Scribd
Upload
219 views3 pages

2SC2565 SavantIC

This document specifies a silicon NPN power transistor from SavantIC Semiconductor. It is a complement to the 2SA1095 transistor and is housed in an MT-200 package. Key specifications include an absolute maximum collector-emitter voltage of 160V, collector current of 15A, and DC current gain ranging from 40-240 depending on operating conditions. It is intended for power amplifier applications.

Uploaded by

tanie.miejsca.parkingowe
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
219 views3 pages

2SC2565 SavantIC

This document specifies a silicon NPN power transistor from SavantIC Semiconductor. It is a complement to the 2SA1095 transistor and is housed in an MT-200 package. Key specifications include an absolute maximum collector-emitter voltage of 160V, collector current of 15A, and DC current gain ranging from 40-240 depending on operating conditions. It is intended for power amplifier applications.

Uploaded by

tanie.miejsca.parkingowe
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com 2SC2565

DESCRIPTION
·With MT-200 package
·Complement to type 2SA1095
·High transition frequency

APPLICATIONS
·For power amplifier applications

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings (Ta=25°C)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 15 A

IB Base current 1.5 A

PC Collectorl power dissipation TC=25 150 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2565

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 160 V

V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A 2.0 V

VBE Base-emitter on voltage IC=5A ; VCE=5V 2.0 V

ICBO Collector cut-off current VCB=160V; IE=0 50 µA

IEBO Emitter cut-off current VEB=5V; IC=0 50 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 240

hFE-2 DC current gain IC=5A ; VCE=5V 40

fT Transition frequency IC=1A ; VCE=10V 80 MHz

COB Output capacitance IE=0; VCB=10V;f=1MHz 200 pF

hFE-1 classifications

R O Y

55-110 80-160 120-240

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC2565

PACKAGE OUTLINE

Fig.2 Outline dimensions

You might also like