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2SC2837

This document provides product specifications for the 2SC2837 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pin layout, absolute maximum ratings, electrical characteristics like breakdown voltage and gain, switching times, and the package outline dimensions. The 2SC2837 is intended for audio and general purpose applications requiring power transistors.

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Tjatur Sadono
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41 views4 pages

2SC2837

This document provides product specifications for the 2SC2837 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pin layout, absolute maximum ratings, electrical characteristics like breakdown voltage and gain, switching times, and the package outline dimensions. The 2SC2837 is intended for audio and general purpose applications requiring power transistors.

Uploaded by

Tjatur Sadono
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2837

DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1186

APPLICATIONS
·For audio and general purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 10 A

IB Base current 2 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2837

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V

ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA

hFE DC current gain IC=3A ; VCE=4V 50

fT Transition frequency IE=-1A ; VCE=12V 70 MHz

COB Collector output capacitance f=1MHz;VCB=80V 60 pF

Switching times

ton Turn-on time 0.2 µs

IC=5A
ts Storage time IB1=-IB2=0.5A 1.4 µs
VCC=60V, RL=12B

tf Fall time 0.35 µs

hFE Classifications

O P Y

50-100 70-140 90-180

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2837

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2837

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