Assignment Sheet Module 8
1. Estimate the temperature at which there is one percent probability that a
state with energy 0.5 eV above the fermi energy will be occupied by an
electron.
[Hint: given f(ε ) = 0.01] Ans: T =1264 K
2. Find the electron concentration in conduction band at 300 K when
effective density of states NC = 2.8 ×1019 /cm3 and Ef is 0.25 eV below
EC. Ans: 1.8× 1015cm-3
3. The effective density of states in VB at 300K is NV = 1.04 ×1019cm -3.
Find the hole concentration in VB at 400K when Ef is 0.27eV above EV.
Ans: 6.43×1015cm-3
4. For GaAs semiconductor, NC (300K) = 4.7 ×1017 cm-3 , NV (300K)=
7×1018 cm-3 and band gap Eg = 1.42 eV. Find the intrinsic carrier
concentration at 300K. Ans: 2.26×106 /cm3
5. For a semiconductor, if effective mass of electron and hole are 1.08m0
and 0.56mo respectively, then find the difference of intrinsic fermi level
and midgap energy ( Efi - Emidgap).
6. For Si, bandgap is 1.12 eV and Fermi energy is 0.25 eV below
conduction band. Find the thermal equilibrium electron &hole
concentrations. Given NC = 2.8 ×1019 /cm3, NV = 1.04 ×1019cm -[Link] it a p-
type or n-type semiconductor?
Ans: no = 1.8×1015/cm3, po = 2.7×104 /cm3