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Silicon NPN Transistor Specifications

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Guille Soria
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0% found this document useful (0 votes)
54 views1 page

Silicon NPN Transistor Specifications

Uploaded by

Guille Soria
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Equivalent circuit C

2SD2438
B

Darlington (7 0 Ω )
E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
5.5±0.2
VCBO 160 V ICBO VCB=160V 100max µA 15.6±0.2
3.45 ±0.2

VCEO 150 V IEBO VEB=5V 100max µA

5.5
9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 150min V

23.0±0.3
IC 8 A hFE VCE=4V, IC=6A 5000min∗ ø3.3±0.2
a
IB 1 A VCE(sat) IC=6A, IB=6mA 2.5max V

1.6
b

3.0
PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V

3.3
Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz
1.75 0.8

16.2
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 2.15
1.05 +0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2


-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) ( mA) (mA) (µs) (µs) (µs) a. Part No.
60 10 6 10 –2 6 –6 0.6typ 10.0typ 0.9typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


A

A
2. A

(V C E =4V)
0m

8m
Collector-Emitter Saturation Voltage V C E (sa t) (V )
5m
10mA

8 1. A
3 8
1.5m
2.

1. 3m A

1.0m A
6 6

Collector Current I C (A)


Collector Current I C (A)

0.8 mA 2

4 I C =8A 4

mp)

)
)
I C =6A

Temp
Temp
0.5mA

e Te
I C =4A
1

(Case
(Case
(Cas
2 2

125˚C

–30˚C
I B =0.3mA

25˚C
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
40000 50000 4
125˚C
DC C urrent G ain h FE

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
25˚C
10000 10000
1
5000 –30˚C
5000

0.5

1000

1000 500 0.2


02 0.5 1 5 8 0.2 0.5 1 5 8 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =12V)
120 20 80
10
m

10
s

10
M aximum Power Dissipa ti on P C (W)

100 0m
Typ DC s
W

5
Cut- off F req uenc y f T (MH Z )

60
ith
Collect or Cur ren t I C (A)

In

80
fin
ite
he
at
si

60 1 40
nk

0.5
40

Without Heatsink 20
Natural Cooling
20
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –8 3 5 10 50 100 200 0 50 100 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

152

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