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Bipolar Junction Transistor-2

The document discusses the operation of an ideal bipolar junction transistor in various regimes including forward-active, reverse, and breakdown. It provides equations for the collector, base, and emitter currents in each regime and describes the equivalent circuit models and energy band diagrams.

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Karim Tahiry
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50 views19 pages

Bipolar Junction Transistor-2

The document discusses the operation of an ideal bipolar junction transistor in various regimes including forward-active, reverse, and breakdown. It provides equations for the collector, base, and emitter currents in each regime and describes the equivalent circuit models and energy band diagrams.

Uploaded by

Karim Tahiry
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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6.720J/3.

43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-1

Lecture 35 - Bipolar Junction Transistor


(cont.)

May 3, 2007

Contents:

1. Current-voltage characteristics of ideal BJT (cont.)

Reading material:

del Alamo, Ch. 11, §11.2 (11.2.1)

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-2

Key questions

• How does the BJT operate in other regimes?


• How does a complete model for the ideal BJT look like?

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-3

1. Current-voltage characteristics of ideal BJT (cont.)

� Forward-active regime (VBE > 0, VBC < 0)

Summary of key results:

WB << LB

n-Emitter p-Base n-Collector

IE<0 IC>0

IB>0

VBE > 0 VBC < 0

qVBE
IC = IS exp
kT

IS qVBE
IB = (exp − 1)
βF kT

qVBE IS qVBE
IE = −IC − IB = −IS exp − (exp − 1)
kT βF kT

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-4

• Current gain

n2i DB
IC NB WB NE DB WE
βF � � n2i DE
=
IB NB DE WB
NE WE

To maximize βF :

• NE � NB
• WE � WB (for manufacturing reasons, WE � WB )
• want npn, rather than pnp because this way DB > DE

βF hard to control ⇒ if βF is high enough (> 50), circuit techniques


effectively compensate for this.

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-5

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-6

• Equivalent circuit model

qVBE
B IS exp
kT

IS qVBE
(exp -1)
βF kT

qVBE
IC = IS exp
kT

IS qVBE
IB = (exp − 1)
βF kT

qVBE IS qVBE
IE = −IC − IB = −IS exp − (exp − 1)
kT βF kT

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-7

• Energy band diagram

E(n) B(p) C(n)

EC
EF
thermal�
equilibrium
EV

EC
Efe
forward� qVBE
active Efh
EV
qVBC

• Summary of minority carrier profiles (not to scale)

pE nB pC

� pCo
pEo nBo
x
-WE-xBE -xBE 0 WB WB+xBC WB+xBC+WC

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-8

� Reverse regime (VBE < 0, VBC > 0)

IE : electron injection from C to B, collection into E


IB : hole injection from B to C, recombination in C

n-Emitter p-Base n-Collector

IE>0 IC<0

IB>0

VBE < 0 VBC > 0

Minority carrier profiles (not to scale):

pE nB pC

� pCo
pEo nBo
x
-WE-xBE -xBE 0 WB WB+xBC WB+xBC+WC

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-9

Current equations (just like FAR, but role of collector and emitter
reversed):

qVBC
IE = IS exp
kT
IS qVBC
IB = (exp − 1)
βR kT
qVBC IS qVBC
IC = −IE − IB = −IS exp − (exp − 1)
kT βR kT

Equivalent-circuit model representation:

IS qVBC
(exp -1)
βR kT
qVBC
B IS exp
kT

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-10

Prefactor in IE expression is IS : emitter current scales with AE .

B E B B E B

IE AE
IB AC

C C

But, IB scales roughly as AC :

• downward component scales as AC


• upward component scales as AC − AE � AC

Hence, βR � 0.1 − 5 � βF .

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 18-8

Forward-active Gummel plot (VCE = 3 V ):

Reverse Gummel (VEC = 3 V ):

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-11

Energy band diagram:

E(n) B(p) C(n)

EC
thermal� EF
equilibrium
EV

Efe qVBC

EC qVBE
reverse
Efh

EV

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-12

� Cut-off regime (VBE < 0, VBC < 0)

IE : hole generation in E, extraction into B


IC : hole generation in C, extraction into B

n-Emitter p-Base n-Collector

IE>0 IC>0

IB<0

VBE < 0 VBC < 0

Minority carrier profiles (not to scale):

pE nB pC

� pCo
pEo nBo
x
-WE-xBE -xBE 0 WB WB+xBC WB+xBC+WC

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-13

Current equations:

IS
IE =
βF
IS IS
IB = − −
βF βR
IS
IC =
βR

These are tiny leakage currents (∼ 10−12 A)

Equivalent-circuit model representation:

IS
βR
both reverse �
biased
B

IS
βF

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-14

• Energy band diagram

E(n) B(p) C(n)

EC
EF
thermal�
equilibrium
EV

qVBE Efh
EC
cut-off Efe qVBC

EV

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-15

� Saturation regime (VBE > 0, VBC > 0)

IC , IE : balance of electron injection from E/C into B


IB : hole injection into E/C, recombination in E/C, respectively

n-Emitter p-Base n-Collector

IE IC

IB<0

VBE > 0 VBC > 0

Minority carrier profiles (not to scale):

pE nB pC

� pCo
pEo nBo
x
-WE-xBE -xBE 0 WB WB+xBC WB+xBC+WC

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-16

Current equations: superposition of forward active + reverse:

qVBE qVBC IS qVBC


IC = IS (exp − exp ) − (exp − 1)
kT kT βR kT
IS qVBE IS qVBC
IB = (exp − 1) + (exp − 1)
βF kT βR kT
IS qVBE qVBE qVBC
IE = − (exp − 1) − IS (exp − exp )
βF kT kT kT

IC and IE can have either sign, depending on relative magnitude of


VBE and VBC and βF and βR .

Equivalent circuit model representation (Non-Linear Hybrid-π Model):

IS qVBC
(exp -1)
βR kT

qVBE qV
B IS (exp - exp BC )
kT kT

IS qVBE
(exp -1)
βF kT

Complete model has only three parameters: IS , βF , and βR.

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-17

Energy band diagram:

E(n) B(p) C(n)

EC
thermal� EF
equilibrium
EV

EC
Efe qV
saturation qVBE BC
Efh
EV

In saturation, collector and base flooded with excess minority carriers


⇒ takes lots of time to get transistor out of saturation.

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 35-18

Key conclusions

• In FAR, current gain βF maximized if NE � NB .


• βF hard to control precisely: if big enough (> 50), circuit tech­
niques can compensate for variations in βF .
• BJT design optimized for operation in forward-active regime ⇒
operation in inverse regime is poor: βR � βF .
• In saturation, BJT flooded with minority carriers ⇒ takes time
to get BJT out of saturation.
• Hybrid-π model: equivalent circuit description of BJT in all
regimes:
C

IS qVBC
(exp -1)
βR kT

qVBE qV
B IS (exp - exp BC )
kT kT

IS qVBE
(exp -1)
βF kT

• Only three parameters needed to describe behavior of BJT in


four regimes: IS , βF , and βR.

Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].

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