UNIT IV FIELD EFFECT TRANSISTOR Junction field effect transistor (construction, principle of operation, symbol) Pinch-off voltage Volt-ampere characteristics MOSFET (construction, principle of operation, symbol) Characteristics in enhancement and depletion modes ‘Small signal model of JFET & MOSFETFIELD EFFECT TRansisTOR (Fer) ¢ | \ the Field effect Transistor abbreviated as | FET is an anothen Semi Cenducton device Uke a [err which Can be Vsed as an amplifier on switch: Like BIT, FET is also a thnee tenminal device, howeyen the Principle of openation of FET is Completely - different from that ef BIT. : the Name Field Effect %S denived from the fact that >the’ flow of connent thnovgh the condveting region is controlled by OH electric Feld Types of FET. to Bosed Mm the censtnectio, the FET can be classified in EO two types b. Tonetion Field Effect Thansiston (TFET) Semicon doctor, 2. metal oxiderField ERFect Transiston (mosFert) @) Insvlated Gate FET CTGFET) (on) Metal oxide silico 4nansiston (Most) er ot ncckamet Pe thannel Bepleton Enhancement geet ret MosFET MOSFETFeatunes of FETS Fer is 0 vetboge cemtnolied device because ootpot eomnent is Controlled by Vamying the; mpot 4 > Fer is a wonipolan device becavse the 2 cunnent Cmductio is only by Majonity change canniens > the three tenmmats of FET ane hamed 45 Drain (p) , Sevmee (Ss) and gate CQ): ovk of these tenminals gare tenminal acks 45 Controlling element > Fer iS “Hsne tempenatune stable as Compared to prt. —> Fer has veny hgh inpot Impedance. Typically 4 the mange of Sevenat mega ohms. Fer has vkighen input impedance than BIT, So FET 1S pnefenned im ampli fens whene high inpot impedance is Keqprined > Feét's Regine less Space than that of BIT hence they ane preferred in Totegaated Ancvits , Jonctim Field Effect Tnansiston (sret) — epending opm the Majonity canniens TFET has been classified im to two types. )N-chammet seer with electnems as the majonity change —- canniens 2) P-channel TFET With heles as the majonity change canniens.Construction ond Symbol of a “7 Drain (p) ohmic Contacts N~ Channel Teer: | Dnain(>) (a) —N-channet - N 4 Sovrce ($, L-——* seonee ¢¢) a gate “ J gate Fg: Structure and symbol fon N-Channet Srer , TE Consists of & N-type ben tshich made of is Sikeem. ohmic contacts (tenminals) made at the two ends of the ban, ane called Sounce and drain. Soonce(S); this tenminal is Connected te the Negative tenminal of the batteny. Electnovs which| ore the majonity camdens in the Netype ban enten the ban thneagh this tenminal. Drain( dD): this tenminal is Connected to the Pesihve tenminal of the batteny: the majority canniens leave the bax thnoygh this tenminal. Gate (q): Heavily doped P-type Silicon is diffused m™m beth sides of the N-type silicon ban by al Pr juetions ane fonmed- these layens ane | | joined togetnen and called gate (q)- ichannel -the ~ thin region between the two P-4Gates ——C—C—sCC—CSCCSCN the n-type ban, the FET is. Known a5 n-channel TrET: Construction (structure) and symbol of P-Channel TrET/: ey pnain(>) e che Contacts . Gatela) Pchamet seme ts) Source(s) Fig: Struct one ond symbol fer p-channel a the device iS made of P type ban with, Figese: the juso metype gates os Shen m Prevciple of — wonking of P-chommel SFET ond n- chomel 3FET 1S simitan. the Only diggeaence is that, im n-channel TFET the cunnent 1S comme’ by elecknens while im P pene aces tee Connied by Neles-openation of N-channet IFET {Static characteristts of srer) Dwhen Vas z0 and the cinevit — Symbol fon Nechamnel SFET 18 Shou in figure below a \. AD 4 4 Mes 7 - Yep we veltage is D when Vgg2O_ and Yps =O % hE M + oppied between dnoain od sousce , and gute of the depletion the thiekness is uniform and Seunce , regions mound the PN Jjonchons Shown in Figure below: Dwhen vy. =o and Ves 1s decreared from Fere Tr this case, the PN junctions ane Hevense biased and hence the ickness Cf the depletion Region increasesAS Ves 18 decaeased fem zene, the nevense bias Vottage acnoss me PN djonction is tucaecased and hence , the thickness of the depletion megion Ww \ % make the channel, ontit the tuo depletion negions \ ) the Contact sith each othen+ tH this Condition bo cut OFF - rhe Value of channet is said to Vgs which is nequined catlea the cut-off a > 3) when Veg=0 and Vps 's increased from 670 + to cub- orf the Channel ts Brain is positive With Aespect to the Sounce with Ves =O» Now the Majonity canniens ie electnons flew shnoogh the N-channel fren Sovace to drain. Therefore the conventional coment I, flees fre Drain to Sounce. The maguidude of Cordent will depend “pm the Povtewing ficken So many factons. thy the channel acts as a esiston. Becavse of the Nesistance of the channel and | the applied voltage pg, thene is a gnedual ierease [of positive potential alg te channel fiom Sovace to drain. thus the nevense Voltage acness the PN Junction imeneases and hence the thickness of the depletion ede alse meseases. thenefone the chawnet | is wedge Shaped 48 Shown In Figore below’as Yaq AS Vp, is imcaeased, the cnoss Sectenal omen of the channet will be neduced. At a centain Nalune ef Vos, the Cnoss Sectional anea at & becomes minimum. At this ee the channel is Said to be Pinched off and the Comes ponding Vs is called — pinch-ore voltage (yp) As a nesott of the Aecreasing CASS Section of the channel with the tacnease of Vng, the following nesvlts ane obtained YL Break down oa in gion : Fptvne) § NM Snegenn HOt Nae vote. B ° ve ———> vps (v) Fig Drain choractenristinDAS Vos is imcheased fier Zeno, Tp incneases along op: the aoe from Vpg =0V +0 Vpg= Vp is called the chmic megion: RW) when Vpg= Vp, Ip becomes marimum+ when Vs is bacneased — beyond Vp, the length of the pinch-off region Wackeases. Hence thene is no funthen imerease of Ip. iii) AE a centain voltage comespandi +o the point B, Tm Suddenly imeneases. this erfeck is due to the avalanche moltiplication of @lectnons caused by breaking of covalent bends of Silicen atoms in the depledion, region between the gore and drain. a) when Vas is negative ond Ynys 1S incaeased '- when the gote is maintained at a Negative Votage tess than the negative cot-off Voltage, the mevense Veltege across the Gunetion is fonthen Gacneased- Hence for a negative Valve of Vas, the conve of Fp Vensus Vag HS Swertan is shown in figose above From the conves it is Seen that above the Pinch - off Veltag ob a Constant Value of Vos , Ta trcreases with an wWerease of Vas. Hence a JFet is Suitable For use as a voltage amplifier, Similan to a tnansiston ampli fier!Chanoctenisti¢ panametens of the JFET Toa TreT, the dna connent Ty depends upon jthe dnain Voltage Nog Gnd the gete _ Vas ° Any Jove of these Vaniables may be fied and the Melation between the othen two ane detenmined. these nelations ame determined by the thnee panametens which one defined below )) transconductance @n) Mutual conductance ( Sq) '- gt is the Slope of the tnansfen chanactenistic cunves, and is defined by Tp _ AT Qn = Vp. = Constant Des _ ys ze if the matio ef a Small change in the dmain cunnent to the Conmesponding Small change in the gate Voltage at a Constant dnain voce gt has the omit of Comductance im mho. ~~ 3) Drain Resistance LULL Necipnocal of the Slope of the daain ~-fimed by chonactenistics and is deé- | ay -[2s\ Nes | an - AT Vag = Constant | as | Tt is the Ratio of oa smatl change in the dnain Voitage to the commesponding small change in |Jthe drain Cunnent at a constant gate Voltage oe has he onit of Mnesistance in ohms 3) fimplification facton() 1 Zt is defined by pfs Nps ANVo5 2 Vas a xp *%es , Ly = constant Tt is the notio of a smatt change in ehe dnain cole te the cConmesponding Smal change in the gate Mee at a enstant drain connent. Hene the negative Sign shows that whew Vag is incneased, Vp, must be decreased for Ty to Remain coms tant Relationship among FET Panametens AS Tp depends mm Vpg and Vg,, the fonctional equation can be expressed as T= (os, 7) 9F- the drain Vettage is changed by a Smatt amoont from Vv, ns to ( Vyg + 4 vps) and the pete Voltage is ie by A Small amoont from Ves to (es+ oVqs), then the Connespanding small change in Ty May be sbtained by applying Taylen's theanem with neglecting highen onden tenms. thus a Smatt change or, is oven byqT Vp a\as + 2m ) aves Arty =(—— avg 2% Nye Ves | i by 4V, os dividing both the sides of this epation by as we obtain 4Nps t. AX» 2p as che = 4 Nos aNas 2 Ves sp \eXasfy Ves > Ds G Ty is eonstant then Ald _ ay | OVys 7 4 Veg BVes Ds Sebsttoting the Valves of Pontial diffenental Co-eres veients , We get 7 D> [P= NG * Bey | nq t | thenefone amplification facton (fH) is the product of drain nesistance Cara) and tnans conductance C8m) gake | Pasblem + when a sovense. Voitage OL 12V is applied to | seer, the gate Comment is Ina . Detenmine the [Mesiskamce between gate “and sounce Sol Yog = 12v thenefore gate toproblem: when the Nevense gate Voltage of I=¥ +s apptied tof TrET changes fiom 4 to BaV, the drain connent changes from 3 tO LEMA- Find the Value of tnans Conductance | ea avqs = 4-849 = oOLV OIp = 6-13 = oO3mA go = SER Los xis 7 = 3m mhas ANas or Expression fon saturation dnain connent (er) Transfer chahactenishes of TFET Fon the “tnansfen charactenisti¢s Vps is maintained constant at a Suitable value gresten than the Pinch - off ee Vp: The gete Voltage Vag is decreaned fron Ferd BoINN Tp is neduced to geno the tnonsfen chanactenistics Ty Vensus Ves is showy im figene below. se r ‘ele <— Vas W) Transfer chanactenisties of TFET y| the shape ef the tnansfen chanactenistic is Veny Meanty Panabola: rt 1s found that the charac tenists is appnoximately Aepresented by the panabola. L Ty, = toss | ' 7 a —o whene Ty, > Saturation drain Cunnent Tyssg = the valve ef Tp, when Ves =O | Vp = Pinch - off re ditfenentioning e¢ © with respect to Ves, we CoM ebtan expnession for gm en, : SS masea{r- Yas (a 2 Ves | Vp p | we Know that dao 2 tos Vps = Censtant 3Ve5 -2 TT. | _ DSS ve Gm = - 48 —@® Yp Np From & 7 40 r- Nes | Tps Np Loss Sabstitoting Hay | in ee © mm = 7-2 J Ips Toss d re —-@® P Suppose when Vgs=o , bee Bin = Imo L- 4then from ty @ thenefare from & @ dm = Imo slope ef the Transfer chanactenistic at Tyg raom & @ we hove OK tes a V Fos Foss 8G 5 Sobstie Hing Ios = Toss tps _ ~2 ps5 spss ONGs Vp “lp 2 this eqpation shows that the Fomgent to the conve St Zs = Toss , Vgs= 0, will have an intencept at oe om the ais of Veg as shown tm fiquee. thenefore the value of Vp con be found by drawing the Komgent at Tas = Tose , Vas =0 the Gate sovxce Cot -of f Voltoge Yascoge) om the | |tronsfen chanactenistic is eyrat to the pinch-off Voltage Vp» om the drain Choractenistics ie Vp =Mastoee)| Ves 7 therefore Ip = Tpss | '- Vqs tort)| | | | Problem: A FET has a dnain conment of 4ma+ If Tpes- Bma and Ves(opg) = -6¥: Find the Values of Vgs and Vp t Ves eee [:- eas Yas Core) 2 4m = 8m E te: V. 2 {t+ “43 2 Vas =-b46 v 6 Vp = I¥4s cee} OMe Pnoblem “- An N-channel geet has T,.5 = SMA. and Vp =-5V. Dekenmine the minimum Value of Vos for Pinch - of negion and the dnain cunnent Tps , fer Vas = 7-24 in the pinch - off ng Sclution: The minimum value of Vps fer pinch-off to occun fer Yas =-2V is - -~ (-5)=3Y Mostmin) = Vas 7 YR = 7? (-s)=83 L + t Ce Tops = toss |'7 a P L . <2 Ips = axe 1: (=)] = 2EBBMA Companisem of geet. "FET openation depends Canniens. that's ihy they ane Brr change canniens. so BIT iS ond 6IT oly om the flow of Majonity catled oni polan devices. operations depends em beth minonity and Majoaity called Bi polaa devicesgas the FET has ho Jonctions and te Conduction is through an N-type oA P-type Semi conducton Moterial Fer 1g less noisy than BIT: Bas the inmpot cimevit of FET {5 Sevense biased, Fer exhibits a much higher impot impedamce ond Cowen ovtpot impedance. So FET can ack as excellent buffer ampli fien Bot the BIT has low avtpot impedance because its inpot Cinevit is forwand biased Controlled device , whene as BIT 4 FeT ig a voitag is a cunnent Cemtrotied device 6 FtrS ane much @asien to fabricate ond one Panticolanty Borate | fen cls | bacouee: oney coach ae Space thon BIT's+ 6 FeT'S ane mene tempenatuse stable than BIT'S: 3 BT'S ame cheaper to produce Ehan FET! Ss: Applications of seer lo Fer is ‘sed as a butter im measuang instruments, | Neceivens since it has high input impedance and low ovepot impedance - a. fets ane used im RF amplifiers In FM tenens and pment fon the lew Moise Ane communication 4b level: 3B Since the input capacitavce is lan, Fer S ane osed in Cascade amplifiens in measuring and test | equipments -14) since the device is Voltage Cemtrolled, it is Used as a [Veltage Vaniable esiston in opedationat omplifiens: 5. Fer's ane used in mixen cinevits in FM and Ty AEcewed 6 FETS ane used im oscillator cineuits PFErS ane used in digitat cincvits in compotens, Memory cincvits because sf its small size. MOSFET (metaL oxwe semiconpuctoR FIELD EFFECT TRAWSISTex) METAL OXIDE SEriicomDLETOR FIELD EFFECT TRANSISTOR is on important semi Conducten device and is widely used in Many cinevit applications the Inpot impedance of a MosreET is much more than thot of a IFET because of very Smalt ge ‘ealeg comsent- xe srer mesretT has Gate , Souce ond dnote MesreET ig abso called rarer ( Insulated gete Field effect Transiston) because the. Gore of a mosrer fg imsvtated from the channel Moseer is clamified in to top types 1) Fehancement ty pe Mos FEC % Deplehon type Moser Principle : By oPriying a tnansvense electnic field across | an lwsvlater, depasited on the Semi Conducting mat atenialthe thickness and hence the Mesistance of the Conducting channel of a Semi conducting matenia) Cam be Controlled, ina depletion mesrer , the Contolling eclectic \field acsoys an nSudaton , deposited m7 the semircend - waar Mavekieck , Ws thicrKess and Wienre Heer pesiebaned of 6 eee chore neducen the Mimber of meson ty Canniens available for Conduction, wheae as in the enhonecement MosFer, application of Master electyic field Causes an increane in the wumben of Mejor ty Gren. tn he fendunchiwg adnan of a transistor Enhancement type MosFET ‘- ns chamnel | Symbol of * Enhancement cemstnuetion ond ype moseer Sobtnate igo): Symbel Sovnce Agee)? Soe fig ta) Figte) shows the Cenetnuctional details af a w-charnel | mesrer. these is ony a single P- region: his negion ig called Svbtrate. Two aes doped ec aneane diffused in a lightly doped P- tape subtaate. ome x fom is calle the Sovace and the other ¢ $ called drain. A thin insulating lagen Ge cin ie) deposited Joven the surface of the structvae and holes ase Cot Mmto the oxtde layer, allowing Contact with Ssevace and dna. then a thin layer of At 'S foamed over. | the bayer of SiO,» Thin metal layer covers the entiae channel Region ond it fons the gel G the etal anea of the gee, Gmjonction with eat onde teye of = SiOn and fhe Semi Conductor channel forms a Parallel plate capacitor. Operation of N-channel Enhancement type Mosrer : | Sovace Vas Gate g Drain a+ a < . we Vos : SE the subtvate is gneunded ond a Positive vVeitage is applied at the gate, the positive |’ [shomge_om date induces an egal Negative change om |:the Subtnate side between sevsce and drain Regions: | the negative change of electrons which ane mimonity Canniens mM the -P-type subtvate fonms AR the on invension layen- AS the positive Voltage om the : : change Gere ineneases , the induced negek ve ‘3 In the semi Conducton incaeases - Hence the lows from cemductivity incaease s and Guanemt $i Source te dnain thnough *he Induced channel: Chanactenistics of N-kepe chomnel Enhancement type MosFET i- D) Drain chanackenistes - | the Drain choractenistcs of N-Channel Errancemont type MosFET is Shown In figure belo ry (mn) pinch-off Matues conve nepnesents 2 — Ves t4BN : 55 ———— Nes = sav Ves = +6¥ —Nes 245v — Vas 249 _—___———_ us =3. Yos Cv) FQ: Drain chonactenisticsr 2) Tnansfen chanactenistits i i aca the’ tmansfen chanactenistics of N-Channel enhancement type mosreT ts shown ih Figure below x, 08) —_——»> Vgs Cv) Fig? Transfer ehoractenistics. 2) Depletion type mosret + This i5 also classified in to two types a) N- channet depletion type MmosFer b) P- chownel depletion type MOSFET @ N - chawnet depletion type Mosret * | cCondtnuction ' the Constnuctiom of am N-channel depletion MosfeT is shown in Figure below, Where an N-chamnel is diffused between the source and dnain. to the basic stnuctuse Of TMIOSFET.gate Source Syenbols Drain P-chawne) | $ when Vago end the dnain pd at a posity potential with Mespect to the sovnce , the electnons Cmojonity canniens) flow thnovgh the channel fron Sounce to drain thenefone , the Cconventioal Connent Ty flows thnovgh the channel from drain to Source ag gate veltage is made negative , positive change consisting of oles 1s induced i the channel thnovgh $10. 9F the gate - channel Capacitor: the imtnoduction of the positive change causes depletion ef mobile electrons wm the channel. Lr ee channel: dre depletion Aegion depends ™ the shape of Vgs ond Vos + Hence the channel will be wedge Shaped a5 shown in figureif i = ’ when Vi. is incseased, Tp incaeases and it becomes Practically Constant at a Centain Value of Vag , Called the Pinch-off Velkage. the drain Comnent Ty Almest gets saturated beyond the pinch-off voitage. | the depletion mosFer Can also be operated in ay Enhancement Mode. gt is only necessany +o apply Positive gate voltage So that megative changes ane induced in to the n-type channel. Hence the Comductivity of the channel creases and Tp increases Prin chorsctenistics of p- channel depletion type MOSFET : Ip ewes MBM satonation pain | veg say 1 —— Ves: ev ——— Vey = -1v Vas = -2v ————. We -3y eee Vos (v) Tronsfen — charactenist deplehore | modecompanison of OSFeT gret DTA enhancement and depletion types of MesreT, the tronsvense Electric field induced acaoss am insulating layer deposited om the semi Conductor moaterdal Controls the temduckivity of the lene or ne! | El the transvense electvi¢ field across qhe reverne bianed aut Chawne |. PN jonetion contnets the conductivity of He \ ; 1 the 2) the gore leokage coment ino a MosreT WS OF pesistance of OH onden of t6'? a. Hence the mpot Joe to > : MosFet is very high in the onder of 10 ° nt i the on the gate leakege quarent of @ FEET 5s of e onda i onder of isda and its inpok pesistance 1S of the on of an 3) the vtpot choroctenistics of te TFET one Plato tron those of the Mosrer’ ond hence , the drain mecietore| Ge ey | TCT Co.) to ima) is mock Wigher than Yak of a mosrer (1 +0 sok) : H) grers ane operored only tn the depletion mode: the depletion type mosFeT may be operated in beth depletion and enhancement mode 5) Companing to JFET, MosFer's ane easier to fabricate, 6) mosrer is Veny Sosceptible {2 overtead veitege and[reeds special handling duning installation: xe gets damaged Gosily if ik iS not pnepenty handled F MOSFET S ane widely used in digital VLSI Cincuits than FET S because of thein ea ea Smatl Signal moder 2+ rer: Frem the drain ond tnansfen chonactenistics op the field effect tmansisten we com that, the dnain ¢enment of an FET is a fevction of dnaim to Source Vertoge Cvs) and gate +0 Source vortoge (4s): ad vanging eonnents and Vertegen fee an ret tp = FlVes, Vos) =O S$ both gate ond dnain Voltages ane Vanied, the change in drain Cunnent js gven appronimately by fast eee cna), ie thes eaiens expansion of eg © (22) aug (8B) 9 avs), as Eve Ms ns: bsh. ay In Small Signal Notation and A Yos =¥yg 2 © Se —® whene than conductance n+(3) oe .) 4 Lay 3) \ me OY ds. a vy ond drain Resistance Ay = (ous) 2 (Nps ‘ae oe i> ves ato Jugs = a Nesfm compli fication facton fi fet on FET may be defined as Me (3) _ (Caves { Fe — = [Na > OMs Ap \ aves Jo C), id 2 i ee fom &4@ by setting tgao, ik cam be Verified that Ly td and Bor One helated by B =¥4 dn] 4 small Signa) model fox FET im Common Sovace conpiquaation can be drawn sahisfying & as shaan in Fy 3 fang & © 0 below : . 4: ta —- . Nye Sen Vgs Ra Vas an 7 Fig: gma) signal mode) for FET In C5 Com fig nekion This low freqrency model fon FET has a Nonton 5) eonnent generator hose ootpoe cinevit with o dependent magnitude is proportional to the gate to Sevace Veitage the prepontionality facton is the transconductance * 3,9/ the ovtpok mesistamce is Ad~ the impo Resistance behweey the. eee and Source iS infinite y Since it is assomed that the ‘Mevense biased gate draws no Cuanent. Fea Bhe same Meason the Mesistance between gue and | anata 13 assumed to be infinite.