NPN Silicon Epitaxial Transistors Specs
NPN Silicon Epitaxial Transistors Specs
2SC4081-A
2SC4081-B
20736 Marilla Street Chatsworth
Micro Commercial Components
2SC4081-C
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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information) NPN Silicon
•
•
Low Cob . Cob=2.0pF(Typ)
Complementary to 2SC1576A
Epitaxial Transistors
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings SOT-323
Symbol Rating Rating Unit
A
VCEO Collector-Emitter Voltage 50 V
D
VCBO Collector-Base Voltage 60 V
C
VEBO Emitter-Base Voltage 7 V
IC Collector Current 150 mA
PC Collector power dissipation 200 mW B C
TJ Junction Temperature 150 к
TSTG Storage Temperature -55 to +150 к B E
F E
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
G H J
ICBO Collector Cutoff Current --- --- 100 nAdc
(VCB=-60Vdc)
IEBO Emitter Cutoff Current --- --- 100 nAdc K
(VEB=-6.0Vdc)
DIMENSIONS
ON CHARACTERISTICS
INCHES MM
BVCBO Collector-base breakdown voltage 60 --- --- Vdc
DIM MIN MAX MIN MAX NOTE
(IC=-50µAdc ) A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
BVCEO Collector-emitter breakdown 50 --- --- Vdc C .079 .087 2.00 2.20
voltage (IC=-1µAdc) D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
BVEBO Emitter-base breakdown voltage 6 --- --- Vdc G .000 .004 .000 .100
(IE=-50µAdc) H .035 .039 .90 1.00
J .004 .010 .100 .250
hFE DC Current Gain 120 --- 560 --- K .012 .016 .30 .40
(IC=-1mAdc, VCE=-6.0Vdc)
Suggested Solder
VCE(sat) Collector Saturation Voltage* --- --- 0.4 Vdc Pad Layout
(IC=-50mAdc, IB=-5.0mAdc) 0.70
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4081
MCC TM
20 0.35mA
80 8 24µA
10 0.30mA
21µA
5 0.25mA
60 6 18µA
25°C
Ta=100°C
0.20mA
−55°C
2 15µA
0.15mA 12µA
40 4
1
0.10mA 9µA
0.5 6µA
20 2
0.05mA
0.2 3µA
0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( Ι ) characteristics ( ΙΙ )
500
0.2
DC CURRENT GAIN : hFE
VCE=5V 25°C
DC CURRENT GAIN : hFE
200 200
3V −55°C
1V IC/IB=50
100 0.1 20
100 10
0.05
50 50
0.02
20 20
10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=10 0.5
IC/IB=50 Ta=25°C
TRANSITION FREQUENCY : fT (MHz)
VCE=6V
500
0.2 Ta=100°C
0.2
25°C
Ta=100°C −55°C
0.1 25°C 0.1
−55°C 200
0.05 0.05
0.02 100
0.02
0.01 0.01
50
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)
Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Gain bandwidth product vs.
voltage vs. collector current ( Ι ) voltage vs. collector current (ΙΙ) emitter current
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4081
MCC TM
Ta=25°C f=32MHZ
200
EMITTER INPUT CAPACITANCE : Cib (pF)
f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100
5
50
2 20
Co
b
1 10
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Revision: A 2011/01/01
MCC TM
Ordering Information :
Device Packing
Part Number-TP Tape&Reel;3Kpcs/Reel
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