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EDC Unit 1 Notes

ECE- Electronic devices and circuits. unit 1

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Abishekha Abi
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261 views37 pages

EDC Unit 1 Notes

ECE- Electronic devices and circuits. unit 1

Uploaded by

Abishekha Abi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
Fee ECRRSS ELECTRONIC DEVUES AND erreuits Vo, the potential b eomplotoly disappears, and hence holes ross the junction sfrom P type te N type And dloetrons de7vEss the function th opposite direction * asaitn ab the jundion +4 vs Reverse Bias sonditton :- when the negative (nates wm the P type and positive N type of the " type of the PN junetion deod2 ts Enown as revere bias conditeon * terminal 64 tHe battery is tormnal to eee o- a .— _t” oO r—r——S— Cs Under veverse bias aondition, holes from P sido Immove towasds the negative tovminal «4 the hatte and octoctsons frore N ido wm attsachad bowordg ee ositive terminal of the hatery . The width of Caries tneveases . Theooticatty mo current {tow ro ‘exfernal etreutt- ve chavactentdlees ¢_ bo practice a very gmall amount ef current tows under reverse bias te Ve Breakdown vottage . Te Gy increash the severe veltage, Ok particule | vou these ts certain ise tn Come. TRE ts }hnown 08 beatdown voltage . i Zener Probe ~ | Jener diode jis a spewaS type ej devie | designed opecate tw the Yoner breakdown Hagion, Pe oe Os novmal PN Junction diode tnder jfortward | [Biased tonditeon . TL b heavily doped than et ! jer Junction diode. Herve ‘Wb hos very thin daptetion Region. ot always severe biased. Anode, ; t cathode jYoxwaxd bias conditton :- when the xanor diode is forward based iu | : , [behaves 05 normal PA junction diode Ft attows Jeunent f flow as xeguias diode eis Reverso btas condition : bshon a soverse yottage is applied that exceeds ithe xonew vettage: The xoner diode breaksdown ard Jurent toss to weverse dirveckion . This yeverse { jbreakdoum knoun #s yoner breakdown oF rEner etext aw aaa a Breakdown techanton:- & Zener breakdown & Avalanche breakdown . Fenex Breakdown : . The process fn which electrons . move across the baie for (Valance band) P type material te the n Fyre matertal ( tonduction band) t& noun as fener Breakdown . doses *. occurs tn heavily dopad pn junction - ; exouse ef their roxrow depletion segion , nerease in temperature decreases the breakdown Noltagqe : a ae, jevninsie Breakdown +. | Tho process | Applying high vettage and increasing. [the froe olectrons ov Olecte eworent tn Aericonductoys land insulating matertalr is eatted avolanch breakdown, | ‘the increase th temperature increases the breakdown Voltage - WP char tutorcisticc :— Yorwad Bias condition The operation i same as Pr junction Under foward bios condition Reverse lias tondilion - Snipaily there was a small CwHENE+ At Certdin reverse Voltage rthe gener breakdown eccurs and lewrrens Yncreases [Link] #haxp change fo zener eurrent ib known 0s knee point . ———> Ve BIPOLAR TONCTION TRANRISTOR A bamistos consis py Bae bid rminals. 7p & a semiconductot device , that can amprit é “the three ferminals are 4 signals . Erittes x Base ; & Collectos. | Based pn the constuction, tk th ctawigted lato x npn feamtstos a php rans (shox Rosed on the configuration , ik & etassigied tht %* Common base tonfiqueatton tommen emitior congiguration + tommen coltectos conf tquoactton l | | | | £- Emitter - omit. the thoage toxctens 2 Bi - B- Base - path, b/w cottectos and emmitres |C- collector eotiect the charge “from omition ; ! | 7 | i . “®t Opaxation ef npn hamistor .; " [ {nf Te | n | jp \ Ly. Ver Vee a ee | Va f THE omites of MPN Framistor iy heavily doped . When forward bias és Applied te the emitter the “majerity Cannters ‘move towards the base. this couses jOmitter Curent Te ape gtocerons entor int p type Material ond tombine with holes. The base & vay Ughtty doped end a then Layer, 40 that Yow electrons ax Combined ond Yematoing consti tures the base current Te ITH base current enters Int the coltedor Tegion and thus tolleck the etechons at the eottectps. thus the Emitrer current ts the sum eb Cotlectsy & base cumrent. Oporatzon 4 prop tronststor = re fe [eT J ole vee Vee The emiter junction is tonnectad fo Yoxword Blas 40 that the Omitter pushes the holes tn base region . The hotes comstitute emitter current Te, uhen these holes move the pase they eombine wtth eloctrons. the base ‘of hranstvor & thin ond very Lightly doped +-Hence gow hotey combined With etochons and Temating moved rowands the collar fegton & bennectad th Teverse bias, the hetes which enrering the p type matertal & Collected by cotlectos end thos it Aevelop cotiectos j current Pe. |Tronsistoy Biastng :. | Applying external vottage be a tranitor '& catled tq, the biasing. depending upon external bios YFG |transistoy works th bthvee Tegtons. | & Active Tegion i x Cutoy regton i & Saturation region . [Dekive region: | E et | ere e8 Nee 1 be Hh’ mode, the omitter base Sunctlon of ‘hanstites jis fevwowd bias and cottectov base junction ts revere |biosed. The wansiter operated a3 9 amplifier . Aaluwotion tegen >- ye tr Wis mode, both the, emitter bare Junckton dnd tollectos base junction th forword: biased. the fransGtor & pporated Ps a eloted Awltch. . Cok eh vegion 3 - | ‘mpl vee oe nt In th mmede, the emitter bese Junio gnd colleder bose junction & wevrerte blared. the translifor is ‘eperatad Qs Open Xuryteh, : pl TE set cee 5 Oe ce | eporaiten any Bare | Region Tandon | See, \ Active Howard | Revese dias | Amplifier "be fas | | Cutopy | Reverse Bes | Peyense Bias | Open switch fauton| Forwaxd Bias | Yoward Bias | closed switch — eae a | ic ot configqueations : a Y Common Base comptguation :- ™ / UH & also cated grounded Base tonti cone E & TAL aed : a) aS | Emittor input torminal Cetiedos is output terminal Base is common terminal ond BH grounded . 3 a ushece Vee is the voltage given as input b(w emitter @ bare, Veo ts the bucput votroge given Welw botiecos B base is the emittes xosistancd | | Re Re is the cottector heststance. Te t the wllectvo current | Te is ene Mase Current f te ts the emitter current . ‘the 08 configuration & for ackive Kegion because fa & forword btoved ond C8 & tn aeverse bias. typ current =Te Up vottage » VBE olp currant © fc te vottage = Vee. eee en ‘ Cusrent amplification fackor/ ewurent gato Hob the satin ef thange tn, cottectos eurrent “the change {no emttey ewerent a: ASe , Te ATE Te Tip charactaxistees »— ! Fo find i[p thasactertstics , the olp veq Vea ts constant © AE cath t[p voltage Vac, Corresponding F_e es noted. ! AEF i | we bY i \ . Vous ov Ce | ' \ /) ——_» vee : *Th the ip vig & dors than borates potential, then due t depletion xogion » vou small Cussent ows Hrrough et. #D Une lp ‘veg B greater than bamtes potanRat, hen ‘the. deptetion region alsoppoors and thus tusrenk Trcreases iwith low voststance . (Olp charastertsttcs - *T© obtain ofp chavactertitics, Np ewwent Ye fe centant i { Tes3ma Tecoma Te stma 3 7 ‘Te 2OmA Ake of hegion. Vea x Active Aegion :— | Se ts independent of Vex te = Be i* Cuk ef} vegion :— | | DL Le=0, the Fe onty due ts severse Aatusation 7 “ eweronl, which neg figiby Arnott. i oa * Saturation vegion :- Je Increases exponentially as veo increases towards Det, Meat towards *H0- “Barats powarnaten? Ponty ebhouk » the vontatton oo modulation ©} ofjocive base usidth (by the Collectos vtq & Known as base width modulation pov carly 2fpect | gewrrent gain ineveases td) with increase ef Vea . 9 Minority covviers Increases in base. 6 Yos axtscamly large cottector voltage the ebfastive | base width may be veduced Foro, Desutting » tn ibaeakdown Wotkage of teaniistor. thts t known as \r EBT RE mts a Tuanststos Pawameten >- Doput fynpedence : - | ib > AVBE I Ave | Vea - constant lp adm trance . hob = AVew | Te =tonstant forward werent gain hPb~ Ame Ate | Vor = Constant Reverse Voltage gain hyp = Svee | Veo | Pp. constant - & |Common Fmitter contiguration ~ He & also known os grounded omen eu) eae } | 32>} WT af [ Base is tp tewminal i | Cottectow is olp bosminal | Emitter & common tovminal a te ts geounded - Veo % the Voltage givin as ip Fee. a Veo & oe B the Voltage Given ‘as ofp ca BF | Fe S base current ’ “Ze ts collector euarent - Te fs emitter current: the ce conjequeation w To active region, 40 Pe ts Jomosd btas and ce & th reverse bios, fp current = Bg : lp Voltage = Vee ofp cument = Le ae olp Voltage = Wee Coment amplttcation factes / current’ gqath i te is‘ the votto of change in Colfector, eurent t the change to base current. : p- ALe ee , Ste To. He chavactertstres s. Te relates jp cunent Ta V8 Yp tg Vac tor Constant olp vtg Ven . | vee. | yep et ant ' RWhen vee =o, the EB Junction is forword bias @xkwheo Vee ro, the Ip decseases for sme VRE, O}p charactertstics + Po determine ofp characteristics In & kept constant : ae | ae | oO Adve ee i das ter ! —- Torows LZ ca egrr ie x Active vigion > ’ aan Yor a given vatue Te increase with Vee Mmereases Te * Veet R duk-ohh vegtons” : Dy Pozo, the ole courant due b vevare sabwraton . cumrent + Po vO. % Botusalton region > DH To ts inereased there ts Amatl Change th 2 Framistor parameter :— oS Prpuk Mmpedance ». hie = Avpe | Te] Ver = tonstanl | Sree eeeEEEEERESeeeeeeees EEE EEEEEEEeeeeEeEe EEE EERE EEE Outpt ad mHrFance 2- hoe = - | Avee [Pe - comtant | Forwood eeurent gato hfe = ABe Ada | Yee = Constant pace Voltage gain +. , | hoe = AVee Avce | T¢ = constant- 3.) Common cottector con fiqueatton :- tte B also known as grounded eollectos configuaaton | Base 18. ip Ferminal Fiver is ofp terminal 1 Cotlectos ts ‘common terminal B { ve i a ge SY ante tho the Up vig bw Bae- the ofp vba bw Bac the base cuwrent the cotlectoy current the emittes Curent. eee FF ea The cF conféguration & Ookive regror 40 Be & forward bias and ‘Fc th vevence Bias, Jp cument = Te | HIP vottage 2 Ves i ofp cuvrent = pe 7 { olp vettage = vee i ee =~ LF i ‘turent ampli{ecatton qactor / current gash + it» the ' 9p ch | i cub te % the matto> of change ti Omer current change In base current araeteotshes +. le gelatos In ve Veg with tomstank Vee ove 3% vee ey | \ \ — “ee D the ie veg -Vow tncveases the Up eument Te Yrcrecses. Bh the Wp veg Ven decreases, the ip event 2 also decreases. | tp Chawanrerl Tea A ems ee . Jo determine ofp chowacteatsttes Dp Os kept constant Se & Acave Segion :- fox a given value De tnoreases With We Increases . Ter Veer ot{ Xogion:- Dh Tazo, the olp curént due be reveut satwration current Ie wo. # Sakwrakton vegionr- Dt Tes increased thre ts small change th Be. Txamistor parameters ) Snpat impedence , bic = AVac Ate NcE = comtant 3)Ourpul admittance :- Vie = OE \ AVce \ tLe = Constant Btonvaxd current gare -- Wee - Ade \ OTe | vee = comtant W Reverse voltage getr :- Wwe = Avec Gant \'se teyant | mosrer s The Metal Oxide femitonductos Petd.: Affect Teansti tor ks also known os Sosulated qate Fiotd Fffock Trenstor (aeen):; Metal - Srsutated semiconduckor elle fec Transtites CMUFED, because the gate ts thsutated yom the \chanvel - Te t& a & terminal device with | # Aource > Drawn * Gate >» Bubsteate - The substrate is thtesnally connected bo the s0uTe. De ts classiqted in two kypes. They axe & Frhancerment MosfET ( F-MosFeT) w Rophetion Mosr€T (D-MOSeET - Enhancement MesFET ( F-MosreT) :- This Lype of MOSFET operates only th enhancement mode. There ase two types of F-MosFET- [They ose xn channel E-MOSFET % P Channel F- MosFeT. wey eee eet ee) eee oe n channel F-MesFeT + | Sn this type, Ewe higrhty doped n Kogons are iditjused tdto a Lightly doped F type substrate , and dxatn and source terminals axe taken out fovrn |D Region. The slog Layer Gsolate the gate trom itme dogion blw source and dacn . Db © a —1, : Working »_ Kuhon Ves and Vos = OV, tthe- Absence, 64 channel , between draco and: source Wit results th Xeno curstent. x When Vas and Vos = positive: 3 AL posticular vettage the concentration 64 - electrons near the 4idg Layer increases and a measurable amount ef tument flows between dvatn and gowrce: Ths vatue ef Vac t& known 08 threshold veltoge (vy). At this threshold votlage Va, @ channel & developed io 1m pagion: » By increasing Vas» mere humber 64 ofectons pulled tht the channel, thereby increasing the Conductivity. Drain chasactertites :— Dp == vos Vas sbv Vasssv Vusenv Vass ov Vs = re eee : eee eee eee | Dt is the graph plotted bw vps and Ip. Isoe sixed value 64 Vos, Ak some poet ef Wps, the idvaéo cunent Tp seaches gatusation level and this |Potht of vps @& known as pinch eff Vottage (4p) iT vansfos characteristics :. T & a graph plotted Bw vas and Ip £o Mas P- channel MosFet :- Sabstrato 2 The working ef p channel EMosFET: aw oxoctly opposite bb n channel E-HosfeT. Phe voltage polarities and current directions ove severed + Deatm characteristics ¥_ To Vosty) Transper chamockertstics 1 tp ' Popletion MosreT :- The [Link] ts of two types Mey ave aN channel pb. MosFeT % P channel D- MosFET- N channel - D-NosfeT :- —ile— & PS Dd to thés type, Fwo heavily doped #7 segions awe ‘difpused oven a Jeghety doped P Hegion «the N sagion gepresents souste and drain, The 310) Layes Botate the qate from the region blow gousce % drain, | jboorking: : x when we frotide Vos Qnd Wos=o, the free eledzons ee 1n channel attracted bowasds positive voltage dwain Fexrmiinal . x When Vos & HVE and Vas & -W¥2, the negative [charges ore attracted by p type Aulostrate . tnd |eauses vedacion ef free olestrons and thereby |weducing dwatn eurent Dp. (Trans{er chogackoststics +_ To 7 ates ; Vas — pee ee vp ’ TL & a qraph plotted blw Vas and Tp * ee 'P- channel Moseet>- §o this kype five p two deg htly doped p segions ane difjused oven pb type Region. The pobestt polarities re} vottage and euent ase gevemd. : | \ ‘Ranslex chawacteststics > 4 { Vas YP @: key points | «WN chanec! frnbancemen| MosFeT Vos = ae Vans =0 > No current - Vos = +'¥%° \No Channel. * P channel Enhancement MosrET Vos. < —Y€ : j Vos =0 ; No current ae > Ne channel * N channel D- MosFeT- a. —We Vaso; Channel present Vos s give Current flows. : u : % P chance! b MosetT : * ig nee . s wus 2 pive- Vus:0 3 ¢hanneh present es ee current flours . JUST :- Uni Tundion Tramistoa is device consists of only ene pa j Hyree terminal Semi tondusto, unetlon diode. Te has Aimee terminals,» pvwes % Based & Base 2 combuctiton :- HIE consists of leghtly doped m ty bar with heavily doped P type mateortal * N lupe bos treated base and p type vegion ts eatted emitter. Hence PN Junction is foamed blw pe semicondusry emitter and base: Bose 2 er € eH?) y | Br Base 4 - Khe pisoction of arsow head represents the wtrection ef cuwent flow. : Equivalant Uveute of usT:- 8: By tho internal resistances ©4 By ORs iy pas and eps. Aince the omittes termine! ites dose to Ba, the /ntesnal resistance Ray te Greater than Ras..the drop acyss the vaT & denoted a3 Vo» When emitter terminal & not conducting , the lotal base resistance. Lng - Ray + Res. ee | [Pnbinse Atand of rato: | ee : : Pe i defined as the yatw of internal bare | weststance 4 and tntos base resistance. = Kas aa fen | where Rep - Poi + Rao. when Deze, the voltage drop acmss Rear & given by Voltage: divider vate» Veo = Vea. ee Rai+ Par | Versi Vee. eas ‘ | eee | Veol=[Link]. | Opasation s , ‘ ed b You epesating usr, a supply Vtg veo & applied ble | Bi3By and ve & applied across Emitter fearninal. cose > Ve VA- when ver Va, the PN junction ts forward bias and | slaxt conducking. the vatue of emitter Voltage which Mmokes déode to conduct & calted paak point voltage. ‘p= VA +Vb vp = Dap + Vp tne neacrany) The value 64 vp ‘vranges frm 63 & OTV- ChasadertHies of ut. Hleqaics Al pared vouage Cut off region i : Bn this region Ve Ws below the peak point and (Peso. war & th OFF position [Negative resistance region: This & the region blw oot pothe’ vate potnt , Ve decreases as Te increases. UTT Ott a5, an osctllator. LBatusation region » Thé & the region beyond valley potnt. ve & _ tonstant- with inevease th Be. vst t& th ON position. Application 64 UsT A Non Anusotdal osctltates KNroing ctreutts : x Aawtooth generators KPriggentng device for SCR ATRIFL , x Sultching Crewtts ab Vottage regulated sappices. : Bf EPRI se Injen Capacitance Cd or Atorage Capacitance 8 Under Yerward bias eonditton, the potential hander iat the junction & Lowered and diffusion takes ploce Mence electrons enter the P ride from n slde, hates enter (Hen side fom p mde combitule minority Canons . this process 8 eatiod minority charge injection , Hifluscon eapacdtance is the Capacitance that happens ‘due b& transport of ehorge eamierns bw bwo terminds jo} o device. BL & given Os 1 Cy = 48 —® | Nv | Excess minority charge on 7 aide i | G= F de Pato) oe de oO) i. : 1 Qe hePaw) Fatan ° Qe AoPatoy pes base he) Q= AePnw (© 00 -Yip te ao G@= AePnco) i” : he a. AePncoyjp —>@, didtecentiote wis b v. = Aobpd ) ao aa Wigjesion Aote ewneht ts given os LTPacx) — AeDp Paco) —x/ e’_@, | Assume P gs heavily doped . Donwoy- T . - | tole current vrossing In nalde wth *=0, } L prc) = ae oa. a re ne TELL ASIAN a Te Aedp Po) _, @ bp Fa = Top __.@ AeDp ‘ | dPaie) _ dt 50 “dv” Aevp av | Aub fo eq: i | | Ag dr | = Coz 4élp dv Scie “dv | Cp = +t de : fiities —. §- dE . ducde conductance a = }p2 | Pe | Mean £ife Kee dP eg. Cp= 1-9 Oicde neasistance Y= Hiode Conductance. “Ge Te ov (pet L_ DVT Thamition Caporitante 5- won a PN junckon is saverse biased, the dephobon dayer oy transition wegion atores eclectic tharge tm the form ef dlechte field and results In eapacitive ejock this, effoct is known as bamérlton Copacitann- Dt is detinad as the th th. per change th volkage « shang age Cr a —s®., Fotal Charge density wth Area, A. Q- eNaAWA ~.Q { 1 | 1 } | Where , @> charge cf electrons NA > concentraklon 3} Occeptos inoparttte ¢ i Ws deplekton wdth A> rea : | Biz er = sna A Ge) } | By passions equation | dv. eta da — SSdrve Sf edady2- ce Sfdeve ena SS dx Sfdev = ots Sf dda - Sy 2 ona fudx- ve Na xt _@ é [ee VeVB, wew Ve = eNa we _,@® z a To find dw. aif 2q:@ ay bv: f= eNa. aw ENA fw a fe ; dw, £ du eNAW Sub in 24:0 de. a Ae ay. T 2M! bya Ct= als whee @, permoitivity : Wo width of Acpletion segion A cross Seckonal area. Sea a | \ 95 (Rect tow » , {Pec} eloctronic i A mocifios & a doviee that eonverls an [alternating voltage to dtreck voltage pourient by wing one oy more PN junetion dfode . 1 \ Rectifier elreutts ean be classified as K Half wove vacti{iea Kull wave rectifier. Malt vtave veckiqien :. 3p Fat, wave rectifier, diode Conducts only | duving postive hat} cycle ef Ac Supply . busing negative hay cycle Of Ac ‘supply dicde wilt pot Condud. Combunteon » od | a eee 4 : 1004 Ls" + { | Holy wave eeatgie tonsists 04 atop down, Nansjormes, \Keritonductoy dtede and Load resistance RL. top down bransformes used te reduce Bc voltage by iveguived tevet. The ptode & wed to eonvert Ac te de. | Operation :- ae, the positive hay cycle of vp Atgnal » the jdtode ts forward btased , honce uring the ive : : : oe vie hat, eqele, the diode és Analysis s 7 Tp vettage e transfor ner Vi= Vm sinwt —5 O Htode toad current f& given by Re firainae , ob'n Maximuroe peak eurent Dm = Vr epeee aaa oad current % given by Aub ® th ® 2 Ym Re+Pr Sint —5@ | 1 2 De cument Er overage ofp Current s_ CaEN dest) Dm Ainwt dtwt) or % c a a ec & x 1K wR O > Pac =~ Im A — oso ao Pde = -m (-1-9) un Tde = fm (+2) i on nw Ta = Vm NB (Re +P) re Jae > \ Ee = t Be J (2224) doe °° = [Lee { we - sore . aT 2 ° Sak Ern2 ar A i _— 7 to ‘ 3) Wd :- Vde = LD ee Im oo oe [20-40 ) = Vm’. Re Per Re (Pp+ PL) % PRLCRL xy Vde = Mm BA D-| opr ya : lien) Qi. me, a 4) Peak dovense Vottage :— ‘ : a. AY BYyficlency tr P_Tte. yt H= De power output . Pde 6 Tye Re nab ee Pac » 4? Ac powee Pac rms Re | d= Dae. we i Tym + i | : a | Ged = (Yr/x xp, | = bn D = Ao-bY, 5) Ripple yactor :. D =. BPrnms ‘ms Value of, de ewment de Lomponent 9-= (Di ine = Tac How defined as the maximum yeverse voltage thot con be applied axrss the déode without damaging | ‘Yur wave wocti{ien :. uti wove voctifier & Classified into 2 typas * Centre tap full wave WeEifcor & Bridge by rectigies Contae tap ust wove rectifier » A clreutt ushich converts the ac Curent ‘inte pulsating voltage / current during both hate itydtes ef input & known as full wave redifier. Construction o : F B14 1 a i Vo ; ; | ee | ak IE soquires two dtodes for tohverting singte phase AC Supply bo full wave Dc- | YU tome ob two diodes pi nna. oe; tb the | canter point nd neutral point; |operation = c , ® during positive half tgele, % becomes positive and | becomes negative . this rnakes the aibde D1 Yooward biased and bg as veverse biased. Monce Bb) conducts | * during negative holy eycte ' x becomes | Negative ond Y becomes positive. THA makes the diode Di deverse based, ba bocomes yooward btared [Hence Dg conducts . : | | | i | Qukpat wavefoom :- vin Analysis t- Fp vottage of trarnformes Vie Vie sin wt > © Riode load cument fs given 0s G- Imsinvt, 6 bax _.@ Maximum poak torrent | Dr = Vo Re + Rives D BC cusent »- Pac = Tr Ainwt diwt) - oKA = Qn S mie Ain wt dtet) Oo Im = Te (_-cos vy™ = \o9 Brms :- - it tem Aint) dcwt) ° cm | | | [nee x : | ~ - ofl BS) Vdexr Oe voltage = Vide = ddc- Re Ay Pyficieney ne dc power output Side ac pouty ‘nput Pac. Pde = Dee Re Roce fan ep eee eee eee gs je 98 Y b) Peak grverse Vottage s. u & defined as the marimum reverse voltage that can be appited acwoss the dinde without damaging tt. Bridge rettdiors. * The bridge mectigios Chrelt Ga ful wave wectiftes wsing ous diodes . The ac vottage & appliad & one diagonal ©{ the bridge thovugh transermey L and recttied de vettage & token from ether / | | | + | Operation ce + Burtng the pasitive had cyclo, x becomes positive And Y becomes hegative- the diodes piaD4 will "are forward biased white Dg and by wevarse biased - two deodes py, # D3 conduct + t 429-9) F puving negative hat tyele, x becomes hegative and Y bocomes positive. the dliodes Ps and py ane dorward biased and by and bz reverse biased . Hen Paand Pa conducts {eg b) | | j Analysis i | [re as tentiy téped rectifier ] | Copy tee gener as doqulator + ‘ + Under wevowe bias condition, the current & vory Bmall th gener diede - x when the suffident vovese bios & appiid, aocnicat breakdown 4 yoney diode ocewr » Large Omount 64 ‘current flows though the diode . * Under this condition , the voltage atross the lyoney & constant and equal & vz. : Vo = Vz. | whore Vino unxeg ulated ilp Vottage \ Yo > KXaqulated > kag ole voltage | Rob the resutance used tm Limit the reverse j¢urrent Enough the zener diode | ° y ‘tase d) : ca with varying i/p voltage Vin - wee ye 4 oe Ls cE L 1% ushen Vin increases , | t]p current L also Yncreases. Phts Increases the |deney current Fy » Vettage drop across R will abo inereates - Thereby keeping toad Vottage Vo constant - 1b) when Vin decreases, | Hp current © also decreases . THE decreases the anes dAtode curent Ty, Vottage drop acrpss R uff also decreases Thereby keoping oad Vottage Vo constant case W) — Pequtation with varying Load resistance Re 2 14 Je RS | Ve ve | ® when Load ascirtance Ri Incocases, load current T decreatos , Wis Amon aade auowot Be imoawew, As O ‘Tesult, Dp currant T and vettage dro R vemain comtont. thereby keeping load vottage Vo tonstant. Bb) ashen load Assistance decreases , Aoad eunrent DP, jnoreaser, As a nesutt, Up cument LT ond vottage dap arooss R remain comtant. They keeping Load vo lkage. Vo constant. 4

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