QUARTZ CRYSTAL DESIGN PARAMETERS
Series vs. Parallel: “Series” resonant crystals are intended for use in If pullability is a factor in design, collaboration with our engineers is
circuits which contain no reactive components in the oscillator feedback advisable; bandwidth can be controlled to some extent, during
loop. “Parallel” resonant crystals are intended for use in circuits which fabrication, by varying the crystal parameters. An approximation of the
contain reactive components (usually capacitors) in the oscillator pulling limits for standard crystals can be obtained from the following
feedback loop. Such circuits depend on the combination of the reactive formula:
components and the crystal to accomplish the phase shift necessary to C1
start and maintain oscillation at the specified frequency. Basic depictions ∆f= 0.5 f s
C O +C L
of two such circuits are shown below.
The exact limits also depend upon the Q of the crystal as well as
associated stray capacitances. Pullability can be approximately doubled
Series Parallel by modified crystal fabrication and by adding capacitance or inductance
R1 R1
external to the crystal. If the CO and C1 are known then the pulling in
ppm between two capacitances can be obtained using the following
0˚
IC formula.
180˚
C1 (CL2 - CL1) 10 6
ppm =
Y1 Y1 2 (C0 + CL2)(C0 +CL1)
CL1 CL2
e.g. C1 = 0.020 pF CL1 = 20 pF
C0 = 4.5 pF CL2 = 30 pF
Figure A) Depictions of Series and Parallel Resonant Circuits .02(30 – 20)106
ppm = = 118.3082 ppm
2(4.5 + 30) (4.5 + 20)
Load Capacitance: This refers to capacitance external to the crystal, To obtain AVERAGE pulling per pF about a known load capacitance use
contained within the feedback loop of the oscillator circuit. If the the following formula.
application requires a “parallel” resonant crystal, the value of load C1 x 106
capacitance must be specified. If the application requires a “series” ppm =
2(C0 + CL) 2
resonant crystal, load capacitance is not a factor and need not be
specified. Load capacitance is the amount of capacitance measured or e.g. Using figures as above and 30 pF CL
computed across the crystal terminals on the PCB.
.02 x 106
ppm/pF = = 8.4016 ppm/pF average.
Frequency Tolerance: Frequency tolerance refers to the allowable 2(4.5 + 30) 2
deviation from nominal, in parts per million (PPM), at a specific
temperature, usually +25˚C. Equivalent Circuit: The equivalent circuit, shown in Figure B is an
electrical depiction of the quartz crystal unit when operating at a
Frequency Stability: Frequency stability refers to the allowable frequency of natural resonance. The CO, or shunt capacitance, represents
deviation, in parts per million (PPM), over a specified temperature range. the capacitance of the crystal electrodes plus the capacitance of the holder
Deviation is referenced to the measured frequency at +25˚C. and leads. R1, C1, and L1 compose the “motional arm” of the crystal and
are referred to as the motional parameters. The motional inductance (L1),
Aging: Aging refers to the cumulative change in frequency experienced represents the vibrating mass of the crystal unit. The motional
by a crystal unit over time. The rate of frequency change is fastest during capacitance (C1), represents the elasticity of the quartz and the resistance
the first 45 days of operation. The most common factors affecting aging (R1), represents bulk losses occurring within the quartz.
include drive level, internal contamination, crystal surface change,
ambient temperature, wire fatigue and frictional wear. All these problems
can be minimized by proper circuit design which allows for low
operating temperatures, minimum drive levels and static pre-aging. C1 L1
R1
C0
Pullability: Pullability refers to the change in frequency of a crystal
unit, either from the natural resonant frequency (Fr) to a load resonant
frequency (FL), or from one load resonant frequency to another. See Figure B) Equivalent Circuit
Figure C. The amount of pullability exhibited by a given crystal unit at a
given value of load capacitance is a function of the shunt capacitance (CO)
and the motional capacitance (C1) of the crystal unit.
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QUARTZ CRYSTAL DESIGN PARAMETERS
700
600 DELTA FREQUENCY vs LOAD CAPACITANCE
Shape of curve will be constant regardless of values or overtones
DELTA FREQUENCY IN PPM
(Values are for reference only)
500
400
300
200
100
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
LOAD CAPACITANCE IN PICO FARADS (pF)
Figure C) Pullability Curve
Impedance/Reactance Curve: A crystal has two frequencies of zero steeper the slope of the reactance. Changes in the reactance of external
phase, as illustrated in Figure D. The first, or lower of the two, is the circuit components have less effect (less “pullability”) on a high “Q”
Series Resonant Frequency, denoted as (ƒs). At this point, the crystal crystal, therefore such a part is more stable.
appears resistive in the circuit, impedance is at a minimum and current
flow is maximum. As the frequency is increased beyond the point of
series resonance, the crystal appears inductive in the circuit. When the
reactances of the motional inductance and shunt capacitance cancel, the AREA OF
USUAL
crystal is at the Frequency of Anti-resonance, denoted as (ƒa). At this + PARALLEL
RESONANCE
point, impedance is maximized and current flow is minimized.
IMPEDANCE fL
Shock Characteristics: Although crystals are designed to handle ANTI-RESONANCE
normal shock in handling, shock impulses (such as half sine, square,
REACTANCE
fs fa
sawtooth and complex combinations) can occur in the field. Because
0
crystals are relatively delicate, they should be isolated from equipment to
SERIES
minimize shock damage. But, avoid overspecification, since the elastic RESONANCE f
f
properties of the materials and the degree of isolation afforded by the
equipment can decrease the destructive potential of a shock.
–
Quality Factor (Q): The “Q” value of a crystal unit is a measure of the 1
f
units relative quality, or efficiency of oscillation. The maximum attainable CoW
stability of a crystal unit is dependent on the “Q” value. In Figure D the
separation between the series and parallel frequencies is called the
bandwidth. The smaller the bandwidth, the higher the “Q” value, and the Figure D) Reactance vs. Frequency Curve
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QUARTZ CRYSTAL DESIGN PARAMETERS
Calculation of Load Capacitance: If the circuit configuration is as avoided by preheating the components and board, and following the
shown in Figure A for the parallel version, the load capacitance may be recommended soldering process time/temperature profiles noted above.
calculated by means of the following equation:
Note: It is important to check with your ECS factory representative before
CL1 * CL 2
CL= +Cstray subjecting any crystal components to extreme environmental conditions.
CL1+CL 2
C stray includes the pin to pin input and output capacitance of the Useful Crystal Equations:
microprocessor chip at the Crystal 1 and Crystal 2 pins, plus any parasitic
capacitances. As a rule of thumb, Cstray may be assumed to equal 5.0 pF. EQUATION LEGEND
Therefore, if CL1 = CL 2 = 5OpF, CL = 3OpF. 1
f s=(Series) frequency = ———– f = Nominal freq. in Hz
2π √ L1C1
Trim Sensitivity: Trim sensitivity is a measure of the incremental f L-f s = ∆f = C1
f s = Series resonant freq. in Hz
fractional frequency change for an incremental change in the value of the 2(C 0 +C L)
L 1 = Motional Inductance 1 f L = Anti-resonant freq. in Hz
load capacitance. Trim sensitivity (S) is expressed in terms of PPM/pF
4x 2 f s 2 C 1
and is calculated by the following equation:
L = Inductance into Henrys
C 1 = Motional capacitance = 2(C0 +C L)∆f
C1 * 1000000 C 1 = Motional capacit. in farads
S= 2π * f s* L 1
2 * Ct2 Q = Quality factor =
R1
C 0 = Static capacit. in farads
Where (Ct) is the sum of Co and CL. R 1 = Series resistance = 2π * f s* L 1
Q C L = Load capacit. in farads
Solder Reflow of Surface Mount Devices: Mounting of SMD C 0 = Shunt capacitance = C1 - CL
2* ∆f R 1 = Series resistance Ω
units is typically accomplished by means of solder reflow, as indicated in
C L = Load capacitance = C1 - C0
Figure E either by infrared heat or by vapor phase. The following graphs
2* ∆f Q = Quality factor
depicts the recommended times and temperatures for each of the two C 1* 10 6
P L = Pullability = P L = Pullability (ppm/pF)
methods: 2(C 0 +C L) 2
Infrared - Reflow Vapor Phase - Reflow
Field Vibration: There are two basic types of vibration, periodic and
within 10 sec. random. Typically, vibration in the field produces complex waves of
245°C 50 sec.
200 1 to
200 215°C motion which can affect the output of quartz crystals. Most failures due
Temperature (°C)
5°C/sec.
Temperature (°C)
1 to 5°C/sec.
1 to 1 to 5°C/sec. to vibration occur as a direct result of mechanically amplified resonances,
100 9°C/sec. 100
Preliminary
1 to 9°C/sec. as higher acceleration levels are reached by resonant areas, resulting in
Heating
0
60 sec. 200 sec.
0
20 to 100 sec. higher potential for damage. All factors influencing vibrations should be
Time Time thoroughly evaluated by using a prototype. Structural system, component
location, mounting and encapsulation should all be considered to
Figure E) Time Temperature Profiles
maximize stability. Remember that crystals are designed to withstand
Soldering Characteristics: A variety ot methods can be used to normal handling vibration; added ruggedizing may adversely affect
solder ECS products to P.C.B.s and substrates: desirable qualities such as stability tolerance or aging.
• Wave or Dual Wave
• Hot Air or Convection Flow
• Vapor Phase Reflow
• Infrared Reflow
• Bubble Solder Immersion
• Other (Laser, etc.)
SOLDERING SOLDERING
PRODUCT TEMP. T(C˚) TIME t(sec.)
HC-49, HC-49US, UM-1,5 240˚~250˚ 20 sec. max.
ECS-1x5, 2x6, 2x8, 3x10, 31 all SMD Devices 230˚ 10 sec. max.
All Clock Oscillators 240˚~250˚ 20 sec. max.
Due to the natural characteristics of material, some of our products
cannot withstand heat shock. Extreme temperatures can cause tin (Sn)
plating from the inside of the enclosure to reach its melting point,
depositing solder on the quartz element. This can cause the component to
oscillate at a lower frequency or fail completely. In other cases, solder
contact can degrade, resulting in an open circuit. These problems can be
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TECHNICAL REFERENCE 80 TECHNICAL REFERENCE