Co1 -Aseiqpment P.
Nthita
22j0o40033
nel Length modaltion
n the Case or inversion code,ue SYVTH
Cox VDS> Vsat the channel length L, fectlvely
ehonges by aa Value AL.
TÁe Tegion of the channel, aL is deplated and'ths u
bLLLL the vo ttagt t the end of the channe l
Lbe corctant (Vcat).fes al Vbe ueat
ALNL, The vottag dpppcd acODs-the channeVeat)
vars with VDS due to laoge modulatone inhe
dlectie féeld acoss the
Vbc-Vs at
Vhsat Vp
N AL
VGs<0’aCeurnulation
ALNL ocvGse VrH Depletin
Vnctt
VosA0 (sgtly qrter)
Vbc>)Dmore at)
I-Vps Cuyes for Vaous Vas
Nysevr (depletin)
VDcat
foal draln cwrt e9sus -the doain to &ource voltnge
N-Nos
cn enhanement type of
(3) ot M
Second onder effecta of
modutatioo
i) channel Length
) vetocity saturalieo
degndatioo
e) No bibty
eftect,
t) Tbreehol4 voltage- body
v) sub thrchold voltage
u) Drain puneh thugh
-Hot eleetronr
vi) rpact lnigatig
1y channet lengt modulatioo .
length of the channel changes with changig
the dr
-’As Vnc in oreas e, t causes the
Janctio to
edueo he lengt of th channel achich impac
reduces
The egn
modet cODeht en must be modifled to
A chanrnel length
The
etet f channel tength mDdulatisn beeonemore
for Smalley featne Gizes.
ontuced
,wohin a kigh impetene
hs, ohen a uront cource io Tequlred,
inerats because
) Valoetty atunalion:
velotytncases oith tncasng slectrie f tda
VepE
4Hgh electrie faldi (vo:), cansen nokk egrad
tVentuatty lending to a eonstard velocitctne fie n reach
’Houweves once the ctca ater ale
any funy
veleeit ol te caaeTs dos not increasg
due to an incoeASe te of colion and eares Scatterns
5e curent dos hot inTeie at the at the eypected at
Eather,the cwTnt inceses Vey
Mos deiees
’Oioing to thelr very chort channels odem
Csperiane velociby entatioo ven with drain- 80uree volt
es law as .
vda catuoro
Goerrte, slectsefalG
CE)
VÀ drift veloiy
beticas elect
ufe Va for large detces chanel.
’With incratng Gcyetuen electefelda iheane
-ATRls inereases the nse in noof Cavde colleena
wksch degnds camin mobility
aurrnt flosing thg the tranietor ep
heidea mode.
decreas
atsbtkty dcn th incasi tnperaure .
transfe
charactenciey
Denatio
thransfe
eharacteeties dueto
Vas
Aqpndatis
I the Sounte teminal mee to a tve Voltnge uile the
Substha w at eythen -the cource - kibetrate junlton
TENains Rvest- bìascd and the deie cHU
opermtu prpolt
P- substat e Ve
usthe Source -Sub etrtt pcbenbal alitfeore deposli
Thmshcld vottnqt ol te devce
pantlctlan asth GouTce becomes move fve ubtat
cubthreehold woltoge!
sutsthsses hodd vo ltnqe nfers to the conducis of CUment
in NocHT Ohen et e beloo theshold voltge. Tn thle
Tgon,the drain cuvent T, incTeas
when Vacc Ahthe Cuo Tent mt drope of yponntaly yothery
becoming Be7hie te calle ubthres holy
than
voltage
I
Smoo%trmiton
prrmCutefto
Vas
)brain punch -through.
yThe Drain volbnge NAc cveats an eleetme feldsthat aftet
te teshold voltae.
’It OCeus whery the
meet endes the influenee af the applied danh otnge
The electne feld created by the dran voltge is ctmg
the dep ten rgionstb ertend s, eventualy
erough to Cause the
mung, fteehinly thoterning the channel length
Dpact Tonigatio Hot eleetros
hot
eleetns. and impaet tonlzain Can lhad -to
chift of troehold
1S8ue,
5) Lefer &2.
)I, Vs
drain e. qete BouTee
voltage
NMOL -2V
VG>o
V
n-chan enhahcenent
n-channet
node deplefion
mate.
stek CNOS Nop
dioqom uwith colortodde
for C) operato forlt)opcot
PHOS- paralle Pmossenes
sules qroph un)
PUN
Suuler groyh (rb)
PBN
zete
tules
-ut
-A
NOR
ACr an n- channel device oith lt5 Source and ebctt
qroundee (te, v Vge ov)
for any value of Vae operatien olta
when Vace D accmulatio),the Gpurce to doain path
consista f tuo Alack to blact diod es
0ne af these oiode s
alny biaed
4he traln votage poli
electon s, heles mabng
mating the
the channel
chann hlghy seste.
-type Sulbetoate
ouTce Drain
harnel
kody
rte
channe
ntype Gubctt
PMOS
i)tceumulatio Eepon (Vaso)
The engy kunds bend p d hear the B
-the corteti L.
and femi level moves closey t
The acemulated leetons Creete an inveosion laes
doonad near the Euoface due to the deplitis of ovie
Zn
netaljoide oLide
-Accmtalu deplitis
1! Drau the schenmale diagpron af the giren
brmlean loe
boN (atg) c+ (o)
sules.
bulex qrayh for
PDN
t||B) 22D2Eout cAct diagoy
|A 3 B 3 cbtD4 E
CNOS nvte U a dertee i.e wed t
c'rcuiti.
The voOTk0ngf CN0s iventer in the Same a othe
PTS
whthe boyo
Co input vo ltrge gvon
von ttoo -the
CNOS nerte
hen HAe CNOs thanststor ie Suoitchd on oherreas the NOs
tacnis-to wois switeh off by lowng the foo ef eletn
keugh-the gat tmihat qunmtig igb looje outut
vettnge -to the cos inverto
When the
ohereay the
hnthe pyos -tranistr le Soitchet off
JNOS toanistn iU be Sotched on
nttaining the ontt oltnge genering
ehasactencis ef
poscen consuyp
Notee magin
-times
3.
Conplematany operatin
n ashetdk asacts shich oater the over
hayer oxltaio
pces:
proces.
tn
idatiro 12'
rgin of
qate ":-femat eht
polyaicen. t kes Depsi lo
aed. chloe hydo uing of
Sio, Lemova 9:
solvant chemca
Lger hetrrst of
wohele Eemeval 1-
hear
ticuntapose4 :temevnd
of sly
polgmeiged
sdst
Fhotort
Substile photomist
T5e
expredt
Uv no i Mastin 4:
a aswsed Hencil
ts -
the over Mask
enulion Sensitire photo aoffiln
theprocen thie Th
coat
ed lsteT In
woth
a Grouoing &!ttep
stetphetore
: ef
ehamber an tn
t oidatin
Subetrat
o loooc
and ytigguaty to wpoingthe
rcen tdatio
cted sele ibctte
is Con k
falietig for base oubtoatea eheesea tep-1
CNOSfabnetin
poct -well wing (D
clepts egiens
a
denloped for the fonmation ef te vminalh of wNOS
diffutin sint las to ntype diffaelon for
the temihah of
orming the PMOS.
lying f thick fett oatde
eleplk:-
Hetnllizalin af It le yoed for fo rmalig of mttl
eler 11:
intesconnectiog:
teomnals olich Can provide
18: Kemneval
vn of metal
of eKceCS
temnals
elep 19 fomatien of
20. Ashgning the -lemina names .
ceTtina vew ef n -channe MoseET at
(13) CrDSs
diffrnt mods of oprratro.
Aeeumulaon
nt
Gubctate
beplztiro
Pype Substat
Tovevsion! -
Vos
nt t
Pty shdctrt
Vpc increases feoten th of
nchanney
P-type ubstte
prestien by applging eapact ton analo%
.nseET at differert mode of operatio
Ceteff ode:
fo cutof mode,-he NOSPET ts off and there is no
nt flow b/w the tein and owce So Id -o
Curent at th un ear lo) tiode
brft time td.
prift veloaty VA: ny
An te eleetm mobi, y
Zps Uh Coz VGs- Vr) Vbs
kChe Cor LwVqs-VrH
VDS
Los nCoz
Baturatio Leyim
h
wshen Vbs inceay es the te deplitn regjon tnlages
-the movestouad the Source.
t5rsholy voltag
The thrshol voltage, often denotd a Nt 's a
Crtiat parametes that detemhs the onct of Nbe
ConductinIt repscnt the got voltrg at ws
the OsftT jwst begins to eornduet tor) turn bn. Vr.
-factors,
eharacteistios of -the
the MOS PET S be tecbnolo
bn the co0k
b it fabieatio.t depends
the mactea nolwed,-the oide theknen angthe ehana
dletibttion n the Bem condueton
Bhody Efet
bvdy fet alo tnown as the back gat fut
o) Gubstat effect fers to the change in threshol
Aue to te vaatog n the
the body Co) gubtyat of the MosFLT.
V 2w
Vbs(Vg-Vs)-VH Vys-y- Vov
2
Vps
Vov
ineay
TFe vadous proeess af CNos falieatio
t. N-e
2 P-We!
3- Tioin tube
Pwell
peces eKcLrt
he p-edl poces is imtlar to n-boel
that he ntypL Bubetoate b ed and
are lamed ot.
diuions
Lfer:2Q Co
Tuoin tube proc
Vaious teps invo lved in theL fabietion of cNes
Ming tuoin -tube method are as folouoc :
s wwed.
lotch in the chip
2.The vo) th measuored th
and evct dopart concentratieo e
oely.
T5e fomatiog of tubes for P ant N
4- Thin ode constnctio for aotectis from eontank
duing diffurim proceM.
C &ouute and dain ane
methods
c. Cuti an made for making pvtsm f metJ ame
Meinligtioo lo dne for rauing met ortat
(19) Noore's au ctates that cthe no-of tbuntstos ma
miero chip double ppaimte ly eveg yenoendig
to a Bgmifaant inereAsee in
is Comtatim per
deerearing the coct pe transto .
(o Totigrated eicit is an menbly of clectrant
whlch bundreds t nt lis trans stos
Compunenti
Capauts and itns ase intercooneeted ybui lt up o
a tin Subctrat of Seni conductey matesa to fom
tmall chi
Tc' can be elasifed as
| Sma ecale
3 Lase scale Integratioo
veny longe Scl Trteqraten
Le's can be clanfet type af ther eircuity'
gitd irtegrated ciycit
2. Monoithle Tle
