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Modified EDC Unit-1 Teaching Notes

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44 views50 pages

Modified EDC Unit-1 Teaching Notes

Uploaded by

Rachamalla Ganesh
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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e wie Serniconductoy priy.ics unl of Semiconductor physics : Review nd diagram: We gup. p) vepv Fremy Bond clo di agrin’ he ge 9 Vepvesentation GF energy bonds ino en ta iS talied ed bond diagram « : ¥ Energy bands: The proscence of widkly Seperate — levels as that ot {Solated atoms levels prosent Brerqy awnat closely spaced energy in acystal- branthe Energy bands, tye bands out 2. “behavior ane * of seers 1 gy valency bond 2, Conduction band : 3, forbidden banal JOP - Ost Tenportant to undeystard “the \. valency band. band: The energy bond Dev toi 2 conduction | wand ond valency | band - overlaps &ch other « from fing akove SeHaksial4, ONE can go fA ServicoN ductors ad¢.--the sortable qnattxials tothe estan of -actve Gevices ond, appued. in tne us -by. developing electron it is es | fee _—— k Generaty, Gernanive § Sion ase | serch eet _ SiNeon 8 ety MOH akordant, ig Ge and st axe Usvaly "Haken for Subject to | undeutend the conductivity: : Fe poe of alt Seenizonductor natotials , Sifter is the enogt “aloundant . material wich ois available in | a Cost: | ape node ~ fn On *eooromital Fron the desires port vifew , one Can define “we Brevgy: gap-[ore’dden oP between conduc tion band ‘ond: valeny. hand for si § Ge one “defied: axfonding &yations- eK jor v Sent fon ton be ey ritlen | n-tape ai ert ete) -4 er | ate Ne € pont law oe neutrality 5 x spew —O ins : ® mBo-te) =) Np * Neots “(ee-B8) nr > 2 Ne —herging ee yeth sides 109, bp Ee t kr Ne c => KT 10g, sey eer Apbyi | aa He ee (ee ; a nu i Er = Ey +kTMO4e (= | [erate 0. petype sernitaneerg 2 Feat le vel in pe ile Semiconductor is 7 wt holes (0 valency pra an Seni condve tors - From Hes (P-type Aste ibotto® tan be a. ou (Ev-fe) p> Nye FF a from OWA Meutrarrty » e=N» ~O @ inD> ey -Fe Ne = Nu e ET scr ¢ Gy-ke » OS E “a a 2 Nv pppey 9 on both sides 10h, BS n= Ev fe er NA ~ PYT WI, —— = Ev Ee >, cee a = ~ rtd SS) > fe = oa? 1 be ‘enange density %e 0 gers conductor Yass action tow) ss, ‘Urdier thermal squiltbsiory conditions, the Pordduct v& Concentration. of electrons and holes is constant and {$ independent. of “omnount of doping by the donan and acceptor impurities. Matthennatically » ‘ n%p = eT m= Te vane Po = corstent tx Temperate tn "k. Beg > Eo ROE OI C8 Je 5 Botemon constant = 138x7 Mrp i Nyy” ond hy x OF [BY mawaction (ow) 5 ; ' P-type semiconductor: : Pe Sp ana mp et : _ (BY nau action\aus) a ve H Hattebfect: (6 when any “Spectenen, caring ~ eect Ploted Ir +ronsveste- raugnetia Hrd and han a otkage. i = Ny iS Adueed INTHE “specie in “he divectiony Perpendicolay to boty “4” ond’ p! “TAIL phenoonewn. 1S caved or Hall 7 i a EP he conduc teity and conduction ¢ chang: h ae wsnetheoe the semitones P-type oY n-type ~ BAS a Finding the connie concentration 3 caiculating she: mobilty g conductivity APACations of Hal effect! 1TE PS applied ~By mag nent fretd metey hn Se waa sforhatie feck MVIDYPHe a Bilt ana difuson cumrenty © 0 Te concen yabosrok TRE coduch'an: at perio s ot Conductor moter, occvys due es? upes of -tronsportartions: ; Ve Drift cuvrent _ fe due to “the danger | 5 & | post utes and the ebhect of appied | eect) eld Ds Difjsion Cument Aue +0 the COME MOoVvemery Born tre reg109 of high charge derpity 0 the | tegtom of low cnovge density . : Toan'ft) * ny Unt Tptaritt) = PAPE = i. ond “Tn catfpusion) > WDn ae Tp (ht FFUAIGO =v MS 4 ve Sigs Indicates tthe cunent ” site 70 the, at0) Lorient. i, ty due a wt Stetattony) © Pa, Lpe — -arF esnsteins_walat welatO ile baie? pause ain 3 = + 23 rete « - Sb3KIO™ By, Up ore mobi ; _ . eiexio't roca vfe 42™e of a cower ( pa) ean life tine fs interpreted on’ tre. tine exten bythe Hole torcecombine v wit election ( Yp) Tinne 4aten by alec hore (tn): teh T4 Dyusion rength [dp Ato). TRE arstae teavel!ed. by the hole before 1 rednny bINING with electron (4p). | tron tore combing with the i ae Te ave(ae digance “travelled began leery} befve rerombinyy wrth Hee | dn) oe pe ly = Data Pe}oBers A Senniconductor bos whith IS Intrinsic Sidon have a cross Section of QUx IG /ns TRe electron “denwitylin) 5 x709 pent Hos iy tat boxbouch that current tn the ba Shen LITA and when Fv. fs appuedand HOt Alps Orly Mey akg, Given 9 = an ut ivese jis 00S WY v. y, © ERO ry n PUSH!) aS h seria oa. SEY ns Sours |v bec Mp = 0-0S my —see> | Whe? Pal - | for intrinss “Signs i : ‘ Soon n sp P51! Joo? a 2 ; NYA PY UI HSX1O!S ye x765/%/ = SUSU HS - 91192 XID? v 0-14 40105) ONES KI. wre Q= gid 6 te itt a i — gett eA Sar: ate eile > qeorunid | f 2 Rr lFr anento 1 ; rOWOE' 1 effec fuperinnent: used a g3lteon bar roesistvity of the ~OnD; syilih of the In na yg pnDWN to bE P~ type: the gerniconductoy #S aaneio? 2~ semfconductor & sxig 7 ; amines is aio! pmagnetic fied O+}.202b/ n> and the agus valier’ 7 halt voxoge hate Cunent de 8428. 28710 ots 3 rnp “catautate tarmostity, 43 py xox! a “pum ® Continuity gayuation | 7 ae Comider a imal. portion @the semiconductor ly ypuusne Sd 3 “Qedt XLax fv rar h THe Af Arential Payvatiory governing a concentration. of caries worth vespece to time and distance & cated a Continued Qpyavor and. st i's detved ford the Lect “chose any be nehher created nox destrojed @ntitved Fquction Clenivation : , - Consider oun infinitesinnay (very gmat) elornent of volume wrth wea 8 and length dX IND sernteorductor which !é havi “the, average NOIR concentration, ‘p 'per a3 | CP Jr) ax -ShRD ghove Wthe dva gear | oo : | yolusce | ptth fathe 5 volume s quen’ey : venpert xO GF Tp 2 i enean, vite trne of Ane holes, -then s 1 tne holes. pet $F! A: Maa lial per unit vouroe «. Because, of daectdennes nusnicen & colarres PH second ae ; 8 rune S given Lusty 79 the, above considered VO mg ade) by Porieadng eapation — “tnndy) eZ nov —® PP of eS 9. 5£°9/ is the anemeal torte. of generation “9m cthe tonsidé ved [see tneruadel Bowing ial ot role ~ F100. “ poar ” ‘men NTRT of coulomb coed 9) xy =e Gy" oth, enera,, she corkent vases, he “gitidice wxtnin the sernieornhuctor - eothé Feld i$ applied, for the Lernicon 45 cathe Correnh artery it above Bago” ane -soioene at YAS oy. and leaving. ot one o- . $0, ihe oO ose, within 3-In ade is © g+8” culos |see nok toners, deere 4g vousne, =i df 5), y. pue to “he face spree ‘effects atscou ets oboe , the whole cercity Barty pangs ome dime. ond dt 13 tne tory charge in. cthat volume cox Bene tox) total Gowent woth: ee vis: me By-ne a ng Spare \ 3 er ee ies Axdy: ¢ vy ay) |S-one can vas Same the above far Ava, Ne Oy bela - POOP GS . Lpar Pa) Ade 9 -ahg, at > ha cue “0 the belie t ie on Bdiving + €hyuation. . 3 1 Finies* PyapEA ~ amp 82 8 iprentne wt " ae & a St Pa 3) — $i oemgey aap -£-(88) - & Dp: = i Pe = pele spd apap ce fron Flt Pag tp sunstie® © © )soegets 28. HAwORS ~3.9° ‘00g " o)e eet ee Ge ap: Acre) 0m. gis? + Dp- owe - dt — etd: * dX : - 9) a fet Py 1S the. concentration of CosViers wren the Serrscommuctor ($107 sual ere conditions tren tne sayitorionn fondt tions » % ~ ap a a =O), bes aP :o. dt Des apg 2 On! Git 20 ponte AO oR Po = OF =e 4a +pID —Uplo) Tp | eoppatitir® © in "@ wwe get; ap = P44 Po a Dp ap ~Np- (PEL) dt P la dp — Po =P bad dy BP = Pon pp GP _ sip (PE ls ie A tage 2 ae tontinued equation ~Brconcenstraition of holes ina semi—conductors” feet 1 3 Aromlaaly , ome city desive the continurhy Sq ation, ~% The above continued ' &yuatiory ae useful ~€r “he Aemiconductor design - peoblony . g * | Dperr_citcuited p_N junction diode : P et ee & x20 + | EN. | 1 | \ | } | | he 1 74a. 4 | ; 1 Poisson's % uation The above YUPOMICS ane -By an open Circulled p-n junc tion + THe voxiation & chouge cenaty, evectrtc frend Fotennity, (ED and contact potentiq! voltage [ (Wo) Abarsues polenta! vonage with aeApect- tS AIStANCE « The barrier potential voltage Cannot be measured through voltmee which is formed at “the neighbour hood of the junction. | | | I } es iheensis rries catyep tataay: | band da: Tam af Open on [energy band diagram O° | | | ees junction déode ! > Tet O-N) junction diede. rp oY a 7 in @sO: . wo 9g : woe - Ets) lo ie eeeerer — a4e ‘ for) lec ~PQ Ee -Evp) = Fa Bonase — fo = Eqn (fen Ee) 7 lEe- Eup) O ior (eq = ETRE) O | xs Ee = = Ee x“ TUOYe (VS =) les in) abe Ey =e TWYe (NP ae | = Fy “ert SE") ~ -etto9 (52) => a = i griog (3B) -—-@ i [ | | | (ome => ~(€e-€v) = suortute 0,0, © in Fo tquation (F) 6, = ~ yTLOSe (See) AVTUO9, ERB) reertode (SE) ee tog, [ Ree we px) NA = KT | Lede ( a ep [ar ie = 2TO%e hwe wrod 1 Baasuers evel voltage (an be dened form Barrier potentiar Eneygy a a on Kr og, | Nan "To OY ny ip) = of =) Wb 2 Vy OG | mee nr {yor tou. Meutrauity ¢.ch ange Conn ers + Pow Na and QS Np RUDY Nig ee 6, ee > = Vy (092 ( Ab) we LNdw orn chevige ceniity ‘Of ferntcordoctoy, aa Oot OE | Hien, ADE, as . | Np 2 nn” ‘pee - 7 — Pe eee it ol) | => YO _ vw! ae Te Je Pro MEOH sty | = tp 6 : ~ 2g be oT =| Pmt | ‘ ienilasuy Sr electrons, J taev of junction To. Pin’ Junction Ade apy, | tthe #usard BEA) vottage( Vv)» ~~ , Pretattoo ble appuicl voi QC f nO: Cf no} lawe of functions ! crowing Pr qune tion! ity Considéey and Open civevited PxN yunation diode . onder “thee eqoll by, conditions , one Can vier State “Uhat | + Rs Ye Fs \ aah | ‘ Php x = Pro S vr re cahene . : we Pp, = cencemtration of holes defied w ne poten under thewral ee conadttiom - Pro = Concentraton sap pole deed in the A= wegi0n under xhemai euri'b yum. CONARHONS . . Wd comider P-V YoNcHor code —cu2/0L'eq with ~byuseed ap vortege: Vy. fran, Qn re apove dagen Pee) 48 inyected canrien concentration, At 20 > Frio) = Pato) +R “ fe lo) = filo)- P, | i wornea Saortege is appred ~oy a PP junction ddd _, ONE can ve oan dye cove | | | | | Ow «| pUND Gon aitions: e laws | ond A [a function is stating that “Pry TS catuoags constant th wlading ox athe junctfon + | votthovt or Ww | | Ponds» we Vor’ Vv Poo e.* ey = Sri € i Ne Pe Bw) free 3 | - |= nto) > Pro eer one can apply he lausey junctions sina! of the EAacorres | paths injected rsitews | Wheee rd | Nelo) = “> i¢aerier- ota! 7 iar kee increased. grec «Concentration al a. ‘ ‘ mi + Current connponents J pun jonctOon ode ; rae Yo t : 9 > Ten (o) eInP LOY 37 Te above grain shows the Curent Lents fa uration diode uoith | b6us0xd brat one ‘yl as Qyopued | alloasing, “he A upesing aidum phions Bre har mw Consider, ; VO. ss | nBepletion ~ FP egion. : : |. space vegion Rede Fs ae che g ayy 1 oN omen Qu Te doping of > ea lors 45 not See ae eg equal Nn 7 NP chee Fpl) => noaority drift. hole coment m P-Y2 9 TOK TPnlay —> eninority hole dF Fusion, eurent wm 9 ~xKegion: Gants — majority ayee «(cha ¥ cuvent iA nN-¥eg'on, Sapiyy —— eninovity, evectron diffusio coment to P—vegion . € vrode eg hy pesivation o vo. e@ ea (Quartative eNEorY of PM Jection diode Cowents), 4 (mo: tac id A a ~P,to) ‘ fo agen, : ~ Jat) Zhe thgye 3.0 towed writs continuity &% flo) > qajected Carden BNCEMLALOM of holes defined at the junction 120 Because 4 paward bros voltage ‘vy’ is eppled fox the diode. : lye con entation 18 Noaying Cov erar. | y ) Aeraying | PA pores tially of BR KE birces ond | yeache, to a comtont theryrnally generated Cowher sry W~ GION . Poo hesenaiiy Qenetated conics in fs egion: Pylo > TLA ND of Hole con ag = PO? 2 i) od | cy Ahytw p (me n pS nN ee ei ae i a) loge, grdteater the ota! diffusion cuwent Jahon * wR Nes croeing at the a. eonttued bythe hol ees Pe WO ene 8 thee het e © intl precon.ioalte aye electron dffsion cusstent condibuted boy he dit ® Flector © cxossing atthe’ function iu given bythe , poluauiy uation . a ve fad Npio? ln +s. aifpusbo length i Bh. : ii ag men 8 bare a ust fe Oo et a "Os i“Amto) ryuPp fn fe vt '| Fe oe ty I) 1M hy ta ; ae opto) 2 MP Me [7 - ~ ToS ~o(SHr) n fron Whe culent Component of a clinde + wx prow What, -tstal Consent af Junction | a T= Tppto) + Snplod AL - ~ HYDPP rn { er] ; AAPA MPa eet lp ln ~ Oise tag i oso, [err : : es wOHOe Ge > HaDp Pro _, PADnMPo Pee ‘P el To Veveme Acduvarion Guyvent laacies for Gercranium (Ge)to silicon $7) = Jy ts Nevenke fodtarection canent fos the cada When tine ctode applied ustth se vetle bios, vottage Vv. ~ eee poy Vid Larwered ii eel te ise | V2 Node Cayraent Kenpo LTB) Curtat Floumgy tte Diecilo : d f diode ten MOVELIE SOTO: sy a Net ocr cre | cBgars Warted with o boty, + 4G total CUPENE yovsing in the UTE Tf Bee | tire mageiute of the vores . ~ plume anak Ves sero? V-f characteristics : eee forDos, R NS Qiset cument depend only on kOmpaature 4 ¥ paren the clect: 19. SEpieg Wut) Temexde Blas) thy tat coment Catled reverse Sectorattan convene. Pos THANE closed circuit of “the diode and it 1s gy oder Of Mand-Arpered or Micro Awferes. Gov Germaniimn Jane reverse Saturation Covent \8 30 moieevernperes Zange Rr siiton, “the severse Saturation coment i£ in ane Nanompercs Range . gp the forward bias the coment _stosrts conduct exponentially after crossing HS sss voltage WY cuttin yetage | Break. - point vortage | offe set yotage | ‘Tweshoid vonage: Gk 18 defined asthe rnin vortage | applied -Br-the ode “at ter which diode sxants conducting and aftarinet HH takes NS Frponential Paths if eurting vohage [aag) fre geemanion 69 sine orden qo ov and ‘py silicon 1S 6-6 a oov i Diode Pe sistances : > pode. #3, having “tuo types gpresistances “TREY ane tJ; Static : 2, Dynamic 1+ SKOLIC vesistancer DM 1g dofinedas “he eatio ofvottage Yo~he oowent ~6r a fasttioulas panty Point of adfode. 5 7 a pa naa Rs Sar | Rigatys veHanve dont have priacttet Trnportance ov i cesiined oh cue pecause Hts Wosyfng . .. gene? -v Os 24 2 Dynamic resistance: gp is defined as he yatio a] Inaermental charge. a the vonage to the fnerementau change SN cowene 22M >f, 3 femp) vey Ra = * AEE *KDYMarnic yesistance having nS al Jenportance Nhe = Cea gpect patios : oe ied on SS (vor) of av ; cansider yc B Rectprecar oF dynamic q = VEL G YESSTANES FS _DYName doe “3. condictance: = mT+i, - & d[e*) ic & pANAAUctance- fecal oe Ga” FW, Gorn he above Foyvation » OMe Cun conclude a 7 , peelesceeeereel TI wnat Dynannic reustance e€ current feusing in crode forward b'04 , mic realstance | { Bin -the apamic cae ae is Very Loui ak we tnow the fPdasd cunent, 4 inthe Bider q Milli ANNPAES » repyNaric Tes! Nance “for the ~evexse bias is very bir and WE Know ~the 1e Verse eatuyation cunent is rn the order q MO Ov Nano WPEIEs: — ~ Gm AN Ideal P-N Junctiory silicon drode ‘taker atthe temperature of wQ0"C witty the vevese eaturating cuvrent of SoH -then find the dynornie resistance “Br the diode at ovt! Volts *n athe foruind bias and FM -the ve verse b'24, Ny Eee 120083 cts 1600 = ttebo * O° ae ret ng — DK 56 aa 4, Je Vooo Rae om 4° Fat wtt Me. \ us Arap 5 4139 MOH Nr Ta 6: 0338 2 W395 + 6.63 3x15 7 50.0332 “439-068 2B IGT Rd a3 oroaag cB ( Revexte bias) 2 0° 00819 it ap Gt FS an Ideas diode ie +, the feverte Saturation Cunert i$ T= ~Tp = Infinity ne)” ( Revers. | oA ee Hor Ge g=So(e 2) 4 Wet Bran the cunents: cunvent potion -br Ge and St’ gunent &y The dicde cument equator Con be Pxprened mats ious cuveents wucon, q g'Uidory mM 22; Small cuvents a a1 +, for aly curvents 4 Gemnaniurn + i gmetation of reverse Satorarior quent and Temperatore § tet Soy rg reverse Saturation curvent ot temp T ye veverse Satvratioy cunent ot “Rasp Gor is e Go, = Jorxd (Et 259 petation between Toy anda 7 TET is a=T) = Ke te} 4G >t Fox Every roreie tncrease tm tem peratove n a pen junctfoN yine yeverke Saturation . cunent gets clpublad’, hen Fo, = a5j -|The leavage current | Rev Sat current na Pw Junction “ak as% ?§ “assum. Find the, charge fn temp xeqrtred. to have a leakage Cuyvent of Unie. wT Tae Tor zJo ¥ 2 '* ~ TH =) YDXIO to wa => 25 KIO 4.29% >) Gag, 10 =e So) Log 6 = 7) -298 (53010 O20U) = T98 0+ 63010 eet > T, 298. = 6.48139 =) Ty = 300. 38) k 2 sl 7% Diode capacitances: Didde exhibits te typer apa inane, A) Transition capactance 8) Dihhusion A) lenportance whenthe dio | j | wENENSE biak- geis Naving tS OW 1S cLpptreduoit, | gp Di efusi 00 Co pachone : | Faaporance vonen s4ine. Aroae | ford bias. The p-N junction can be rnanifactore d Popularly by wo technurqyue * at, ANOY “type syechni que 2) Groen, type ech NIG is famed yn tre alloy Hep qratted “the jumction dhich. yeenniqque Be Ba Sars tS abvwpt junction ov $ jpsed junction | junction oF THe function eonich i$ jomed IA tne Gyvos8s aecrnique #5 cated I p-n junction or = diffused junctton, basen of Tranvkor capacitenees a consider an alloy peN Fnetion diy J ty applied uit the reverse bas. Os PS \ coo ‘ Tal Assume tak Lop? | ia Bee! Na co Np Pedi Ro >2 Hue, Ke net rastge is Feito bate pips Nat Ay = Np UY ebay ie [Ret = Rip>> in fer, uo suptlitn “[ tJ wp 22) =p SUP | Vgt Barriers potentia: Notas . “conpder passion’ uaton; | “Mee .4f 45 1 ede Ss | Bors above BiA9Kam ene Can aris | Rt aw = es 8 Me x2 OBS pt x20 4 Yo=o- ee OD: uchete € IS Chaerge jdenstey? seomity Eehfthed by rreonne change | ames, to thseGio0 oP Wp , Htne-totel charg, -_ earvieY io (NA) = Nn FY | (2 —ngit V ue —(-Ny XV) an” E ‘< Np KV e op boty tes, Tarfing clouble frntegra tion {ele | sv > Sexes | meee. NEY 1" i pr L=Hp + Vo =VB- Vp = NEMA ‘ 1Eé _ NBY op f ba ¢ Sap ene (* VR 2 Vo TY | eter eS op ae i ng0ed, COMBIEA solal chasige to width of UpSY » @ = (Axo) KY ¥MA ——>@ | arty above EQ, wt Vv oI. paged | ve Rey OF we | gohene Q > frea gf crvss section of Semicorete [ean neced actif: part ¥ < No (x05): deo | > Ox a ee | 3 Npyll lus = ! 2 en . aa s) dw € >) “AV = Nya 0 | sot in © | | at \ Re a "One can tempore above @ Lwtth-tive fle) plate _ Gpacitoy equation and conciude that atlode | applied with the teverse bias Pxhibits | TONBIEION capacttiance ~ wKich 'S analogs to | ‘the function of paratial plerte Capacttor. F Siffuaton. GPacteonee (ey). / Fe TS Aebined as tie vate of Chance of infected charge. pes Brvord voltage appa Tp - Cpe DR Poy ctenntuiha he pe \ at" For & pg, Ah PHN junction Atfode, we | ane auurriing she ACF for TL heauly doped. seve L we ae apuming , Pe vegion is heavily doped hen the tata charye due -ta Sucen Mo jected holes fora p- region to N- reGrom_ with ~noaw Bras vouage ‘v' is Ven py the folroving 9”. en @ = ARN fF Ag) e ax 4 0 a 5 r ~ a rn t 5 EQ yatole ) a ‘et 4 za | = Sais loi aur(e > | ~ -AYPr toe [e P] | Qs AY Ph Lo) Lp | ep = qe = Boy Lp + 4 (Pri d)) 0) NET Ab the CY eden | 2 = Matey+ Inplo) oben &) of « fio) ~ 2p tte eo Dredasguko D omen | 7 > i 9 - 5pn (co) + Sinp lo? , ’ 1 dia >? ar 4 = £2 Ien lo)» wonbie) Een ' ; “Tp (ps » a qe “ 4 of = a. & [Pniod) ) dfptel . UP. ah pas | eee epee > © sumrttate @ tn © wx get 4 > = palp# LE Eo > Cp = Gy dt Deore auis Cp = (2rFp)” at i Dp * ‘dv (te tps pip) gedt v j Pe ee 4 : ee j = > sq 2 oS | |p =% - { 4 a | Sinnilaaly , a7 Recorabinaton tine Ba the holes In “he Found plased PAT, ore con observe “the diffusion Capacitance (¢p) 9d sm-ne, severSe prased drod?, one Con ObLoaw the Tramition capaciance (7). #- prep Ge diode 7s appifed wnh “re mevexie bras sit 1S Observed -that the woidth of |the Cepietton *egfon #8 X16 Ueno anwrnn it is applied wWhh the ~Pyunid bios, the current of um obSered at Yoorm ~ternprature Ten, find the doce capactiances he ~hrunad b'as ord in stom the reverse bros. wo = UAID pyen = a aN Gi ~A=40 OW & uonrio /™* its ano rot € = 3-85¥ 10 Flay ‘\p 5 aR Uno? see Th, nexia ee ay = ~12 cy ete oh vse we wxio © < 19x to F Ond ts (te +%,)5/ur vee LA Nie a, pee PO) 2 Vb tNO / | “G00 160% > a 2," eee »*® Lp (unio A KAID ) se = WeKIB? 2. 1H 44 —— 16 a po lsanin F ¥ Applicators pn) Je Ncton dod diode + 4 used 04 on electryny bfor eusitehing dareenk- ar ae ies 5.5% Con. be used os a cect elernerh. eh srolf pave seckifon, Fyiluave aecsiter. ed ay clIppIn"” Cree ct and 1p—19 juncton diode ? op it can 0% us! | aun ob adorn TAth? comenunicoson ous pase oe ts pIng Cerone us eused os dem odulating cleenent:

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