Scribd
Upload
21 views8 pages

Temperature Dependence of Resistivity

The document discusses the temperature dependence of resistivity in ideal pure metals. It states that: 1) The resistivity (ρT) of pure metals increases linearly with temperature due to scattering of conduction electrons by thermal vibrations of metal ions. 2) The mean free time (τ) between scattering events is inversely proportional to the amplitude (a) of atomic vibrations. 3) The amplitude of vibrations is proportional to the square root of the temperature based on the kinetic theory of matter. Therefore, the resistivity of a pure metal increases linearly with temperature due to lattice scattering of conduction electrons.

Uploaded by

kambojnaman2005
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Topics covered

  • impurity scattering,
  • electronic materials,
  • mean speed,
  • electron mobility,
  • electric field,
  • material properties,
  • mean free path,
  • copper conductivity,
  • vibrating atoms,
  • web resources
21 views8 pages

Temperature Dependence of Resistivity

The document discusses the temperature dependence of resistivity in ideal pure metals. It states that: 1) The resistivity (ρT) of pure metals increases linearly with temperature due to scattering of conduction electrons by thermal vibrations of metal ions. 2) The mean free time (τ) between scattering events is inversely proportional to the amplitude (a) of atomic vibrations. 3) The amplitude of vibrations is proportional to the square root of the temperature based on the kinetic theory of matter. Therefore, the resistivity of a pure metal increases linearly with temperature due to lattice scattering of conduction electrons.

Uploaded by

kambojnaman2005
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Topics covered

  • impurity scattering,
  • electronic materials,
  • mean speed,
  • electron mobility,
  • electric field,
  • material properties,
  • mean free path,
  • copper conductivity,
  • vibrating atoms,
  • web resources

BECE201L

Electronic Materials & Devices

Dr Arivarasi
TEMPERATURE DEPENDENCE OF RESISTIVITY: IDEAL PURE METALS

• When the conduction electrons are only scattered by thermal vibrations of the metal
ions, then τ in the mobility expression μd = eτ / me refers to the mean time between
scattering events by this process.

• The resulting conductivity and resistivity are denoted by σT and ρT, where the
subscript T represents “thermal vibration scattering.”

• To find the temperature dependence of σ, we first consider the temperature


dependence of the mean free time τ, since this determines the drift mobility
• An electron moving with a mean speed u is scattered when its path crosses the cross-
sectional area S of a scattering center
• The scattering center may be a vibrating atom, impurity, vacancy, or some other
crystal defect
• Since τ is the mean time taken for one scattering process, the mean free path ℓ of
the electron between scattering processes is uτ. If Ns is the concentration of
scattering centers, then in the volume S ℓ, there is one scattering center, that is,
(Suτ)Ns = 1. Thus, the mean free time is given by
• Because the atomic vibrations are random, the atom covers a cross-sectional area π a2,
where a is the amplitude of the vibrations
• If the electron’s path crosses π a2, it gets scattered. Therefore, the mean time between
scattering events τ is inversely proportional to the area πa2 that scatters the electron, that
is, τ ∝ 1 /πa2.
• The thermal vibrations of the atom can be considered to be simple harmonic
motion, much the same way as that of a mass M attached to a spring
• The average kinetic energy of the oscillations is ¼ M a2ω2, where ω is the oscillation
frequency
• From the kinetic theory of matter, this average kinetic energy must be on the order
of ½ KT. Therefore,
where A is a temperature-independent constant. This shows that the resistivity of a pure metal wire
increases linearly with the temperature. We term this conductivity lattice-scattering-limited
conductivity
Problem
Problem 2

What is the applied electric field that will impose a drift


velocity equal to 0.1 percent of the mean speed ‘u’ (∼106 m
s−1)of conduction electrons in copper? What is the
corresponding current density and current through a Cu wire
of diameter 1 mm? [μd is the drift mobility, which for copper is
43.4 cm2 V−1 s−1 and σ = 5.9 × 107 Ω−1 m−1 ]
Books & Weblinks
 TEXT BOOK
1. S. O. Kasap, Principles of Electronic Materials and Devices , 2018, 4th Edition, McGraw Hill
Education.

 BOOK REFERENCES
1. Simon Sze, Ming-Kwei Lee, “Semiconductor Devices, Physics and Technology”,2012, 3rd Edition,
Wiley International Student Version.
2. Ben G Streetman and Sanjay Kumar Banerjee, “Solid State Electronic Devices”, 2015, 7th Edition,
Pearson.
3. Adel S. Sedra, Kenneth C. Smith & Arun N. Chandorkar, “Microelectronic Circuits: Theory and
Applications”, 2014, 7th Edition, Oxford University Press, New York.
4. Donald A. Neamen, “Semiconductor Physics and Devices”, 2017, 4th Edition, McGraw Hill.

 WEBSITE LINKS
 https://nptel.ac.in/courses/108/108/108108112/
 https://nptel.ac.in/courses/113/106/113106065/

You might also like