STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
VDSS
Type RDS(on) ID
(@Tjmax)
3
STB12NM50 550V <0.35Ω 12A 2
2
3
1
1
STB12NM50-1 550V <0.35Ω 12A
TO-220 TO-220FP
STP12NM50 550V <0.35Ω 12A
STP12NM50FP 550V <0.35Ω 12A
■ High dv/dt and avalanche capabilities 3
1 3
12
■ Low input capacitance and gate charge
D²PAK I²PAK
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields Internal schematic diagram
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB12NM50T4 B12NM50 D²PAK Tape & reel
STB12NM50-1 B12NM50 I²PAK Tube
STP12NM50 P12NM50 TO-220 Tube
STP12NM50FP P12NM50FP TO-220FP Tube
July 2006 Rev 11 1/17
www.st.com 17
www.DataSheet4U.net
Contents STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220-
TO-220FP
/D²PAK/I²PAK
VGS Gate-source voltage ± 30 V
(1)
ID Drain current (continuous) at TC = 25°C 12 12 A
ID (1)
Drain current (continuous) at TC=100°C 7.5 7.5 A
IDM(2) Drain current (pulsed) 48 48(1) A
PTOT Total dissipation at TC = 25°C 160 35 W
Derating Factor 1.28 0.28 W/°C
VISO Insulation winthstand voltage (DC) -- 2500 V
dv/dt(3) Peak diode recovery voltage slope 15 V/ns
TJ Operating junction temperature
-65 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Table 2. Thermal data
Value
Symbol Parameter TO-220/D²PAK/ Unit
TO-220FP
I² PAK
Rthj-case Thermal resistance junction-case Max 0.78 3.57 °C/W
Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive
IAS 6 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 400 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
3/17
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 500 V
voltage
Zero gate voltage drain VDS = Max rating, 1 µA
IDSS
current (VGS = 0) VDS = Max rating @125°C 10 µA
Gate body leakage current
IGSS VGS = ±30V ± 100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3 4 5 V
Static drain-source on
RDS(on) VGS= 10V, ID= 6A 0.30 0.35 Ω
resistance
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 6A 5.5 S
Input capacitance
Ciss 1000 pF
Output capacitance
Coss VDS =25V, f=1 MHz, VGS=0 250 pF
Reverse transfer
Crss 20 pF
capacitance
Equivalent output
Coss eq(2). VGS=0, VDS =0V to 400V 90 pF
capacitance
VDD = 250V, ID = 6A,
td(on) Turn-on Delay Time 20 ns
RG = 4.7Ω, VGS = 10V
tr Rise Time 10 ns
(see Figure 14)
Qg Total gate charge VDD=400V, ID = 12A 28 39 nC
Qgs Gate-source charge VGS =10V 8 nC
Qgd Gate-drain charge (see Figure 15) 18 nC
f=1MHz Gate DC Bias=0
Rg Gate input resistance test signal level=20mV 1.6 Ω
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 11 A
ISDM(1) Source-drain current (pulsed) 48 A
VSD(2) Forward on voltage ISD=12A, VGS=0 1.5 V
ISD=12A,
trr Reverse recovery time 270 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 2.23 µC
VDD=100V, Tj=25°C
IRRM Reverse recovery current 16.5 A
(see Figure 16)
ISD=12A,
trr Reverse recovery time 340 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 3 µC
VDD=100V, Tj=150°C
IRRM Reverse recovery current 18 A
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/17
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
6/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical characteristics
Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/17
Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Figure 13. Source-drain diode forward
characteristics
8/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Test circuit
3 Test circuit
Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test
switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
9/17
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data
TO-220 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
11/17
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
TO-220FP MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
G1
G
H
F2
1 2 3
L5
L2 L4
12/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
3
13/17
Package mechanical data STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
TO-262 (I2PAK) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
14/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Packaging mechanical data
5 Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
TAPE MECHANICAL DATA
1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
15/17
Revision history STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
6 Revision history
Table 7. Revision history
Date Revision Changes
14-Mar-2004 8 Preliminary version
15-Feb-2006 9 New voltage value on first page at tjmax.
05-Apr-2006 10 Inserted ecopack indication
27-Jul-2006 11 New template, no content change
16/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
17/17