Mishra, Pharyanshu Kachhawa, Rajiv Ranjan Thakur, Amber
Kumar Jain, Kuldip Singh and Manish Kumar Hooda

[P1-63] Performance Comparison of Transparent and Opaque substrate

P3HT:PCBM Organic Solar Cells
Anil Kumar Panda H. and S. Sundar Kumar Iyer

IEEE Electron Devices Technology and 33

Manufacturing Conference 2024
[P1-64] Modeling of heterojunction perovskite solar cells: A
semi-analytical approach
Susomon Dutta, Chettypalayam R Selvakumar and Revathy Padmanabhan
[P1-65] Image Analysis of solar cells using absolute electroluminescence
Hemavathi R, Umavathi M, Sushmitha K V, Swathi S, Praveen C.
Ramamurthy and Jeykishan Kumar K
[P1-66] Design and Performance testing of Photovoltaic arrays using
low-cost Current-Voltage module device
Varun Adiga, Parthasarathy S Raghavan, Bhaskar Krishnaswamy and
Praveen C Ramamurthy
[P1-67] A Study in the Change of Morphology and Optical Properties of
Electric Field Assisted Methyl Ammonium Lead Tri-Iodide Perovskite Thin
Films without Anti-Solvent Approach
Soumyapdipta Ray and Praveen C Ramamurthy
[P1-68] Experimental Investigation of Temperature Effect in Laterally
Diffused Power MOSFET
Amit Kumar Singh, Yash Agrawal and Brajesh Rawat
[P1-69] Dielectric Engineering to Enhance Breakdown Voltage of
β-Ga2O3 MOSFET
Akash Patnaik, Ayushi Maurya and Pankaj Sharma
[P1-70] Analysis of Performance Limits in Current-Matched Tandem Solar
Cells
Anupam Yedida and Revathy Padmanabhan

Track – RF Devices and Circuits (RD)

Monday, March 4, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P1-71] Development of C-band and X-band MMIC SPDT switch using
Indigenous GaN HEMT Technology
Rakhi Kumari, Umakant Goyal and Meena Mishra
[P1-72] X-band Monolithic GaN HEMT LNA based on Indigenous
Process
Pritam Sinha, Umakant Goyal and Dr. Meena Mishra
[P1-73] X-band GaN LNA MMIC Using an Emprical Noise Model
Mohammad Zaid, Purnima Kumari, Mohammad Sajid Nazir,
Umakant Goyal, Meena Mishra and Yogesh Singh Chauhan
[P1-74] A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz
SATCOM LNA in 130 nm CMOS
Hari Kishore Kakara, Indrajit Das and Venkata Vanukuru
[P1-75] DC and RF Characteristics Study of III-Nitride/β-Ga2O3
Nano-HEMT with the variation of Relative Gate Positions
G. Purnachandra Rao, Trupti Ranjan Lenka, Samadrita Das and Hieu
Pham Trung Nguyen
[P1-76] Innovative solution for ON-WAFER RF characterization of high
GaN HEMT power devices
Ashish Jindal, Sunil Singh, Poonam Singh, S K Tomar and Meena Mishra
[P1-77] A 40W high power broadband amplifier MMIC design for
C-BAND radar applications
Ashish Jindal and Meena Mishra

IEEE Electron Devices Technology and 34

Manufacturing Conference 2024
[P1-78] High Capacitive Ratio Molybdenum-based RF MEMS Capacitive
shunt switch using reduced fabrication steps
Niharika Narang, Piyush Kumar, Ananjan Basu, Pushpapraj Singh and
Pranav Kumar Shrivastava
[P1-79] Comparative Performance Analysis of Impedance Line
Segmentation Algorithm
Neha Bajpai and Yogesh Singh Chauhan
[P1-80] Multi-functional Time-Modulated Metasurface as a Transmissive/
Reflective FSS and an On-Air Frequency Mixer
Anand Kumar, Saikiran Kongari, Yugesh Chandrakapure and Debdeep
Sarkar
[P1-81] Investigation of Performance in RF GaN MIS-HEMTs with Leakage
Current Analysis Using Emission Microscopy (EMMI)
Chin-Ya Su, Meng-Che Tsai, Anant Johari, Ankur Gupta, Rajendra Singh
and Tian-Li Wu
[P1-82] Fabrication of Millimeter-Band Electromagnetic Structures by Laser
Micromachining
Nikita Ryskin, Dmitrii Nozhkin, Andrei Starodubov, Roman Torgashov,
Ilya Kozhevnikov, Viktor Galushka, Alexey Serdobintsev, Alexey
Lebedev and Anton Kozyrev
[P1-83] High performance Ultra-Compact Co-planar Waveguides using
Slow wave Inductive and capacitive loading
Niharika Narang, Piyush Kumar, Pranav Kumar Shrivastava, Ananjan
Basu and Pushpapraj Singh

IEEE Electron Devices Technology and 35

Manufacturing Conference 2024
 Planning Your Tuesday

Plenary Talk
Tuesday, March 5, 09:00 AM – 10:40 AM
Session Room : Audi 1 + 2 + 3, Session Chair : Prof. Navakanta Bhat;
Indian Institute of Science Bangalore, India
09:00 AM Plenary 3
Semiconductor Systems Driving AI
Balajee Sowrirajan; Samsung Electronics, India
09:50 AM Plenary 4
From Ferroelectric Materials to Enhanced Semiconductor
Devices
Thomas Mikolajick; NaMLab GmbH, Germany

Oral Sessions

Session 4A : Gate-All-Around (GAA) Devices

Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room: Audi 1, Session Chair: Sujith Subramaniam;
IMEC Belgium
11:00 AM [4A-1] [Invited]
Forksheet Field-Effect Transistors for Area Scaling and
Gate-Drain Capacitance Reduction in Nanosheet-based
CMOS Technologies
Hans Mertens; IMEC, Belgium
11:25 AM [4A-2] [Invited]
Stacked Complementary Field-Effect Transistors: Promises
and Challenges
Mansun Chan; Hong Kong University of Science &
Technology, Hong Kong
11:50 AM [4A-3] [Invited]
GAA Technology Innovations for 2nm Logic node and
Beyond
El Mehidi BAzizi; Applied Materials, USA
12:15 PM [4A-4]
Towards Improved Nanosheet-Based Complementary Field
Effect Transistor (CFET) Performance Down to 42nm
Contacted Gate Pitch
Thomas Chiarella, Philippe Matagne, Hans Mertens, Maryam
Hosseini, Xiuju Zhou, Pierre Eyben, Hiroaki Arimura, Anshul
Gupta, Olivier Richard, Christel Drijbooms, Rudy Caluwaerts,
Naoto Horiguchi, Jérôme Mitard; IMEC, Belgium

IEEE Electron Devices Technology and 36

Manufacturing Conference 2024
12:30 PM [4A-5]
Multi-VT Options at Scaled Vertical Pitch in Gate-All-Around
Nanosheet Devices by Independent Inner-Outer Work-
function Tuning
Gautam Gaddemane1, Krishna Bhuwalka2, Gerhard Rzepa3,
Pieter Schuddinck1, Hiroaki Arimura1, Philippe Matagne1,
Hao Wu2, Naoto Horiguchi1, Geert Hellings1, Changze
Liu2; 1IMEC Belgium; 2Huawei Technologies Belgium;
3
GTS Austria
12:45 PM [4A-6]
Dissecting Parasitic Capacitance in Nanosheet FETs: An
Analytical Perspective
Aishwarya Singh, Om Maheshwari and Nihar Mohapatra;
Indian Institute of Technology Gandhinagar, India

Session 4B : In-Memory Computing I

Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 9, Session Chair : Manan Suri;
Indian Institute of Technology Delhi
11:00 AM [4B-1] [Keynote]
Ferroelectric Non-volatile Capacitive Synapse for Charge
Domain Compute-in-Memory
Shimeng Yu; Georgia Institute of Technology, Atlanta, USA

11:30 AM [4B-2] [Invited]

Computation-in-Memory (CiM) for AI Accelerators &
Neuromorphic Computing
Ken Takeuchi; University of Tokyo, Japan
12:00 PM [4B-3] [Invited]
Can we Engineer Energy Efficient Switching Devices with
High-k for In-Memory Applications?
Durga Misra; New Jersey Institute of Technology, USA
12:30 PM [4B-4]
RRAM IMC based efficient Analog Carry Propagation and
Multi-bit MVM
Chithambara Moorthii J, M Vineeth Mourya, Harshit Bansal,
Deepak Verma and Manan Suri; Indian Institute of
Technology Delhi, India
12:45 PM [4B-5]
A New 1C1T1R nv-TCAM with Simultaneously Hybrid
Ferroelectricity and Memristor Layers Feasible for
Ultra-highly-dense and High-performance In-memory-searching
Y. L. Hsueh1, R. Q. Lin1, Y. X. Huang1, Y. H. Lin1,
K. H. Chang1, T. H. Shen1, E R. Hsieh1 and S Simon
Wong2; 1National Central University, Taoyuan city,
Taiwan; 2Stanford University, USA

IEEE Electron Devices Technology and 37

Manufacturing Conference 2024
 Session 4C : Cryogenic CMOS Compact
Modeling
Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room: Audi 2, Session Chair: Arvind Ajoy;
Indian Institute of Technology Palakkad, India
11:00 AM [4C-1] [Invited]
Compact Modeling of Advanced MOSFETs for Cryogenic IC
Design
Girish Pahwa; University of California Berkeley, USA
11:30 AM [4C-2] [Invited]
A Methodology for PDK Re-Centring Using TCAD and
Experimental Data for Cryogenic Temperatures
Tapas Dutta; University of Glasgow, UK
12:00 AM [4C-3]
Analysis and Modeling of Negative Transconductance in
Zero-Threshold Voltage MOSFETs at Cryogenic
Temperatures
Wajid Manzoor, Aloke K. Dutta and Yogesh Singh
Chauhan; Indian Institute of Technology Kanpur, India
12:15 PM [4C-4]
Cryogenic Compact Modeling for Sub-5nm Fin Width Bulk
FinFETs for Quantum Computing Applications
Deepesh Sharma, Sumreti Gupta, Sujit Kumar Singh and
Abhisek Dixit; Indian Institute of Technology Delhi, India
12:30 PM [4C-5]
A Physics-Oriented Model of Cryogenic MOSFETs including
the Subthreshold Kink Effects
Xinyue Zhang, Fangxing Zhang, Zirui Wang, Runsheng
Wang, Ru Huang and Lining Zhang; Peking University, China
12:45 PM [4C-6]
Extension of ASM-HEMT Framework for Cryogenic
Temperatures
Mohammad Nazir, Raghvendra Dangi, Mohammad Zaid,
Ahtisham Pampori and Yogesh Singh Chauhan;
Indian Institute of Technology Kanpur, India

Session 4D : 2D Materials and Devices II

Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 6+7, Session Chair : Yury Illarionov;
Southern University of Science and Technology, China
11:00 AM [4D-1] [Invited]
TMDC channel for low-power-density 3D-stacked FETs
Hitoshi Wakabayashi; Tokyo Institute of Technology, Japan
11:25 AM [4D-2] [Invited]
Ultra-clean interfaces between 2D MoS2, contact metals,
and high K dielectrics
Manish Chhowala; University of Cambridge, UK
11:50 AM [4D-3] [Invited]
Guidelines of wafer scale growth for 2D integration FAB
readiness
Salim El Kazzi; Aixtron, Germany

IEEE Electron Devices Technology and 38

Manufacturing Conference 2024
12:05 PM [4D-4]
Reduction of contact resistance to PVD-MoS2 film using
aluminum–scandium alloy (AlSc) edge contact
Shinya Imai, Ryosuke Kajikawa, Takamasa Kawanago,
Iriya Muneta, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka
Tomiya, Kuniyuki Kakushima and Hitoshi Wakabayashi;
Tokyo Institute of Technology, Japan
12:20 PM [4D-5]
Robust Growth of Electronic Grade p-type Large Area 2D
WSe2 and High-performance PMOS Transistor
Biswajeet Nayak1, Rupali Verma2, Purbasha Ray1, Suman
Kumar Chakraborty1, Mayank Shrivastava2, and Prasana
Kumar Sahoo1; 1Indian Institute of Technology Kharagpur;
2
Indian Institute of Science Bangalore
12:45PM [4D-6]
Enhanced optoelectronic and electrical characteristics in
nanopatterned 2D dielectric (hBN)/ semiconductor (WS2)
field effect transistors
Poulomi Chakrabarty, Sera Sen, Srilagna Sahoo and
Saurabh Lodha; Indian Institute of Technology Bombay, India

Session 4E : AI/ML in Process Control

Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 8, Session Chair: Tomasz Brozek;
PDF Solutions, USA
11:00 AM [4E-1] [Invited]
Chips Making Chips: How Virtualization, Digital Twins and
Machine Learning are Accelerating the Spiral of Innovation
David Fried; Lam Research, USA
11:30 AM [4E-2] [Invited]
AI driven Process Diagnostic & Control: Device
Manufacturing Jae-Yong Park; Samsung, USA
11:55 AM [4E-3]
Enabling process control though predictive design and
virtual metrology for high product mix manufacturing
Hyung Joo Lee1, Sanghyun Choi1, Sudheesh Krishnankutty2,
Raghavendra Botta2, Nathan Greeneltch3 and Srividya
Jayaram3; 1Siemens EDA, South Korea; 2Siemens EDA,
India; 3Siemens EDA, USA
12:10 PM [4E-4] [Invited]
Coupling Reactor-scale and Feature-Scale Simulations:
ProcessTwin™ for Unit Processes
Rajesh Sathiyanarayanan; Applied Materials, India
12:35 PM [4E-5] [Invited]
Virtual Process Modeling and Virtual Fabrication in
Semiconductor Manufacturing Training
Dinesh Munireddy; Lam Research, USA

IEEE Electron Devices Technology and 39

Manufacturing Conference 2024
 Session 4F : Package Manufacturing
Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 3, Session Chair : Nilesh Badwe;
Indian Institute of Technology, Kanpur, India
11:00 AM [4F-1] [Keynote]
Predictive Modeling and Design for Board Level Solder Joint
Reliabilities under Temperature Cycling
Faxing che; Micron Technologies Singapore
11:30 AM [4F-2] [Invited]
Innovative Wafer Level Equipment Solutions for
Heterogeneous Integration
Chee Ping Lee; Lam Research, USA
12:00 PM [4F-3] [Invited]
Heterogeneous Integration for Multi Chiplet Advanced
Packaging
Surya Bhattacharya; Institute of Microelectronics, Singapore
12:25 PM [4F-4]
Evolution of Maskless Digital Lithography A game-changer for
Advanced Semiconductor Packaging
Ashwini Aggarwal; Applied Materials, India

Session 4G : Logic and 2D Material Reliability

Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 5, Session Chair : Souvik Mahapatra;
Indian Institute of Technology Bombay, India
11:00 AM [4G-1] [Invited]
Nanoscale Insights into the Degradation Mechanisms of 2D
Dielectrics
Kalya Shubhakar, SUTD Singapore
11:30 AM [4G-2]
Impact of Gate Insulator Process on NBTI in FinFETs and
Resulting Ring Oscillator Degradation Under Normal and
Overclocking Usage Conditions
Arnav Shaurya Bisht, Payel Chatterjee and Souvik
Mahapatra, Indian Institute of Technology Bombay, India
11:45 AM [4G-3]
Unveiling the Hidden Impact of Self-Heating on Ferroelectric
FinFET and FDSOI based In-Memory Computing
Swetaki Chatterjee1,2, Nistha Baruah2,3, Swati Deshwal1,
Anirban Kar1,4, Om Prakash2, Shivendra Singh Parihar1,2,
Yogesh Singh Chauhan1, and Hussam Amrouch4;
1
Indian Institute of Technology Kanpur, India;
2
University of Stuttgart, Germany; 3National Institute of
Technology Silchar, India; 4Technical University of Munich
(TUM), Germany
12:00 PM [4G-4]
A TCAD Framework for HCD in n-MOSFETs for PMIC
Applications
Himanshu Diwakar, Souvik Mahapatra; Indian Institute of
Technology Bombay, India

IEEE Electron Devices Technology and 40

Manufacturing Conference 2024
12:15 PM [4G-5]
Impact of Area-to-Perimeter Ratio Layout Effect on TDDB in
45-nm PDSOI N-channel FETs
Asifa Amin1, Aarti Rathi1, Purushothaman Srinivasan2,
Oscar Huerta Gonzalez2 and Abhisek Dixit1; 1Indian
Institute of Technology Delhi, India; 2GlobalFoundries,
Malta, NY, USA
12:30 PM [4G-6]
Ultra-Fast Oxide Traps in Sub-20-nm DRAM Technology:
from Characterization to Physical origin identification
Da Wang1, Yong Liu1, Yongkang Xue1, Pengpeng Ren1,
Zixuan Sun2, Zirui Wang2, Yueyang Liu3, Zhijun Cheng4,
Haiyang Yang4, Xiangli Liu4, Blacksmith Wu4, Kanyu Cao4,
Runsheng Wang2, Zhigang Ji1 and Ru Huang2; 1Shanghai
Jiao Tong University, China; 2Peking University, China;
3Chinese Academy of Sciences, China; 4Changxin Memory
Technologies, Inc., China

Session 4H : Si, SiGe, III-V Technologies

for RF Applications
Tuesday, March 5, 11:00 AM – 01:00 PM
Session Room : Audi 4, Session Chair : Suresh Balanethiram;
NIT, Puducherry
11:00 AM [4H-1] [Invited]
CMOS and SiGe Technologies for SATCOM Circuits and
Systems
Venkata Vanukuru; GlobalFoundries, India
11:30 AM [4H-2] [Invited]
Next Generation SiGe HBTs for Energy Efficient Microwave
Power Amplification
Soumya Ranjan Panda; University of Bordeaux, France
12:00 PM [4H-3] [Invited]
Class BJF-1: Pushing the boundaries of the performance of
RF Power Amplifiers
Merlyne De Souza; University of Sheffield, UK
12:30 PM [4H-4]
InP/GaInP Composite-Collector for Improved Breakdown
Voltage in the InP/GaAsSb DHBTs
Akshay Kumar Mahadev Arabhavi1, Sara Hamzeloui1,
Wei Quan2, Filippo Ciabattini1, Olivier Ostinelli1 and
Colombo Bolognesi1; 1MWE Laboratory, ETH-Zurich,
Switzerland; 2Albis Optoelectronics AG, Switzerland
12:45 PM [4H-5]
Characterization and Experimental Validation of Self
Heating in RF LDMOS Transistor using BSIM-BULK Model
Ayushi Sharma1, Shivendra Singh Parihar1, Yawar Hayat
Zarkob1, Weike Wang2, Kimihiko Imura2, Praveen Dwivedi1
and Yogesh Singh Chauhan1; 1Indian Institute of Technology
Kanpur, India; 2MaxLinear Inc., Carlsbad, California, USA

IEEE Electron Devices Technology and 41

Manufacturing Conference 2024
 Session 5A : Alternate Devices and
Computing Options
Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 1, Session Chair : Kaushik Nayak;
Indian Institute of Technology Hyderabad
02:00 PM [5A-1] [Keynote]
Integrated Ferroelectric Devices for Energy Efficient
Computing
Sayeef Salahuddin; University of California Berkeley, USA
02:30 PM [5A-2] [Invited]
Reliable Brain-inspired Computing using Ferroelectric
Transistors: Hope or Hype?
Hussam Amrouch; Technical University Munich, Germany
03:00 PM [5A-3] [Invited]
Scalable Silicon Qubit Operation for Large-Scale Integrated
Quantum Computer
Ryuta Tsuchiya; Hitachi Cambridge Laboratory, UK

Session 5B : Flash Memories

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 9, Session Chair : Tomoya Sanuki; Kioxia
02:00 PM [5B-1] [Invited]
3D NAND Scaling Paradigm in the AI Era
Akira Goda; Micron Technologies, USA
02:30 PM [5B-2] [Invited]
Unmasking Vulnerabilities: The Provocative Dance of Device
Physics in Flash Storage Security
Biswajit Ray; Colorado State University, USA
03:00 PM [5B-3]
Cycling Condition Impacts on 3D QLC NAND Reliability
M. Dean Sciacca1, Trinadhachari Kosuru2 and Nikolaos
Papandreou3; 1IBM, USA; 2IBM, India; 1IBM Research
Europe, Switzeland

Session 5C : Ab-initio Simulation and

Modeling
Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 2, Session Chair : Rajat Vishnoi; Micron India
02:00 PM [5C-1] [Invited]
Ab initio Modeling of quantum transport in low-dimensional
materials and devices
Sabyasachi Tiwari; The University of Texas at Austin, USA
02:30 PM [5C-2]
First principles Modeling perspective for 2D channel – 3D
oxide interfaces
Fabian Ducry, Benoit Van Troeye, Cesar J. L. de la Rosa,
Gouri S. Kar, Geoffrey Pourtois and Aryan Afzalian; IMEC,
Belgium

IEEE Electron Devices Technology and 42

Manufacturing Conference 2024
02:45 PM [5C-3]
Ohmic Au-MoS2 Contacts Enabled by Re Adsorbed MoS2
Source/Drain Regions: An Ab-initio Quantum Transport Study
Saurabh Kharwar, Soham Sinha and Tarun Kumar Agarwal;
Indian Institute of Technology Gandhinagar, India
03:00 PM [5C-4]
Understanding and Predicting the Activation Energy of
Oxygen Migration in Pr0.5Ca0.5MnO3 : A DFT study
Shashank Inge, Aditya Narayan Pandey, Udayan Ganguly
and Amrita Bhattacharya; Indian Institute of Technology
Bombay, India
03:10 PM [5C-5]
Position-dependent Voltage-controlled Switching of
Perpendicular Ferromagnet on a Topological Insulator:
A micromagnetic simulation study
Vinod Naik Bhukya, Rik Dey and Yogesh Singh Chauhan;
Indian Institute of Technology Kanpur, India

Session 5D : Thin Film Devices

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 6+7, Session Chair : Pavan Nukala; IISc
02:00 PM [5D-1] [Invited]
Materials and Device Technologies for Low-Temperature
Integration
Alwin Daus; University of Freiburg, Germany
02:30 PM [5D-2] [Invited]
Formation techniques for upper active channels in monolithic
3D integration
Rino Choi; Inha University, South Korea
02:50 PM [5D-4]
Comparative Analysis of Switching Efficiency of GeTe and
VO2 based RF Switches
Abhishek Mishra, Yogesh Singh Chauhan and Amit Verma;
Indian Institute of Technology Kanpur, India
03:05 PM [5D-5]
Tailoring SWNT Thin-Film Transistor Performance: The Role
of CuI Heterostructures
Dhananjay Mishra, Seung Gi Seo and Sung Hun Jin;
Incheon National University, South Korea

Session 5E : Sensors and Biosensors I

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 8, Session Chair : Shweta Agarwala;
Aarhus University, Denmark
02:00 PM [5E-1] [Invited]
Printed Electronic Cyrogels for in-vivo Plant Monitoring
Gregory Whiting; University of Colorado Boulder, USA
02:30 PM [5E-2]
Ultrasensitive Photo-Thermal Multimodal Sensory based on
Self-Doping Modulation of Bi2O2Se Semiconductor
Liu Shuo, Xu Lei, Liu Junling, Huang Ru and He Ming;
Peking University, China

IEEE Electron Devices Technology and 43

Manufacturing Conference 2024
02:45 PM [5E-3]
Physisorption Interaction of Nucleobases on ZrGeTe4 Using
Density Functional Theory Study for Biomolecule Sensing
Mohd Mufeed, Ankit Sirohi and Jawar Singh; Indian Institute
of Technology Patna, India
03:00 PM [5E-4]
Performance improvement of trap charge infused MoS2
based TFET photosensor by dielectric engineering
Jagritee Talukdar and Bhaskaran Muralidharan;
Indian Institute of Technology Bombay, India

Session 5F : Integrated Photonics I

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 3, Session Chair : Gauri Karve; IMEC Belgium
02:00 PM [5F-1] [Invited]
Perspectives on active optical component integration for next
generation integrated photonics
Sandeep Saseendran; IMEC, Belgium
02:25 PM [5F-2] [Invited]
Graphene on silicon carbide as a mid-IR metamaterial
Francesca Iacopi; University of Technology Sydney, Australia
02:50 PM [5F-3]
On-Chip THz Silicon Topological Photonics for 6G to XG
Wireless
Ranjan Singh, Nanyang Technological University, Singapore
03:15 PM [5F-4]
Bistable Photon Pair Generation in Silicon Microring
Resonator Integrated with Pump Rejection Filter
Arnab Goswami, Ram Mohan Rao Boyapati and Bijoy
Krishna Das; Indian Institute of Technology Madras, India

Session 5G. Ga2O3 based Power Devices

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 5, Session Chair : Jaya Jha;
Indian Institute of Technology Varanasi, India
02:00 PM [5G-1] [Invited]
Device Engineering for Ultra-Wide Bandgap Gallium Oxide
and III-Nitride Electronics
Siddharth Rajan; Ohio State University, USA
02:25 PM [5G-2] [Invited]
Development of vertical Ga2O3 power devices and their
processing technologies
Masataka Higashiwaki; Osaka Metropolitan University /
National Institute of Information and Communication
Technology, Japan

02:50 PM [5G-3]
High-k dielectric integration to improve breakdown
characteristics of β-Ga2O3 Schottky diode
Pooja Sharma, Yeshwanth Parasubotu and Saurabh Lodha;
Indian Institute of Technology Bombay, India

IEEE Electron Devices Technology and 44

Manufacturing Conference 2024
03:05 PM [5G-4]
Exploring Phase and Bandgap Variations in Gallium Oxide
Using Mist-based Chemical Vapor Deposition System
Shiv Kumar1, Arnab Mondal2, Anand Pandey1, Subhashis
Das2 and Ankush Bag1; 1Indian Institute of Technology
Guwahati, India; 2Indian Institute of Technology Mandi, India
03:20 PM [5G-5]
LPCVD Grown n-Ga2O3 on p-GaN and Demonstration of
p-n Heterojunction Behavior
Arnab Mondal1, Arpit Nandi2, Manoj Yadav3 and Ankush
Bag4; 1Indian Institute of Technology Mandi, India;
2
University of Bristol, United Kingdom; 3TU Wein, Austri;
4
Indian Institute of Technology Guwahati, India

Session 5H : SOI Devices for RF Applications

Tuesday, March 5, 02:00 PM – 03:30 PM
Session Room : Audi 4, Session Chair : Venkata Vanukuru;
GlobalFoundries, India
02:00 PM [5H-1] [Keynote]
RF SOI Technology Advances for 5G Front End Modules
Alfred Chong; GlobalFoundries, Singapore
02:30 PM [5H-2]
Experimental Study on 22 nm FD-SOI CMOS Devices for
MM-Wave Switch Applications
Kishore Bantupalli, Santosh Kumar Gedela and Venkata
Vanukuru; GlobalFoundries, India
02:45 PM [5H-3]
Experimental Studies of Extended Drain MOSFET in 130-nm
SOI Technology for Power Amplifier Design
Binoy Kumar Paul1, Santosh Kumar Gedela1, Rui Tze Toh2
and Venkata Narayana Rao Vanukuru1; 1GlobalFoundries,
India; 2GlobalFoundries, Singapore
03:00 PM [5H-4]
SSROI (super-steep retrograde on insulator) substrates for
RF switch and LNA device performance enhancement
Hideki Takeuchi; Atomera Inc., USA
03:15 PM [5H-5]
Validation of Dynamically Depleted Symmetric BSIM-SOI
Compact model for RF SOI T/R Switch Applications
Debashish Nandi1, Chetan Kumar Dabhi2, Dinesh
Rajasekaran2, Naveen Karumuri3, Sreenidhi Turuvekere3,
Balaji Swaminathan3, Srikanth Srihari3, Anupam Dutta3,
Chenming Hu2 and Yogesh Singh Chauhan1; 1Indian
Institute of Technology Kanpur, India; 2Berkeley Device
Modelling Center, University of California, Berkeley, CA,
USA; 3GlobalFoundries Inc., Bangalore, KA, India

IEEE Electron Devices Technology and 45

Manufacturing Conference 2024
 Session 6A : Ferroelectric Materials
and Devices II
Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 1, Session Chair : Saptarshi Das;
Pennsylvania State University, USA
03:45 PM [6A-1] [Invited]
Wake up free robust ferroelectricity in solution-processed
La:HfO2 thick films
Pavan Nukala; Indian Institute of Science Bangalore, India
04:10 PM [6A-2]
Multi-Level, Low-Voltage Programming of Ferroelectric
HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-
Line
Ruben Hamming-Green1,2, Saketh Ram Mamidala1, Donato
Francesco Falcone1, Beatriz Noheda2, Bert Jan Offrein1,
Laura Bégon-Lours1,3; 1IBM Research Europe, Zurich,
Switzerland; 2University of Groningen, Netherlands;
3
ETH Zürich, Switzerland
04:25PM [6A-3]
Recorded Ferroelectric Polarization Switching of
Hf0.5Zr0.5O2 Capacitors Achieved by Thermal Rewake-up
Operations
Zichong Zhang, Yifan Yang, Rui Su, Tonghui Lin, Xiangshui
Miao, Xingsheng Wang; Huazhong University of Science
and Technology, China
04:40 PM [6A-4]
A Novel Hafnia-based Ferroelectric Capacitor with
Antiferroelectric Zirconia Seed Layer for High Ferroelectricity
and Endurance
Mengxuan Yang, Kaifeng Wang, Bocheng Yu, Zhiyuan Fu,
Chang Su, Ru Huang and Qianqian Huang; Peking
University, China
04:55 PM [6A-5]
A novel hybrid-FE-layer FeFET with enhanced linearity for
on-chip training of CIM accelerator
Yuejia Zhou, Ru Huang, Kechao Tang; Peking University,
China

Session 6B : Unconventional Computing I

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 9, Session Chair : Veeresh Deshpande;
Indian Institute of Technology Bombay
03:45 PM [6B-1] [Keynote]
Atomic Lego for future computing
Feng Miao; Nanjing University, China
04:15 PM [6B-2] [Invited]
Scalable control and readout system for superconducting
qubit devices
Vibhor Singh; Indian Institute of Science Bangalore, India

IEEE Electron Devices Technology and 46

Manufacturing Conference 2024
04:40 PM [6B-3]
Probabilistic Autonomous Data Acquisition Using Stochastic
MTJ Based p-Bits
Saleh Bunaiyan, Feras Al-Dirini; KFUPM, Saudi Arabia
05:00 PM [6B-4]
Performance Comparison for Quantum Approximate
Optimization Algorithm (QAOA) across Noiseless Simulation,
Experimentally Benchmarked Noisy Simulation, and
Experimental Hardware Platforms
Sanyam Singhal1, Vandit Srivastava2, Rohith P2, Prateek
Jain3, Debanjan Bhowmik1; 1Indian Institute of Technology
Bombay, India; 2Indian Institute of Technology Bombay,
India; 3Fractal Analytics, India

Session 6C : Design Technology

Co-Optimization II
Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 2, Session Chair : Soumya Pandit;
Calcutta University, India
03:45 PM [6C-1] [Invited]
Disrupting Conventional Chip Design through the Open
Source EDA Ecosystem
Mehdi Saligane; University of Michigan, USA
04:15 PM [6C-2] [Invited]
SPICE Modeling of distance-dependent mismatch for
competitive ADC/DAC design
Gert-jan Smit; NXP Semiconductors, The Netherlands
04:45 PM [6C-3] [Invited]
Enhancing design robustness accounting for process
variations of multi-transistor designs
Ajoy Mandal; Texas Instruments, India

Session 6D : Optoelectronic Devices

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room: Audi 6+7, Session Chair : Rino Choi;
Inha University, South Korea
03:45 PM [6D-1] [Keynote]
Emerging Semiconductor Nanostructures for Low Power
Photonic and Piezotronic Devices
Samit Kumar Ray; Indian Institute of Technology Kharagpur,
India
04:15 PM [6D-2] [Invited]
Utilizing Geometry and Topology for Designing On-Chip
Chiral Photonic Infrastructure
Ritesh Agarwal; University of Pennsylvania, USA
04:40 PM [6D-3]
Visible-SWIR Sensitive Artificial Retina for Vision Sensors
Manoj Kumar, Kritika Bhattacharya and Samaresh Das;
Indian Institute of Technology Delhi, India

IEEE Electron Devices Technology and 47

Manufacturing Conference 2024
05:00 PM [6D-4]
Scattering and Absorption Efficiency Analysis of Gold
Nanospheres for Optoelectronic Applications
Chandan Upadhyay, Kamalesh Tripathy and Mitradip
Bhattacharjee; Indian Institute of Science Education and
Research Bhopal, Bhopal, India

Session 6E : Sensors and Biosensors II

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 8, Session Chair : V V Raghavendra Sai;
Indian Institute of Technology Madras, India
03:45 PM [6E-1] [Keynote]
Conformal sensors for wearables and nearables
Madhu Bhaskaran; RMIT University, Australia
04:15 PM [6E-2] [Keynote]
Micro Technologies for Healthcare
Ajay Agarwal; Indian Institute of Technology Jodhpur, India
04:45 PM [6E-3]
Dual-k Reconfigurable Silicon Nanowire Schottky Barrier
Transistor for Biosensing Application
Anil Kumar, Sumit Kale; Delhi Technological University,
New Delhi, India
05:00 PM [6E-4]
Leveraging Photo-patternable Nanocomposites for High
Performance Tactile Neuromorphic Sensing
Nadeem Tariq Beigh, Faizan Tariq Beigh and Dhiman
Mallick; Indian Institute of Technology Delhi, India

Session 6F : Integrated Photonics II

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 3, Session Chair : Samit Kumar Ray;
Indian Institute of Technology Kharagpur, India
03:45 PM [6F-1]
Design and Demonstration of Ring Assisted Mach Zehnder
Interferometer Modulator in Fully-Monolithic 45 nm SOI GF
Fotonix™ Platform
Riddhi Nandi, Pratyasha Priyadarshini and Rupa Gopinath;
GlobalFoundries, India
04:00 PM [6F-2]
Comparison of Electro-Optical Characteristics of Simulated
and Fabricated InGaN/GaN MQWs Green Light Emitting
Diodes on c-Plane Sapphire
Indrani Mazumder, Kashish Sapra, Harshita Aagiwal, Ashok
Chauhan, Manish Mathew, Priyavarat Prajapati, Bhoopendra
Kumar Kushwaha, Arvind Kumar Singh, Ramakant Sharma,
Bhawani Shankar, Prateek Kothari and Kuldip Singh;
AcCSIR, India, CSIR-CEERI, Pilani, India
04:15 PM [6F-3]
Study of Stress Compensation Layer for Enhancing Quantum
Efficiency of InGaN/GaN-MQWs LEDs Within the
Green-Gap Region
Chandra Prakash Singh and Kankat Ghosh; Indian
of Technology Jammu, India

IEEE Electron Devices Technology and 48

Manufacturing Conference 2024
04:30 PM [6F-4]
Deep-UV Nanowire LED with Step-Graded n-Type Electron
Blocking Layer and Al2O3 Nanoparticles for Enhanced
Performance
Samadrita Das, Trupti Ranjan Lenka and Fazal Ahmed
Talukdar; National Institute of Technology Silchar
04:45 PM [6F-5]
Design & Characterization of Front End Electronics for
Silicon Photomultiplier for imaging of hard X-rays using
NaI (Tl) Scintillator
Shiv Kumar Goyal1,2, Amisha P. Naik1, Abhay Kumar2
and Santosh Vadawale2; 1Nirma
University, India; 2Physical Research Laboratory,
Ahmedabad, India

Session 6G : Solar Cells

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 5, Session Chair : Arun Kumar Singh;
Punjab Engineering College, Chandigarh, India
03:45 PM [6G-1] [Invited]
Opportunities to make solar cells “greener” with organic
photovoltaic devices
S. Sundar Kumar Iyer, Indian Institute of Technology Kanpur,
India
04:15 PM [6G-2]
Spatial Mapping of Inverted Metamorphic Triple Junction
Solar Cells
Vaishnavi Thakur, Bernice Mae Yu Jeco Espaldon and
Yoshitaka Okada, The University of Tokyo, Japan
04:30 PM [6G-3]
A comparative study of two-step and three-step annealing
processes for PVDF added FASnI3 film quality and solar
cell
Basavaraju U1,2, Yash Bajpai1, Naga Hanumaiah2 and
Praveen C Ramamurthy1; 1Indian Institute of Science
Bangalore, India; 2Central Manufacturing Technology
Institute, India
04:45 PM [6G-4]
Tin-Based Quasi-2D Halide Perovskite Solar Cells with
Alternating Cation in the Interlayer Space
Kelvin Nosakhare Eguavoen and Praveen C Ramamurthy;
Indian Institute of Science Bangalore, India

Session 6H : GaN HEMTs for RF Applications

Tuesday, March 5, 03:45 PM – 05:15 PM
Session Room : Audi 4, Session Chair : Patrick Fay;
University of Notre Dame, Notre Dame, USA
03:45 PM [6H-1] [Keynote]
A Compact Model for Trigate GaN based FinHEMTs
Amitava DasGupta; Indian Institute of Technology Madras,
India

IEEE Electron Devices Technology and 49

Manufacturing Conference 2024
04:15 PM [6H-2] [Invited]
Advancements in GaN Modeling for Power and RF
Applications: Insights from the ASM Model and Beyond
Sheikh Aamir Ahsan; National Institute of Technology
Srinagar, India
04:35 PM [6H-3]
Fermi-Level Pinning Effect in Gate Region: A Case Study of
Multi-Metal Gated AlGaN/GaN HEMT for High RF Linearity
Toiyob Hossain1, Bejoy Sikder1, Md. Tasnim Azad1,
Qingyun Xie2, Mengyang Yuan2, Eiji Yagyu3, Koon Hoo
Teo4, Tomás Palacios4 and Nadim Chowdhury1
; 1Bangladesh University of Engineering and Technology,
Dhaka, Bangladesh; 2Massachusetts Institute of Technology,
United States; 3Mitsubishi Electric Corporation, Japan;
4
Mitsubishi Electric Research Laboratories, United States
04:50 PM [6H-4]
Inspection of Trapping and Detrapping Dynamics in Fe- and
C-doped GaN-based RF HEMTs by Filling Pulse-Dependent
DCT Spectroscopy
P. Vigneshwara Raja1, Vaidehi Vijay Painter1, Raphael
Sommet2 and Jean-Christophe Nallatamby2; 1Indian Institute
of Technology Dharwad, India; 2XLIM Laboratory CNRS
UMR 7252, France
05:05 PM [6H-5]
A GaN Low Noise Amplifier Design Using Numerical
Optimization
Neha Bajpai and Yogesh Singh Chauhan; Indian Institute
of Technology Kanpur, India

Evening Panel Discussion 2

Tuesday, March 5, 06:00 PM – 07:00 PM
Session Room : Audi 1
Moderator : Saptarshi Das; Pennsylvania State University, USA
Is Quantum the new Nano?
Panelists : Manish Chhowala (University of Cambridge, UK),
Ritesh Agarwal (University of Pennsylvania, USA),
Hitoshi Wakabayashi (Tokyo Institute of Technology, Japan),
Samit Ray (Indian Institute of Technology Kharagpur, India)

IEEE Electron Devices Technology and 50

Manufacturing Conference 2024
 Poster Session (P2)

Track – Device and Circuit Reliability (DCR)

Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-1] Influence of Localized Hot Carrier Degradation in DSOI Device
Operating in MOSFET and BJT Modes
Influence of Localized Hot Carrier Degradation in DSOI Device Operating
in MOSFET and BJT Modes
[P2-2] Investigation of Robust Reliability Performance for 1.2kV 4H-SiC
Trench MOSFET with deep P structure
Jake Choi, Kwangwon Lee and Howard Kim
[P2-3] A Novel approach to design secure and reliable SRAM from power
analysis attack using power equalizer circuit
Priyanka Sharma, Aastha Gupta, Ashish Panchal and Vaibhav Neema
[P2-4] Probe and Photopotential-Induced Anomalous Degradation Routes
in Perovskite Solar Cells
Apoorva Singh, Yash Bajpai and Praveen C Ramamurthy
[P2-5] Magnetic Stray Field Induced Variability of the Switching
Characteristics of Spin-Transfer Torque Magnetic RAMs
Ramit Dutta, Shafin Bin Hamid and Md. Zunaid Baten
[P2-6] A Comprehensive SPICE Modeling Methodology for Hot-carrier
Degradation
Udit Monga, Usha Gogineni, Ines Hetzel, Chong Jin and Alexander
Steinmair
[P2-7] Aging Analysis of CMOS Based Synaptic Circuits
Krishna Negi, Jani Babu Shaik, Sonal Singhal, Nilesh Goel and Siona
Menezes
[P2-8] NBTI Resilient Dual Mode Noise Immune Inverting Schmitt Trigger
Circuit
Aryan Kannaujiya and Ambika Prasad Shah
[P2-9] Unveiling the Role of Interface and Dielectric Wall Traps with
Self-heating Induced Aging Prediction of Forksheet FET
Sunil Rathore, Sandeep Kumar, Mohd. Shakir, Navjeet Bagga and
Sudeb Dasgupta
[P2-10] Impact of Back End of Line (BEOL) and Ambient Temperature on
Self-Heating in Twin Nanowire Gate-All-Around FETs: Junctionless Mode
Versus Inversion Mode
Nitish Kumar, Karan Gupta, Ayush Gupta, Ankur Gupta and
Pushpapraj Singh
[P2-11] Self Heating Induced Reliability Issues and Revealing Early
Ageing in Thin PDSOI Transistor
Amit Kumar, Shashank Banchhor, Pradyum Pal, Narendra Pratap,
Shubham Chaurasia, Ashutosh Yadav, Sudeb Dasgupta, Anand
Bulusu and Nitanshu Chauhan

IEEE Electron Devices Technology and 51

Manufacturing Conference 2024
 Track – MEMS/NEMS and Heterogeneously
Integrated Devices (MEMS)
Tuesday, March 5, 06:00 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-12] Real time acoustic convolution of RF signals using organic
semiconductor
Paromita Bhattacharjee, Parameswar Krishnan Iyer and Harshal
Bhalchandra Nemade
[P2-13] Fabrication of Miniaturized Pressure Sensors for Invasive
Pressure Measurements
Linet Thomas C, Nithin B, Bhat K N, Nayak M M and Navakanta Bhat
[P2-14] A 3D-printed Cantilever Beam Within a Semi-enclosed Cylinder
Cavity For Differential Pressure Sensing
Xuecui Zou, Dhiya Belkadi, Min Sung Kim, Khaled Nabil Salama and
Muhammad Hussain
[P2-15] Electrothermal analysis of a simple MEMS Pirani Gauge with a
lower detection limit
Ashwini Kumari, Manu Garg, Piyush Kumar and Pushpapraj Singh
[P2-16] A Finite Element Study of SMR-based MEMS Magnetoelectric
Antennas for On-chip RF Energy Harvesting
Sazid Ali, Mujeeb Yousuf and Pushpapraj Singh
[P2-17] Design and simulation of metal-based MEM relay for universal
logic NAND gate operation
Khanjan Joshi, Manu Garg, Piyush Kumar and Pushpapraj Singh

Track – Modeling and Simulation (MS)

Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-18] DFT-NEGF transport in 2D channels with semimetal contacts: the
influence of doping and bilayers
DFT-NEGF transport in 2D channels with semimetal contacts: the influence
of doping and bilayers
[P2-19] Physics-Based Core Compact Model of 2D MoS2 FET
Considering Fermi-Dirac Statistics
Swapna Sarker, Ankur Garg, Prabhat Ranjan, Abhishek Kumar and
Avirup Dasgupta
[P2-20] A Compact Model-Based Threshold Voltage Distribution
Simulation of 3D Gate-All-Around (GAA) NAND Flash Memories
Jinil Yoo and Hyungcheol Shin
[P2-21] Single Event Transient Effects in Raised Source/Drain
Double-Gate1-T DRAM
Y. M. Aneesh, Bindu Boby and Asen Asenov
[P2-22] Comparison of crack resistance of two SiC MOSFETs gate
geometries under short-circuit by FE simulations
Florent Loche-Moinet, Loïc Theolier and Eric Woirgard
[P2-23] WKB model of ferroelectric tunnel junctions for memory
applications: voltage-dependent screening and electrostriction
effects
Deepali Jagga, Saurav De and Artur Useinov

IEEE Electron Devices Technology and 52

Manufacturing Conference 2024
[P2-24] A Compact Model for Program Operation of Gate-All-Around
Barrier-Engineered Charge-Trapping NAND Flash Memories
Haechan Choi and Hyungcheol Shin
[P2-25] An Interpretable Symbolic Regression Model for Prediction of
GaN Vertical Power MOSFET Failsafe Boundaries
Smriti Singh, Aasim Ashai, Ankita Mukherjee, Tanmoy Pramanik and
Biplab Sarkar
[P2-26] Improved Process Induced Threshold Voltage Variability in
Negative Capacitance Junctionless Transistors
Ruma S R, Prof. Vita-Pi Ho Hu and Dr. Manish Gupta
[P2-27] A Neuromorphic FTJ Model-Driven Design of Charge-Domain
Synaptic Circuits and Spiking Neural Networks
Xiaobao Zhu, Ning Feng, Hengyi Liu, Ning Ji, Lining Zhang, Runsheng
Wang and Ru Huang
[P2-28] Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate
Performance Parameters of 275 nm AlGaN-based UV-C LED
Balkrishna Choubey and Kankat Ghosh
[P2-29] Compact Modeling and Experimental Validation of Reverse
Mode Impact Ionization in LDMOS Transistors within the BSIM-BULK
Framework
Yawar Hayat Zarkob, Ayushi Sharma, Girish Pahwa, Debashish Nandi,
Chetan K. Dabhi, Volker Kubrak, Bob Peddenpohl, Mingchun Tang,
Chenming Hu and Yogesh Singh Chauhan
[P2-30] Isothermal Characterization and Thermal Resistance Extraction in
SiGe HBTs using Single Pulse Measurement
Sovan Barman, Suresh Balanethiram and Anjan Chakravorty
[P2-31] Scalable GaN-HEMT Model for X-band RF Applications
Praveen Pal, Raghvendra Dangi, Mohammad Sajid Nazir,
Purnima Kumari, Umakant Goyal, Sudhir Kumar, Poonam Singh,
Meena Mishra and Yogesh Singh Chauhan
[P2-32] Effects of Oxygen Vacancy on Ferroelectric Tunnel Junctions:
An Ab initio Study
Ning Ji, Ning Feng, Jiajun Qiu, Puyang Cai, Lining Zhang, Runsheng
Wang and Ru Huang
[P2-33] Physics-based Scalable Compact Model for Terminal Charge,
Intrinsic Capaci-tance and Drain Current in Nanosheet FETs
Aishwarya Singh, Mohit Ganeriwala and Nihar Mohapatra
[P2-34] Electrochemical modeling of electrochromic devices: An
equivalent circuit approach
Alankrith S J, Tanushree H Choudhury and Revathy Padmanabhan
[P2-35] Projection of Circuit Performance at Cryogenic Temperatures
including Self-Heating: A Device-Circuit Co-design Perspective
Mohit Shukla, Sovan Kumar Dey, Saravana Kumar Manivannan and
Avirup Dasgupta 47

[P2-36] FOSS CAD for the Compact Verilog-A Model Standardization

in Open Access PDKs
Wladek Grabinski
[P2-38] Impact of Independent Gate Bias on the channel electrostatics
of UTSOI Devices: An Atomistic Band structure approach
Yogesh Dhote, Nalin Vilochan Mishra, Pallavi Athe and Aditya
Sankar Medury

IEEE Electron Devices Technology and 53

Manufacturing Conference 2024
[P2-39] Enhancing Reliability and RF Performance: The Impact of Fe
doped Back Barrier Optimization in GaN HEMTs
S. Angen Franklin, Binola K Jebalin I.V, Subhash Chander and Nirmal D
[P2-40] Innovative ROM based approach to optimize reflow soldering
process parameters
Subodh Deodhar, Tejas Jeurkar and Tomomichi Nozaki
[P2-41] Neural Network augmented Physics based Hybrid Compact
Model for Computational Efficiency Improvement
Kumar Sheelvardhan, Srishti Parandiyal, M. Ehteshamuddin, Abhishek
Kumar, Sourajeet Roy and Avirup Dasgupta
[P2-42] Extended Huckel model-based DFT Performance Analysis of
GS-GNR FET
Anshul Narwal, Yash Pathak, Bhavya Kumar and Rishu Chaujar
[P2-43] A Generic Approach for Modeling and FPGA Emulation of RF
Power Amplifier
Arpita Dey, Abuzar Shakeel, Rahul Bhattacharya and Roy Vincent
[P2-44] Selection of Suitable Hole Transport Layer for Lead-free FASnI3
Inverted Perovskite Solar Cells
Anand Pandey, Shiv Kumar and Ankush Bag
[P2-45] Unravelling the Impact of Random Dopant Fluctuations on
Si-based 3nm NSFET: A NEGF Analysis
Ankit Dixit, Ali Rezaei, Tapas Datta, Nikolas Xeni, Naveen Kumar,
Ismail Topaloglu, Preslav Aleksandrov, Vihar Georgiev and Asen Asenov
[P2-46] Machine Learning Augmented TCAD Assessment of Corner Radii
in Nanosheet FET
Jyoti Patel, Bathula Satwik, Ishani Bais, Chirag Arora, Vivek Kumar,
Navjeet Bagga and Sudeb Dasgupta
[P2-47] Deep Learning Assisted Approach for Analog Circuit Design
Optimization
Anant Singhal, Priyanshi Goyal and Harshit Agarwal
[P2-48] Design and Performance Analysis of Inserted Oxide FinFET Using
the Process Simulation
Aditya Kumar, Anjali Goel and Brajesh Rawat

Track – Packaging and Heterogeneous

Integration (PHI)
Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-49] Significance of die shadow size and placement on solder joint
reliability performance
Bhaskar Rao Korpati, Prasad N V Nune, Koustav Sinha, Christopher
Glancey, Gokul Kumar, Yeow Chon Ong and Hong Wan Ng
[P2-50] Monolithic 3D Integration using BEOL FeFET: Reliability, Thermal
Effects, and DNN Accuracy
Shubham Kumar, Yogesh Singh Chauhan and Hussam Amrouch
[P2-51] A Robust and Low-cost Fiber-optic Array Attachment Solution for
Silicon Photonics Chips with Large Number of Input/output Channels
Ankan Gayen, Nagarajan Nallusamy, Goutham Ezhilarasu, Shamsul
Hassan, Vinoth Subramanian, Kumar Piyush, Arnab Goswami and Bijoy
Krishna Das

IEEE Electron Devices Technology and 54

Manufacturing Conference 2024
[P2-52] Transient Thermal Modeling of a Multi-core CPU under Constant
Load using R- equivalent model
Amit Kumar, Sudipa Mandal, Aritra Hazra, Pallab Dasgupta and
Anandaroop Bhattacharya

Track – Process, Technology, Yield and

Manufacturing (PTYM)
Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-53] Optimization of Tungsten Plug Thin Film Process to Improve the Fill
Seam and Contact Resistance in 180nm CMOS Technology
Ashish Kumar Chauhan, Vedula Surya Teja, Priya Chawla, Anuvesh
Kumar Sharma, Rajat Attri, Monika Gupta, Manoj Kumar Singh and
Manoj Kumar Wadhwa
[P2-54] Feedback-based Selective Attenuated Phase Shift Mask for
Improved Resist Profile Generation in Optical Lithography
Tanmay Joshi, Subhradip Chakraborty, Sumit Ambuskar, Kamal Rudra
and Abhishek Kumar Singh
[P2-55] Controlling defects by substituting ceramic gas distribution plate
in process chamber of plasma etcher
Zaheer Ahmed Khan, Girish Dinkar Ingle, Anuvesh Kumar and Vijay
Prakash Singh

Track – Photonics, Optoelectronics,

Imaging and Display (POID)
Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-56] Absorption Coefficient, Mobility and Carrier Lifetime Calculations
of P-I-P Quantum Dot Infrared Photodetectors
Dr. Suryansh Dongre, P. N. V. Anil Kumar, Shubham Patil, Rutuj
Gharate and R. P. Singh
[P2-57] The Solar Quest: Navigating Lead-Tin Perovskite for Enhanced
Solar Energy Absorption
Shubhangi Bhardwaj, Abhyuday Verma and Sushobhan Avasthi
[P2-58] All Dielectric Metasurface Display with Ultrahigh Color
Saturation
Jeevan Rois, Aravind Yelashetty and Tapajyoti Das Gupta
[P2-59] Multilayer Graphene-Silicon Energy-efficient Photodetectors
Srikrishna Chanakya Bodepudi, Abid Anwar Muhammad, Malik
Muhammad, Huan Hu and Yang Xu
[P2-60] Impact of Sb Variation and Electric Field on InAs/Ga(As)Sb
Superlattice Structures
Megha Yadav, Akshat Barnwal, Naga Sheshu Reddy, Priyesh Kumar
and Jhuma Saha
[P2-61] Smartphone Camera and Geometry Setting in Colorimetric
Measurement for analyte detection
Sunita Bhatt, Vijay Prabhakar, Richa Gupta and Satish Kumar Dubey

IEEE Electron Devices Technology and 55

Manufacturing Conference 2024
[P2-62] Adaptive Design of Tensile Strained Ge-on-InGaAs QW Laser for
MIR Applications
Rebecca Rainhart, Purv Bavishi, Ben Westcott, Zibing He, Rutwik Joshi
and Mantu Hudait

[P2-63] Device Simulation of Hybrid Structure TiO2/CH3NH3SnI3/RGO

based Solar Cell using SCAPS -1D
T Keerthi Priya, Prasenjit Deb and Anwesha Choudhury
[P2-64] Comparative Study on Pentacene & Cupc as HTLs for high-
performance OLEDs
Yash Bajpai and Praveen C Ramamurthy
[P2-65] Design of 4x4 Thermo Optic Silicon Photonics Switch for
communication applications in O-band on GF Fotonix™ Platform
Riddhi Nandi, Rupa Gopinath, Avijit Chatterjee, Pratyasha Priyadarshini,
Abdelsalam Aboketaf, Crystal Hedges, Arunima Dasgupta and
Michal Rakowski
[P2-66] Unveiling Optoelectronic Traits in Chalcogenide Thin-Film
Photovoltaics
Mayank Dubey, Chandrabhan Patel, Kumari Jyoti, Saurabh Yadav,
Sumit Chaudhary and Shaibal Mukherjee

Track – Sensors, Flexible and

Bioelectronics (SFBE)
Tuesday, March 5, 05:45 PM – 07:30 PM
Session Room : Audi 2 + Audi 3
[P2-67] Electrochemical detection of lead using Silane modified MOF
Jinu Joji, Sunil Kumar Naik and Praveen C Ramamurthy
[P2-68] Cysteine functionalized naphthalene diimide unit for mercury ion
sensing
Vishakha Chauhan, Aman Thakur, Praveen C Ramamurthy and Prosenjit
Ghosh
[P2-69] Fluorescence-based sensor for detection of Al 3+ metal ions
Aman Thakur, Vishakha Chauhan and Praveen Ramamurthy
[P2-70] TCAD Investigation of HEMT Based Hydrogen Sensors for
Extreme Environment Applications
Renuka Kumaran, Rahul J, Arathy Varghese and Lintu Rajan
[P2-71] Microcrystalline cellulose (MCC) reinforced epoxy composites
for electronic application
Sachin Revgade, Jinu Joji, Jithunlal S, Chandana Gadadasu, Yash Bajpai,
Digvijay Singh Choudhary, Varun Adiga and Praveen Ramamurthy
[P2-72] Mechanically Robust Cellulose Film for Electronics Applications
Jithunlal S, Jinu Joji, Swati Arendra and Praveen C Ramamurthy
[P2-73] Printed and chipless humidity sensor using NFC inspired
technology
Sonia Gomez-Gijon, Victor Toral, Diego P. Morales and Almudena
Rivadeneyra
[P2-74] Exploration of Organic Transistors for Circuit and Light Sensing
Applications
Sachin Rahi, Gargi Konwar and Shree Prakash Tiwari

IEEE Electron Devices Technology and 56

Manufacturing Conference 2024
[P2-75] Surface-Engineered Methylammonium Lead Bromide Single
Crystals: A Platform for Lifetime-Encoded/Photodetector Double Security
Tags
Somnath Mahato
[P2-76] Non-enzymatic Glucose Detection using ZnO-MoS2
30
Nanocomposite Heterostructure
Poushali Nandi, Debasish Panda, Sarvar Singh and Ajay Agarwal
[P2-77] Ultra-Thin Finger like source Region Based TFET: Temperature
Sensor
Prabhat Singh, Ashish Raman, Dharmendra Singh Yadav, Naveen
Kumar, Ankit Dixit and Md Hasan Raza Ansari
[P2-78] Utilization of 2-Methylimidazole Cobalt salt for the
electrochemical sensing of atrazine pesticide
Simranjeet Singh, Pavithra N, Radhika Varshney, Basavaraju Uppara
and Praveen Ramamurthy
[P2-79] Aging Effect on APCVD-grown 2D MoS2 Monolayer in NO2
Gas Sensing
Chandrabhan Patel, Saurabh Yadav, Vikash Verma, Kumari Jyoti,
Mayank Dubey, Ajit Yadav and Shaibal Mukherjee
[P2-80] Highly Sensitive Hydrogen Gas Sensor with Silicon Nanowire
FETs
Afsana Anjum Akhi, Nazmul Hasan Naime and Mainul Hossain
[P2-81] Detection of explosives in trace quantities employing silver
nanoparticles decorated silica sol gel as surface enhanced Raman
spectroscopy (SERS)-active sensor
Sibashish Chakraborty, Richa Goel and Satish Dubey
[P2-82] Sensitivity and Reliability Assessment of a Strained Silicon
Junctionless FinFET-based Hydrogen Gas Sensor
Navneet Gandhi, Sunil Rathore, Rajeewa Kumar Jaisawal,
P N Kondekar, Naveen Kumar, Ankit Dixit, Vihar Georgiev and
Navjeet Bagga
[P2-83] Influence of Nitrogen Inclusion on the Performance Parameters
of Zinc Oxynitride Thin Film Transistors
Anjana J G, Kiran Jose, Priyanka K M, Aswathi R Nair and Venu Anand

IEEE Electron Devices Technology and 57

Manufacturing Conference 2024
 Planning Your Wednesday

Plenary Talk
Wednesday, March 6, 09:30 AM – 10:20 AM
Session Room : Audi 1 + 2 + 3, Session Chair: Bin Zhao, IEEE EDS
09:00 AM Plenary 5
Transistor Scaling for the Future
Anand Murthy; Intel, USA
09:50 AM Plenary 6
Simulation and Analytics in the Angstrom Era
Srinivas Raghvendra; Synopsys, USA

Oral Sessions

Session 7A : Design Technology

Co-Optimization III
Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 1, Session Chair : Hussam Amrouch;
Technical University Munich, Germany
11:00 AM [7A-1] [Keynote]
Efficient and Accurate DTCO Framework for Reliability
and Variability-Aware Explorations of FinFETs, Nanosheets,
and Beyond
Markus Karner; Global TCAD Solutions, Austria
11:30 AM [7A-2] [Invited]
Perspectives on Backside Power (PowerVia)
Manjunath Shamanna; Intel, USA
12:00 PM [7A-3]
DTCO of Nanosheet and Forksheet Architectures: Exploring
Dielectric Walls, Contacting Schemes, and Active Regions for
Optimized RO Performance
Gautam Gaddemane1, Pieter Schuddinck1, Krishna
Bhuwalka2, Gerhard Rzepa3, Gioele Mirabelli1, Philippe
Matagne1, Dmitry Yakimets2, Hao Wu2, Geert Hellings1
and Changze Liu1; 1IMEC, Belgium; 2Huawei, Belgium;
3
GTS, Austria
12:15 PM [7A-4]
Scaling Options for GAA Nanosheet Based Devices: Role of
Decoupling Inner- and Outer-Gate Lengths
Krishna Bhuwalka1, Oskar Baumgartner2, Hao Wu1,
Gerhard Rzepa2, Dmitry Yakimets1, Markus Karner2 and
Changze Liu1; 1Huawei, Belgium; 2GTS, Austria

IEEE Electron Devices Technology and 58

Manufacturing Conference 2024
 Session 7B : In-Memory Computing II
Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 9, Session Chair : Nicole Saulnier;
IBM Research, USA
11:00 AM [7B-1] [Keynote]
Frontiers in AI Hardware: Deploying In-Memory Computing
for Next-Gen Edge-AI Solutions
Nithin Chawla; ST Microelectronics, USA
11:30 AM [7B-2] [Invited]
Enhance Chip Connectivity and Functionality through
RRAM-based Monolithic 3D Integration for Energy-Efficient
Computing-In-Memory
Jianshi Tang; Tsinghua University, China
12:00 PM [7B-3] [Invited]
In-memory Computing: Across Times and Scales
Arindam Basu; City University of Hong Kong, Hong Kong
12:30 PM [7B-4]
Compensation of Conductance Mismatch with Redundant
Bit-lines for RRAM-based Voltage Sensing Mode
Computing-in-Memory
Yi Gao, Zongwei Wang, Zhizhen Yu, Lin Bao, Yimao Cai
and Ru Huang; Peking University, China
12:45 PM [7B-5]
Accelerated Bit Slicing Technique for In-Memory Computing
Using Multi-Input Resistive Random Access Memory
Jayatika Sakhuja1, Radhika Joglekar2, Sandip Lashkare2
and Udayan Ganguly1; 1Indian Institute of Technology
Bombay, India; 2Indian Institute of Technology Gandhinagar,
India

Session 7C : ML based Device Modeling

Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 2, Session Chair : Oves Badami;
Indian Institute of Technology Hyderabad, India
11:00 AM [7C-1] [Invited]
Parametric Modeling Paradigms of Emergent Graphene-
based Nano interconnects using Knowledge Based Machine
Learning
Sourajeet Roy; Indian Institute of Technology Roorkee, India

11:30 AM [7C-2]
Training Free Parameter Extraction for Compact Device
Models using Sequential Bayesian Optimization
Om Maheshwari, Aishwarya Singh and Nihar Ranjan
Mohapatra; Indian Institute of Technology Gandhinagar,
India
11:45 AM [7C-3]
A Neural Network based Fast Parameter Extraction of
Compact Hot Carrier Degradation Model in FinFETs
Cong Shen1, Yu Li1, Wu Dai1, Xinyue Zhang1, Zirui Wang1,
Zhigang Ji2, Lining Zhang1, Runsheng Wang1 and Ru
Huang1; 1Peking university, China; 2Shanghai Jiao
Tong University

IEEE Electron Devices Technology and 59

Manufacturing Conference 2024
12:00 PM [7C-4]
Neural Network Assisted Si-on-Nothing MOSFET Current-
Voltage Modeling with Incremental Learning
Shuhan Wang, Zheng Zhou, Guihai Yu, Zili Tang,
Jinghan Xu, Xiaoyan Liu and Xing Zhang; Peking university,
China
12:15 PM [7C-5]
Accurate and fast electrostatic simulations of a double gate
FETs using deep neural network
Avanish Kumar Singh1, Aasim Ashai2, Peram Sree Keerthan
Reddy1, Satya Aditi Dhaaipule1, Biplab Sarkar2 and Oves
Badami1; 1Indian Institute of Technology Hyderabad, India;
2
Indian Institute of Technology Roorkee, India
12:30 PM [7C-6]
Physics Informed Neural Network Based Time-Independent
Schrodinger Equation Solver
Anant Singhal and Harshit Agarwal; Indian Institute of
Technology Jodhpur, India
12:45 PM [7C-7]
Enhanced ANN for Accurate Current Prediction and Circuit
Simulation in Nanosheet FETs
Om Maheshwari and Nihar Mohapatra; Indian Institute of
Technology Gandhinagar, India

Session 7D : RRAM and OTS Selected

Crossbar Arrays
Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 8, Session Chair : Sandip Lashkare;
Indian Institute of Technology Gandhinagar, India
11:00 AM [7D-1] [Invited]
ReRAM: NVM for a New Generation
Amir Regev; Weebit Nano Ltd., Israel
11:30 AM [7D-2] [Invited]
Material Engineering for High Performance Memristive
Devices
Vikas Rana; Forschungszentrum Juelich, Germany
12:00 PM [7D-3]
Cycles Dependent Resistive Switching of Au/ZnO/ITO-
Coated PET Flexible Resistive Memory Devices
Sameen Azhar, Saikat Biswas, Argha Deep Paul and Rajat
Mahapatra; National Institute of Technology Durgapur, India
12:15 PM [7D-4]
Ultra-High Endurance (>1012) and High Drive-Current
Selector in Sub-30nmΦ Cell using Stable Oxide Doped with
As-Se Free High Melting-Point Compound
Yosuke Matsushima, Takeshi Iwasaki, Tadaomi Daibou,
Takayuki Sasaki, Yutaro Shimoda, Zhu Qi, Masakazu Goto,
Yuya Sato, Makoto Onizaki, Makoto Nagamine, Minoru
Amano, Hiroki Kawai, Hiroki Tokuhira, Kenta Chokawa,
Rina Takashima, Takayuki Tsukagoshi, Masumi Saitoh, Keiji
Ikeda and Katsuyoshi Komatsu; Institute of Memory
Technology Research & Development, Kioxia Corporation
Japan

IEEE Electron Devices Technology and 60

Manufacturing Conference 2024
12:30 PM [7D-5]
Probing Dit and Memory Window of Solution Processed
Oxide
Atul Sachan and Sandip Mondal; Indian Institute of
Technology Bombay, India

Session 7E : 2D Materials and Devices III

Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 6+7, Session Chair : Kelvin Fong;
NUS, Singapore
11:00 AM [7E-1] [Invited]
Vacancy-assisted contact resistance engineering in
monolayer and bilayer graphene devices
Jeevesh Kumar; Indian Institute of Technology (ISM)
Dhanbad, India
11:25 AM [7E-2] [Invited]
Designer 2D materials and machine-learning assisted
characterization
Shengxi Huang; Rice University, USA
11:50 AM [7E-3] [Invited]
High-Speed Electrical Transient Thermometry of Monolayer
MoS2
Emanuel Ber and Eilam Yalon; Technion – Israel Institute
of Technology, Israel
12:05 PM [7E-4] [Invited]
Sliding van der Waals Polytypes
Moshe Ben Shalom; Tel Aviv University, Israel
12:30 PM [7E-5]
Improved Resistive Switching and Synaptic characteristics on
2-D Graphene/MoS2/Graphene Memristor using O2 Plasma
Irradiation
Kanupriya Varshney1, Prajjwal Shukla1, Bhanu Prakash2,
Devarshi Mrinal Das1 and Brajesh Rawat1;
1
Indian Institute of Technology Ropar, India;2INST,Mohali, India
12:45 PM [7E-6]
Probing the Origin of Photocurrent in 2D Bilayer MoSe2-WSe2
Lateral Heterostructure
Purbasha Ray1, Rupali Verma2, Biswajeet Nyak1, Suman
Kumar Chakraborty1, Mayank Shrivastava2, Prasana Kumar
Sahoo1; 1Indian Institute of Technology Kharagpur, India;
2
Indian Institute of Science, Bengaluru, India

Session 7F : Process and Metrology

Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 4, Session Chair : Shawn Thomas;
Applied Materials, USA
11:00 AM [7F-1] [Invited]
e-beam technology innovation for EUV, Gate all around logic
and Advance Memory acceleration
Nitin Singh Malik; Applied Materials, USA

IEEE Electron Devices Technology and 61

Manufacturing Conference 2024
11:30 AM [7F-2]
Optical Probing of Charge Retention Time in Semiconductor/
Dielectric Structure
Binit Mallick, Dipankar Saha, Anindya Datta and Swaroop
Ganguly; Indian Institute of Technology Bombay, India
11:45 AM [7F-3] [Invited]
Atomic Layer Deposition from a Chemistry View
Xinwei Wang; Peking University, China
12:10 PM [7F-4]
Influence of ALD pulse times and deposition temperature on
electrical properties and reliability of MIM decoupling
capacitors based on Al-doped ZrO2 high-k dielectric in BEoL
conditions
Konstantinos Efstathios Falidas1, Kati Kühnel1, Maximilian
Everding1, Malte Czernohorsky1 and Johannes Heitmann2;
1
Fraunhofer Institute for Photonic Microsystems (IPMS),
Germany; 2TU Bergakademie Freiberg, Germany
12:25 PM [7F-5]
Roughness as an Important Metric for Si and SiGe Epi
Growth
Yogendra Yadav1, Piyush Bhatt1, Rajesh Sathiyanarayanan1
and Phillip Stout2; 1Applied Materials, India; 2Applied
Materials, United States
12:40 PM [7F-6]
Monitoring Product Chip Health with In-die Quality Monitors
Tomasz Brozek1, Alberto Piadena2, Michele Quarantelli2,
Larg Weiland1, Christopher Hess1, Sharad Saxena1, Yuan
Yu1, Rakesh Vallishayee1 and Andrzej Strojwas1; 1PDF
Solutions, USA; 2PDF Solutions, Italy

Session 7G : Package Design

Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 3, Session Chair : Deepak Arora;
Indian Institute of Technology Jodhpur, India
11:00 AM [7G-1] [Keynote]
Semiconductor Market Trends and Packaging Implications
Glenn G. Daves, NXP Semiconductors, USA
22
11:30 AM [7G-2] [Invited]
Packaging Heterogeneous Integration (PHI): Maintaining the
Scaling Golden Ratio
Arun Chandrasekhar, Intel, India
12:00 PM [7G-3]
Recurrent Neural Network (RNN) Based Signal Integrity
Assessment for Coaxial-Through Glass Vias in Three-
Dimensional Integration
Suyash Sachdeva, Madhu Kiran Kommukuri, Rajeevan
Chandel and Rohit Dhiman; National Institute of Technology
Hamirpur, India

IEEE Electron Devices Technology and 62

Manufacturing Conference 2024
12:15 PM [7G-4]
Leakage current based Thermal Design Approach for SSD
Reliability
Ramesh Nallavelli1, Prasad N V Nune1, Suresh Reddy
Yarragunta1, Christopher Glancey2, Gokul Kumar2, Yeow
Chon Ong3 and Hong Wan Ng3; 1Micron Technology,
India; 2Micron Technology, United States; 3Micron
Technology, Singapore

Session 7H : Printed Devices

Wednesday, March 6, 11:00 AM – 01:00 PM
Session Room : Audi 5, Session Chair : Chandan Yadav;
Indian Institute of Technology, Jammu, India
11:00 AM [7H-1] [Keynote]
In-Vitro Recording of Cellular Activities using Printed
Carbon-based Transistors
Adrica Kyndiah; Istituto Italiano di Tecnologia,Italy
11:30 AM [7H-2] [Invited]
Highly flexible and conformable electronic systems a new
generation of wearable devices
Piero Coseddu; University of Cagliari, Canada
12:00 PM [7H-3] [Invited]
Microfabrication of Prototypes of Millimeter-Band
Electromagnetic Components by Using DLP 3D Printing and
Magnetron Sputtering
Nikita M. Ryskin1,2, Ivan S. Ozhogin1,2, Andrei
V. Starodubov1,2, Alexey A. Serdobintsev2, Ilya O.
Kozhevnikov2, Igor Sh. Bahteev3, Sergey Yu. Molchanov1,3,
Vishant4, Anand Abhishek4, and Niraj Kumar4;
1
Saratov Branch, Kotelnikov Institute of Radio Engineering
and Electronics RAS, Russia; 2Saratov State University,
Russia; 3Osipyan Institute of Solid State Physics RAS,
Chernogolovka, Russia; 4CSIR-Central Electronics
Engineering Research Institute, India
12:15 PM [7H-4]
Investigation of resistive switching in ink-jet printed zinc
doped indium oxide-based devices
Manvendra Singh, Mohammed Hadhi Pp and Subho
Dasgupta; Indian Institute of Technology Bombay, India
12:30 PM [7H-5]
Exploration of Solution Processed OFETs with PVP/P3HT
interface for Synaptic Behavior Emulation
Somnath Bhattacharjee, Sachin Rahi, Gargi Konwar and
Shree Prakash Tiwari; Indian Institute of Technology Jodhpur,
India
12:45 PM [7H-6]
A System Level Integration of Wearable and Flexible
Magnetoelectric Nanogenerators for Efficient Energy
Harvesting
Nandan Murali, Dibyajyoti Mukherjee, Shashank Bhushan
Das, Dhiman Mallick and Soutik Betal; Indian Institute of
Technology Delhi, India

IEEE Electron Devices Technology and 63

Manufacturing Conference 2024
 Session 8A : GaN based Power Devices
Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 1, Session Chair : Jaya Jha;
Indian Institute of Technology (BHU) Varanasi, India
02:00 PM [8A-1] [Invited]
Indigenous GaN on SiC MMIC Technology for Strategic
Applications
Meena Mishra; Solid State Physics Laboratory, New Delhi,
India
02:25 PM [8A-2] [Invited]
Modeling of the gate leakage and forward gate reliability in
Schottky-gate p-GaN
Carlo De Santi; University of Milan, Italy
02:50 PM [8A-3] [Invited]
Efficient and Reliable Enhancement Mode AlGaN/GaN
HEMTs using novel P-type Oxide Engineering
Sayak Dutta Gupta; Indian Institute of Technology
Madras, India
03:15 PM [8A-4]
Investigation of DC Characteristics in GaN-on-Si power
MIS-HEMTs over a Wide Temperature Range (4 K to 550 K)
for Space and Quantum Computing Applications
Anant Johari1, Meng-Che Tsai1, Minh Thang Trinh Ngo1,
Yi Yang1, Tian-Li Wu1, Ankur Gupta2 and Rajendra Singh2;
1
International College of Semiconductor Technology,
National Yang Ming Chiao Tung University, Taiwan;
2
Indian Institute of Technology Delhi, India
03:30 PM [8A-5]
A Comprehensive analysis of Interlayer variabilities in
double-channel AlGaN/GaN HEMT heterostructure
Priyesh Kumar and Jhuma Saha; Indian Institute of
Technology Gandhinagar, India
03:45 PM [8A-6]
Improved thermal stability at high temperature of operation
(473K) in all epitaxy Nd2O3/AlGaN/GaN MOSHEMT
Umang Singh1, Hannah Genath2, Ritam Sarkar1, Jan
Kruegener2, H. Joerg Osten2 and Apurba Laha1; Indian
Institute of Technology Bombay, India; 2Leibniz University,
Germany

Session 8B : In-Memory Computing III

Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 5, Session Chair : Arindam Basu;
City University of Hong Kong, Hong Kong
02:00 PM [8B-1] [Invited]
Reimagining non-volatile memories for the Internet of
Intelligent Things
Xuanyao Fong; National University of Singapore, Singapore
02:25 PM [8B-2] [Invited]
Neuromorphic computing: Bridging the gap between
software and hardware
Sounak Dey; Tata Consultancy Services, India

IEEE Electron Devices Technology and 64

Manufacturing Conference 2024
02:50 PM [8B-3] [Invited]
Uncertainty Quantification at the Edge: Know when your
AI model doesn't know?
Priyesh Shukla; Samsung R&D Institute, India
03:15 PM [8B-4]
Indigenous back-end-of-line compatible SiO2-based One-
Time Programmable Memory for Secured Spiking Neural
Network Inference Accelerator
Shreyas Deshmukh, Anmol Biswas, Abhishek Kadam, Ajay
Singh, Veeresh Deshpande and Udayan Ganguly; Indian
Institute of Technology Bombay, India
03:30 PM [8B-5]
A Novel Small-Signal Ferroelectric Memcapacitor based
Capacitive Computing-In-Memory for Area- and
Energy-Efficient Quantized Neural Networks
Weikai Xu, Jin Luo, Boyi Fu, Zhiyuan Fu, Kaifeng Wang,
Chang Su, Qianqian Huang and Ru Huang; Peking
University, India
03:45 PM [8B-6]
CMOS-RRAM based In-Memory Hamming Distance
Calculation Technique
Manoj Kumar1, Ming-Hung Wu2, Tuo-Hung Hou2 and
Manan Suri1; 1Indian Institute of Technology Delhi, India;
2
National Yang Ming Chiao Tung University, Taiwan

Session 8C : Ferroelectric/Memory Modeling

Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 2, Session Chair : Avirup Dasgupta,
Indian Institute of Technology Roorkee, India
02:00 PM [8C-1] [Invited]
Stochastic Nonlinear Dynamical Modeling of SRAM Bitcells
in Retention Mode
Léopold Van Brandt; UCLouvain, Belgium
02:25 PM [8C-2]
Physical Modeling of Hafnia-based 3D Ferroelectric
Polarization Switching with Cylindrical Structure
Chang Su, Minyue Deng, Liang Chen, Kaifeng Wang,
Zhiyuan Fu, Shaodi Xu, Ru Huang and Qianqian Huang;
Peking University, China
02:40 PM [8C-3]
Modeling of Ferroelectric Thin Film Transistors with
Amorphous Oxide Semiconductor Channel
Wei Zhang, Jianze Wang, Chen Sun, Zhen Wu, Xiao Gong
and Xuanyao Fong; National University of Singapore,
Singapore
02:55 PM [8C-4]
A Physics-based Compact Model for ULTRARAM Memory
Device
Abhishek Kumar, M. Ehteshamuddin, Anand Bulusu, Shruti
Mehrotra and Avirup Dasgupta; Indian Institute of
Technology Roorkee, India

IEEE Electron Devices Technology and 65

Manufacturing Conference 2024
03:10 PM [8C-5]
Erase Efficiency Improvement of Ferroelectric FET with IGZO
Channel by P-Type SnOx Layer
Jiahao Huang1, Chengji Jin2, Xiao Yu2, Hongrui Zhang2
, Genquan Han3 and Yan Liu3; 1Hangzhou Institute of
Technology, Xidian University, China; 2Zhejiang Lab,
China; 3School of Microelectronics, Xidian University, China
03:25 PM [8C-6]
Proposal for True Random Number Generation in
ferroelectric capacitors using noise-induced switching
Madhav Ramesh1, Amit K Verma2 and Arvind Ajoy3;
1
Cornell University; 2Indian Institute of Technology Kanpur,
India; 3Indian Institute of Technology Palakad, India
03:25 PM [8C-7]
Write Error Rates of Field-Assisted Spin-Orbit-Torque
Switching of Perpendicular Magnetic Tunnel Junctions
Sonalie Ahirwar and Tanmoy Pramanik; Indian Institute
of Technology Guwahati, India

Session 8D : Unconventional Computing II

Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 3, Session Chair : Veeresh Deshpande;
Indian Institute of Technology Bombay, India
02:00 PM [8D-1] [Invited]
Inventing what's next in AI hardware
Nicole Saulnier; IBM Research, USA
02:30 PM [8D-2] [Invited]
SONOS Non-volatile Memory Technology for Analog
Neuromorphic Computing Applications
Ravi Kumar; Infineon Technologies, USA
03:00 PM [8D-3]
Exploiting Single Ferroelectric FET for Efficient Implementation
of Majority Gate Function for Approximate Computing
Musaib Rafiq, Yogesh Singh Chauhan and Shubham Sahay;
Indian Institute of Technology Kanpur, India
03:15 PM [8D-4]
Enhancement of Multi-Timescale Reservoir Computing Based
on Homogeneous Hardware Platform with Controllable Ionic
Dynamics
Zhen Yang, Teng Zhang, Keqin Liu and Yuchao Yang;
Peking University, China
03:30 PM [8D-5]
On-Chip Write & Verify and Endurance Enhancer Circuits
towards Multi-level RRAM Array
Quan Zhang, Longhao Yan, Yaoyu Tao, Ru Huang and
Yuchao Yang; Peking University, China
03:45 PM [8D-6]
Efficient Implementation of Multiplexer and Full-Adder
Functions Based on Memristor Arrays for In-memory
Computing
Zhouchao Gan, Chenyu Zhang, Yinghao Ma, Dongdong
Zhang, Xiangshui Miao and Xingsheng Wang; Huazhong
University of Science and Technology, Wuhan, China

IEEE Electron Devices Technology and 66

Manufacturing Conference 2024
 Session 8E : Magnetic, Straintronic and
Quantum Computing Devices
Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 6+7, Session Chair : Hitoshi Wakabayashi;
Tokyo Institute of Technology, Japan
02:00 PM [8E-1] [Invited]
A Materials-Device Co-Design Framework for Realizing
CMOS Charge Qubits Using Germanium Quantum Dots/
Si-based barriers
Pei Wen-Li; National Yang Ming Chiao Tung University,
Taiwan
02:30 PM [8E-2] [Invited]
Straintronic Micro-Antennas
Supriyo Bandyopadhyay; Virginia Commonwealth
University, USA
03:00PM [8E-3] [Invited]
Light-Induced Static and Dynamic Magnetization Modulation
in Magnetoelectric Heterostructure for Beyond-CMOS Devices
Pankaj Pathak, Ajay Kumar and Dhiman Mallick;
Indian Institute of Technology Delhi, India
03:15 PM [8E-4]
Detection of Defect Density of States in Solution-Processed
Quantum Devices
Himanshu Marothya, Vishwas Acharya and Sandip Mondal;
Indian Institute of Technology Bombay, India

Session 8F : MEMS Devices

Wednesday, March 6, 02:00 PM – 04:00 PM
Session Room : Audi 4, Session Chair : Satinder K. Sharma;
Indian Institute of Technology Mandi, India
02:00 PM [8F-1] [Keynote]
MEMS flexible electronics based on Meta structures
Hongyu Yu; HKUST, Hong Kong
02:30 PM [8F-2] [Invited]
Design, Fabrication, Characterization and Modeling of a
1Hz RF MEMS Resonator for Oscillator Applications
Deleep R. Nair; Indian Institute of Technology Madras,
India
02:55 PM [8F-3] [Invited]
Strain-Mediated Bi-layered Magnetoelectric Devices for
Microsystems Applications
Dhiman Mallick, Indian Institute of Technology Delhi, India
03:20 PM [8F-4]
Asymmetrically Configured MEMS Spiral Resonator with
Ultrathin Internal Electrostatic Transduction
Satish Verma, Manjeet Kumar, Pawan Kumar and Bhaskar
Mitra; Indian Institute of Technology Delhi, India

IEEE Electron Devices Technology and 67

Manufacturing Conference 2024
03:35 PM [8F-5]
Reservoir Computing with a MEMS Nonlinear Resonator for
In-Sensor Computing
Faizan Tariq Beigh1, Yu Chi Chuang2, Nadeem Tariq
Beigh1, Priyanka Singh1, Shashank Narain1, Shreya Singla1,
Yi Chiu2 and Dhiman Mallick1; 1Indian Institute of
Technology Delhi, India; 2National Yang Ming Chiao Tung
University (NCTU), Taiwan
03:45 PM [8F-6]
Design of High Isolation Low Loss MEMS Ohmic Switch for
Radio Frequency Applications
Piyush Kumar, Niharika Narang, Ashok Kumar Dhakar,
Ashwini Kumari, Khanjan Joshi and Pushparaj Singh;
Indian Institute of Technology Delhi, India

Student Research Forum

Wednesday, March 6, 02:00 PM – 04:00 PM
Audi 8+9

Cultural Event / Entertainment

Wednesday, March 6, 05:00 PM – 06:00 PM
Audi 1+2+3

Closing Ceremony and Awards

Wednesday, March 6, 06:00 PM
Audi 1+2+3

IEEE Electron Devices Technology and 68

Manufacturing Conference 2024
 Our Technology, Your Innovation
From Silicon to Systems
Synopsys delivers the most trusted and comprehensive
silicon to systems design solutions, from electronic
design automation to silicon IP and systems, that
accelerate technology innovation. We partner closely
with semiconductor and systems customers across a
wide range of vertical markets to maximize their R&D
capability and productivity, powering innovation today
that ignites the ingenuity of tomorrow. In a world where
the pace and complexity of innovation is accelerating,
the entire silicon ecosystem trusts Synopsys to pioneer
new technologies and help them get to market faster
without compromise.

www.synopsys.com

8th IEEE Electron Devices Technology and 69

Manufacturing Conference 2024 4
 Make Possible®
a Better Future
Applied Materials is the leader in materials engineering
solutions used to produce virtually every new chip and
advanced display in the world. Our expertise in modifying
materials at atomic levels and on an industrial scale enables
customers to transform possibilities into reality.
Our innovations Make Possible® a Better Future.

Learn more: www.appliedmaterials.com make possible

Learn more: www.appliedmaterials.com

© 2024 Applied Materials, Inc. All rights reserved. Applied Materials, Make Possible and the Applied Materials logo are
trademarks of Applied Materials, Inc. in the U.S. and other countries.

8th IEEE Electron Devices Technology and 70

Manufacturing Conference 2024
8th IEEE Electron Devices Technology and 71
Manufacturing Conference 2024
8th IEEE Electron Devices Technology and 72
Manufacturing Conference 2024
 Notes

8th IEEE Electron Devices Technology and 73

Manufacturing Conference 2024
 Notes

8th IEEE Electron Devices Technology and 74

Manufacturing Conference 2024
 Notes

8th IEEE Electron Devices Technology and 75

Manufacturing Conference 2024
 Notes

8th IEEE Electron Devices Technology and 76

Manufacturing Conference 2024