VN02N

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V DSS R DS( on) I OUT VC C

VN02N 60 V 0.4 Ω 6A 26 V

■ OUTPUT CURRENT (CONTINUOUS): 6A @

Tc=25 oC
■ 5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE SHUT-DOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT PENTAWATT PENTAWATT
■ VERY LOW STAND-BY POWER (vertical) (horizontal)
DISSIPATION

DESCRIPTION
The VN02N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power PENTAWATT
Technology, intended for driving resistive or (in-line)
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit. ORDER CODES:
The input control is 5V logic level compatible. PENTAWATT vertical VN02N
The open drain diagnostic output indicates open PENTAWATT horizontal VN02N (011Y)
circuit (no load) and over temperature status. PENTAWATT in-line VN02N (012Y)

BLOCK DIAGRAM

September 1994 1/11

VN02N

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V( BR)DSS Drain-Source Breakdown Voltage 60 V
IO UT Output Current (cont.) 6 A
IR Reverse Output Current -6 A
II N Input Current ±10 mA
-V CC Reverse Supply Voltage -4 V
ISTA T Status Current ±10 mA
VE SD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
o
P tot Power Dissipation at T c ≤ 25 C 29 W
o
Tj Junction Operating Temperature -40 to 150 C
o
T stg Storage Temperature -55 to 150 C

CONNECTION DIAGRAM

CURRENT AND VOLTAGE CONVENTIONS

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 VN02N

THERMAL DATA
o
R thj-cas e Thermal Resistance Junction-case Max 4.35 C/W
o
Rthj- amb Thermal Resistance Junction-ambient Max 60 C/W

ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)

POWER

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VC C Supply Voltage 7 26 V
R on On State Resistance I OU T = 3 A 0.8 Ω
I OU T = 3 A T j = 25 o C 0.4 Ω
IS Supply Current Off State T j ≥ 25 oC 50 µA
On State 15 mA

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t d(on) Turn-on Delay Time Of I OU T = 3 A Resistive Load 10 µs
Output Current Input Rise Time < 0.1 µs T j = 25 o C
tr Rise Time Of Output I OU T = 3 A Resistive Load 15 µs
Current Input Rise Time < 0.1 µs T j = 25 o C
t d(off ) Turn-off Delay Time Of I OU T = 3 A Resistive Load 15 µs
Output Current Input Rise Time < 0.1 µs T j = 25 o C
tf Fall Time Of Output I OU T = 3 A Resistive Load 6 µs
Current Input Rise Time < 0.1 µs T j = 25 o C
(di/dt) on Turn-on Current Slope I OU T = 3 A 0.5 A/µs
I OU T = I OV 2 A/µs
(di/dt) off Turn-off Current Slope I OU T = 3 A 2 A/µs
I OU T = I OV 4 A/µs

LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V IL Input Low Level 0.8 V
Voltage
V IH Input High Level 2 (*) V
Voltage
V I(hy st.) Input Hysteresis 0.5 V
Voltage
II N Input Current V IN = 5 V 250 500 µA
V ICL Input Clamp Voltage I IN = 10 mA 6 V
I IN = -10 mA -0.7 V

PROTECTIONS AND DIAGNOSTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V STAT (•) Status Voltage Output I STAT = 1.6 mA 0.4 V
Low
V US D Under Voltage Shut 6.5 V
Down

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VN02N

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V S CL (•) Status Clamp Voltage I STAT = 10 mA 6 V
I STAT = -10 mA -0.7 V
tS C Switch-off Time in R LOA D < 10 mΩ Tc = 25 o C 1.5 5 ms
Short Circuit Condition
at Start-Up
I OV Over Current R LOA D < 10 mΩ -40 ≤ T c ≤ 125 o C 28 A
I AV Average Current in R LOA D < 10 mΩ Tc = 85 o C 0.9 A
Short Circuit
I OL Open Load Current 5 70 mA
Level
o
TTS D Thermal Shut-down 140 C
Temperature
o
TR Reset Temperature 125 C
(*) The V IH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor
cal culated to not exceed 10 mA at the i nput pin.
(•) Status determination > 100 µs after the switching edge.

FUNCTIONAL DESCRIPTION The consequences of the voltage drop across

The device has a diagnostic output which this diode are as follows:
indicates open circuit (no load) and over – If the input is pulled to power GND, a negative
temperature conditions. The output signals are voltage of -VF is seen by the device. (VIL, VIH
processed by internal logic. thresholds and VSTAT are increased by VF with
To protect the device against short circuit and respect to power GND).
over-current condition, the thermal protection – The undervoltage shutdown level is increased
turns the integrated Power MOS off at a minimum by VF .
junction temperature of 140 oC. When the If there is no need for the control unit to handle
temperature returns to about 125 oC the switch is external analog signals referred to the power
automatically turned on again. GND, the best approach is to connect the
In short circuit conditions the protection reacts reference potential of the control unit to node [1]
with virtually no delay, the sensor being located in (see application circuit in fig. 4), which becomes
the region of the die where the heat is generated. the common signal GND for the whole control
board.
PROTECTING THE DEVICE AGAINST REVER-
In this way no shift of VIH, V IL and VSTAT takes
SE BATTERY
place and no negative voltage appears on the
The simplest way to protect the device against a
INPUT pin; this solution allows the use of a
continuous reverse battery voltage (-26V) is to
standard diode, with a breakdown voltage able to
insert a Schottky diode between pin 1 (GND) and
handle any ISO normalized negative pulses that
ground, as shown in the typical application circuit
occours in the automotive environment.
(fig. 3).

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 VN02N

TRUTH TABLE

INPUT OUTPUT DIAGNOSTIC

Normal Operation L L H
H H H
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H

Figure 1: Waveforms

Figure 2: Over Current Test Circuit

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VN02N

Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection

Figure 4: Typical Application Circuit With Separate Signal Ground

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 VN02N

RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage

RDS(on) vs Output Current Input voltages vs Junction Temperature

Output Current Derating Open Load vs Junction Temperature

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VN02N

Pentawatt (vertical) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152

L
E

L1
M1
A

M
D
C

D1

L2

L5 L3
G1
H3

Dia.
F
F1

L7
H2

L6 P010E

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 VN02N

Pentawatt (horizontal) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 14.2 15 0.559 0.590
L1 5.7 6.2 0244
L2 14.6 15.2 0.598
L3 3.5 4.1 0.137 0.161
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152

P010F

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VN02N

Pentawatt (In- Line) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L2 23.05 23.4 23.8 0.907 0.921 0.937
L3 25.3 25.65 26.1 0.996 1.010 1.028
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152

P010D

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 VN02N

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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