KAHUTA INSTITUTE OF TECGHNOLOGY NOGRAN

QUIZ OF ANALOG ELECTRONICS T.MARKS:

1. The three terminals of a bipolar 7. The approximate voltage across the C. 0.7 V
junction transistor are called forward-biased base emitter junction 14. If the base-emitter junction is open, D. 3.65 V 26. a certain common emitter amplifier
A. input, output, ground of a silicon BJT is the collector voltage is has a voltage gain of 100. If the
B. p, n, p A. 0.3V B. 0.7V A. floating 20. Voltage divider bias emitter bypass capacitor is removed
C. base, emitter, collector C. 0 V C. 0 V A. is not widely used A. the voltage gain will increase
D. n, p, n 8. The bias condition for a transistor to V B. is essentially independent of βDC B. the voltage gain will decrease
be used as linear amplifier is called C. is dependent on βDC C. the circuit will become unstable
2. In a pnp transistor, the p-region are A. reverse-reverse 15. The maximum value of collector D. produce positive feedback D. the Q-point will shift
B. Forward-reverse current in a biased transistor is
A. base and emitter
B. base and collector C. Collector bias A. βDCIB 21. The disadvantage of fixed/base bias 27. in a certain emitter follower circuit,
D. forward-forward is that the current gain is 50. The power gain
C. emitter and collector C. greater than IE D. IE - IB
D. none of the above A. it produces low gain is approximately
9. If the output of a transistor B. it is very complex A. 50 AV
16. Ideally, a dc load line is a straight
amplifier is 5v rms and the input is 100 C. it is independent of beta C. 1 D. Answer a and b
3. For operation as an amplifier, the line drawn on the collector
mV rms, the voltage gain is D. it produces high leakage current
base of a npn transistor must be characteristics curves between
A. 50 28. the input resistance of a common
A. 0V A. the Q-point and saturation
C. 5 22. Emitter bias is base amplifier is
B. negative with respect to the emitter B. 𝑽𝑪𝑬𝒄𝒖𝒕𝒐𝒇𝒇𝐚𝐧𝐝 𝑰𝑪𝒔𝒂𝒕
A. very dependent βDC A. the same as CC B. the same as CE
C. positive with respect to the collector 10. When operated in cutoff and C. the Q-point and cutoff B. essentially independent of βDC C. very low
D. positive with respect to the emitter saturation, the transistor acts like D. IB = 0 and IB = IC/βDC C. provides a stable bias point very high
A. a switch B. a linear amplifier D. answer B and C
4. The emitter current is always C. a variable capacitor d. a variable resistor
17. The input resistance at the base of 29. a certain common source amplifier
A. greater than the base current a biased transistor depends mainly on 23. in an emitter bias circuit, RE = 2.7 has a voltage gain of 10. If the
B. less than the collector current 11. In cutoff, VCE is A. βDC B. βDC and RE kΩ and VEE = 15 V. The emitter current source bypass capacitor is removed
C. greater than the collector current A. minimum B. maximum C. RB is A. the voltage gain will increase
D. both answer a and c C. equal to VCC D. Both b and c A. 180 mA B. 2.7 mA B. the transconductance will increase
18. In voltage divider biased transistor C. 5.3 mA D. cannot be C. the voltage gain will decrease
5. The βDC of a transistor is its 12. In saturation, VCE is circuit, Rin(base) can generally be determined D. the Q-point will shift
A. internal resistance A. 0.7 V B. equal to V neglected in calculation when
C. voltage gain A. 𝐑𝐢𝐧(𝐛𝐚𝐬𝐞) > 𝟏𝟎𝐑𝟐 B. R1 ≪ 𝑅2 24. collector feedback bias is based on
C. maximum D. minimum
the principle of
C. Rin(base) > R2 D. R2 > 10R
6. If IC is 50 times larger than IB, then A. beta multiplication
13. Once in saturation, a further
βDC is B. negative feedback
increase in base current will 19. In a certain voltage divider biased
A. 500 B. 0.02 C. positive feedback
A. not affected the collector current npn transistor, VB is 2.95V. The dc
C. 100 D. not very stable
B. cause the collector current to decrease emitter voltage is approximately
25. the parameter hfe corresponds to
C. cause the collector current to increase A. 2.95 V
A. βAC
D. turn the transistor off B. 2.25 V
C. RAC