SQ2309ES

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Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
Definition
VDS (V) - 60
• TrenchFET® Power MOSFET
RDS(on) () at VGS = - 10 V 0.335
• AEC-Q101 Qualifiedc
RDS(on) () at VGS = - 4.5 V 0.500
• 100 % Rg and UIS Tested
ID (A) - 1.7
• Compliant to RoHS Directive 2002/95/EC
Configuration Single

TO-236 S
(SOT-23)

G 1
G
3 D

S 2

Top View
D
SQ2309ES*
* Marking Code:8Pxxx
P-Channel MOSFET

ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and Halogen-free SQ2309ES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 1.7
Continuous Drain Current ID
TC = 125 °C -1
Continuous Source Current (Diode Conduction) IS - 2.6 A
Pulsed Drain Currenta IDM - 6.8
Single Pulse Avalanche Current IAS - 15
L = 0.1 mH
Single Pulse Avalanche Energy EAS 11 mJ
TC = 25 °C 2
Maximum Power Dissipationa PD W
TC = 125 °C 0.6
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountb RthJA 166
°C/W
Junction-to-Foot (Drain) RthJF 73
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.

S11-2111-Rev. B, 07-Nov-11 1 Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 60 - -
V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = - 60 V - - -1
Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 μA
VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150
On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V -5 - - A
VGS = - 10 V ID = - 1.25 A - 0.268 0.335
VGS = - 10 V ID = - 1.25 A, TJ = 125 °C - - 0.567
Drain-Source On-State Resistancea RDS(on) 
VGS = - 10 V ID = - 1.25 A, TJ = 175 °C - - 0.704
VGS = - 4.5 V ID = - 1 A - 0.370 0.500
Forward Transconductanceb gfs VDS = - 5 V, ID = - 1 A - 1.8 - S
Dynamicb
Input Capacitance Ciss - 211 265
Output Capacitance Coss VGS = 0 V VDS = - 25 V, f = 1 MHz - 30 40 pF
Reverse Transfer Capacitance Crss - 21 30
Total Gate Chargec Qg - 5.5 8.5
Gate-Source Chargec Qgs VGS = - 10 V VDS = - 30 V, ID = - 1 A - 0.8 - nC
Gate-Drain Chargec Qgd - 1.3 -
Gate Resistance Rg f = 1 MHz 4.95 9.88 14.80 
Turn-On Delay Timec td(on) - 5 8
Rise Timec tr VDD = - 30 V, RL = 30  - 9 14
ns
Turn-Off Delay Timec td(off) ID  - 3 A, VGEN = - 10 V, Rg = 1  - 12 18
Fall Timec tf - 9 14
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - - 6.8 A
Forward Voltage VSD IF = - 1.5 A, VGS = 0 V - - 0.85 - 1.2 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S11-2111-Rev. B, 07-Nov-11 2 Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

8 8.0

6 VGS = 10 V thru 5 V 6.4

ID - Drain Current (A)

ID - Drain Current (A)

5 4.8

3 3.2 TC = 25 °C
VGS = 4 V

2 1.6
TC = 125 °C
VGS = 3 V TC = - 55 °C
0 0.0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

5 1.0

4 0.8
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)

TC = - 55 °C
VGS = 4.5 V
3 TC = 25 °C 0.6

2 TC = 125 °C 0.4

VGS = 10 V
1 0.2

0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 1.6 3.2 4.8 6.4 8.0
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

500 10

400 8 ID = 1 A
VGS - Gate-to-Source Voltage (V)

VDS = 30 V
C - Capacitance (pF)

300 6
Ciss

200 4

100 2
Coss

Crss
0 0
0 10 20 30 40 50 60 0 2 4 6 8
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S11-2111-Rev. B, 07-Nov-11 3 Document Number: 67024

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

2.5 100

ID = 1.25 A
RDS(on) - On-Resistance (Normalized)

2.1 10
VGS = 10 V
TJ = 150 °C

IS - Source Current (A)

1.7 1

VGS = 4.5 V
1.3 0.1
TJ = 25 °C

0.9 0.01

0.5 0.001
- 50 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

1.0 1.0

0.8 0.7
RDS(on) - On-Resistance (Ω)

ID = 250 μA
VGS(th) Variance (V)

0.6 TJ = 150 °C 0.4

ID = 5 mA
0.4 0.1

0.2 TJ = 25 °C - 0.2

0.0 - 0.5
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage Threshold Voltage

- 60

ID = 1 mA
VDS - Drain-to-Source Voltage (V)

- 64

- 68

- 72

- 76

- 80
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

S11-2111-Rev. B, 07-Nov-11 4 Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

100

IDM Limited
10

ID - Drain Current (A)

100 μs

1
1 ms
10 ms

0.1 100 ms
Limited by RDS(on)*
1s
TC = 25 °C BVDSS Limited
10 s, DC
Single Pulse
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1 PDM
0.1
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

S11-2111-Rev. B, 07-Nov-11 5 Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309ES
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
0.1
0.1

0.05

0.02

Single Pulse

0.01
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67024.

S11-2111-Rev. B, 07-Nov-11 6 Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Work-In-Progress
Ordering Information
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Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:

DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE

SQ2301ES SQ2301ES-T1-GE3 SQ2301ES-T1_GE3
SQ2303ES SQ2303ES-T1-GE3 SQ2303ES-T1_GE3
SQ2308CES SQ2308CES-T1-GE3 SQ2308CES-T1_GE3
SQ2309ES SQ2309ES-T1-GE3 SQ2309ES-T1_GE3
SQ2310ES SQ2310ES-T1-GE3 SQ2310ES-T1_GE3
SQ2315ES SQ2315ES-T1-GE3 SQ2315ES-T1_GE3
SQ2318AES SQ2318AES-T1-GE3 SQ2318AES-T1_GE3
SQ2319ADS - SQ2319ADS-T1_GE3
SQ2325ES SQ2325ES-T1-GE3 SQ2325ES-T1_GE3
SQ2337ES SQ2337ES-T1-GE3 SQ2337ES-T1_GE3
SQ2348ES SQ2348ES-T1-GE3 SQ2348ES-T1_GE3
SQ2351ES SQ2351ES-T1-GE3 SQ2351ES-T1_GE3
SQ2361AEES SQ2361AEES-T1-GE3 SQ2361AEES-T1_GE3
SQ2361ES - SQ2361ES-T1_GE3
SQ2362ES - SQ2362ES-T1_GE3
SQ2389ES - SQ2389ES-T1_GE3
SQ2398ES - SQ2398ES-T1_GE3

Note
a. Old ordering code is obsolete and no longer valid for new orders

Revision: 06-Jun-16 1 Document Number: 65844

For technical questions, contact: [email protected]
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 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 www.vishay.com

09-Jul-01 1
 AN807
Vishay Siliconix

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

Surface-mounted LITTLE FOOT power MOSFETs use integrated ambient air. This pattern uses all the available area underneath the
circuit and small-signal packages which have been been modified body for this purpose.
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same. 0.114
2.9

0.081
2.05
See Application Note 826, Recommended Minimum Pad
0.150
Patterns With Outline Drawing Access for Vishay Siliconix 3.8
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET 0.059
footprint . In converting this footprint to the pad set for a power 1.5

device, designers must make two connections: an electrical

connection and a thermal connection, to draw heat away from the
0.0394 0.037
package. 1.0 0.95

FIGURE 1. Footprint With Copper Spreading

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional Since surface-mounted packages are small, and reflow soldering
function of providing the thermal connection from the package to is the most common way in which these are affixed to the PC
the PC board. The total cross section of a copper trace connected board, “thermal” connections from the planar copper to the pads
to the drain may be adequate to carry the current required for the have not been used. Even if additional planar copper area is used,
application, but it may be inadequate thermally. Also, heat spreads there should be no problems in the soldering process. The actual
in a circular fashion from the heat source. In this case the drain pin solder connections are defined by the solder mask openings. By
is the heat source when looking at heat spread on the PC board. combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23 A final item to keep in mind is the width of the power traces. The
package. This pattern shows the starting point for utilizing the absolute minimum power trace width must be determined by the
board area available for the heat spreading copper. To create this amount of current it has to carry. For thermal reasons, this
pattern, a plane of copper overlies the drain pin and provides minimum width should be at least 0.020 inches. The use of wide
planar copper to draw heat from the drain lead and start the traces connected to the drain plane provides a low-impedance
process of spreading the heat so it can be dissipated into the path for heat to move away from the device.

Document Number: 70739 www.vishay.com

26-Nov-03 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 www.vishay.com

Revision: 21-Jan-08 25
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16 1 Document Number: 91000

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