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Semiconductor Basics Tutorial

This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

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Bimugdha Biswas
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© Attribution Non-Commercial (BY-NC)
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Download as PDF, TXT or read online on Scribd
219 views13 pages

Semiconductor Basics Tutorial

This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

Uploaded by

Bimugdha Biswas
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EE143 S06

Semiconductor Tutorial

EE143 Semiconductor Tutorial


-Electrons and Holes - Dopants in Semiconductors - Electron Energy Band Diagram - Mobility - Resistivity and Sheet Resistance

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

Why bother knowing Electrons and Holes ?


Microfabrication controls dopant concentration distribution ND(x) and NA(x)

Electron Concentration n(x) Hole Concentration p(x)

Electric Field Carrier Mobility Fermi level Ef (x) E(x) Effect

Electrical resistivity Sheet Resistance


Professor N Cheung, U.C. Berkeley

PN Diode Characteristics MOS Capacitor MOS Transistor


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EE143 S06

Semiconductor Tutorial

Electron Potential Energy

Conduction Band and Valence Band


Available states at discreet energy levels Available states as continuous energy levels inside energy bands

Isolated atoms
Professor N Cheung, U.C. Berkeley

Atoms in a solid
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EE143 S06

Semiconductor Tutorial

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

The Simplified Electron Energy Band Diagram

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

Density of States at Conduction Band: The Greek Theater Analogy Note that the number of available seats at same potential energy increases with higher electron energy

Energy Gap (no available seats)

Electron Energy

Plan View of the amphitheatre at Epidarus

Amphitheatre at Epidarus, Greece. Built c350 BC.

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

Concept of a hole An unoccupied electronic state in the valence band is called a hole

Conduction Band

Valence Band

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

Electron and Hole Concentrations for homogeneous semiconductor at thermal equilibrium

n: electron concentration (cm-3) p : hole concentration (cm-3) ND: donor concentration (cm-3) NA: acceptor concentration (cm-3) 1) Charge neutrality condition: 2) Law of Mass Action :

Assume completely ionized to form ND+ and NAND + p = NA + n n p = ni2

Note: Carrier concentrations depend on NET dopant concentration (ND - NA) !

Professor N Cheung, U.C. Berkeley

EE143 S06

Semiconductor Tutorial

How to find n, p when Na and Nd are known n- p = Nd - Na (1) pn = ni2 (2) (i) If Nd -Na > 10 ni : n Nd -Na (ii) If Na - Nd > 10 ni : p Na- Nd

Professor N Cheung, U.C. Berkeley

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EE143 S06

Carrier Mobility
|v|=E

Semiconductor Tutorial

Mobile charge-carrier drift velocity v is proportional to applied E-field:

n
Mobility depends on (ND + NA) !

(Unit: cm2/Vs)

Professor N Cheung, U.C. Berkeley

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EE143 S06

Semiconductor Tutorial

Electrical Resistance of Layout Patterns (Unit of RS: ohms/square) W = 1m Metal contact Top View 1m

R = Rs

L=1m

R = Rs

1m

R 2.6Rs R = 3Rs R = Rs/2


Professor N Cheung, U.C. Berkeley

R = 2Rs
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EE143 S06

Semiconductor Tutorial

Resistance of Arbitrary Layout Patterns


Resistor Paper Pattern IC Resistor Pattern

You know RS resistor of of a microfabricated layer by 4-point probe method. Will this layout pattern give the desired R value ?
microns centimeters magnified

Before you do the layout and fabricate the structure which is expensive and time consuming. Cut out a similar pattern on a resistor paper with a known RS paper Measure Rpaper experimentally across the two terminals

You can deduce


Professor N Cheung, U.C. Berkeley

RIC resistor = Rpaper

RSresistor RSpaper
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