2N2222A

Silicon NPN Transistor

Small Signal General Purpose Amplifier & Switch
TO−18 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 437.5C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145.8C/W
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 75 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 6 − − V
Collector Cutoff Current ICEX VCE = 60V, VEB(off) = 3V − − 10 nA
Collector Cutoff Current ICBO VCB = 60V, IE = 0 − − 0.01 A
VCB = 60V, IE = 0, TA = +150°C − − 10 A
Emitter Cutoff Current IEBO VEB = 3V, IC= 0 − − 10 nA
Base Cutoff Current IBL VCE = 60V, VEB(off) = 3V − − 20 nA
ON Characteristics
DC Current Gain hFE VCE = 10V IC = 0.1mA 35 − −
IC = 1mA 50 − −
IC = 10mA, Note 1 75 − −
IC = 10mA, 35 − −
TA = +150°C, Note 1
IC = 150mA, Note 1 100 − 300
VCE = 1V, IC = 150mA, Note 1 50 − −
VCE = 10V, IC = 500mA, Note 1 40 − −
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Rev. 5−22
Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d)
Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 1 − − 0.3 V
IC = 500mA, IB = 50mA, Note 1 − − 1.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA, Note 1 0.6 − 1.2 V
IC = 500mA, IB = 50mA, Note 1 − − 2.0 V
Small−Signal Characteristics
Current Gain − Bandwidth Product fT IC = 20mA, VCE = 20V, f = 100Mhz, 300 − − MHz
Note 2
Output Capacitance Cobo VCB = 10V, IE = 0, f = 1Mhz, Note 3 − − 8 pF
Input Capacitance Cibo VEB = 500mV, IC = 0, f = 1Mhz, Note 3 − − 25 pF
Input Impedance hje IC = 1mA VCE = 10V, f = 1kHz 2.0 − 8.0 kW
IC = 10mA 0.25 − 1.25 kW
Voltage Feedback Ratio hre IC = 1mA VCE = 10V, f = 1kHz − − 8.0 x 104
IC = 10mA − − 4.0 x 104
Small−Signal Current Gain hfe IC = 1mA VCE = 10V, f = 1kHz 50 − 300
IC = 10mA 75 − 375
Output Admittance hoe IC = 1mA VCE = 10V, f = 1kHz 5 − 35 mmhos
IC = 10mA 15 − 200 mmhos
Collector−Base Time Constant rb’Cc VCB = 20V, IE = 20mA, f = 31.8MHz − − 150 ps
Noise Figure NF VCE= 10V, IC = 100mA, RS = 1kW, − − 4.0 dB
f = 1kHz
Real Part of Common−Emitter Re(hje) VCE = 20V, IC = 20mA, f = 300MHz − − 60 W
High Frequency Input
Impedance
Switching Characteristics
Delay Time td VCC = 30V, VBE(off) = −500mV, − − 10 ns
IC = 150mA, IB1 = 15mA
Rise Time tr − − 25 ns
Storage Time ts VCC = 30V, IC = 150mA, − − 225 ns
IB1 = IB2 = 15mA
Fall Time tf − − 60 ns
Active Region Time Constant TA VCE = 30V, IC = 150mA − − 2.5 ns

Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Note 3. 2N5581 and 2N5582 are Listed Ccb and Cab for these conditions and values.
 .230 (5.84) Dia Max

.195 (4.95) Dia Max

.210
(5.33)
Max .030 (.762) Max

.500
(12.7)
Min

.018 (0.45)
Base
Emitter
Collector

45

.041 (1.05)