BLF246

VHF power MOS transistor

Rev. 5 — 1 September 2015 Product data sheet

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Philips Semiconductors Product specification

VHF power MOS transistor BLF246

FEATURES PINNING - SOT121B

• High power gain PIN DESCRIPTION
• Low noise figure 1 drain
• Easy power control 2 source
• Good thermal stability 3 gate
• Withstands full load mismatch. 4 source

APPLICATIONS
• Large signal amplifier applications in the VHF frequency
range.

handbook, halfpage
1 4
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
d
flange. A marking code, showing gate-source voltage
g s
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.

2 3 MAM267
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and Fig.1 Simplified outline and symbol.
SNW-FQ-302B.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

f VDS PL Gp ηD
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW, class-B 108 28 80 ≥16 ≥55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

2003 Aug 05 2
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage − 65 V
VGS gate-source voltage − ±20 V
ID DC drain current − 13 A
Ptot total power dissipation Tamb ≤ 25 °C − 130 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

Rth j-mb thermal resistance from junction to mounting base 1.35 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W

MRA931 MGG104
50
handbook, halfpage
200
handbook, halfpage
ID Ptot
(A) (W)

10 150
(1) (2) (2)

100
(1)
1

50

10−1 0
1 10 VDS (V) 102 0 50 100 150
Th (°C)

(1) Current is this area may be limited by RDSon. (1) Continuous operation.
(2) Tmb = 25 °C. (2) Short-time operation during mismatch.

Fig.2 DC SOAR. Fig.3 Power derating curves.

2003 Aug 05 3
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 65 − − V
IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA
VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
∆VGS gate-source voltage difference of ID = 50 mA; VDS = 10 V − − 100 mV
matched pairs
gfs forward transconductance ID = 2.5 A or 5 A; VDS = 10 V 3 4.2 − S
RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω
IDSX on-state drain current VGS = 10 V; VDS = 10 V − 22 − A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 225 − pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 180 − pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF

VGS group indicator

LIMITS LIMITS
GROUP (V) GROUP (V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

2003 Aug 05 4
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

MGG105 MGG106
2 40
handbook, halfpage handbook, halfpage
T.C. ID
(mV/K) (A)

0 30

−2 20

−4 10

−6 0
10−2 10−1 1 10 0 5 10 15 20
ID (A)
VGS (V)

VDS = 10 V; valid for Th = 25 to 70 °C.

VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical Fig.5 Drain current as a function of gate-source
values. voltage; typical values.

MBD297 MRA930
400 800
handbook, halfpage
RDSon C
(Ω) (pF)

300 600
C os

200 400

C is
100 200

0 0
0 50 100 150 0 10 20 30 40
o
T j ( C) VDS (V)

VGS = 10 V; ID = 5 A.

VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical Fig.7 Input and output capacitance as functions
values. of drain-source voltage; typical values.

2003 Aug 05 5
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

MGG108
300
handbook, halfpage

Crs
(pF)

200

100

0
0 10 20 30 40
VDS (V)

VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

APPLICATION INFORMATION
RF performance in CW operation in a common source test circuit.
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 12 Ω unless otherwise specified.

f VDS ID PL Gp ηD
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-B 108 28 0.1 80 >16 >55
CW, class-B 108 28 0.1 80 typ. 18 typ. 65
CW, class-C 108 28 0(1) 80 typ. 15 typ. 72

Note
1. VGS = 0 (class-C).

Ruggedness in class-B operation

The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the
following conditions: VDS = 28 V; f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W at rated output power.

Noise figure
Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID = 2 A;
f = 108 MHz; RGS = 27 Ω; Th = 25 °C; Rth mb-h = 0.2 K/W; F = typ. 3 dB.

2003 Aug 05 6
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

MGG096 MGG095
20 100 150
handbook, halfpage
handbook, halfpage
Gp
PL

ηD (W)
Gp
(dB) ηD (%)
100

10 50

50

0 0 50
0 50 100 150 0 1 2 3 4 5
PL (W)
PIN (W)

Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω;
f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W. f = 108 MHz; Th = 25 °C; Rth mb-h = 0.2 K/W.

Fig.9 Power gain and efficiency as functions of Fig.10 Load power as a function of input power;
load power; typical values. typical values.

handbook, full pagewidth

C12 C13
DUT L4 L6 L8 C14
C10 C11 output
C1 L1 L2 L3 50Ω
input
50Ω C6 C7
C2 C3
L5
R1

C4 R3

VDS
L7
R2
C5 C8 C9
VG
MGG097

Fig.11 Test circuit for class-B operation at 108 MHz.

2003 Aug 05 7
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

List of components (see Figs 11 and 12).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C4, C5, C8, multilayer ceramic chip capacitor 100 nF 2222 852 47104
C14
C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003
C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
C10 multilayer ceramic chip capacitor; 68 pF + 39 pF
note 1 in parallel
C11 multilayer ceramic chip capacitor; 69 pF + 100 pF
note 1 in parallel
C12 multilayer ceramic chip capacitor; 2x 100 pF
note 1 in parallel
C13 multilayer ceramic chip capacitor; 62 pF
note 1
L1 5 turns enamelled 0.6 mm copper 52 nH length 6.5 mm
wire int. dia. 3 mm
leads 2 × 10 mm
L2 2 turns enamelled 0.6 mm copper 19 nH length 3.5 mm
wire int. dia. 3 mm
leads 2 × 7.5 mm
L3, L4 stripline; note 2 31 Ω length 13 mm
width 6 mm
L5 3 turns enamelled 1.6 mm copper 36 nH length 12 mm
wire int. dia. 6 mm
leads 2 × 5 mm
L6 hairpin of enamelled 1.6 mm 14 nH length 20 mm
copper wire
L7 grade 3B Ferroxcube HF choke 4312 020 36640
L8 3 turns enamelled 1.6 mm copper 52 nH length 8 mm
wire int. dia. 6 mm
leads 2 × 9 mm
R1 metal film resistor 2 × 24 Ω in
parallel, 0.4 W
R2 metal film resistor 100 kΩ, 0.4 W
R3 metal film resistor 10 Ω, 0.4 W

Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1.6 mm.

2003 Aug 05 8
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

handbook, full pagewidth 150

STRAP
RIVET

70

STRAP

L7

+VDS
R3 C8
R2 C5 C9
+ VG
C4
L5
R1 C12
C10 C11 C13
C1 L1 L6 L8 C14
L3 L4
L2

C2 C3 C6 C7

MGG098

Dimensions in mm.

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper
and lower sheets.

Fig.12 Component layout for 108 MHz class-B test circuit.

2003 Aug 05 9
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

MGG093 MGG094
5 6
handbook, halfpage handbook, halfpage
Zi ZL
(Ω) ri (Ω)
0
4
RL
xi
−5

2
XL
−10

−15 0
0 50 100 150 200 0 50 100 150 200
f (MHz) f (MHz)

Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω; Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω;
PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W. PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W.

Fig.13 Input impedance as a function of frequency Fig.14 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.

MGG092
40
handbook, halfpage
Gp
(dB)

30

20

10

0
0 50 100 150 200
f (MHz)

Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 Ω;

PL = 80 W; Th = 25 °C; Rth mb-h = 0.2 K/W.

Fig.15 Power gain as a function of frequency;

typical values.

2003 Aug 05 10
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

BLF246 scattering parameters

VDS = 28 V; ID = 50 mA; note 1

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 0.83 −91.4 23.64 124.0 0.05 34.6 0.79 −88.1
10 0.75 −125.6 13.95 103.2 0.05 14.4 0.69 −122.2
20 0.73 −147.1 7.17 84.8 0.06 −2.7 0.68 −143.6
30 0.75 −154.3 4.64 73.4 0.05 −12.7 0.70 −150.6
40 0.78 −157.9 3.30 64.6 0.05 −20.1 0.73 −154.2
50 0.80 −160.3 2.48 57.5 0.04 −25.9 0.77 −156.7
60 0.83 −162.2 1.94 51.4 0.04 −30.5 0.80 −158.9
70 0.86 −164.1 1.56 46.1 0.04 −34.1 0.83 −160.8
80 0.88 −165.8 1.27 41.4 0.03 −36.8 0.85 −162.7
90 0.89 −167.3 1.06 37.6 0.03 −38.6 0.87 −164.3
100 0.91 −168.6 0.89 34.2 0.02 −39.6 0.89 −165.9
125 0.93 −171.7 0.62 27.1 0.02 −37.1 0.92 −169.3
150 0.95 −174.2 0.45 22.3 0.01 −20.7 0.94 −172.1
175 0.96 −176.6 0.34 19.3 0.01 24.3 0.95 −174.6
200 0.97 −178.3 0.27 17.4 0.01 62.3 0.96 −176.7
250 0.98 178.3 0.18 16.1 0.02 81.9 0.97 179.7
300 0.98 175.4 0.13 19.5 0.03 85.4 0.98 176.8
350 0.98 172.6 0.10 24.8 0.04 86.0 0.98 174.1
400 0.98 170.3 0.09 33.5 0.05 85.6 0.98 171.6
450 0.98 167.9 0.08 41.5 0.06 85.3 0.98 169.2
500 0.98 165.6 0.08 49.6 0.06 83.9 0.98 166.9
600 0.98 161.1 0.09 61.3 0.08 81.9 0.98 162.5
700 0.98 156.7 0.10 66.5 0.10 79.6 0.98 158.0
800 0.97 152.0 0.12 69.1 0.12 78.2 0.97 153.7
900 0.97 147.0 0.14 69.5 0.13 76.0 0.97 149.3
1000 0.96 142.0 0.16 70.1 0.16 74.3 0.97 144.8

Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.

2003 Aug 05 11
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

BLF246 scattering parameters

VDS = 28 V; ID = 100 mA; note 1

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 0.81 −113.3 30.83 116.1 0.04 26.8 0.77 −111.3
10 0.77 −142.3 17.04 99.5 0.04 11.1 0.72 −140.7
20 0.76 −158.6 8.64 85.7 0.04 −0.8 0.71 −156.6
30 0.77 −163.5 5.67 77.3 0.04 −7.7 0.72 −161.5
40 0.79 −165.8 4.12 70.5 0.04 −12.7 0.74 −163.3
50 0.80 −167.2 3.18 64.6 0.03 −16.7 0.76 −164.5
60 0.82 −168.2 2.54 59.3 0.03 −19.9 0.78 −165.4
70 0.84 −169.2 2.08 54.5 0.03 −22.4 0.80 −166.3
80 0.85 −170.0 1.74 50.4 0.03 −24.0 0.82 −167.1
90 0.87 −170.9 1.48 46.6 0.02 −24.9 0.84 −168.0
100 0.88 −171.8 1.27 43.0 0.02 −25.1 0.86 −169.0
125 0.90 −173.9 0.90 35.4 0.02 −20.6 0.89 −171.3
150 0.92 −175.9 0.67 29.8 0.01 −5.0 0.91 −173.3
175 0.94 −177.8 0.51 26.0 0.01 24.7 0.93 −175.2
200 0.95 −179.6 0.41 22.7 0.01 52.6 0.94 −177.1
250 0.96 177.3 0.27 18.6 0.02 76.2 0.96 179.7
300 0.97 174.4 0.20 17.8 0.03 82.2 0.97 176.9
350 0.97 171.7 0.15 19.4 0.03 84.2 0.97 174.3
400 0.97 169.2 0.13 23.4 0.04 84.3 0.98 171.9
450 0.97 166.7 0.11 28.4 0.05 84.6 0.98 169.6
500 0.97 164.3 0.10 34.9 0.06 83.3 0.98 167.4
600 0.97 159.5 0.09 46.8 0.07 81.6 0.98 163.1
700 0.96 154.5 0.10 55.1 0.09 79.5 0.98 158.8
800 0.96 149.3 0.11 61.0 0.10 78.8 0.98 154.5
900 0.95 143.6 0.12 63.0 0.11 76.3 0.97 150.0
1000 0.92 136.3 0.12 67.1 0.12 78.0 0.97 145.2

Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.

2003 Aug 05 12
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D1
q C
U1 B

H c
b

w2 M C M
4 3
α
A

p U2 U3

w1 M A M B M

1 2

0 5 10 mm

scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 F H p Q q U1 U2 U3 w1 w2 α

7.27 5.82 0.16 12.86 12.83 2.67 28.45 3.30 4.45 24.90 6.48 12.32
mm 18.42 0.25 0.51
6.17 5.56 0.10 12.59 12.57 2.41 25.52 3.05 3.91 24.63 6.22 12.06
45°
0.286 0.229 0.006 0.506 0.505 0.105 1.120 0.130 0.175 0.98 0.255 0.485
inches 0.725 0.01 0.02
0.243 0.219 0.004 0.496 0.495 0.095 1.005 0.120 0.154 0.97 0.245 0.475

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT121B 99-03-29

2003 Aug 05 13
Philips Semiconductors Product specification

VHF power MOS transistor BLF246

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information  Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Aug 05 14
Philips Semiconductors – a worldwide company

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Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Aug 05 Document order number: 9397 750 11597