DISCRETE SEMICONDUCTORS

DATA SHEET

BU506F; BU506DF
Silicon diffused power transistors
Product specification 1997 Aug 14
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a SOT186
package. The BU506DF has an
integrated efficiency diode. 2
2

APPLICATIONS 1 1
• Horizontal deflection circuits of
colour television receivers MBB008 3
MBB077 3
• Line-operated switch-mode
applications.
a. BU506F. b. BU506DF.

PINNING 1 2 3

PIN(1) DESCRIPTION Front view MBC668

1 base
2 collector
Fig.1 Simplified outline (SOT186) and symbols.
3 emitter

Note
1. All pins electrically isolated from mounting base.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM collector-emitter peak voltage VBE = 0 − 1500 V
VCEO collector-emitter voltage open base − 700 V
VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − 1 V
VF diode forward voltage (BU506DF) IF = 3 A 1.5 2.2 V
ICsat collector saturation current − 3 A
IC collector current (DC) see Figs 2 and 3 − 5 A
ICM collector current (peak value) see Figs 2 and 3 − 8 A
Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W
tf fall time inductive load; see Fig.11 0.7 − µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-h thermal resistance from junction to external heatsink note 1 6.35 K/W
note 2 3.85 K/W
Rth j-a thermal resistance from junction to ambient 55 K/W

Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

1997 Aug 14 1
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM collector-emitter peak voltage VBE = 0 − 1500 V
VCEO collector-emitter voltage open base − 700 V
ICsat collector saturation current VCE = 5 V − 3 A
IC collector current (DC) see Figs 2 and 3 − 5 A
ICM collector current (peak value) see Figs 2 and 3 − 8 A
IB base current (DC) − 3 A
IBM base current (peak value) − 5 A
Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER TYP. MAX. UNIT

VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V
Cisol isolation capacitance from collector to external heatsink 12 − pF

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCEOsust collector-emitter sustaining IC = 100 mA; IB = 0; L = 25 mH; 700 − − V
voltage see Figs 5 and 6
VCEsat collector-emitter saturation IC = 3 A; IB = 1.33 A; − − 1 V
voltage see Figs 7 and 8
VBEsat base-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Fig.9 − − 1.3 V
VF diode forward voltage (BU506DF) IF = 3 A − 1.5 2.2 V
ICES collector-emitter cut-off current VCE = VCESmax; VBE = 0 − − 0.5 mA
VCE = VCESmax; VBE = 0; − − 1 mA
Tj = 125 °C
IEBO emitter-base cut-off current VEB = 6 V; IC = 0 − − 10 mA
hFE DC current gain VCE = 5 V; IC = 3 A; see Fig.10 2.25 − −
VCE = 5 V; IC = 100 mA; 6 13 30
see Fig.10
Switching times in horizontal deflection circuit (see Fig.11)
ts storage time ICsat = 3 A; LB = 12 µH; − 6.5 − µs
IB(end) = 1 A; dIB/dt = −0.33 A/µs
tf fall time ICsat = 3 A; LB = 12 µH; − 0.7 − µs
IB(end) = 1 A; dIB/dt = −0.33 A/µs

1997 Aug 14 2
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

MGB933
102
handbook, full pagewidth

IC
(A)

10 ICM max

IC max

II
1

I
10−1

10−2

10−3

10−4
1 10 102 103 VCE (V) 104

Mounted without heatsink compound and 30 ±5 N force on centre of package.

Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.

Fig.2 Forward bias SOAR (no heatsink compound).

1997 Aug 14 3
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

MGB934
102
handbook, full pagewidth

IC
(A)

10 ICM max
IC max

II
1

I
10−1

10−2

10−3

10−4
1 10 102 103 VCE (V) 104

Mounted with heatsink compound and 30 ±5 N force on centre of package.

Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.

Fig.3 Forward bias SOAR (with heatsink compound).

1997 Aug 14 4
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

MGK674
120
handbook, halfpage

Ptot max
(%) handbook, halfpage
+ 50 V

80 100 to 200 Ω
L

horizontal

oscilloscope
40
vertical

300 Ω 1Ω
6V
30 to 60 Hz
MGE252
0
0 50 100 150
Th (oC)

Fig.5 Test circuit for collector-emitter

Fig.4 Power derating curve. sustaining voltage.

MGB870
10
handbook, halfpage

VCEsat
(V)
handbook,IC
halfpage MGE239

(mA) (1) (2) (3)

250 1

200

100

0 10−1
min
VCE (V) 10−2 10−1 1 IB (A) 10
VCEOsust
Tj = 25 °C.
(1) IC = 1 A.
(2) IC = 2 A.
(3) IC = 3 A.

Fig.6 Oscilloscope display for collector-emitter Fig.7 Collector-emitter saturation voltage as a

sustaining voltage. function of base current; typical values.

1997 Aug 14 5
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

MGB886 MGB901
2 1.2
handbook, halfpage handbook, halfpage

VBEsat
VCEsat (V)
(V)
0.8 (1)
(2)
(3)
1

0.4

0 0
10−2 10−1 1 IC (A) 10 0 1 2
IB (A)
3

Tj = 25 °C.
(1) IC = 3 A.
(2) IC = 2 A.
IC/IB = 2; Tj = 25 °C. (3) IC = 1 A.

Fig.8 Collector-emitter saturation voltage as a Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values. function of base current; typical values.

MGB877 MBH382
102 handbook, halfpage
handbook, halfpage
ICsat
iC 90%

hFE

10%
time
10 tf
ts
iB

IB (end)

1 time
10−2 10−1 1 IC (A) 10

VCE = 5 V; Tj = 25 °C.

Fig.10 DC current gain; typical values. Fig.11 Switching time waveforms.

1997 Aug 14 6
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

PACKAGE OUTLINE

Plastic single-ended package; isolated heatsink mounted;

1 mounting hole; 3 lead TO-220 exposed tabs SOT186

E
E1 A
P m A1

D1

L1

Q
b1
L

L2

1 2 3

b w M c
e
e1

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A A1 b b1 c D D1 E E1 e e1 L L1(1) L2 m P Q q w

mm 4.4 2.9 0.9 1.5 0.55 17.0 7.9 10.2 5.7 14.3 4.8 0.9 3.2 1.4 4.4
2.54 5.08 10 0.4
4.0 2.5 0.7 1.3 0.38 16.4 7.5 9.6 5.3 13.5 4.0 0.5 3.0 1.2 4.0

Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT186 TO-220 97-06-11

1997 Aug 14 7
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 14 8
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

NOTES

1997 Aug 14 9
Philips Semiconductors Product specification

Silicon diffused power transistors BU506F; BU506DF

NOTES

1997 Aug 14 10
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Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02712
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